中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.016 seconds)

    COMPOSITION FOR TUNGSTEN CMP
    1.
    发明申请
    COMPOSITION FOR TUNGSTEN CMP 有权
    TUNGSTEN CMP的组合物

    公开(公告)号：US20150259572A1

    公开(公告)日：2015-09-17

    申请号：US14203621

    申请日：2014-03-11

    Applicant: Cabot Microelectronics Corporation

    Inventor： Steven GRUMBINE ,  Jeffrey DYSARD ,  Lin FU ,  William WARD ,  Glenn WHITENER

    IPC: C09G1/02 ,  H01L21/306

    CPC classification number: B24B37/044 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C23F1/40 ,  H01L21/3212

    Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

    Abstract translation: 一种用于抛光具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的胶体二氧化硅磨料并具有至少6mV的永久正电荷，液体载体中的溶液中的胺化合物 ，和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

    COMPOSITION FOR TUNGSTEN CMP
    3.
    发明申请
    COMPOSITION FOR TUNGSTEN CMP 有权
    TUNGSTEN CMP的组合物

    公开(公告)号：US20150259573A1

    公开(公告)日：2015-09-17

    申请号：US14203647

    申请日：2014-03-11

    Applicant: Cabot Microelectronics Corporation

    Inventor： Steven GRUMBINE ,  Jeffrey DYSARD ,  Lin FU ,  William WARD ,  Glenn WHITENER

    IPC: C09G1/02 ,  H01L21/306

    CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/3212

    Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, and a polycationic amine compound in solution in the liquid carrier. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

    Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的具有至少6mV的永久正电荷的胶态二氧化硅磨料和在该溶液中的聚阳离子胺化合物 液体载体。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。

    METHOD OF POLISHING GROUP III-V MATERIALS
    4.
    发明申请
    METHOD OF POLISHING GROUP III-V MATERIALS 有权

    公开(公告)号：US20170236718A1

    公开(公告)日：2017-08-17

    申请号：US15433068

    申请日：2017-02-15

    Applicant: Cabot Microelectronics Corporation

    Inventor： Benjamin PETRO ,  Glenn WHITENER ,  William WARD

    IPC: H01L21/306 ,  C09K3/14 ,  H01L29/20 ,  C09G1/02

    CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1436 ,  H01L21/02024 ,  H01L29/20

    Abstract: Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a substrate containing at least one Group III-V material, with a polishing pad and a chemical-mechanical polishing composition comprising water, abrasive particles having a negative surface charge, and an oxidizing agent for oxidizing the Group III-V material in an amount of from about 0.01 wt. %to about 5 wt. %, wherein the polishing composition has a pH of from about 2 to about 5; (b) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate; and (c) abrading at least a portion of the substrate to polish the substrate. In some embodiments, the Group III-V material is a semiconductor that includes at least one element from Group III of the Periodic Table and at least one element from Group V of the Periodic Table.

    MIXED ABRASIVE TUNGSTEN CMP COMPOSITION
    6.
    发明申请
    MIXED ABRASIVE TUNGSTEN CMP COMPOSITION 有权
    混合磨料铁素体组合物

    公开(公告)号：US20150267083A1

    公开(公告)日：2015-09-24

    申请号：US14222736

    申请日：2014-03-24

    Applicant: Cabot Microelectronics Corporation

    Inventor： William WARD ,  Glenn WHITENER ,  Steven GRUMBINE ,  Jeffrey DYSARD

    IPC: C09G1/02 ,  H01L21/321

    CPC classification number: C09G1/02 ,  C09G1/04 ,  H01L21/30625 ,  H01L21/3212

    Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, first and second colloidal silica abrasives dispersed in the liquid carrier, and an iron containing accelerator. The first colloidal silica abrasive and the second colloidal silica abrasive each have a permanent positive charge of at least 10 mV. An average particle size of the second silica abrasive is at least 20 nanometers greater than an average particle size of the first silica abrasive. A method for chemical mechanical polishing a substrate including a tungsten layer is further disclosed. The method may include contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

    Abstract translation: 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的第一和第二胶体二氧化硅研磨剂和含铁促进剂。 第一胶体二氧化硅研磨剂和第二胶态二氧化硅磨料各自具有至少10mV的永久正电荷。 第二硅石研磨剂的平均粒度比第一二氧化硅研磨剂的平均粒径大至少20纳米。 还公开了一种用于化学机械研磨包括钨层的衬底的方法。 该方法可以包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光基底。

Patent Agency Ranking