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1.发明授权Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting 有权通过激光熔化对晶片接合AlxGayInzN结构进行厚度裁剪公开(公告)号：US06280523B1
公开(公告)日：2001-08-28
申请号：US09245448
申请日：1999-02-05
IPC分类号： C30B2512
CPC分类号： H01L33/465 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/105 , H01S5/0216 , H01S5/0217 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/32341 , Y10S117/915
摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
摘要翻译： 具有垂直光路的发光器件，例如 可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。 发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。 电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。 电触点被添加到发光器件中。
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2.发明授权Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks 有权制造具有铝镓铟氮化物结构和反射镜叠层的发光器件的方法公开(公告)号：US06420199B1
公开(公告)日：2002-07-16
申请号：US09923711
申请日：2001-08-06
申请人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
发明人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
IPC分类号： H05L2120
CPC分类号： H01L33/105 , B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/465 , H01S5/0216 , H01S5/0217 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/34333 , Y10S438/977
摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
摘要翻译： 具有垂直光路的发光器件，例如 可以使用晶片接合或金属焊接技术来实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。 发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。 电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。 电触点被添加到发光器件中。
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3.发明授权Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks 有权具有晶片结合的铝镓铟氮化物结构和反射镜叠层的发光器件公开(公告)号：US06320206B1
公开(公告)日：2001-11-20
申请号：US09245435
申请日：1999-02-05
申请人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
发明人： Carrie Carter Coman , R. Scott Kern , Fred A. Kish, Jr. , Michael R Krames , Arto V. Nurmikko , Yoon-Kyu Song
IPC分类号： H01L3300
CPC分类号： H01L33/105 , B82Y20/00 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/465 , H01S5/0216 , H01S5/0217 , H01S5/18341 , H01S5/18361 , H01S5/1838 , H01S5/34333 , Y10S438/977
摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
摘要翻译： 具有垂直光路的发光器件，例如 可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。 发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。 电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。 电触点被添加到发光器件中。
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公开(公告)号：US06800500B2
公开(公告)日：2004-10-05
申请号：US10631001
申请日：2003-07-29
IPC分类号： H01L2120
CPC分类号： H01L33/40 , H01L33/32 , H01S5/0216 , H01S5/0421 , H01S5/18341 , H01S5/32341
摘要： A III-nitride light-emitting structure including a p-type layer, an n-type layer, and a light emitting layer is grown on a growth substrate. The III-nitride light-emitting structure is wafer bonded to a host substrate, then the growth substrate is removed. In some embodiments, a first electrical contact and first bonding layer are formed on the III-nitride light-emitting structure. A second bonding layer is formed on the host substrate. In such embodiments, wafer bonding the III-nitride light emitting structure to the host substrate comprises bonding the first bonding layer to the second bonding layer. After the growth substrate is removed, a second electrical contact may be formed on a side of the III-nitride light-emitting device exposed by removal of the growth substrate.
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公开(公告)号：US07491565B2
公开(公告)日：2009-02-17
申请号：US11330209
申请日：2006-01-10
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L33/32 , H01S5/0216 , H01S5/0421 , H01S5/18341 , H01S5/32341
摘要： Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode structure that result in improved performance and or cost-effectiveness are described. Furthermore, metal bonding, substrate liftoff, and a novel RIE device separation technique are employed to efficiently produce vertical GaN LEDs on a substrate chosen for its thermal conductivity and ease of fabrication.
摘要翻译： 描述了从蓝宝石生长衬底去除发光层所产生的用于制造InAlGaN发光器件的器件和技术。 在几个实施例中，描述了用于制造导致改进的性能和/或成本效益的垂直InAlGaN发光二极管结构的技术。 此外，采用金属结合，衬底剥离和新颖的RIE器件分离技术来有效地在选择用于其导热性和易于制造的衬底上生产垂直GaN LED。
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