-
公开(公告)号：US09529257B2
公开(公告)日：2016-12-27
申请号：US14420957
申请日：2013-09-02
发明人： Chul-Ho Lee , You-Jung Park , Yong-Woon Yoon , Sung-Jae Lee , Youn-Jin Cho , Young-Min Kim , Chung-Heon Lee
CPC分类号： G03F7/004 , G03F7/0035 , G03F7/094
摘要： Disclosed are a polymer represented by the Chemical Formula 1, a monomer represented by the Chemical Formula 2, and a solvent, wherein the monomer is included in the same or a higher amount than the polymer, and a method of forming patterns using the same.
摘要翻译： 公开了由化学式1表示的聚合物，由化学式2表示的单体和溶剂，其中所述单体包含在与聚合物相同或更高的量中，以及使用其形成图案的方法。
-
2.发明申请MONOMER, HARDMASK COMPOSITION INCLUDING MONOMER, AND METHOD FOR FORMING PATTERN BY USING HARDMASK COMPOSITION 有权单体，包括单体的HARDMASK组合物和使用HARDMASK组合物形成图案的方法公开(公告)号：US20150274622A1
公开(公告)日：2015-10-01
申请号：US14441241
申请日：2013-06-04
发明人： Yun-Jun Kim , Hyo-Young Kwon , Hea-Jung Kim , Chung-Heon Lee , Youn-Jin Cho , Yoo-Jeong Choi
IPC分类号： C07C39/14 , C07C33/26 , C07C39/12 , G03F7/40 , C09D173/00
CPC分类号： C07C39/14 , C07C33/26 , C07C39/12 , C07C43/23 , C07C2603/50 , C07C2603/52 , C07C2603/54 , C09D173/00 , G03F7/0752 , G03F7/09 , G03F7/094 , G03F7/11 , G03F7/40 , H01L21/02118 , H01L21/02282 , H01L21/0274 , H01L21/31144
摘要： Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition. In the above Chemical Formula 1,A1 to A3, X1 to X3, L1, L2, n and m are the same as described in the detailed description.
摘要翻译： 公开了由以下化学式1表示的用于硬掩模组合物的单体，包含单体的硬掩模组合物，以及使用硬掩模组合物形成图案的方法。 在上述化学式1中，A1至A3，X1至X3，L1，L2，n和m与详细描述中相同。
-
公开(公告)号：US09725389B2
公开(公告)日：2017-08-08
申请号：US14364829
申请日：2012-11-29
发明人： Yun-Jun Kim , Hwan-Sung Cheon , Youn-Jin Cho , Yong-Woon Yoon , Chung-Heon Lee , Hyo-Young Kwon , Yoo-Jeong Choi
IPC分类号： C07C39/21 , C07C39/205 , C07C33/26 , G03F7/039 , G03F7/11 , H01L21/027 , C07C39/225 , G03F1/00 , G03F7/09 , G03F7/20 , H01L21/02 , H01L21/033 , H01L21/311
CPC分类号： C07C39/21 , C07C39/225 , C08G65/38 , G03F1/00 , G03F7/094 , G03F7/20 , H01L21/02118 , H01L21/02282 , H01L21/0332 , H01L21/31144
摘要： Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same. In Chemical Formula 1, A, A′, L and n are the same as in the detailed description.
-
4.发明授权Monomer, hardmask composition including monomer, and method for forming pattern by using hardmask composition 有权单体，包括单体的硬掩模组合物，以及通过使用硬掩模组合物形成图案的方法公开(公告)号：US09556094B2
公开(公告)日：2017-01-31
申请号：US14441241
申请日：2013-06-04
发明人： Yun-Jun Kim , Hyo-Young Kwon , Hea-Jung Kim , Chung-Heon Lee , Youn-Jin Cho , Yoo-Jeong Choi
IPC分类号： G03F7/11 , C07C39/14 , G03F7/40 , C09D173/00 , C07C39/12 , C07C33/26 , C07C43/23 , G03F7/09 , H01L21/027 , H01L21/311 , H01L21/02
CPC分类号： C07C39/14 , C07C33/26 , C07C39/12 , C07C43/23 , C07C2603/50 , C07C2603/52 , C07C2603/54 , C09D173/00 , G03F7/0752 , G03F7/09 , G03F7/094 , G03F7/11 , G03F7/40 , H01L21/02118 , H01L21/02282 , H01L21/0274 , H01L21/31144
摘要： Disclosed are a monomer represented by the following Chemical Formula 1 for a hardmask composition, a hardmask composition including the monomer, and a method of forming patterns using the hardmask composition. In the above Chemical Formula 1,A1 to A3, X1 to X3, L1, L2, n and m are the same as described in the detailed description.
摘要翻译： A1至A3，X1至X3，L1，L2，n和m与详细描述中描述的相同。
-
5.发明申请MONOMER FOR A HARDMASK COMPOSITION, HARDMASK COMPOSITION COMPRISING THE MONOMER, AND METHOD FOR FORMING A PATTERN USING THE HARDMASK COMPOSITION 有权用于HARDMASK组合物的单体，包含单体的HARDMASK组合物和使用HARDMASK组合物形成图案的方法公开(公告)号：US20140342273A1
公开(公告)日：2014-11-20
申请号：US14364829
申请日：2012-11-29
发明人： Yun-Jun Kim , Hwan-Sung Cheon , Youn-Jin Cho , Yong-Woon Yoon , Chung-Heon Lee , Hyo-Young Kwon , Yoo-Jeong Choi
IPC分类号： C07C39/21 , G03F7/20 , C07C39/225 , G03F1/00
CPC分类号： C07C39/21 , C07C39/225 , C08G65/38 , G03F1/00 , G03F7/094 , G03F7/20 , H01L21/02118 , H01L21/02282 , H01L21/0332 , H01L21/31144
摘要： Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same. In Chemical Formula 1, A, A′, L and n are the same as in the detailed description.
摘要翻译： 公开了由以下化学式1表示的硬掩模组合物的单体，包含该单体的硬掩模组合物，以及使用其形成图案的方法。 在化学式1中，A，A'，L和n与详细说明中相同。
-
公开(公告)号：US20150205198A1
公开(公告)日：2015-07-23
申请号：US14420957
申请日：2013-09-02
发明人： Chul-Ho Lee , You-Jung Park , Yong-Woon Yoon , Sung-Jae Lee , Youn-Jin Cho , Young-Min Kim , Chung-Heon Lee
IPC分类号： G03F7/004
CPC分类号： G03F7/004 , G03F7/0035 , G03F7/094
摘要： Disclosed are a polymer represented by the Chemical Formula 1, a monomer represented by the Chemical Formula 2, and a solvent, wherein the monomer is included in the same or a higher amount than the polymer, and a method of forming patterns using the same.
摘要翻译： 公开了由化学式1表示的聚合物，由化学式2表示的单体和溶剂，其中所述单体包含在与聚合物相同或更高的量中，以及使用其形成图案的方法。
-
-
-
-
-
搜索结果
6 条记录 (耗时 0.017 秒)
