公开(公告)号：US20130341634A1

公开(公告)日：2013-12-26

申请号：US13909927

申请日：2013-06-04

Applicant: CREE, INC.

Inventor： STEN HEIKMAN ,  JAMES IBBETSON

IPC: H01L33/10 ,  H01L33/32

CPC classification number: H01L33/10 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46

Abstract: A high efficiency LED chip is disclosed that comprises an active LED structure comprising an active layer between two oppositely doped layers. A first reflective layer can be provided adjacent to one of the oppositely doped layers, with the first layer comprising a material with a different index of refraction than the active LED structure. The difference in IR between the active LED structure and the first reflective layer increases TIR of light at the junction. In some embodiments the first reflective layer can comprise an IR lower than the semiconductor material, increasing the amount of light that can experience TIR. Some embodiments of LED chips according to the present invention can also comprise a second reflective layer or metal layer on and used in conjunction with the first reflective layer such that light passing through the first reflective layer can be reflected by the second reflective layer.

Abstract translation: 公开了一种高效率LED芯片，其包括在两个相对掺杂的层之间包括有源层的有源LED结构。 第一反射层可以与相对掺杂的层之一相邻地设置，第一层包括与有源LED结构不同的折射率的材料。 有源LED结构和第一反射层之间的IR差异增加了接合处的光的TIR。 在一些实施例中，第一反射层可以包括低于半导体材料的IR，增加可以体验TIR的光量。 根据本发明的LED芯片的一些实施例还可以包括第二反射层或金属层，并且与第一反射层结合使用，使得穿过第一反射层的光可被第二反射层反射。

公开(公告)号：US20140034987A1

公开(公告)日：2014-02-06

申请号：US14047566

申请日：2013-10-07

Applicant: CREE,INC.

Inventor： JAMES IBBETSON ,  TING LI ,  MONICA HANSEN

IPC: H01L33/46

CPC classification number: H01L33/10 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.

Abstract translation: 一种具有与所述LED集成的复合高反射层的高效率发光二极管，以提高发射效率。 发光二极管（LED）芯片的一个实施例包括LED和与LED成一体的复合高反射层，以反射从有源区发射的光。 所述复合层包括第一层和在第一层上交替的多个第二和第三层，以及在所述多个第二层和第三层的最上层的反射层。 第二层和第三层具有不同的折射率，并且第一层比第二层和第三层中最厚的层厚至少三倍。 对于LED芯片内部的复合层，可以通过复合层包括导电通孔，以允许电信号通过复合层到达LED。

公开(公告)号：US20190198725A1

公开(公告)日：2019-06-27

申请号：US16293267

申请日：2019-03-05

Applicant: CREE, INC.

Inventor： MICHAEL S. LEUNG ,  ERIC J. TARSA ,  JAMES IBBETSON

IPC: H01L33/50 ,  H01L23/00 ,  H01L27/15 ,  H01L21/56

CPC classification number: H01L33/504 ,  H01L21/565 ,  H01L24/96 ,  H01L27/15 ,  H01L33/50 ,  H01L2224/2518 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2933/0041 ,  H01L2924/00

Abstract: A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material. One embodiment of an apparatus according to the invention for coating a plurality of semiconductor devices comprises a mold housing having a formation cavity arranged to hold semiconductor devices. The formation cavity is also arranged so that a curable coating material can be injected into and fills the formation cavity to at least partially covering the semiconductor devices.

公开(公告)号：US20140151738A1

公开(公告)日：2014-06-05

申请号：US14173662

申请日：2014-02-05

Applicant: CREE, INC.

Inventor： STEVEN P. DENBAARS ,  JAMES IBBETSON ,  SHUJI NAKAMURA

IPC: H01L33/22 ,  H01L33/42

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/42

Abstract: A light emitting diode (LED) includes a p-type layer of material, an n-type layer of material and an active layer between the p-type layer and the n-type layer. A roughened layer of transparent material is adjacent one of the p-type layer of material and the n-type layer of material. The roughened layer of transparent material has a refractive index close to or substantially the same as the refractive index of the material adjacent the layer of transparent material, and may be a transparent oxide material or a transparent conducting material. An additional layer of conductive material may be between the roughened layer and the n-type or p-type layer.

Abstract translation: 发光二极管（LED）包括p型层材料，n型层材料和p型层与n型层之间的有源层。 透明材料的粗糙层与p型材料层和n型材料层相邻。 透明材料的粗糙层具有接近或基本上等于与透明材料层相邻的材料的折射率的折射率，并且可以是透明氧化物材料或透明导电材料。 附加的导电材料层可以在粗糙层和n型或p型层之间。