Polarization measuring device, lithography apparatus, measuring arrangement, and method for polarization measurement

    公开(公告)号:US10041836B2

    公开(公告)日:2018-08-07

    申请号:US14799503

    申请日:2015-07-14

    发明人: Ingo Saenger

    IPC分类号: G03B27/72 G01J4/04 G03F7/20

    摘要: A polarization measuring device (10) for determining the polarization of a light beam (16, 46) that includes a reflector (12, 58) and a detector (14, 20). The reflector (12, 58) is configured such that the plane of incidence of the light rays in the light beam (16, 46) varies in a location-dependent manner, such that the reflector (12, 58) reflects differing polarization components of the light beam (16, 46) to different extents depending on the plane of incidence. The detector (14, 20) serves to detect the differing polarization components.

    Method of lithographically transferring a pattern on a light sensitive surface and illumination system of a microlithographic projection exposure apparatus
    5.
    发明授权
    Method of lithographically transferring a pattern on a light sensitive surface and illumination system of a microlithographic projection exposure apparatus 有权
    在光敏表面上光刻转印图案的方法和微光刻投影曝光装置的照明系统

    公开(公告)号:US09581910B2

    公开(公告)日:2017-02-28

    申请号:US14747441

    申请日:2015-06-23

    IPC分类号: G03B27/54 G03F7/20

    CPC分类号: G03F7/70058

    摘要: A method of lithographically transferring a pattern on a light sensitive surface in a multiple exposure process comprises the following steps: a) providing a mask comprising a first mask pattern area and a second mask pattern area; b) directing projection light on the mask, thereby producing on the light sensitive surface a first exposed pattern area, which is an image of the first mask pattern area, and a second exposed pattern area, which is an image of the second mask pattern area. The projection light illuminating the first and second mask pattern area has different angular light distributions. c) repeating step b) using the same mask so that an image of the first mask pattern area is superimposed on the second exposure pattern area.

    摘要翻译: 在多次曝光过程中在光敏表面上光刻转印图案的方法包括以下步骤:a)提供包括第一掩模图案区域和第二掩模图案区域的掩模; b)将投影光引导到掩模上,从而在光敏表面上产生作为第一掩模图案区域的图像的第一曝光图案区域和作为第二掩模图案区域的图像的第二曝光图案区域 。 照射第一和第二掩模图案区域的投影光具有不同的角度光分布。 c)重复步骤b)使用相同的掩模,使得第一掩模图案区域的图像叠加在第二曝光图案区域上。

    Optical system of a microlithographic projection exposure apparatus
    6.
    发明授权
    Optical system of a microlithographic projection exposure apparatus 有权
    微光刻投影曝光装置的光学系统

    公开(公告)号:US09323156B2

    公开(公告)日:2016-04-26

    申请号:US13661381

    申请日:2012-10-26

    IPC分类号: G03B27/54 G03F7/20

    CPC分类号: G03F7/70116 G03F7/70566

    摘要: An optical system of a microlithographic projection exposure apparatus includes at least one mirror arrangement having a plurality of mirror elements which are displaceable independently of each other for altering an angular distribution of the light reflected by the mirror arrangement. The optical system also includes a polarization-influencing optical arrangement including a first lambda/2 plate and at least one additional lambda/2 plate.

    摘要翻译: 微光刻投影曝光装置的光学系统包括具有多个镜元件的至少一个反射镜装置,所述多个反射镜元件可彼此独立地移位,以改变由反射镜装置反射的光的角分布。 光学系统还包括偏振影响光学装置,其包括第一λ/ 2板和至少一个附加的λ/ 2板。

    OPTICAL SYSTEM, IN PARTICULAR OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    8.
    发明申请
    OPTICAL SYSTEM, IN PARTICULAR OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
    光学系统,特别是微波投影曝光装置

    公开(公告)号:US20150062551A1

    公开(公告)日:2015-03-05

    申请号:US14501770

    申请日:2014-09-30

    发明人: Ingo Saenger

    IPC分类号: G03F7/20

    摘要: The invention relates to an optical system, in particular of a microlithographic projection exposure apparatus, with an optical system axis (OA) and a polarization-influencing optical arrangement. According to one aspect, the polarization-influencing optical arrangement comprises at least one polarization-influencing optical element, which has a monolithic design and linear birefringence, wherein the overall absolute value of the birefringence of all of the polarization-influencing optical elements deviates by at most +15% from the value lambda/2, wherein lambda is the working wavelength of the optical system, wherein the direction of the fast axis of this birefringence varies in a plane perpendicular to the optical system axis (OA) in the at least one polarization-influencing optical element, and wherein the distribution of the fast axis of the birefringence of the polarization-influencing optical element is brought about by radiation-induced defects, which are situated in at least one optically unused region of the element.

    摘要翻译: 本发明涉及具有光学系统轴(OA)和偏振影响光学布置的光学系统,特别是微光刻投影曝光装置。 根据一个方面,偏振影响光学装置包括至少一个偏振影响光学元件,其具有单片设计和线性双折射,其中所有偏振影响光学元件的双折射的总绝对值偏离在 大约+ 15%的λ/ 2值,其中λ是光学系统的工作波长,其中该双折射的快轴的方向在垂直于光学系统轴线(OA)的平面中在至少一个 偏振影响光学元件,并且其中偏振影响光学元件的双折射的快轴的分布由位于元件的至少一个光学未使用区域中的辐射诱发缺陷引起。

    METHOD FOR ADJUSTING AN OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    9.
    发明申请
    METHOD FOR ADJUSTING AN OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
    调整微观投影曝光装置光学系统的方法

    公开(公告)号:US20140362362A1

    公开(公告)日:2014-12-11

    申请号:US14458423

    申请日:2014-08-13

    IPC分类号: G03F7/20

    摘要: A method for adjusting an optical system in a microlithographic projection exposure apparatus includes establishing, for a given actual position of a polarization-influencing component, a distribution of IPS values in a pupil plane of the projection exposure apparatus. Each IPS value denotes the degree of realization of a predetermined polarization state for a light ray reflected at a respective mirror element of the mirror arrangement. The method also includes changing the position of the polarization-influencing component on the basis of the established distribution.

    摘要翻译: 一种用于在微光刻投影曝光装置中调整光学系统的方法包括针对偏振影响分量的给定实际位置建立投影曝光装置的光瞳平面中的IPS值的分布。 每个IPS值表示在反射镜装置的各个反射镜元件处反射的光线的预定偏振态的实现程度。 该方法还包括基于建立的分布来改变偏振影响分量的位置。

    OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS, AND MICROLITHOGRAPHIC EXPOSURE
    10.
    发明申请
    OPTICAL SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS, AND MICROLITHOGRAPHIC EXPOSURE 有权
    微观投影曝光装置的光学系统和微观曝光

    公开(公告)号:US20140132942A1

    公开(公告)日:2014-05-15

    申请号:US14143878

    申请日:2013-12-30

    IPC分类号: G03F7/20

    摘要: The disclosure relates to optical systems of a microlithographic projection exposure apparatus, and to a microlithographic exposure method. According to an aspect of the disclosure, an optical system has a light source, a ray-splitting optical element, which splits a light ray incident on this element when the projection exposure apparatus is in operation into a first partial ray and a second partial ray, with the first and the second partial ray having mutually orthogonal polarization directions, and at least one ray-deflecting optical element for generating a desired polarized illumination setting from the first partial ray and the second partial ray, wherein the ray-splitting optical element is arranged such that light incident on this ray-splitting optical element when the projection exposure apparatus is in operation has a degree of polarization of less than one.

    摘要翻译: 本公开涉及微光刻投影曝光装置的光学系统以及微光刻曝光方法。 根据本公开的一个方面,一种光学系统具有光源,分光光学元件,其在投影曝光装置工作时分裂入射在该元件上的光线到第一部分光线和第二部分光线 其中第一和第二部分光线具有相互正交的偏振方向,以及至少一个光线偏转光学元件,用于从第一部分光线和第二部分光线产生期望的偏振照明设置,其中光线分离光学元件是 被布置成使得当投影曝光装置运行时入射在该分光光学元件上的光具有小于1的偏振度。