公开(公告)号：US06280523B1

公开(公告)日：2001-08-28

申请号：US09245448

申请日：1999-02-05

申请人： Carrie Carter Coman ,  Fred A. Kish, Jr. ,  R. Scott Kern ,  Michael R. Krames ,  Paul S. Martin

发明人： Carrie Carter Coman ,  Fred A. Kish, Jr. ,  R. Scott Kern ,  Michael R. Krames ,  Paul S. Martin

IPC分类号： C30B2512

CPC分类号： H01L33/465 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/105 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/1838 ,  H01S5/32341 ,  Y10S117/915

摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.

摘要翻译： 具有垂直光路的发光器件，例如 可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。 发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。 电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。 电触点被添加到发光器件中。

公开(公告)号：US06420199B1

公开(公告)日：2002-07-16

申请号：US09923711

申请日：2001-08-06

申请人： Carrie Carter Coman ,  R. Scott Kern ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Arto V. Nurmikko ,  Yoon-Kyu Song

发明人： Carrie Carter Coman ,  R. Scott Kern ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Arto V. Nurmikko ,  Yoon-Kyu Song

IPC分类号： H05L2120

CPC分类号： H01L33/105 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/465 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/1838 ,  H01S5/34333 ,  Y10S438/977

摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.

摘要翻译： 具有垂直光路的发光器件，例如 可以使用晶片接合或金属焊接技术来实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。 发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。 电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。 电触点被添加到发光器件中。

公开(公告)号：US06320206B1

公开(公告)日：2001-11-20

申请号：US09245435

申请日：1999-02-05

申请人： Carrie Carter Coman ,  R. Scott Kern ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Arto V. Nurmikko ,  Yoon-Kyu Song

发明人： Carrie Carter Coman ,  R. Scott Kern ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Arto V. Nurmikko ,  Yoon-Kyu Song

IPC分类号： H01L3300

CPC分类号： H01L33/105 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/465 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/1838 ,  H01S5/34333 ,  Y10S438/977

摘要： Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.

摘要翻译： 具有垂直光路的发光器件，例如 可以使用晶片接合或金属焊接技术实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。 发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。 电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。 电触点被添加到发光器件中。

公开(公告)号：US6046465A

公开(公告)日：2000-04-04

申请号：US62368

申请日：1998-04-17

申请人： Shih-Yuan Wang ,  Yong Chen ,  Scott W. Corzine ,  R. Scott Kern ,  Carrie C. Coman ,  Michael R. Krames ,  Frederick A. Kish, Jr. ,  Yawara Kaneko

发明人： Shih-Yuan Wang ,  Yong Chen ,  Scott W. Corzine ,  R. Scott Kern ,  Carrie C. Coman ,  Michael R. Krames ,  Frederick A. Kish, Jr. ,  Yawara Kaneko

IPC分类号： H01L33/10 ,  H01L33/12 ,  H01L33/24 ,  H01S5/00 ,  H01S5/02 ,  H01S5/14 ,  H01S5/183 ,  H01S5/187 ,  H01S5/323 ,  H01S5/343 ,  C30B19/00 ,  H01L33/00

CPC分类号： H01L33/24 ,  H01L33/10 ,  H01L33/12 ,  H01S5/18341 ,  H01S5/0205 ,  H01S5/0213 ,  H01S5/0425 ,  H01S5/18305 ,  H01S5/18369 ,  H01S5/32341

摘要： A buried reflector 50 in an epitaxial lateral growth layer forms a part of a light emitting device and allows for the fabrication of a semiconductor material that is substantially low in dislocation density. The laterally grown material is low in dislocation defect density where it is grown over the buried reflector making it suitable for high quality optical light emitting devices, and the embedded reflector eliminates the need for developing an additional reflector.

摘要翻译： 外延横向生长层中的掩埋反射体50形成发光器件的一部分，并允许制造基本上低的位错密度的半导体材料。 横向生长的材料的位错缺陷密度低，在掩埋反射器上生长，使其适用于高质量的光发射器件，并且嵌入式反射器消除了开发另外的反射器的需要。

公开(公告)号：US06914272B2

公开(公告)日：2005-07-05

申请号：US10721440

申请日：2003-11-24

申请人： Werner K. Goetz ,  Michael D. Camras ,  Changhua Chen ,  Gina L. Christenson ,  R. Scott Kern ,  Chihping Kuo ,  Paul Scott Martin ,  Daniel A. Steigerwald

发明人： Werner K. Goetz ,  Michael D. Camras ,  Changhua Chen ,  Gina L. Christenson ,  R. Scott Kern ,  Chihping Kuo ,  Paul Scott Martin ,  Daniel A. Steigerwald

IPC分类号： H01S5/30 ,  H01L33/32 ,  H01L33/40 ,  H01S5/042 ,  H01S5/323 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/32341 ,  H01L2924/00

摘要： P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ωcm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.

摘要翻译： GaN基发光器件的P型层优化用于形成与金属的欧姆接触。 在第一实施例中，在p型导电层和金属触点之间形成电阻率大于或等于约7Ωgm的p型GaN过渡层。 在第二实施例中，p型过渡层是任何III-V半导体。 在第三实施例中，p型过渡层是超晶格。 在第四实施例中，形成具有不同组成和不同浓度的掺杂剂的单一p型层。

公开(公告)号：US06635904B2

公开(公告)日：2003-10-21

申请号：US09823823

申请日：2001-03-29

申请人： Werner K. Goetz ,  Michael D. Camras ,  Nathan F. Gardner ,  R. Scott Kern ,  Andrew Y. Kim ,  Stephen A. Stockman

发明人： Werner K. Goetz ,  Michael D. Camras ,  Nathan F. Gardner ,  R. Scott Kern ,  Andrew Y. Kim ,  Stephen A. Stockman

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/06 ,  H01S5/0212 ,  H01S5/32341 ,  H01S5/3409

摘要： A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spacer layer which typically does not contain indium. The smoothing layer contains a composition of indium lower than the active region, and is typically deposited at a higher temperature than the active region. The spacer layer is typically deposited while reducing the temperature in the reactor from the smoothing layer deposition temperature to the active region deposition temperature. In other embodiments, a graded smoothing region is used to improve the surface characteristics. The smoothing region may have a graded composition, graded dopant concentration, or both.

公开(公告)号：US06489636B1

公开(公告)日：2002-12-03

申请号：US09823732

申请日：2001-03-29

申请人： Werner K. Goetz ,  Michael D. Camras ,  Nathan F. Gardner ,  R. Scott Kern ,  Andrew Y. Kim ,  Stephen A. Stockman

发明人： Werner K. Goetz ,  Michael D. Camras ,  Nathan F. Gardner ,  R. Scott Kern ,  Andrew Y. Kim ,  Stephen A. Stockman

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/02 ,  H01L33/06 ,  H01S5/0212 ,  H01S5/32341 ,  H01S5/3409

摘要： A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single layer, separated from the active region by a spacer layer which typically does not contain indium. The smoothing layer contains a composition of indium lower than the active region, and is typically deposited at a higher temperature than the active region. The spacer layer is typically deposited while reducing the temperature in the reactor from the smoothing layer deposition temperature to the active region deposition temperature. In other embodiments, a graded smoothing region is used to improve the surface characteristics. The smoothing region may have a graded composition, graded dopant concentration, or both.

公开(公告)号：US06657300B2

公开(公告)日：2003-12-02

申请号：US09755935

申请日：2001-01-05

申请人： Werner K. Goetz ,  Michael D. Camras ,  Changhua Chen ,  Gina L. Christenson ,  R. Scott Kern ,  Chihping Kuo ,  Paul Scott Martin ,  Daniel A. Steigerwald

发明人： Werner K. Goetz ,  Michael D. Camras ,  Changhua Chen ,  Gina L. Christenson ,  R. Scott Kern ,  Chihping Kuo ,  Paul Scott Martin ,  Daniel A. Steigerwald

IPC分类号： H01L2348

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L2924/0002 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/32341 ,  H01L2924/00

摘要： P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 &OHgr;cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed.

摘要翻译： GaN基发光器件的P型层优化用于形成与金属的欧姆接触。 在第一实施例中，在p型导电层和金属触点之间形成电阻率大于或等于约7Ωgm的p型GaN过渡层。 在第二实施例中，p型过渡层是任何III-V半导体。 在第三实施例中，p型过渡层是超晶格。 在第四实施例中，形成具有不同组成和不同浓度的掺杂剂的单一p型层。

公开(公告)号：US06500257B1

公开(公告)日：2002-12-31

申请号：US09062028

申请日：1998-04-17

申请人： Shih-Yuan Wang ,  Changhua Chen ,  Yong Chen ,  Scott W. Corzine ,  R. Scott Kern ,  Richard P. Schneider, Jr.

发明人： Shih-Yuan Wang ,  Changhua Chen ,  Yong Chen ,  Scott W. Corzine ,  R. Scott Kern ,  Richard P. Schneider, Jr.

IPC分类号： C30B2300

CPC分类号： H01L21/02647 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02642

摘要： An epitaxial material grown laterally in a trench allows for the fabrication of a trench-based semiconductor material that is substantially low in dislocation density. Initiating the growth from a sidewall of a trench minimizes the density of dislocations present in the lattice growth template, which minimizes the dislocation density in the regrown material. Also, by allowing the regrowth to fill and overflow the trench, the low dislocation density material can cover the entire surface of the substrate upon which the low dislocation density material is grown. Furthermore, with successive iterations of the trench growth procedure, higher quality material can be obtained. Devices that require a stable, high quality epitaxial material can then be fabricated from the low dislocation density material.

摘要翻译： 在沟槽中横向生长的外延材料允许制造基本上低的位错密度的基于沟槽的半导体材料。 从沟槽的侧壁开始生长使晶格生长模板中存在的位错的密度最小化，这使再生材料中的位错密度最小化。 此外，通过允许再生长填充和溢出沟槽，低位错密度材料可以覆盖生长低位错密度材料的基底的整个表面。 此外，随着沟槽生长过程的连续迭代，可以获得更高质量的材料。 然后可以从低位错密度材料制造需要稳定的高质量外延材料的器件。

公开(公告)号：US06441393B2

公开(公告)日：2002-08-27

申请号：US09442590

申请日：1999-11-17

申请人： Werner Goetz ,  R. Scott Kern

发明人： Werner Goetz ,  R. Scott Kern

IPC分类号： H01L2976

CPC分类号： H01L33/325 ,  H01L33/04 ,  H01L33/12 ,  H01S5/305 ,  H01S5/32341

摘要： A semiconductor device is provided having n-type device layers of III-V nitride having donor dopants such as germanium (Ge), silicon (Si), tin (Sn), and/or oxygen (O) and/or p-type device layers of III-V nitride having acceptor dopants such as magnesium (Mg), beryllium (Be), zinc (Zn), and/or cadmium (Cd), either simultaneously or in a doping superlattice, to engineer strain, improve conductivity, and provide longer wavelength light emission.

摘要翻译： 提供一种半导体器件，其具有具有诸如锗（Ge），硅（Si），锡（Sn）和/或氧（O）和/或p型器件的施主掺杂剂的III-V族氮化物的n型器件层 同时或在掺杂超晶格中的具有受体掺杂剂如镁（Mg），铍（Be），锌（Zn）和/或镉（Cd）的III-V族氮化物层可以工程化应变，改善导电性，以及 提供更长的波长发光。