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    III-nitride light emitting devices fabricated by substrate removal
    2.
    发明授权
    III-nitride light emitting devices fabricated by substrate removal 有权
    通过衬底去除制造的III族氮化物发光器件

    公开(公告)号：US07491565B2

    公开(公告)日：2009-02-17

    申请号：US11330209

    申请日：2006-01-10

    申请人： Carrie Carter Coman ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Paul S Martin

    发明人： Carrie Carter Coman ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Paul S Martin

    IPC分类号： H01L21/00

    CPC分类号： H01L33/40 ,  H01L33/32 ,  H01S5/0216 ,  H01S5/0421 ,  H01S5/18341 ,  H01S5/32341

    摘要： Devices and techniques for fabricating InAlGaN light-emitting devices are described that result from the removal of light-emitting layers from the sapphire growth substrate. In several embodiments, techniques for fabricating a vertical InAlGaN light-emitting diode structure that result in improved performance and or cost-effectiveness are described. Furthermore, metal bonding, substrate liftoff, and a novel RIE device separation technique are employed to efficiently produce vertical GaN LEDs on a substrate chosen for its thermal conductivity and ease of fabrication.

    摘要翻译： 描述了从蓝宝石生长衬底去除发光层所产生的用于制造InAlGaN发光器件的器件和技术。 在几个实施例中，描述了用于制造导致改进的性能和/或成本效益的垂直InAlGaN发光二极管结构的技术。 此外，采用金属结合，衬底剥离和新颖的RIE器件分离技术来有效地在选择用于其导热性和易于制造的衬底上生产垂直GaN LED。

    Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power led chip
    6.
    发明授权
    Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power led chip 有权
    在大功率LED芯片上的反射可焊接触点中增加镜面反射率的扩散势垒

    公开(公告)号：US06593160B2

    公开(公告)日：2003-07-15

    申请号：US09778174

    申请日：2001-02-06

    申请人： Carrie Carter-Coman ,  Gloria Hofler ,  Fred A. Kish, Jr.

    发明人： Carrie Carter-Coman ,  Gloria Hofler ,  Fred A. Kish, Jr.

    IPC分类号： H01L2158

    CPC分类号： H01L33/405

    摘要： A solderable light-emitting diode (LED) chip and a method of fabricating an LED lamp embodying the LED chip utilize a diffusion barrier that appreciably blocks molecular migration between two different layers of the LED chip during high temperature processes. In the preferred embodiment, the two different layers of the LED chip are a back reflector and a solder layer. The prevention of intermixing of the materials in the back reflector and the solder layer impedes degradation of the back reflector with respect to its ability to reflect light emitted by the LED. The LED chip includes a high power AlInGaP LED or other type of LED, a back reflector, a diffusion barrier and a solder layer. Preferably, the back reflector is composed of silver (Ag) or Ag alloy and the solder layer is made of indium (In), lead (Pb), gold (Au), tin (Sn), or their alloy and eutectics. In a first embodiment, the diffusion layer is made of nickel (Ni) or nickel-vanadium (NiV). In a second embodiment of the invention, the diffusion barrier is made of titanium-tungsten-nitride (TiW:N). In addition to preventing the intermixing of the In of the solder layer with the Ag of the back reflector, the diffusion layer prevents degradation of the Ag reflective properties in the back reflector upon exposure to air. In an alternative embodiment, the diffusion layer is made of a non-conductive material.

    摘要翻译： 可焊接的发光二极管（LED）芯片和制造实施LED芯片的LED灯的方法利用在高温过程中可以明显阻挡LED芯片的两个不同层之间的分子迁移的扩散阻挡层。 在优选实施例中，LED芯片的两个不同层是后反射器和焊料层。 防止背反射器和焊料层中的材料的混合相对于其反射由LED发射的光的能力而妨碍背反射器的劣化。 LED芯片包括高功率AlInGaP LED或其他类型的LED，后反射器，扩散阻挡层和焊料层。 优选地，背反射器由银（Ag）或Ag合金构成，并且焊料层由铟（In），铅（Pb），金（Au），锡（Sn）或其合金和共晶体制成。 在第一实施例中，扩散层由镍（Ni）或镍 - 钒（NiV）制成。 在本发明的第二实施例中，扩散阻挡层由钛 - 氮化钨（TiW：N）制成。 除了防止焊料层的In与后反射体的Ag的混合之外，扩散层防止了暴露于空气中后反射器中的Ag反射特性的劣化。 在替代实施例中，扩散层由非导电材料制成。

    Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
    7.
    发明授权
    Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip 有权
    用于增加大功率LED芯片上可反射可焊接触点的镜面反射率的扩散屏障

    公开(公告)号：US06222207B1

    公开(公告)日：2001-04-24

    申请号：US09317647

    申请日：1999-05-24

    申请人： Carrie Carter-Coman ,  Gloria Hofler ,  Fred A. Kish, Jr.

    发明人： Carrie Carter-Coman ,  Gloria Hofler ,  Fred A. Kish, Jr.

    IPC分类号： H01L3300

    CPC分类号： H01L33/405

    摘要： A solderable light-emitting diode (LED) chip and a method of fabricating an LED lamp embodying the LED chip utilize a diffusion barrier that appreciably blocks molecular migration between two different layers of the LED chip during high temperature processes. In the preferred embodiment, the two different layers of the LED chip are a back reflector and a solder layer. The prevention of intermixing of the materials in the back reflector and the solder layer impedes degradation of the back reflector with respect to its ability to reflect light emitted by the LED. The LED chip includes a high power AlInGaP LED or other type of LED, a back reflector, a diffusion barrier and a solder layer. Preferably, the back reflector is composed of silver (Ag) or Ag alloy and the solder layer is made of indium (In), lead (Pb), gold (Au), tin (Sn), or their alloy and eutectics. In a first embodiment, the diffusion layer is made of nickel (Ni) or nickel-vanadium (NiV). In a second embodiment of the invention, the diffusion barrier is made of titanium-tungsten-nitride (TiW:N). In addition to preventing the intermixing of the In of the solder layer with the Ag of the back reflector, the diffusion layer prevents degradation of the Ag reflective properties in the back reflector upon exposure to air. In an alternative embodiment, the diffusion layer is made of a non-conductive material.

    摘要翻译： 可焊接的发光二极管（LED）芯片和制造实施LED芯片的LED灯的方法利用在高温过程中可以明显阻挡LED芯片的两个不同层之间的分子迁移的扩散阻挡层。 在优选实施例中，LED芯片的两个不同层是后反射器和焊料层。 防止背反射器和焊料层中的材料的混合相对于其反射由LED发射的光的能力而妨碍背反射器的劣化。 LED芯片包括高功率AlInGaP LED或其他类型的LED，后反射器，扩散阻挡层和焊料层。 优选地，背反射器由银（Ag）或Ag合金构成，并且焊料层由铟（In），铅（Pb），金（Au），锡（Sn）或其合金和共晶体制成。 在第一实施例中，扩散层由镍（Ni）或镍 - 钒（NiV）制成。 在本发明的第二实施例中，扩散阻挡层由钛 - 氮化钨（TiW：N）制成。 除了防止焊料层的In与后反射体的Ag的混合之外，扩散层防止了暴露于空气中后反射器中的Ag反射特性的劣化。 在替代实施例中，扩散层由非导电材料制成。

    Ordered interface texturing for a light emitting device
    9.
    发明授权
    Ordered interface texturing for a light emitting device 失效
    用于发光器件的有序接口纹理

    公开(公告)号：US5779924A

    公开(公告)日：1998-07-14

    申请号：US620518

    申请日：1996-03-22

    申请人： Michael R. Krames ,  Fred A. Kish, Jr.

    发明人： Michael R. Krames ,  Fred A. Kish, Jr.

    IPC分类号： H01L33/20 ,  H01L33/22 ,  B44C1/22

    CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/38

    摘要： This method relates to the fabrication of semiconductor light-emitting devices having at least one ordered textured interface. Controlled interface texturing with an ordered pattern is provided on any or all interfaces of such a device to enhance light extraction from these interfaces and thus improve the performance of the device. Ordered interface texturing offers an improvement in light extraction by increasing the transmission of total optical power from the device into the ambient. This improvement is possible because ordered interface texturing can provide: 1) a reduction in Fresnel losses at the interface between the device and the ambient and, 2) a change or increase in the angular bandwidth of light which may transmit power into the ambient. This latter effect may be thought of a change or increase in the escape cone at an interface. Both effects can result in an overall increase in total light extraction efficiency for the LED.

    摘要翻译： 该方法涉及具有至少一个有序纹理界面的半导体发光器件的制造。 在这种设备的任何或所有接口上提供具有有序模式的受控接口纹理，以增强从这些接口的光提取，从而提高设备的性能。 有序的界面纹理通过增加从设备到环境中的总光功率的传输来提供光提取的改进。 这种改进是可能的，因为有序的界面纹理可以提供：1）在设备和环境之间的接口处减少菲涅尔损耗，以及2）可以将功率传输到环境中的光的角度带宽的改变或增加。 后一种效应可以被认为在界面处的逃避锥的变化或增加。 这两种效应可以导致LED的总光提取效率的总体增加。