摘要:
A projection objective with obscurated pupil for microlithography has a first optical surface, which has a first region provided for application of useful light, and at least one second optical surface, which has a second region provided for application of useful light. A beam envelope of the useful light extends between the first region and the second region. At least one tube open on the input side and on the output side in the light propagation direction severs to screen scattered light. The at least one tube is between the first optical surface and the second optical surface. The wall of the tube is opaque in the wavelength range of the useful light. The tube extends in the propagation direction of the useful light over at least a partial length of the beam envelope and circumferentially surrounds the beam envelope.
摘要:
Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.
摘要:
The invention relates to an optical system for a microlithographic projection exposure apparatus, including an optical system axis (OA) and a polarization-influencing optical arrangement, wherein the polarization-influencing optical arrangement includes a first polarization-influencing element, which is produced from optically uniaxial crystal material and has a first orientation of the optical crystal axis, the-first orientation being perpendicular to the optical system axis and a thickness that varies in the direction of the optical system axis, and a second polarization-influencing element, which is arranged downstream of the first polarization-influencing element in the light propagation direction, is produced from optically uniaxial crystal material and has a second orientation of the optical crystal axis, the second orientation being perpendicular to the optical system axis, and a plane-parallel geometry, wherein the second orientation is different from the first orientation.
摘要:
Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.
摘要:
A collector for a projection exposure apparatus for microlithography comprises a plurality of reflective sections which are embodied and arranged in such a way that they can be impinged upon during the focusing of radiation from a first focus into a second focus with angles of impingement in a predefined angular spectrum.
摘要:
An EUV light source serves for generating a usable output beam of EUV illumination light for a projection exposure apparatus for projection lithography. The light source has an EUV generation device which generates an EUV raw output beam. The latter is circularly polarized. For the purposes of setting the polarization of the usable output beam and in respect of the polarization direction, a polarization setting device has a linearly polarizing effect on the raw output beam. This results in an EUV light source, which provides an improved output beam for a resolution-optimized illumination.
摘要:
A lithography projection objective for imaging a pattern in an object plane onto a substrate in an image plane. The projection objective comprises a multiplicity of optical elements along an optical axis. The optical elements comprise a first group of optical elements following the object plane, and a last optical element, following the first group and next to the image plane. The projection objective is tunable or tuned with respect to aberrations for the case that the volume between the last optical element and the image plane is filled by an immersion medium with a refractive index substantially greater than 1. The position of the last optical element is adjustable in the direction of the optical axis. A positioning device is provided that positions at least the last optical element during immersion operation such that aberrations induced by disturbance are at least partially compensated.
摘要:
Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.
摘要:
Microlithography projection objectives for imaging into an image plane a pattern arranged in an object plane are described with respect to suppressing false light in such projection objectives.
摘要:
A lithography projection objective for imaging a pattern in an object plane onto a substrate in an image plane. The projection objective comprises a multiplicity of optical elements along an optical axis. The optical elements comprise a first group of optical elements following the object plane, and a last optical element, following the first group and next to the image plane. The projection objective is tunable or tuned with respect to aberrations for the case that the volume between the last optical element and the image plane is filled by an immersion medium with a refractive index substantially greater than 1. The position of the last optical element is adjustable in the direction of the optical axis. A positioning device is provided that positions at least the last optical element during immersion operation such that aberrations induced by disturbance are at least partially compensated.