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    Display System Having Improved Multiple Modes For Displaying Image Data From Multiple Input Source Formats
    2.
    发明申请
    Display System Having Improved Multiple Modes For Displaying Image Data From Multiple Input Source Formats 有权
    显示系统改进了多种模式，用于从多个输入源格式显示图像数据

    公开(公告)号：US20060238649A1

    公开(公告)日：2006-10-26

    申请号：US11427254

    申请日：2006-06-28

    申请人： Candice Brown Elliott ,  Michael Higgins ,  Seok Han ,  Thomas Credelle

    发明人： Candice Brown Elliott ,  Michael Higgins ,  Seok Han ,  Thomas Credelle

    IPC分类号： H04N7/01 ,  H04N11/20

    CPC分类号： H04N7/0125 ,  G06T3/4023 ,  H04N7/0102 ,  H04N9/641

    摘要： Systems and methods are herein given to effect a multiple mode display system that may accept multiple input image data formats and output several possible image data format. In a first embodiment, an image processing system comprises: an input that receives a plurality of source image data, said plurality of source image data further comprising a plurality of source image data formats; circuitry that resamples source image data from said source image data format to a plurality of target image data formats; and a display that renders target image data wherin the resolution of the display comprises approximately one half resolution of the largest of said plurality of target image data formats.

    摘要翻译： 这里给出了系统和方法来实现可以接受多个输入图像数据格式并输出若干可能的图像数据格式的多模式显示系统。 在第一实施例中，图像处理系统包括：接收多个源图像数据的输入，所述多个源图像数据还包括多个源图像数据格式; 将源图像数据从所述源图像数据格式重新采样到多个目标图像数据格式的电路; 并且使得呈现显示器的分辨率的目标图像数据的显示器包括所述多个目标图像数据格式中最大的一半分辨率。

    System and method for improving sub-pixel rendering of image data in non-striped display systems
    3.
    发明申请
    System and method for improving sub-pixel rendering of image data in non-striped display systems 有权
    用于改善非条纹显示系统中图像数据的子像素渲染的系统和方法

    公开(公告)号：US20050225548A1

    公开(公告)日：2005-10-13

    申请号：US10821387

    申请日：2004-04-09

    申请人： Seok Han ,  Bai-Shuh Hsu ,  Moon Im

    发明人： Seok Han ,  Bai-Shuh Hsu ,  Moon Im

    IPC分类号： G09G5/00

    CPC分类号： G09G5/006 ,  G09G3/2074 ,  G09G2300/0443 ,  G09G2340/0421 ,  G09G2340/0457

    摘要： The present application discloses a number of embodiments for the mapping of input image data onto display panels in which the subpixel data format being input may differ from the subpixel data format suitable for the display panel. Systems and methods are disclosed to map input image data onto panels with different ordering of subpixel data that the input, different number of subpixel data sets or different number of color primaries that the input image data.

    摘要翻译： 本申请公开了用于将输入图像数据映射到显示面板上的多个实施例，其中输入的子像素数据格式可能与适用于显示面板的子像素数据格式不同。 公开了系统和方法，以将输入图像数据映射到具有不同数量的子像素数据的不同顺序的面板上，输入，不同数量的子像素数据集或输入图像数据的不同数量的色母。

    Photosensitive resin, photoresist composition having the photosensitive resin and method of forming a photoresist pattern using the photoresist composition
    5.
    发明申请
    Photosensitive resin, photoresist composition having the photosensitive resin and method of forming a photoresist pattern using the photoresist composition 有权
    光敏树脂，具有感光性树脂的光致抗蚀剂组合物和使用光致抗蚀剂组合物形成光刻胶图案的方法

    公开(公告)号：US20060188821A1

    公开(公告)日：2006-08-24

    申请号：US11350559

    申请日：2006-02-08

    申请人： Seok Han ,  Sangwoong Yoon ,  Young-Ho Kim

    发明人： Seok Han ,  Sangwoong Yoon ,  Young-Ho Kim

    IPC分类号： G03C1/76

    CPC分类号： G03F7/0392

    摘要： In a photosensitive resin, a photoresist composition including the photosensitive resin and a method of forming a photoresist pattern using the photoresist composition, the photosensitive resin includes a hydrophobic terminal group having at least five carbon atoms and a blocking group. The photosensitive resin has a weight average molecular weight of from about 6,000 up to about 9,500. The photoresist composition including the photosensitive resin may form a photoresist pattern having a reduced line edge roughness and a fine line width with accuracy.

    摘要翻译： 在感光性树脂中，包含感光性树脂的光致抗蚀剂组合物和使用光致抗蚀剂组合物形成光致抗蚀剂图案的方法，感光性树脂包括具有至少5个碳原子的疏水性端基和封端基。 感光性树脂的重均分子量为约6,000至约9,500。 包含感光性树脂的光致抗蚀剂组合物可以精确地形成具有线边缘粗糙度和细线宽度降低的光致抗蚀剂图案。

    Method of forming a pattern using a photoresist composition for immersion lithography
    6.
    发明授权
    Method of forming a pattern using a photoresist composition for immersion lithography 有权
    使用用于浸渍光刻的光致抗蚀剂组合物形成图案的方法

    公开(公告)号：US07968275B2

    公开(公告)日：2011-06-28

    申请号：US12329189

    申请日：2008-12-05

    申请人： Seok Han ,  Young-Hoon Kim ,  Hyo-Sun Kim

    发明人： Seok Han ,  Young-Hoon Kim ,  Hyo-Sun Kim

    IPC分类号： G03F7/20 ,  G03F7/30 ,  G03F7/38 ,  G03F7/039

    CPC分类号： G03F7/0397 ,  G03F7/0392 ,  G03F7/2041 ,  Y10S430/111

    摘要： A photoresist composition for immersion lithography and a method of forming a photoresist pattern using the photoresist composition are disclosed. The photoresist composition includes a photosensitive polymer including a cycloaliphatic group blocked with at least two cyclic acetal groups as a side chain, a photoacid generator and an organic solvent. The hydrophobic photoresist composition may be changed into the hydrophilic photoresist composition by an exposure process. Thus, before the exposure process, the photoresist composition may be insoluble in a liquid for the immersion lithography. After the exposure process, an exposure portion of a photoresist film formed using the photoresist composition may be effectively dissolved in a developing solution to form a uniform photoresist pattern.

    摘要翻译： 公开了一种用于浸没式光刻的光致抗蚀剂组合物和使用光致抗蚀剂组合物形成光致抗蚀剂图案的方法。 光致抗蚀剂组合物包括光敏聚合物，其包含用作为侧链的至少两个环状缩醛基封端的脂环族基团，光酸产生剂和有机溶剂。 疏水性光致抗蚀剂组合物可通过曝光方法改变为亲水性光致抗蚀剂组合物。 因此，在曝光处理之前，光致抗蚀剂组合物可能不溶于用于浸渍光刻的液体。 在曝光处理之后，使用光致抗蚀剂组合物形成的光致抗蚀剂膜的曝光部分可以有效地溶解在显影液中以形成均匀的光致抗蚀剂图案。

    Method of forming a pattern and method of manufacturing a capacitor using the same
    8.
    发明授权
    Method of forming a pattern and method of manufacturing a capacitor using the same 有权
    形成图案的方法和使用其形成电容器的方法

    公开(公告)号：US07638388B2

    公开(公告)日：2009-12-29

    申请号：US11945922

    申请日：2007-11-27

    申请人： Kyoung-Min Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Boo-Deuk Kim ,  Seok Han

    发明人： Kyoung-Min Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Boo-Deuk Kim ,  Seok Han

    IPC分类号： H01L21/8244

    CPC分类号： H01G4/33 ,  H01G4/40 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91

    摘要： In a method of forming a pattern and a method of manufacturing a capacitor using the same, a conductive layer is formed on a mold layer having an opening. A first buffer layer pattern including a polymer having a repeating unit of anthracene-methyl methacrylate and a repeating unit of alkoxyl-vinyl benzene is formed on the conductive layer in the opening. The first buffer layer pattern is baked to cross-link the polymers and form a second buffer layer pattern that is insoluble in a developing solution. The conductive layer on a top portion of the mold layer is selectively removed by using the second buffer layer pattern as an etching mask. Accordingly, a conductive pattern for a semiconductor device is formed. The method of forming a pattern may simplify manufacturing processes for a capacitor and a semiconductor device, and may improve their efficiencies.

    摘要翻译： 在形成图案的方法和使用其的电容器的制造方法中，在具有开口的模具层上形成导电层。 在开口中的导电层上形成包含具有蒽 - 甲基丙烯酸甲酯的重复单元的聚合物和烷氧基 - 乙烯基苯的重复单元的第一缓冲层图案。 烘烤第一缓冲层图案以交联聚合物并形成不溶于显影溶液的第二缓冲层图案。 通过使用第二缓冲层图案作为蚀刻掩模，选择性地去除模层顶部的导电层。 因此，形成用于半导体器件的导电图案。 形成图案的方法可以简化电容器和半导体器件的制造工艺，并且可以提高它们的效率。

    METHOD OF FORMING A PATTERN USING A PHOTORESIST COMPOSITION FOR IMMERSION LITHOGRAPHY
    9.
    发明申请
    METHOD OF FORMING A PATTERN USING A PHOTORESIST COMPOSITION FOR IMMERSION LITHOGRAPHY 有权
    使用光刻胶组合物形成图案的方法

    公开(公告)号：US20090176177A1

    公开(公告)日：2009-07-09

    申请号：US12329189

    申请日：2008-12-05

    申请人： Seok Han ,  Young-Hoon Kim ,  Hyo-Sun Kim

    发明人： Seok Han ,  Young-Hoon Kim ,  Hyo-Sun Kim

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0397 ,  G03F7/0392 ,  G03F7/2041 ,  Y10S430/111

    摘要： A photoresist composition for immersion lithography and a method of forming a photoresist pattern using the photoresist composition are disclosed. The photoresist composition includes a photosensitive polymer including a cycloaliphatic group blocked with at least two cyclic acetal groups as a side chain, a photoacid generator and an organic solvent. The hydrophobic photoresist composition may be changed into the hydrophilic photoresist composition by an exposure process. Thus, before the exposure process, the photoresist composition may be insoluble in a liquid for the immersion lithography. After the exposure process, an exposure portion of a photoresist film formed using the photoresist composition may be effectively dissolved in a developing solution to form a uniform photoresist pattern.

    摘要翻译： 公开了一种用于浸没式光刻的光致抗蚀剂组合物和使用光致抗蚀剂组合物形成光致抗蚀剂图案的方法。 光致抗蚀剂组合物包括光敏聚合物，其包含用作为侧链的至少两个环状缩醛基封闭的脂环族基团，光酸产生剂和有机溶剂。 疏水性光致抗蚀剂组合物可通过曝光方法改变为亲水性光致抗蚀剂组合物。 因此，在曝光处理之前，光致抗蚀剂组合物可能不溶于用于浸渍光刻的液体。 在曝光处理之后，使用光致抗蚀剂组合物形成的光致抗蚀剂膜的曝光部分可以有效地溶解在显影液中以形成均匀的光致抗蚀剂图案。

    Photoresist compositions and methods of forming a pattern using the same
    10.
    发明申请
    Photoresist compositions and methods of forming a pattern using the same 审中-公开
    光刻胶组合物和使用其形成图案的方法

    公开(公告)号：US20080102403A1

    公开(公告)日：2008-05-01

    申请号：US11977893

    申请日：2007-10-26

    申请人： Seong-June Kim ,  Kyoung-Mi Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Seok Han ,  Hyo-Jin Yun

    发明人： Seong-June Kim ,  Kyoung-Mi Kim ,  Jae-Ho Kim ,  Young-Ho Kim ,  Seok Han ,  Hyo-Jin Yun

    IPC分类号： G03C1/00

    CPC分类号： G03F7/0397 ,  G03F7/40

    摘要： A photoresist-composition includes about 4 to about 20 percent by weight of an acrylate copolymer; about 0.1 to about 0.5 percent by weight of a photoacid generator; and a solvent. The acrylate copolymer includes about 28 to about 38 percent by mole of a first repeating unit represented by Formula (1), about 28 to about 38 percent by mole of a second repeating unit represented by Formula (2), about 0.5 to about 22 percent by mole of a third repeating unit represented by Formula (3) and about 4 to about 42 percent by mole of a fourth repeating unit represented by Formula (4), wherein R1, R2, R3 and R4 independently represent a hydrogen atom or a C1-C3 alkyl group, X is a blocking group including an alkyl-substituted adamantane or an alkyl-substituted tricycloalkane, Y is a blocking group including a lactone, Z1 is a blocking group including a hydroxyl-substituted adamantane, and Z2 is a blocking group including an alkoxy-substituted adamantane.

    摘要翻译： 光致抗蚀剂组合物包含约4至约20重量％的丙烯酸酯共聚物; 约0.1至约0.5重量％的光酸产生剂; 和溶剂。 丙烯酸酯共聚物包含约28至约38摩尔％的由式（1）表示的第一重复单元，约28至约38摩尔％的由式（2）表示的第二重复单元，约0.5至约22重量％ 的由式（3）表示的第三重复单元和约4至约42摩尔％的由式（4）表示的第四重复单元，其中R 1，R 2 R 3和R 4独立地表示氢原子或C 1 -C 3 - 烷基，X是包括烷基取代的金刚烷或烷基取代的三环烷烃的封闭基团，Y是包含内酯的封闭基团，Z 1是包含羟基取代的金刚烷的封闭基团， Z 2是含有烷氧基取代的金刚烷的封端基。