公开(公告)号：US20090272191A1

公开(公告)日：2009-11-05

申请号：US11921635

申请日：2006-05-30

Applicant: Humphery J Maris ,  Arto V. Nurmikko

Inventor： Humphery J Maris ,  Arto V. Nurmikko

IPC: G01N29/04

CPC classification number: A61B8/00 ,  A61B5/0097 ,  G01N29/0681 ,  G01N29/221 ,  G01N29/2418 ,  G01N2291/02827 ,  G01N2291/02854 ,  G01N2291/0423 ,  G01N2291/0427 ,  G01S15/8965

Abstract: One aspect of the present invention concerns scanning acoustic microscopes in which sound waves used for imaging purposes are generated by an opto-acoustical process. A scanning acoustic microscope of the present invention includes an opto-acoustic transducer assembly having a substrate. Formed on or in the substrate of the opto-acoustic transducer assembly is a layer of opto-acoustic material. When pulsed light waves impinge the layer of opto-acoustic material, pulsed sound waves are created. An acoustic lens also formed in the substrate focuses the pulsed sound waves which are then used to probe the physical and mechanical properties of a sample object. Pulsed sound waves reflecting off the sample object return to the opto-acoustic transducer where the pulsed sound waves impinge the layer of opto-acoustic material. The impinging sound waves change at least one optical property of the layer of opto-acoustic material. This change, which is dependent on changes to the pulsed sound waves caused by the interaction of the pulsed sound waves and the sample object, is then sensed using pulsed light waves. In one possible embodiment of the present invention, the layer of opto-acoustic material is deposited on the substrate in a plurality of non-contiguous concentric rings. The plurality of non-contiguous concentric rings operates as an acoustic analogue of a Fresnel lens.

Abstract translation: 本发明的一个方面涉及扫描声学显微镜，其中用于成像目的的声波通过光学声学过程产生。 本发明的扫描型声学显微镜包括具有基板的光声换能器组件。 形成在光声换能器组件的基底上或其中的光声材料层。 当脉冲光波冲击光声材料层时，产生脉冲声波。 也形成在基板中的声透镜聚焦脉冲声波，然后将其用于探测样品物体的物理和机械特性。 反射离开样品物体的脉冲声波返回到光声换能器，其中脉冲声波撞击光声材料层。 入射的声波改变光声材料层的至少一个光学特性。 然后使用脉冲光波来检测由脉冲声波和样本物体的相互作用引起的对脉冲声波的变化的这种变化。 在本发明的一个可能实施例中，光声材料层在多个不连续的同心环中沉积在基底上。 多个不连续的同心环作为菲涅尔透镜的声学类似物操作。

公开(公告)号：US06420199B1

公开(公告)日：2002-07-16

申请号：US09923711

申请日：2001-08-06

Applicant: Carrie Carter Coman ,  R. Scott Kern ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Arto V. Nurmikko ,  Yoon-Kyu Song

Inventor： Carrie Carter Coman ,  R. Scott Kern ,  Fred A. Kish, Jr. ,  Michael R Krames ,  Arto V. Nurmikko ,  Yoon-Kyu Song

IPC: H05L2120

CPC classification number: H01L33/105 ,  B82Y20/00 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/465 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/18341 ,  H01S5/18361 ,  H01S5/1838 ,  H01S5/34333 ,  Y10S438/977

Abstract: Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.

Abstract translation: 具有垂直光路的发光器件，例如 可以使用晶片接合或金属焊接技术来实现具有高质量反射镜的垂直腔表面发射激光器或谐振腔发光或检测装置。 发光区域包含一个或两个包含介质分布布拉格反射器（DBR）的反射器堆叠。 电介质DBR可以沉积或附着到发光器件。 GaP，GaAs，InP或Si的主衬底连接到电介质DBR之一。 电触点被添加到发光器件中。

公开(公告)号：US06233267B1

公开(公告)日：2001-05-15

申请号：US09233006

申请日：1999-01-19

Applicant: Arto V Nurmikko ,  Yoon-Kyu Song

Inventor： Arto V Nurmikko ,  Yoon-Kyu Song

IPC: H01S500

CPC classification number: B82Y20/00 ,  H01S5/18308 ,  H01S5/18341 ,  H01S5/18369 ,  H01S5/2214 ,  H01S5/34333 ,  H01S2304/12

Abstract: A vertical cavity, surface emitting laser (VCSEL) device (10, 10′) has a substrate (12) and, disposed over a surface of the substrate, a Group III nitride buffer layer (14) and a mesa structure containing at least a portion of an n-type Group III nitride layer (16). The VCSEL device and mesa structure further include a first multilayer dielectric mirror stack (18a), that is embedded within the first Group III nitride layer by the use of a lateral edge overgrowth (LEO) process; a p-type Group III nitride layer (26); and a p-n junction between the n-type Group III nitride layer and the p-type Group III nitride layer. The p-n junction contains an active multiquantum well region (24). Also contained in the mesa structure is a dielectric (silicon dioxide) layer (20) having a current constricting aperture (20a). The dielectric layer and aperture are buried within one of the n-type Group III nitride layer or the p-type Group III nitride layer, also by the use of the LEO process. A second multilayer dielectric mirror stack (18b) is disposed on top of the mesa structure and over the p-type Group III nitride layer. The first and second multilayer dielectric mirror stacks define a resonant optical cavity structure that passes through the aperture, and that supports an emission of less than 500 nm in the blue/green or NUV spectral regions.

Abstract translation: 垂直腔表面发射激光器（VCSEL）装置（10,10'）具有衬底（12），并且设置在衬底的表面上，具有第III族氮化物缓冲层（14）和包含至少 部分为n型III族氮化物层（16）。 VCSEL器件和台面结构还包括通过使用横向边缘过度生长（LEO）工艺嵌入在第一III族氮化物层内的第一多层介电镜叠层（18a）; p型III族氮化物层（26）; 以及n型III族氮化物层和p型III族氮化物层之间的p-n结。 p-n结包含活性多量子阱区（24）。 也包含在台面结构中的是具有电流收缩孔（20a）的电介质（二氧化硅）层（20）。 电介质层和孔径也被埋在n型III族氮化物层或p型III族氮化物层之一内，也通过使用LEO工艺。 第二多层介质镜叠层（18b）设置在台面结构的顶部和p型III族氮化物层上方。 第一和第二多层介质镜叠层限定了通过孔的共振光学腔结构，并支持在蓝/绿或NUV光谱区中小于500nm的发射。

公开(公告)号：US07551657B2

公开(公告)日：2009-06-23

申请号：US12288173

申请日：2008-10-16

Applicant: Arto V Nurmikko

Inventor： Arto V Nurmikko

IPC: H01S3/30 ,  H01S3/00

CPC classification number: G01R33/093 ,  B82Y25/00 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/0607 ,  H01S5/183

Abstract: A Magneto-Optoelectronic Device MOD (10) includes a magnetic sensing device (12), such as a magnetoresistive device or a magnetic tunnel junction device, that is combined with a semiconductor light emitter (14), such as a LED or a laser diode, to create a compact integrated device where changes in an ambient magnetic field are expressed as changes in an optical beam intensity emanating from the MOD. Using the MOD (10) the magnetic field related information can be transmitted by a light wave over very large distances through some medium (34), for example, through free space and/or through an optical fiber.

Abstract translation: 磁光电装置MOD（10）包括与诸如LED或激光二极管的半导体光发射器（14）组合的诸如磁阻器件或磁隧道结装置的磁感测装置（12） ，以创建紧凑的集成装置，其中环境磁场的变化表示为从MOD发出的光束强度的变化。 使用MOD（10），可以通过例如通过自由空间和/或通过光纤的某些介质（34）通过非常大的距离的光波来传输磁场相关信息。

公开(公告)号：US07440479B2

公开(公告)日：2008-10-21

申请号：US10488570

申请日：2002-09-05

Applicant: Arto V Nurmikko

Inventor： Arto V Nurmikko

IPC: H01S3/30 ,  H01S3/00

CPC classification number: G01R33/093 ,  B82Y25/00 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/0607 ,  H01S5/183

Abstract: A Magneto-Optoelectronic Device MOD (10) includes a magnetic sensing device (12), such as a magnetoresistive device or a magnetic tunnel junction device, that is combined with a semiconductor light emitter (14), such as a LED or a laser diode, to create a compact integrated device where changes in an ambient magnetic field are expressed as changes in an optical beam intensity emanating from the MOD. Using the MOD (10) the magnetic field related information can be transmitted by a light wave over very large distances through some medium (34), for example, through free space and/or through an optical fiber.

Abstract translation: 磁光电装置MOD（10）包括与诸如LED或激光二极管的半导体光发射器（14）组合的诸如磁阻器件或磁隧道结装置的磁感测装置（12） ，以创建紧凑的集成装置，其中环境磁场的变化表示为从MOD发出的光束强度的变化。 使用MOD（10），可以通过例如通过自由空间和/或通过光纤的某些介质（34）通过非常大的距离的光波来传输磁场相关信息。

公开(公告)号：US5610413A

公开(公告)日：1997-03-11

申请号：US484088

申请日：1995-06-07

Applicant: Yongping Fan ,  Jung Han ,  Arto V. Nurmikko ,  Robert L. Gunshor ,  Li He

Inventor： Yongping Fan ,  Jung Han ,  Arto V. Nurmikko ,  Robert L. Gunshor ,  Li He

IPC: H01L21/36 ,  H01L21/44 ,  H01L27/15 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01L33/26 ,  H01L33/28 ,  H01L33/40 ,  H01S5/042 ,  H01S5/223 ,  H01S5/347 ,  H01L33/00

CPC classification number: H01S5/347 ,  B82Y20/00 ,  H01L21/02395 ,  H01L21/024 ,  H01L21/02417 ,  H01L21/02469 ,  H01L21/02485 ,  H01L21/0251 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/44 ,  H01L33/06 ,  H01L33/08 ,  H01L33/14 ,  H01S5/0421 ,  H01L27/156 ,  H01L33/26 ,  H01L33/28 ,  H01L33/40 ,  H01S5/2231

Abstract: Group II-VI compound semiconductor light emitting devices which include at least one II-VI quantum well region of a well layer disposed between first and second barrier layers is disclosed. The quantum well region is sandwiched between first and second cladding layers of a II-VI semiconductor material. The first cladding layer is formed on and lattice matched to the first barrier layer and to a substrate of a III-V compound semiconductor material. The second cladding layer is lattice matched to the second barrier layer. The quantum well layer comprises a II-VI compound semiconductor material having the formula A.sub.x B.sub.(1-x) C wherein A and B are two different elements from Group II and C is at least one element from Group VI. When the second cladding layer has a p-type conductivity, a graded bandgap ohmic contact according to the present invention can be utilized. The graded bandgap contact can be a single continuously graded II-VI p-type region or a plurality of cells with each of the cells having first and second thin layers of first and second p-type II-VI semiconductor materials respectively. Another embodiment of the present invention discloses a monolithic multicolor light emitting element capable of emitting four colors and a method for fabricating same. The monolithic multicolor element includes four II-VI semiconductor light emitting devices formed on a single III-V substrate.

Abstract translation: 公开了包括设置在第一和第二阻挡层之间的阱层的至少一个II-VI量子阱区的II-VI族化合物半导体发光器件。 量子阱区夹在II-VI半导体材料的第一和第二覆层之间。 第一包层与第一阻挡层和III-V族化合物半导体材料的衬底形成并晶格匹配。 第二包层与第二阻挡层晶格匹配。 量子阱层包括具有式AxB（1-x）C的II-VI化合物半导体材料，其中A和B是来自组II的两个不同元素，C是来自第VI族的至少一种元素。 当第二包覆层具有p型导电性时，可以使用根据本发明的渐变带隙欧姆接触。 分级带隙接触可以是单个连续分级的II-VI p型区域或多个单元，其中每个单元分别具有第一和第二p型II-VI半导体材料的第一和第二薄层。 本发明的另一实施例公开了能够发射四种颜色的单片多色发光元件及其制造方法。 单片多色元件包括形成在单个III-V衬底上的四个II-VI半导体发光器件。

公开(公告)号：US08302480B2

公开(公告)日：2012-11-06

申请号：US12449415

申请日：2008-02-05

Applicant: Humphrey J. Maris ,  Arto V. Nurmikko

Inventor： Humphrey J. Maris ,  Arto V. Nurmikko

IPC: G01N29/06

CPC classification number: G01N29/0681 ,  G01N29/2418 ,  G01S15/8965 ,  G10K15/046

Abstract: An optical-acoustic transducer structure includes at least one metal or semiconducting film in which a part of a pump light pulse is absorbed to generate a sound pulse; and at least one dielectric film. The thicknesses and optical properties of the at least one metal or semiconducting film and the at least one dielectric film are selected so that a returning sound pulse results in a measurable change in the optical reflectivity and/or some other optical characteristic of the transducer structure. The transducer structure includes a resonant cavity, and an output surface that is shaped so as to provide no significant focusing of generated sound waves when the sound waves are launched towards a surface of the sample.

Abstract translation: 光声换能器结构包括至少一个金属或半导体膜，其中泵浦光脉冲的一部分被吸收以产生声脉冲; 和至少一个电介质膜。 选择至少一种金属或半导体膜和至少一种电介质膜的厚度和光学性质，使得返回的声脉冲导致换能器结构的光学反射率和/或某些其他光学特性的可测量的变化。 换能器结构包括谐振腔和输出表面，其被形成为当声波朝向样品的表面发射时不产生所产生的声波的显着聚焦。

公开(公告)号：US07064827B2

公开(公告)日：2006-06-20

申请号：US10442795

申请日：2003-05-20

Applicant: Arto V. Nurmikko ,  Richard K. Chang

Inventor： Arto V. Nurmikko ,  Richard K. Chang

IPC: G01N21/00 ,  G01J3/30

CPC classification number: G01N15/1456 ,  G01N2015/1493

Abstract: A particle detector has a chamber defining a pathway that a target particle follows between an entry and an exit point, a solid-state energy source such as an LED, and a re-emission sensor. The energy source imparts energy to the particle between the two points, and the sensor includes an arcuate or multi-planar lens to focus energy re-emitted by the particle. The particle is identifiable by its re-emitted energy spectrum. A scanner re-directs the beam from a single energy source to track the particle between the entry and exit points. Alternatively, the energy source is a plurality of source elements that each scan the particle at a single position. Another embodiment is a chipscale detector system wherein energy source elements are disposed on a source layer, sensor elements are disposed on a sensor layer, and one or more target particles to be detected are retained on a capture layer disposed therebetween.

Abstract translation: 粒子检测器具有限定目标粒子在入口和出口点之间的路径，固体能量源（例如LED）和再发射传感器的腔室。 能量源向两点之间的颗粒施加能量，并且传感器包括用于聚焦由颗粒再发射的能量的弧形或多平面透镜。 颗粒可以通过其再发射的能谱来识别。 扫描仪重新引导来自单个能量源的光束以跟踪进入点和出口点之间的粒子。 或者，能量源是多个源元素，每个元素在单个位置扫描粒子。 另一个实施例是一种芯片尺寸检测器系统，其中能量源元件设置在源层上，传感器元件设置在传感器层上，并且待检测的一个或多个目标颗粒被保持在设置在其之间的捕获层上。

公开(公告)号：US06822991B2

公开(公告)日：2004-11-23

申请号：US10261534

申请日：2002-09-30

Applicant: William D. Collins, III ,  Nathan F. Gardner ,  Arto V. Nurmikko

Inventor： William D. Collins, III ,  Nathan F. Gardner ,  Arto V. Nurmikko

IPC: H01S500

CPC classification number: H01L33/04 ,  H01L27/15 ,  H01L33/0016 ,  H01L33/08 ,  H01L33/10 ,  H01L33/46 ,  H01S5/0224 ,  H01S5/02288 ,  H01S5/18341 ,  H01S5/3095

Abstract: A light emitting device includes a first active region, a second active region, and a tunnel junction. The tunnel junction includes a layer of first conductivity type and a layer of second conductivity type, both thinner than a layer of first conductivity type and a layer of second conductivity type surrounding the first active region. The tunnel junction permits vertical stacking of the active regions, which may increase the light generated by a device without increasing the size of the source.

Abstract translation: 发光器件包括第一有源区，第二有源区和隧道结。 隧道结包括第一导电类型的层和比第一导电类型的层薄的第二导电类型的层和围绕第一有源区的第二导电类型的层。 隧道结允许有源区域的垂直堆叠，这可以增加由器件产生的光而不增加源的尺寸。

公开(公告)号：US20170042713A1

公开(公告)日：2017-02-16

申请号：US15304382

申请日：2015-04-13

Applicant: Arto V. NURMIKKO ,  David Christopher HEELAN ,  David Allenson BORTON ,  Jacob KOMAR ,  David ROSLER ,  John D. SIMERAL ,  Brown University

Inventor： Arto V. NURMIKKO ,  Christopher David HEELAN ,  David Allenson BORTON ,  Jacob KOMAR ,  David ROSLER ,  John D. SIMERAL

IPC: A61F4/00 ,  A61B5/0205 ,  A61B5/03 ,  A61B5/04 ,  A61B5/11 ,  A61B5/145 ,  A61B5/00 ,  A61N1/36 ,  A61B5/0482 ,  A61F2/14 ,  A61M5/172 ,  A61F2/04 ,  A61N1/39 ,  A61F2/26 ,  A61F2/44 ,  G06F3/01 ,  A61B5/0404 ,  G06F19/00 ,  A61B5/16

CPC classification number: A61F4/00 ,  A61B5/0006 ,  A61B5/002 ,  A61B5/0022 ,  A61B5/0024 ,  A61B5/02055 ,  A61B5/02438 ,  A61B5/031 ,  A61B5/04012 ,  A61B5/0404 ,  A61B5/0482 ,  A61B5/0533 ,  A61B5/08 ,  A61B5/1113 ,  A61B5/145 ,  A61B5/165 ,  A61B5/4851 ,  A61B5/6802 ,  A61B2560/0252 ,  A61B2562/0204 ,  A61F2/04 ,  A61F2/14 ,  A61F2/26 ,  A61F2/44 ,  A61M5/1723 ,  A61N1/36 ,  A61N1/39 ,  G06F3/015 ,  G06F19/3418 ,  G16H40/63

Abstract: A portable monitoring device for whole-body monitoring can include a receiver configured to receive wireless signals representing real-time neural activity from a neural sensor and to process the wireless signals into digital signals. The portable monitoring device can also include a first processor coupled to the receiver configured to receive the digital signals from the receiver and a programmable processor coupled to the first processor. The programmable processor can be configured to process the digital signals and generate a mapping of the neural activity into a person's behavior, a person's mood, a person's health condition, a person's memory, or a person's intentions.

Abstract translation: 用于全身监测的便携式监视装置可以包括被配置为从神经传感器接收表示实时神经活动的无线信号并将无线信号处理成数字信号的接收器。 便携式监视设备还可以包括耦合到接收器的第一处理器，其被配置为从接收器接收数字信号，以及耦合到第一处理器的可编程处理器。 可编程处理器可以被配置为处理数字信号并且产生神经活动对人的行为，人的情绪，人​​的健康状况，人的记忆或人的意图的映射。