Liquid crystal display panel and fabricating method thereof
    2.
    发明申请
    Liquid crystal display panel and fabricating method thereof 有权
    液晶显示面板及其制造方法

    公开(公告)号:US20050077524A1

    公开(公告)日:2005-04-14

    申请号:US10963925

    申请日:2004-10-14

    摘要: A liquid crystal display (LCD) panel is fabricated with a reduced number of mask processes and includes a thin film transistor (TFT) array substrate and a color filter array substrate. The TFT array substrate includes gate and data lines insulatively crossing each other to define a pixel area, a TFT provided at the crossing of the gate and data lines, a passivation film protecting the TFT, a pixel electrode partially overlapped by the TFT, a gate pad connected to the gate line, and a data pad connected to the data line. The gate line, the gate and data pads, and the pixel electrode include a transparent conductive material. A gate metal material is on the transparent conductive material where the TFT partially overlaps the pixel electrode. The passivation film over the gate and data pads is removed to expose the transparent conductive material included within the gate and data pads.

    摘要翻译: 液晶显示器(LCD)面板以较少数量的掩模工艺制造,并且包括薄膜晶体管(TFT)阵列基板和滤色器阵列基板。 TFT阵列基板包括彼此绝缘交叉以限定像素区域的栅极和数据线,设置在栅极和数据线的交叉处的TFT,保护TFT的钝化膜,与TFT部分重叠的像素电极,栅极 焊盘连接到栅极线,以及连接到数据线的数据焊盘。 栅极线,栅极和数据焊盘以及像素电极包括透明导电材料。 栅极金属材料在透明导电材料上,其中TFT部分地与像素电极重叠。 去除栅极和数据焊盘上的钝化膜以暴露包括在栅极和数据焊盘内的透明导电材料。

    Method for fabricating array substrate of liquid crystal display device
    3.
    发明申请
    Method for fabricating array substrate of liquid crystal display device 有权
    制造液晶显示装置阵列基板的方法

    公开(公告)号:US20050101044A1

    公开(公告)日:2005-05-12

    申请号:US10875318

    申请日:2004-06-25

    摘要: An array substrate of a liquid crystal display (LCD) device and a method for fabricating the same is disclosed, to decrease the unit cost and time of fabrication by decreasing the usage count of mask, which includes simultaneously forming a gate line, a gate electrode and a pixel electrode on a substrate; depositing a gate insulating layer and an active layer on an entire surface of the substrate including the gate line; patterning the gate insulating layer and the active layer to remain on the gate line and the gate electrode; selectively removing the active layer above the gate line; forming a data line perpendicular to the gate line and source/drain electrodes; and depositing a passivation layer on the entire surface of the substrate including the data line.

    摘要翻译: 公开了一种液晶显示器(LCD)器件的阵列基板及其制造方法,通过减少包括同时形成栅极线的掩模的使用次数来减小制造的单位成本和时间,栅电极 和基板上的像素电极; 在包括栅极线的基板的整个表面上沉积栅极绝缘层和有源层; 图案化栅极绝缘层和有源层以保留在栅极线和栅电极上; 选择性地去除栅极线上方的有源层; 形成垂直于栅极线和源极/漏极的数据线; 以及在包括所述数据线的所述衬底的整个表面上沉积钝化层。

    Thin film transistor array substrate and fabricating method thereof, liquid crystal display using the same and fabricating method thereof, and method of inspecting liquid crystal display
    4.
    发明申请
    Thin film transistor array substrate and fabricating method thereof, liquid crystal display using the same and fabricating method thereof, and method of inspecting liquid crystal display 失效
    薄膜晶体管阵列基板及其制造方法,使用其的液晶显示器及其制造方法以及液晶显示器的检查方法

    公开(公告)号:US20050078233A1

    公开(公告)日:2005-04-14

    申请号:US10962452

    申请日:2004-10-13

    摘要: A TFT array substrate is fabricated in a reduced number of processes. The TFT array substrate includes gate and data pads with enlarged contact areas to facilitate contact with an inspecting pin of an inspection device. An LCD incorporating the TFT array substrate is inspected by contacting the inspecting pin to the gate and data pads. The TFT array substrate includes first, second, and third conductive pattern groups. The first conductive pattern group includes a gate electrode, a gate line, and a lower gate pad electrode. The second conductive pattern group includes source and drain electrodes, a data line, and a lower data pad electrode. The third conductive pattern group includes a pixel electrode, and upper gate and data pad electrodes. A semiconductor pattern is along and beneath the second conductive pattern group. Gate insulating and protective film patterns are at areas not occupied by the third conductive pattern group.

    摘要翻译: 以减少数量的工艺制造TFT阵列基板。 TFT阵列基板包括具有扩大的接触面积的栅极和数据焊盘,以便于与检查装置的检查销接触。 通过将检查引脚接触到栅极和数据焊盘来检查结合了TFT阵列基板的LCD。 TFT阵列基板包括第一,第二和第三导电图案组。 第一导电图案组包括栅电极,栅极线和下栅极焊盘电极。 第二导电图案组包括源极和漏极,数据线和下部数据焊盘电极。 第三导电图案组包括像素电极和上栅极和数据焊盘电极。 半导体图案沿着第二导电图案组的下方。 栅极绝缘和保护膜图案在未被第三导电图案组占据的区域。

    Thin film transistor device, liquid crystal display device using the same, and method of fabricating the same
    5.
    发明申请
    Thin film transistor device, liquid crystal display device using the same, and method of fabricating the same 有权
    薄膜晶体管器件,使用其的液晶显示器件及其制造方法

    公开(公告)号:US20050140890A1

    公开(公告)日:2005-06-30

    申请号:US10880121

    申请日:2004-06-30

    摘要: A liquid crystal display device includes a data line, a source electrode, a drain electrode, and a pixel electrode disposed on a lower substrate, an island-shaped semiconductor layer overlapping the source and drain electrodes, a gate insulating layer along an entire surface of the lower substrate including the semiconductor layer, a gate line and a gate electrode on the gate insulating layer, a passivation layer along an entire surface of the lower substrate including the gate line, an upper substrate facing the lower substrate, and a liquid crystal layer between the lower and upper substrates.

    摘要翻译: 液晶显示装置包括数据线,源电极,漏电极和设置在下基板上的像素电极,与源极和漏极重叠的岛状半导体层,沿着整个表面的栅绝缘层 包括半导体层的下基板,栅绝缘层上的栅极线和栅极电极,沿着包括栅极线的下基板的整个表面的钝化层,面向下基板的上基板和液晶层 在下基板和上基板之间。

    Thin film transistor array substrate and method of fabricating the same
    7.
    发明申请
    Thin film transistor array substrate and method of fabricating the same 有权
    薄膜晶体管阵列基板及其制造方法

    公开(公告)号:US20070170432A1

    公开(公告)日:2007-07-26

    申请号:US11716690

    申请日:2007-03-12

    IPC分类号: H01L29/76

    摘要: A thin film transistor array substrate includes a gate line formed on a substrate, a data line formed on the substrate intersecting with the gate line to define a pixel region, a thin film transistor formed at the intersection of the gate line and the data line, the thin film transistor including gate electrode formed on the substrate, a gate insulating layer formed on the gate electrode and the substrate, a semiconductor layer formed on the gate insulating layer,an ohmic contact layer on the semiconductor layer, and a source electrode and a drain electrode on the ohmic contact layer, and a transparent electrode material within the pixel region and connected to the drain electrode of the thin film transistor, wherein the gate insulating layer includes a gate insulating pattern underlying the data line and the transparent electrode material, and covering the gate line.

    摘要翻译: 薄膜晶体管阵列基板包括形成在基板上的栅极线,形成在与栅极线交叉以限定像素区域的基板上的数据线,形成在栅极线和数据线的交叉处的薄膜晶体管, 所述薄膜晶体管包括形成在所述基板上的栅极电极,形成在所述栅极电极和所述基板上的栅极绝缘层,形成在所述栅极绝缘层上的半导体层,所述半导体层上的欧姆接触层以及源电极和 漏极电极和像素区域内的透明电极材料,并连接到薄膜晶体管的漏电极,其中栅极绝缘层包括位于数据线下方的栅绝缘图案和透明电极材料,以及 覆盖门线。

    Method for forming pattern and method for fabricating LCD device using the same
    8.
    发明申请
    Method for forming pattern and method for fabricating LCD device using the same 有权
    用于形成图案的方法和使用其制造LCD装置的方法

    公开(公告)号:US20070148603A1

    公开(公告)日:2007-06-28

    申请号:US11640985

    申请日:2006-12-19

    申请人: Hye Lee Jae Oh

    发明人: Hye Lee Jae Oh

    IPC分类号: G03F7/26

    摘要: A method for forming a pattern and a method for fabricating an LCD device using the same is disclosed, wherein a photoresist layer is removed from a substrate without using a photoresist stripper, so that the pattern is formed with a low fabrication costs. The method comprising sequentially forming a pattern material layer, a transformed material layer and a photoresist layer on a substrate; patterning the photoresist layer by exposure and development using a mask; selectively etching the transformed material layer and the pattern material layer by using the patterned photoresist layer as a mask; and removing the transformed material layer and the patterned photoresist layer in a lift-off method by applying light.

    摘要翻译: 公开了一种用于形成图案的方法和使用该图案的LCD器件的制造方法,其中在不使用光致抗蚀剂剥离器的情况下从衬底去除光致抗蚀剂层,从而以低制造成本形成图案。 该方法包括在衬底上依次形成图案材料层,变形材料层和光致抗蚀剂层; 通过使用掩模的曝光和显影来图案化光致抗蚀剂层; 通过使用图案化的光致抗蚀剂层作为掩模来选择性地蚀刻变形材料层和图案材料层; 以及通过施加光而以剥离方法去除转化的材料层和图案化的光致抗蚀剂层。

    Electrolyte comprising eutectic mixture and electrochemical device using the same
    9.
    发明申请
    Electrolyte comprising eutectic mixture and electrochemical device using the same 有权
    包含共晶混合物和使用其的电化学装置的电解质

    公开(公告)号:US20070042266A1

    公开(公告)日:2007-02-22

    申请号:US11506216

    申请日:2006-08-18

    IPC分类号: H01M10/36 H01M10/40

    摘要: Disclosed is an electrolyte comprising a eutectic mixture formed of: (a) an amide group-containing compound; and (b) a lithum-free ionizable salt. An electrochemical device comprising the electrolyte is also disclosed. The electrolyte improves the quality of and electrochemical device due to the excellent conductivity of the metal cation contained in the eutectic mixture, a broad electrochemical window and low viscosity. Additionally, since the eutectic mixture has excellent thermal and chemical stability, it is possible to solve the problems of evaporation, exhaustion and ignition of electrolytes, to minimize side reactions between constitutional elements of the device and the electrolyte, and to improve the safety of the electrochemical device.

    摘要翻译: 公开了一种电解质,其包含由以下物质形成的共晶混合物:(a)含酰胺基的化合物; 和(b)不含锂的可电离盐。 还公开了包含电解质的电化学装置。 由于共晶混合物中所含的金属阳离子的优异导电性,宽的电化学窗口和低粘度,电解质改善了电化学装置的质量。 此外,由于共晶混合物具有优异的热稳定性和化学稳定性,因此可以解决电解质的蒸发,耗尽和点燃的问题,以使装置的结构元件和电解质之间的副反应最小化,并提高电解质的安全性 电化学装置。

    Thin film transistor device for liquid crystal display, and manufacturing method thereof
    10.
    发明申请
    Thin film transistor device for liquid crystal display, and manufacturing method thereof 审中-公开
    用于液晶显示器的薄膜晶体管器件及其制造方法

    公开(公告)号:US20070001242A1

    公开(公告)日:2007-01-04

    申请号:US11452357

    申请日:2006-06-14

    申请人: Jong Kim Jae Oh Soo Kim

    发明人: Jong Kim Jae Oh Soo Kim

    IPC分类号: H01L29/94

    摘要: A thin film transistor device for a liquid crystal display, as embodied, includes a gate electrode on a transparent insulating substrate; a gate insulating film formed of a first glass composition covering the gate electrode; a semiconductor layer on the gate insulating film; and a source electrode and a drain electrode on the semiconductor layer.

    摘要翻译: 如实施例一样,用于液晶显示器的薄膜晶体管器件包括在透明绝缘基板上的栅电极; 由覆盖所述栅电极的第一玻璃组合物形成的栅极绝缘膜; 栅极绝缘膜上的半导体层; 以及半导体层上的源电极和漏电极。