利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

12 条记录 (耗时 0.024 秒)

    VERTICAL MEMORY DEVICES
    1.
    发明申请
    VERTICAL MEMORY DEVICES 审中-公开
    垂直存储器件

    公开(公告)号：US20170062473A1

    公开(公告)日：2017-03-02

    申请号：US15349625

    申请日：2016-11-11

    申请人： Byung-Jin LEE ,  Jee-Yong Kim ,  Dae-Seok Byeon

    发明人： Byung-Jin LEE ,  Jee-Yong Kim ,  Dae-Seok Byeon

    IPC分类号： H01L27/115

    CPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

    摘要： A vertical memory device includes a substrate, gate lines, channels, contacts and contact spacers. The gate lines are stacked on top of each other on the substrate. The gate lines are spaced apart from each other in a vertical direction with respect to a top surface of the substrate. The gate lines include step portions that extend in a parallel direction with respect to the top surface of the substrate. The channels extend through the gate lines in the vertical direction. The contacts are on the step portions of the gate lines. The contact spacers are selectively formed along sidewalls of a portion of the contacts.

    摘要翻译： 垂直存储器件包括衬底，栅极线，沟道，触点和接触间隔物。 栅极线在衬底上堆叠在彼此的顶部。 栅极线相对于衬底的顶表面在垂直方向上彼此间隔开。 栅极线包括相对于衬底的顶表面在平行方向上延伸的台阶部分。 通道沿垂直方向延伸穿过栅极线。 触点位于栅极线的台阶上。 接触垫片选择性地沿接触部分的侧壁形成。

    Vertical memory devices
    2.
    发明授权
    Vertical memory devices 有权
    垂直存储器件

    公开(公告)号：US09524983B2

    公开(公告)日：2016-12-20

    申请号：US14988178

    申请日：2016-01-05

    申请人： Byung-Jin Lee ,  Jee-Yong Kim ,  Dae-Seok Byeon

    发明人： Byung-Jin Lee ,  Jee-Yong Kim ,  Dae-Seok Byeon

    IPC分类号： H01L27/115

    CPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

    摘要： A vertical memory device includes a substrate, gate lines, channels, contacts and contact spacers. The gate lines are stacked on top of each other on the substrate. The gate lines are spaced apart from each other in a vertical direction with respect to a top surface of the substrate. The gate lines include step portions that extend in a parallel direction with respect to the top surface of the substrate. The channels extend through the gate lines in the vertical direction. The contacts are on the step portions of the gate lines. The contact spacers are selectively formed along sidewalls of a portion of the contacts.

    摘要翻译： 垂直存储器件包括衬底，栅极线，沟道，触点和接触间隔物。 栅极线在衬底上堆叠在彼此的顶部。 栅极线相对于衬底的顶表面在垂直方向上彼此间隔开。 栅极线包括相对于衬底的顶表面在平行方向上延伸的台阶部分。 通道沿垂直方向延伸穿过栅极线。 触点位于栅极线的台阶上。 接触垫片选择性地沿接触部分的侧壁形成。

    VERTICAL MEMORY DEVICES
    3.
    发明申请
    VERTICAL MEMORY DEVICES 有权
    垂直存储器件

    公开(公告)号：US20160268301A1

    公开(公告)日：2016-09-15

    申请号：US14988178

    申请日：2016-01-05

    申请人： Byung-Jin Lee ,  Jee-Yong Kim ,  Dae-Seok Byeon

    发明人： Byung-Jin Lee ,  Jee-Yong Kim ,  Dae-Seok Byeon

    IPC分类号： H01L27/115

    CPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575

    摘要： A vertical memory device includes a substrate, gate lines, channels, contacts and contact spacers. The gate lines are stacked on top of each other on the substrate. The gate lines are spaced apart from each other in a vertical direction with respect to a top surface of the substrate. The gate lines include step portions that extend in a parallel direction with respect to the top surface of the substrate. The channels extend through the gate lines in the vertical direction. The contacts are on the step portions of the gate lines. The contact spacers are selectively formed along sidewalls of a portion of the contacts.

    摘要翻译： 垂直存储器件包括衬底，栅极线，沟道，触点和接触间隔物。 栅极线在衬底上堆叠在彼此的顶部。 栅极线相对于衬底的顶表面在垂直方向上彼此间隔开。 栅极线包括相对于衬底的顶表面在平行方向上延伸的台阶部分。 通道沿垂直方向延伸穿过栅极线。 触点位于栅极线的台阶上。 接触垫片选择性地沿接触部分的侧壁形成。

    SEMICONDUCTOR DEVICES INCLUDING GATE INSULATION LAYERS ON CHANNEL MATERIALS AND METHODS OF FORMING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING GATE INSULATION LAYERS ON CHANNEL MATERIALS AND METHODS OF FORMING THE SAME 有权
    在通道材料上包括门绝缘层的半导体器件及其形成方法

    公开(公告)号：US20160268302A1

    公开(公告)日：2016-09-15

    申请号：US14995845

    申请日：2016-01-14

    申请人： Jung-Hwan Lee ,  Jee-Yong Kim ,  Dae-Seok Byeon

    发明人： Jung-Hwan Lee ,  Jee-Yong Kim ,  Dae-Seok Byeon

    IPC分类号： H01L27/115

    CPC分类号： H01L27/11582 ,  H01L21/28282 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/42352 ,  H01L29/66833

    摘要： Semiconductor devices are provided. A semiconductor device includes a stack of alternating insulation layers and gate electrodes. The semiconductor device includes a channel material in a channel recess in the stack. The semiconductor device includes a charge storage structure on the channel material, in the channel recess. Moreover, the semiconductor device includes a gate insulation layer on the channel material. The gate insulation layer undercuts a portion of the channel material. Related methods of forming semiconductor devices are also provided.

    摘要翻译： 提供半导体器件。 半导体器件包括交替绝缘层和栅电极的叠层。 半导体器件包括在堆叠中的通道凹槽中的沟道材料。 半导体器件在通道凹槽中包括在沟道材料上的电荷存储结构。 此外，半导体器件在沟道材料上包括栅极绝缘层。 栅极绝缘层将沟道材料的一部分切下。 还提供了形成半导体器件的相关方法。

    VERTICAL MEMORY DEVICES
    7.
    发明申请
    VERTICAL MEMORY DEVICES 有权
    垂直存储器件

    公开(公告)号：US20160268264A1

    公开(公告)日：2016-09-15

    申请号：US15001877

    申请日：2016-01-20

    申请人： Sung-Min Hwang ,  Jee-Yong Kim ,  Dae-Seok Byeon

    发明人： Sung-Min Hwang ,  Jee-Yong Kim ,  Dae-Seok Byeon

    IPC分类号： H01L27/115 ,  H01L23/535

    CPC分类号： H01L27/115 ,  H01L27/11563 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582

    摘要： A vertical memory device includes a plurality of gate electrodes at a plurality of levels, respectively, spaced apart from each other in a vertical direction substantially perpendicular to a top surface of a substrate, a channel extending in the vertical direction on the substrate and penetrating through the gate electrodes, and a plurality of contact plugs extending in the vertical direction and contacting the gate electrodes, respectively. At least one second contact plug is formed on a first gate electrode among the plurality of gate electrodes, and extends in the vertical direction.

    摘要翻译： 垂直存储器件包括分别在基本上垂直于衬底的顶表面的垂直方向上彼此间隔开的多个电平的多个栅极电极，在衬底上沿垂直方向延伸并穿透 栅极电极和沿垂直方向延伸并与栅电极接触的多个接触插塞。 至少一个第二接触插塞形成在多个栅电极之间的第一栅电极上，并且在垂直方向上延伸。

    Semiconductor devices including gate insulation layers on channel materials
    8.
    发明授权
    Semiconductor devices including gate insulation layers on channel materials 有权
    半导体器件包括通道材料上的栅极绝缘层

    公开(公告)号：US09553105B2

    公开(公告)日：2017-01-24

    申请号：US14995845

    申请日：2016-01-14

    申请人： Jung-Hwan Lee ,  Jee-Yong Kim ,  Dae-Seok Byeon

    发明人： Jung-Hwan Lee ,  Jee-Yong Kim ,  Dae-Seok Byeon

    IPC分类号： H01L27/11 ,  H01L27/115

    CPC分类号： H01L27/11582 ,  H01L21/28282 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/42352 ,  H01L29/66833

    摘要： Semiconductor devices are provided. A semiconductor device includes a stack of alternating insulation layers and gate electrodes. The semiconductor device includes a channel material in a channel recess in the stack. The semiconductor device includes a charge storage structure on the channel material, in the channel recess. Moreover, the semiconductor device includes a gate insulation layer on the channel material. The gate insulation layer undercuts a portion of the channel material. Related methods of forming semiconductor devices are also provided.

    摘要翻译： 提供半导体器件。 半导体器件包括交替绝缘层和栅电极的堆叠。 半导体器件包括在堆叠中的通道凹槽中的沟道材料。 半导体器件在通道凹槽中包括在沟道材料上的电荷存储结构。 此外，半导体器件在沟道材料上包括栅极绝缘层。 栅极绝缘层将沟道材料的一部分切下。 还提供了形成半导体器件的相关方法。

    Knockdown chair for children
    9.
    发明授权
    Knockdown chair for children 失效
    儿童敲门椅

    公开(公告)号：US5429417A

    公开(公告)日：1995-07-04

    申请号：US145395

    申请日：1993-10-29

    申请人： Jee-Yong Kim

    发明人： Jee-Yong Kim

    IPC分类号： A47B47/00 ,  A47C4/02 ,  A47D1/00 ,  A47C5/10

    CPC分类号： A47D1/006 ,  A47B47/005 ,  A47C4/02 ,  A47C4/03 ,  F16B2012/443 ,  F16B2012/446 ,  Y10T403/34 ,  Y10T403/3906 ,  Y10T403/3966 ,  Y10T403/455 ,  Y10T403/52

    摘要： A knockdown chair for children easily assembled and disassembled, and maintaining a desired connection strength for a long time. The knockdown chair comprises a square seat plate having an insert projection on its side surface, a plurality of support beams engaging with and surrounding the seat plate by reception of individual insert projections of the seat plate and each having a reception slit at its side surface and a pair of reception holes on its opposed ends, a plurality of connection members connecting the support beams to each other at corners of the seat plate and each having three inserts in order to be coupled not only to corresponding neighbor support beams but also to a leg member, and the leg member coupled to the connection member for supporting the seat plate and the support beams. The reception slit and the reception holes of the parts of the chair are preferably provided with elastic soft layers made of a soft synthetic resin material for facilitating assembly and disassembly of the chair.

    摘要翻译： 用于儿童的小型椅子易于组装和拆卸，并长时间保持所需的连接强度。 该击倒椅包括一个方形座板，其侧面具有插入突起，多个支撑梁通过接收座板的各个插入突起并且在其侧表面上具有接收狭缝而与座板接合并围绕座板; 在其相对端部上的一对接收孔，多个连接构件，其将支撑梁彼此连接在座板的角部，并且每个具有三个插入件，以便不仅与相应的相邻支撑梁而且还与腿部 并且所述腿构件联接到所述连接构件，用于支撑所述座板和所述支撑梁。 椅子的接收缝和接收孔优选地设置有由柔软的合成树脂材料制成的弹性软层，以便于椅子的组装和拆卸。