公开(公告)号：US20190085209A1

公开(公告)日：2019-03-21

申请号：US16131180

申请日：2018-09-14

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin P. DOCKERY ,  Tyler Carter ,  Matthew E. Carnes ,  Jessica VanKuiken ,  Pankaj Singh

IPC: C09G1/02 ,  C23F1/30 ,  B24B37/04

Abstract: A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, abrasive particles dispersed in the liquid carrier, an iron containing accelerator, and a cationic polymer having an amino acid monomer. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above-described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

公开(公告)号：US20190211227A1

公开(公告)日：2019-07-11

申请号：US15864720

申请日：2018-01-08

Applicant: Cabot Microelectronics Corporation

Inventor： Kevin P. DOCKERY ,  Pankaj K. SINGH ,  Steven GRUMBINE ,  Kim LONG

IPC: C09G1/02 ,  C09K3/14 ,  B24B37/04

CPC classification number: C09G1/02 ,  B24B37/044 ,  C09K3/1409

Abstract: The invention provides a chemical-mechanical polishing composition comprising a) surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about −5 mV to about −35 mV at a pH of about 3, b) an iron compound, c) a stabilizing agent, d) a corrosion inhibitor, and e) an aqueous carrier. The invention also provides a method suitable for polishing a substrate.

公开(公告)号：US20180105721A1

公开(公告)日：2018-04-19

申请号：US15784949

申请日：2017-10-16

Applicant: Cabot Microelectronics Corporation

Inventor： Sudeep PALLIKKARA KUTTIATOOR ,  Charles HAMILTON ,  Kevin P. DOCKERY

IPC: C09G1/02 ,  H01L21/3105 ,  H01L21/306 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, a polyhydroxy aromatic carboxylic acid, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.

公开(公告)号：US20200208014A1

公开(公告)日：2020-07-02

申请号：US16236962

申请日：2018-12-31

Applicant: Cabot Microelectronics Corporation

Inventor： Na ZHANG ,  Kevin P. DOCKERY ,  Zhao LIU ,  Roman A. IVANOV

IPC: C09G1/02 ,  H01L21/321

Abstract: A chemical mechanical polishing composition includes a water based liquid carrier, cationic abrasive particles dispersed in the liquid carrier, a first amino acid compound having an isoelectric point of less than 7 and a second amino acid compound having an isoelectric point of greater than 7. The pH of the composition is in a range from about 1 to about 5. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

公开(公告)号：US20190100677A1

公开(公告)日：2019-04-04

申请号：US15723886

申请日：2017-10-03

Applicant: Cabot Microelectronics Corporation

Inventor： Ji CUI ,  Helin HUANG ,  Kevin P. DOCKERY ,  Pankaj K. SINGH ,  Hung-Tsung HUANG ,  Chih-Hsien CHIEN

IPC: C09G1/02 ,  H01L21/768 ,  H01L21/321 ,  H01L21/3105

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) an abrasive selected from the group consisting of alumina, ceria, titania, zirconia, and combinations thereof, wherein the abrasive is surface-coated with a copolymer comprising a combination of sulfonic acid monomeric units and carboxylic acid monomeric units a combination of sulfonic acid monomeric units and phosphonic acid monomeric units, (b) an oxidizing agent, and (c) water, wherein the polishing composition has a pH of about 2 to about 5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate comprises tungsten or cobalt and silicon oxide.