公开(公告)号：US20170236718A1

公开(公告)日：2017-08-17

申请号：US15433068

申请日：2017-02-15

Applicant: Cabot Microelectronics Corporation

Inventor： Benjamin PETRO ,  Glenn WHITENER ,  William WARD

IPC: H01L21/306 ,  C09K3/14 ,  H01L29/20 ,  C09G1/02

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1436 ,  H01L21/02024 ,  H01L29/20

Abstract: Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a substrate containing at least one Group III-V material, with a polishing pad and a chemical-mechanical polishing composition comprising water, abrasive particles having a negative surface charge, and an oxidizing agent for oxidizing the Group III-V material in an amount of from about 0.01 wt. %to about 5 wt. %, wherein the polishing composition has a pH of from about 2 to about 5; (b) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate; and (c) abrading at least a portion of the substrate to polish the substrate. In some embodiments, the Group III-V material is a semiconductor that includes at least one element from Group III of the Periodic Table and at least one element from Group V of the Periodic Table.

公开(公告)号：US20170260421A1

公开(公告)日：2017-09-14

申请号：US15603634

申请日：2017-05-24

Applicant: Cabot Microelectronics Corporation

Inventor： Steven KRAFT ,  Andrew WOLFF ,  Phillip W. CARTER ,  Kristin HAYES ,  Benjamin PETRO

IPC: C09G1/02 ,  H01L21/321 ,  B24B37/04 ,  C23F3/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  C23F3/04 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) abrasive particles, (b) a cobalt accelerator selected from a compound having the formula: NR1R2R3 wherein R1, R2, and R3 are independently selected from hydrogen, carboxyalkyl, substituted carboxyalkyl, hydroxyalkyl, substituted hydroxyalkyl and aminocarbonylalkyl, wherein none or one of R1, R2, and R3 are hydrogen; dicarboxyheterocycles; heterocyclylalkyl-α-amino acids; N-(amidoalkyl)amino acids; unsubstituted heterocycles; alkyl-substituted heterocycles; substituted-alkyl-substituted heterocycles; N-aminoalkyl-α-amino acids; and combinations thereof, (c) a cobalt corrosion inhibitor, (d) an oxidizing agent that oxidizes a metal, and (e) water, wherein the polishing composition has a pH of about 3 to about 8.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains cobalt.