公开(公告)号：US11849238B2

公开(公告)日：2023-12-19

申请号：US17591496

申请日：2022-02-02

Applicant: CANON KABUSHIKI KAISHA

Inventor： Kei Ochiai ,  Yoshiaki Takada ,  Masaki Sato ,  Masahiro Kobayashi ,  Daisuke Kobayashi ,  Tetsuya Itano ,  Nao Nakatsuji ,  Yasuhiro Oguro

IPC: H04N25/772 ,  H04N25/50 ,  H04N25/75 ,  H04N25/79 ,  H01L27/146

CPC classification number: H04N25/772 ,  H04N25/50 ,  H04N25/75 ,  H04N25/79 ,  H01L27/14634

Abstract: A photoelectric conversion apparatus includes a first substrate including a pixel array including a plurality of pixels, a second substrate layered on the first substrate and including an AD conversion portion including a plurality of AD conversion circuits configured to convert a signal output from the first substrate into a digital signal, wherein the second substrate further includes a plurality of signal processing units including a first signal processing unit and a second signal processing unit both configured to perform machine learning processing, wherein each of a plurality of sets includes a plurality of AD conversion circuits that differ between the plurality of sets, wherein the first signal processing unit is arranged to correspond to one of the plurality of sets, and wherein the second signal processing unit is arranged to correspond to another one of the plurality of sets.

公开(公告)号：US20220285410A1

公开(公告)日：2022-09-08

申请号：US17751406

申请日：2022-05-23

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yoshiaki Takada ,  Hajime Ikeda ,  Keisuke Ota ,  Yoichiro Handa

IPC: H01L27/146

Abstract: A photoelectric conversion member included in a photodiode PD2 is disposed at the position overlapping with a section B1, a photoelectric conversion member included in a photodiode PD1 is disposed at the position overlapping with a section B2, and a photoelectric conversion member included in the photodiode PD1 is disposed at the position overlapping with a section B3. A plurality of electrodes 25 each forming a Metal-Insulator-Semiconductor (MIS) structure together with a semiconductor layer 10 is disposed on a front surface FS of the semiconductor layer 10. At least one of the plurality of electrodes 25 overlaps with at least one of eight sections B2 to B9.

公开(公告)号：US11006036B2

公开(公告)日：2021-05-11

申请号：US16509986

申请日：2019-07-12

Applicant: CANON KABUSHIKI KAISHA

Inventor： Koichi Fukuda ,  Junichi Saito ,  Yumi Takao ,  Yoshiaki Takada ,  Masaaki Iwane ,  Shoji Kono

IPC: H01L27/146 ,  H04N5/232 ,  H04N5/369

Abstract: An image sensor comprising a pixel portion that is constituted by a plurality of pixels, and includes a first pixel group and a second pixel group, wherein each of the pixels included in the first pixel group and the second pixel group includes: a plurality of photoelectric conversion portions; and a plurality of transfer gates that respectively correspond to the photoelectric conversion portions, and have transfer gate electrodes covering same partial regions in the photoelectric conversion portions, and an average position of barycenters of respective light receivable regions of the photoelectric conversion portions included in each pixel of the first pixel group and an average position of barycenters of respective light receivable regions of the photoelectric conversion portions included in each pixel of the second pixel group are at positions different from each other in the pixels.

公开(公告)号：US20200244912A1

公开(公告)日：2020-07-30

申请号：US16851854

申请日：2020-04-17

Applicant: CANON KABUSHIKI KAISHA

Inventor： Katsuhito Sakurai ,  Yoshiaki Takada ,  Takahiro Shirai ,  Hideo Kobayashi ,  Kohichi Nakamura ,  Daisuke Yoshida ,  Fumihiro Inui

IPC: H04N5/369 ,  H04N5/378 ,  H01L27/146 ,  H04N5/374 ,  H04N5/347 ,  H04N5/3745

Abstract: A semiconductor apparatus includes a stack of first and second chips each having a plurality of pixel circuits arranged in a matrix form. The pixel circuit of the a-th row and the e1-th column is connected to the electric circuit of the p-th row and the v-th column. The pixel circuit of the a-th row and the f1-th column is connected to the electric circuit of the q-th row and the v-th column. The pixel circuit of the a-th row and the g1-th column is connected to the electric circuit of the r-th row and the v-th column. The pixel circuit of the a-th row and the h1-th column is connected to the electric circuit of the s-th row and the v-th column.

公开(公告)号：US10674106B2

公开(公告)日：2020-06-02

申请号：US16142651

申请日：2018-09-26

Applicant: CANON KABUSHIKI KAISHA

Inventor： Katsuhito Sakurai ,  Yoshiaki Takada ,  Takahiro Shirai ,  Hideo Kobayashi ,  Kohichi Nakamura ,  Daisuke Yoshida ,  Fumihiro Inui

IPC: H04N5/369 ,  H04N5/3745 ,  H01L27/146 ,  H01L27/16 ,  H04N5/378 ,  H04N5/374 ,  H04N5/347

Abstract: A semiconductor apparatus includes a stack of first and second chips each having a plurality of pixel circuits arranged in a matrix form. The pixel circuit of the a-th row and the e1-th column is connected to the electric circuit of the p-th row and the v-th column. The pixel circuit of the a-th row and the f1-th column is connected to the electric circuit of the q-th row and the v-th column. The pixel circuit of the a-th row and the g1-th column is connected to the electric circuit of the r-th row and the v-th column. The pixel circuit of the a-th row and the h1-th column is connected to the electric circuit of the s-th row and the v-th column.

公开(公告)号：US20190335093A1

公开(公告)日：2019-10-31

申请号：US16509986

申请日：2019-07-12

Applicant: CANON KABUSHIKI KAISHA

Inventor： Koichi Fukuda ,  Junichi Saito ,  Yumi Takao ,  Yoshiaki Takada ,  Masaaki Iwane ,  Shoji Kono

IPC: H04N5/232 ,  H01L27/146

Abstract: An image sensor comprising a pixel portion that is constituted by a plurality of pixels, and includes a first pixel group and a second pixel group, wherein each of the pixels included in the first pixel group and the second pixel group includes: a plurality of photoelectric conversion portions; and a plurality of transfer gates that respectively correspond to the photoelectric conversion portions, and have transfer gate electrodes covering same partial regions in the photoelectric conversion portions, and an average position of barycenters of respective light receivable regions of the photoelectric conversion portions included in each pixel of the first pixel group and an average position of barycenters of respective light receivable regions of the photoelectric conversion portions included in each pixel of the second pixel group are at positions different from each other in the pixels.

公开(公告)号：US10404905B2

公开(公告)日：2019-09-03

申请号：US15478426

申请日：2017-04-04

Applicant: CANON KABUSHIKI KAISHA

Inventor： Koichi Fukuda ,  Junichi Saito ,  Yumi Takao ,  Yoshiaki Takada ,  Masaaki Iwane ,  Shoji Kono

IPC: H04N5/232 ,  H01L27/146 ,  H04N5/369

Abstract: An image sensor comprising a pixel portion that is constituted by a plurality of pixels, and includes a first pixel group and a second pixel group, wherein each of the pixels included in the first pixel group and the second pixel group includes: a plurality of photoelectric conversion portions; and a plurality of transfer gates that respectively correspond to the photoelectric conversion portions, and have transfer gate electrodes covering same partial regions in the photoelectric conversion portions, and an average position of barycenters of respective light receivable regions of the photoelectric conversion portions included in each pixel of the first pixel group and an average position of barycenters of respective light receivable regions of the photoelectric conversion portions included in each pixel of the second pixel group are at positions different from each other in the pixels.

公开(公告)号：US10298867B2

公开(公告)日：2019-05-21

申请号：US15991788

申请日：2018-05-29

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yoshiaki Takada ,  Masaaki Iwane ,  Shoji Kono ,  Koichi Fukuda ,  Junichi Saito ,  Yumi Takao

IPC: H04N5/369 ,  G02B7/34 ,  H01L27/146 ,  H04N5/378 ,  H04N5/3745 ,  H04N9/04

Abstract: The imaging device includes a first pixel group and a second pixel group that include a plurality of pixels each having a plurality of photoelectric conversion portions that are separated by an isolation portion and arranged in a first direction and a plurality of transfer gates that transfer charges of the plurality of photoelectric conversion portions. A position of at least a part of the isolation portion within each of the pixels of the first pixel group and a position of at least a part of the isolation portion within each of the pixels of the second pixel group are shifted relative to each other in the first direction. Respective widths of portions where the plurality of separated photoelectric conversion portions overlap with the plurality of transfer gates in a planar view are the same.

公开(公告)号：US20170310913A1

公开(公告)日：2017-10-26

申请号：US15487721

申请日：2017-04-14

Applicant: CANON KABUSHIKI KAISHA

Inventor： Yoshiaki Takada ,  Masaaki Iwane ,  Shoji Kono ,  Koichi Fukuda ,  Junichi Saito ,  Yumi Takao

IPC: H04N5/369 ,  H01L27/146 ,  H04N5/378 ,  G02B7/34

CPC classification number: H04N5/3696 ,  G02B7/34 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/045 ,  H04N2209/045

Abstract: The imaging device includes a first pixel group and a second pixel group that include a plurality of pixels each having a plurality of photoelectric conversion portions that are separated by an isolation portion and arranged in a first direction and a plurality of transfer gates that transfer charges of the plurality of photoelectric conversion portions. A position of at least a part of the isolation portion within each of the pixels of the first pixel group and a position of at least a part of the isolation portion within each of the pixels of the second pixel group are shifted relative to each other in the first direction. Respective widths of portions where the plurality of separated photoelectric conversion portions overlap with the plurality of transfer gates in a planar view are the same.

公开(公告)号：US20170295331A1

公开(公告)日：2017-10-12

申请号：US15478426

申请日：2017-04-04

Applicant: CANON KABUSHIKI KAISHA

Inventor： Koichi Fukuda ,  Junichi Saito ,  Yumi Takao ,  Yoshiaki Takada ,  Masaaki Iwane ,  Shoji Kono

IPC: H04N5/369 ,  H01L27/146 ,  H04N5/232 ,  H04N5/3745

CPC classification number: H04N5/23212 ,  H01L27/14605 ,  H01L27/14627 ,  H01L27/14638 ,  H04N5/36961

Abstract: An image sensor comprising a pixel portion that is constituted by a plurality of pixels, and includes a first pixel group and a second pixel group, wherein each of the pixels included in the first pixel group and the second pixel group includes: a plurality of photoelectric conversion portions; and a plurality of transfer gates that respectively correspond to the photoelectric conversion portions, and have transfer gate electrodes covering same partial regions in the photoelectric conversion portions, and an average position of barycenters of respective light receivable regions of the photoelectric conversion portions included in each pixel of the first pixel group and an average position of barycenters of respective light receivable regions of the photoelectric conversion portions included in each pixel of the second pixel group are at positions different from each other in the pixels.