摘要:
The invention relates to a method for compensating at least one defect of an optical system which includes introducing an arrangement of local persistent modifications in at least one optical element of the optical system, which does not have pattern elements on one of its optical surfaces, so that the at least one defect is at least partially compensated.
摘要:
The invention relates to a method for compensating at least one defect of an optical system which comprises introducing an arrangement of local persistent modifications in at least one optical element of the optical system, which does not have pattern elements on one of its optical surfaces, so that the at least one defect is at least partially compensated.
摘要:
A polarization measuring device (10) for determining the polarization of a light beam (16, 46) that includes a reflector (12, 58) and a detector (14, 20). The reflector (12, 58) is configured such that the plane of incidence of the light rays in the light beam (16, 46) varies in a location-dependent manner, such that the reflector (12, 58) reflects differing polarization components of the light beam (16, 46) to different extents depending on the plane of incidence. The detector (14, 20) serves to detect the differing polarization components.
摘要:
A method of lithographically transferring a pattern on a light sensitive surface in a multiple exposure process comprises the following steps: a) providing a mask comprising a first mask pattern area and a second mask pattern area; b) directing projection light on the mask, thereby producing on the light sensitive surface a first exposed pattern area, which is an image of the first mask pattern area, and a second exposed pattern area, which is an image of the second mask pattern area. The projection light illuminating the first and second mask pattern area has different angular light distributions. c) repeating step b) using the same mask so that an image of the first mask pattern area is superimposed on the second exposure pattern area.
摘要:
An optical system of a microlithographic projection exposure apparatus includes at least one mirror arrangement having a plurality of mirror elements which are displaceable independently of each other for altering an angular distribution of the light reflected by the mirror arrangement. The optical system also includes a polarization-influencing optical arrangement including a first lambda/2 plate and at least one additional lambda/2 plate.
摘要:
An EUV light source serves for generating a usable output beam of EUV illumination light for a projection exposure apparatus for projection lithography. The light source has an EUV generation device which generates an EUV raw output beam. The latter is circularly polarized. For the purposes of setting the polarization of the usable output beam and in respect of the polarization direction, a polarization setting device has a linearly polarizing effect on the raw output beam. This results in an EUV light source, which provides an improved output beam for a resolution-optimized illumination.
摘要:
The invention relates to an optical system, in particular of a microlithographic projection exposure apparatus, with an optical system axis (OA) and a polarization-influencing optical arrangement. According to one aspect, the polarization-influencing optical arrangement comprises at least one polarization-influencing optical element, which has a monolithic design and linear birefringence, wherein the overall absolute value of the birefringence of all of the polarization-influencing optical elements deviates by at most +15% from the value lambda/2, wherein lambda is the working wavelength of the optical system, wherein the direction of the fast axis of this birefringence varies in a plane perpendicular to the optical system axis (OA) in the at least one polarization-influencing optical element, and wherein the distribution of the fast axis of the birefringence of the polarization-influencing optical element is brought about by radiation-induced defects, which are situated in at least one optically unused region of the element.
摘要:
A method for adjusting an optical system in a microlithographic projection exposure apparatus includes establishing, for a given actual position of a polarization-influencing component, a distribution of IPS values in a pupil plane of the projection exposure apparatus. Each IPS value denotes the degree of realization of a predetermined polarization state for a light ray reflected at a respective mirror element of the mirror arrangement. The method also includes changing the position of the polarization-influencing component on the basis of the established distribution.
摘要:
The disclosure relates to optical systems of a microlithographic projection exposure apparatus, and to a microlithographic exposure method. According to an aspect of the disclosure, an optical system has a light source, a ray-splitting optical element, which splits a light ray incident on this element when the projection exposure apparatus is in operation into a first partial ray and a second partial ray, with the first and the second partial ray having mutually orthogonal polarization directions, and at least one ray-deflecting optical element for generating a desired polarized illumination setting from the first partial ray and the second partial ray, wherein the ray-splitting optical element is arranged such that light incident on this ray-splitting optical element when the projection exposure apparatus is in operation has a degree of polarization of less than one.