公开(公告)号：US20080268645A1

公开(公告)日：2008-10-30

申请号：US12134715

申请日：2008-06-06

申请人： CHIEN-TEH KAO ,  Jing-Pei (Connie) Chou ,  Chiukin (Steven) Lai ,  Sal Umotoy ,  Joel M. Huston ,  Son Trinh ,  Mei Chang ,  Xiaoxiong (John) Yuan ,  Yu Chang ,  Xinliang Lu ,  Wei W. Wang ,  See-Eng Phan

发明人： CHIEN-TEH KAO ,  Jing-Pei (Connie) Chou ,  Chiukin (Steven) Lai ,  Sal Umotoy ,  Joel M. Huston ,  Son Trinh ,  Mei Chang ,  Xiaoxiong (John) Yuan ,  Yu Chang ,  Xinliang Lu ,  Wei W. Wang ,  See-Eng Phan

IPC分类号： H01L21/311

CPC分类号： H01L21/02104 ,  C23C14/022 ,  C23C14/50 ,  C23C14/541 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32862 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L2924/0002 ,  H01L2924/00

摘要： In one embodiment, a method for removing native oxides from a substrate surface is provided which includes supporting a substrate containing silicon oxide within a processing chamber, generating a plasma of reactive species from a gas mixture within the processing chamber, cooling the substrate to a first temperature of less than about 65° C. within the processing chamber, and directing the reactive species to the cooled substrate to react with the silicon oxide thereon while forming a film on the substrate. The film usually contains ammonium hexafluorosilicate. The method further provides positioning the substrate in close proximity to a gas distribution plate, and heating the substrate to a second temperature of about 100° C. or greater within the processing chamber to sublimate or remove the film. The gas mixture may contain ammonia, nitrogen trifluoride, and a carrier gas.

摘要翻译： 在一个实施例中，提供了从衬底表面去除天然氧化物的方法，其包括在处理室内支撑含有氧化硅的衬底，从处理室内的气体混合物产生反应物质的等离子体，将衬底冷却至第一 在处理室内温度小于约65℃，并且将反应性物质引导到冷却的基底以与其上的氧化硅反应，同时在基底上形成膜。 该膜通常含有六氟硅酸铵。 该方法进一步提供将衬底定位在紧邻气体分配板的位置，并将衬底加热至处理室内约100℃或更高的第二温度以升华或去除膜。 气体混合物可以含有氨，三氟化氮和载气。

公开(公告)号：US20110223755A1

公开(公告)日：2011-09-15

申请号：US13112875

申请日：2011-05-20

申请人： CHIEN-TEH KAO ,  Jing-Pei(Connie) Chou ,  Chiukin(Steven) Lai ,  Sal Umotoy ,  Joel M. Huston ,  Son Trinh ,  Mei Chang ,  Xiaoxiong (John) Yuan ,  Yu Chang ,  Xinliang Lu ,  Wei W. Wang ,  See-Eng Phan

发明人： CHIEN-TEH KAO ,  Jing-Pei(Connie) Chou ,  Chiukin(Steven) Lai ,  Sal Umotoy ,  Joel M. Huston ,  Son Trinh ,  Mei Chang ,  Xiaoxiong (John) Yuan ,  Yu Chang ,  Xinliang Lu ,  Wei W. Wang ,  See-Eng Phan

IPC分类号： H01L21/28

CPC分类号： H01L21/02104 ,  C23C14/022 ,  C23C14/50 ,  C23C14/541 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32862 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, generating a plasma of a reactive species from a gas mixture within the processing chamber, exposing the substrate to the reactive species while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to vaporize the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.

摘要翻译： 提供了从衬底表面去除天然氧化物的方法。 在一个实施例中，该方法包括将具有氧化物层的衬底定位到处理室中，从处理室内的气体混合物产生反应物质的等离子体，将衬底暴露于反应性物质，同时在衬底上形成挥发性膜 并将衬底保持在低于65℃的温度下，将衬底加热到​​至少约75℃的温度以蒸发挥发性膜并去除氧化物层，并且在加热衬底之后在衬底上沉积第一层 。

公开(公告)号：US20110104897A1

公开(公告)日：2011-05-05

申请号：US13004740

申请日：2011-01-11

申请人： XINLIANG LU ,  CHIEN-TEH KAO ,  CHIUKIN STEVE LAI ,  MEI CHANG

发明人： XINLIANG LU ,  CHIEN-TEH KAO ,  CHIUKIN STEVE LAI ,  MEI CHANG

IPC分类号： H01L21/3205

CPC分类号： H01L21/28518 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/28061 ,  H01L21/321 ,  H01L29/665 ,  H01L29/6659 ,  Y10S438/906

摘要： Embodiments provide methods for treating a metal silicide contact which includes positioning a substrate having an oxide layer disposed on a metal silicide contact surface within a processing chamber, cleaning the metal silicide contact surface to remove the oxide layer while forming a cleaned silicide contact surface during a cleaning process, and exposing the cleaned silicide contact surface to a silicon-containing compound to form a recovered silicide contact surface during a regeneration process. In some examples, the cleaning of the metal silicide contact surface includes cooling the substrate to an initial temperature of less than 65° C., forming reactive species from a gas mixture of ammonia and nitrogen trifluoride by igniting a plasma, exposing the oxide layer to the reactive species to form a thin film, and heating the substrate to about 100° C. or greater to remove the thin film from the substrate while forming the cleaned silicide contact surface.

摘要翻译： 实施例提供了处理金属硅化物接触的方法，其包括将具有设置在处理室内的金属硅化物接触表面上的氧化物层的衬底定位，在金属硅化物接触表面中清洁金属硅化物接触表面以除去氧化物层同时形成清洁的硅化物接触表面 清洁工艺，以及将清洁的硅化物接触表面暴露于含硅化合物，以在再生过程中形成回收的硅化物接触表面。 在一些实例中，金属硅化物接触表面的清洁包括将衬底冷却至低于65℃的初始温度，通过点燃等离子体从氨和三氟化氮的气体混合物形成反应物质，将氧化物层暴露于 反应性物质形成薄膜，并将衬底加热至约100℃或更高以在形成清洁的硅化物接触表面的同时从衬底移除薄膜。