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    Planar inorganic device
    4.
    发明授权
    Planar inorganic device 有权
    平面无机装置

    公开(公告)号：US07232650B2

    公开(公告)日：2007-06-19

    申请号：US10263131

    申请日：2002-10-02

    申请人： Catherine A. Leatherdale ,  Craig R. Schardt ,  D. Scott Thompson ,  Wendy L. Thompson

    发明人： Catherine A. Leatherdale ,  Craig R. Schardt ,  D. Scott Thompson ,  Wendy L. Thompson

    IPC分类号： G03F7/30 ,  G03F7/027

    CPC分类号： G03F7/038 ,  G02B6/1221 ,  G02B6/138 ,  G03F7/0047 ,  G03F7/027 ,  G03F7/0757

    摘要： A method for making an inorganic structure including: (a) applying a photoreactive composition to a substrate, wherein the composition includes: a reactive species, a photoinitiator system, and a plurality of substantially inorganic colloidal particles, wherein the particles have an average particle size of less than about 300 nm; (b) photopatterning the composition to define a structure; and (c) subjecting the structure to elevated temperature for a time sufficient to pyrolyze the reactive species and to at least partially fuse the particles.

    摘要翻译： 一种制备无机结构的方法，包括：（a）将光反应性组合物施用于基材，其中所述组合物包括：反应性物质，光引发剂体系和多种基本上无机的胶体颗粒，其中所述颗粒具有平均粒度 小于约300nm; （b）对组合物进行光图案化以限定结构; 和（c）使结构经历升高的温度足以使反应性物质热解并至少部分地熔化颗粒的时间。

    Non-radiatively pumped wavelength converter
    5.
    发明授权
    Non-radiatively pumped wavelength converter 有权
    非辐射泵浦波长转换器

    公开(公告)号：US08455904B2

    公开(公告)日：2013-06-04

    申请号：US13264833

    申请日：2010-04-19

    申请人： Craig R. Schardt ,  Catherine A. Leatherdale

    发明人： Craig R. Schardt ,  Catherine A. Leatherdale

    IPC分类号： H01L33/00

    CPC分类号： H01L27/156 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/502 ,  H01L2933/0083

    摘要： A light source has an active layer (204) disposed between a first doped semiconductor layer (206) and a second doped semiconductor layer (208). The active layer has energy levels associated with light of a first wavelength. Light emitting elements (216) are positioned on the surface of the first doped semiconductor layer (206) for non-radiative excitation by the active layer. The light emitting elements are capable of emitting light at a second wavelength different from the first wavelength. In some embodiments a grid electrode (213) is disposed on the first doped semiconductor layer and defines open regions (214) of a surface of the first doped layer, the first plurality of light emitting elements being positioned in the open regions. In some embodiments a second plurality of light emitting elements is disposed over the first plurality of light emitting elements for non-radiative excitation by at least some of the first plurality of light emitting elements.

    摘要翻译： 光源具有设置在第一掺杂半导体层（206）和第二掺杂半导体层（208）之间的有源层（204）。 有源层具有与第一波长的光相关联的能级。 发光元件（216）位于第一掺杂半导体层（206）的表面上，用于由有源层进行非辐射激励。 发光元件能够以不同于第一波长的第二波长发光。 在一些实施例中，栅电极（213）设置在第一掺杂半导体层上，并且限定第一掺杂层的表面的开放区域（214），第一多个发光元件位于开放区域中。 在一些实施例中，第二多个发光元件设置在第一多个发光元件上，用于通过至少一些第一多个发光元件进行非辐射激励。

    NON-RADIATIVELY PUMPED WAVELENGTH CONVERTER
    6.
    发明申请
    NON-RADIATIVELY PUMPED WAVELENGTH CONVERTER 有权
    非反射式泵浦波长转换器

    公开(公告)号：US20120037885A1

    公开(公告)日：2012-02-16

    申请号：US13264833

    申请日：2010-04-19

    申请人： Craig R. Schardt ,  Catherine A. Leatherdale

    发明人： Craig R. Schardt ,  Catherine A. Leatherdale

    IPC分类号： H01L33/04

    CPC分类号： H01L27/156 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/502 ,  H01L2933/0083

    摘要： A light source has an active layer (204) disposed between a first doped semiconductor layer (206) and a second doped semiconductor layer (208). The active layer has energy levels associated with light of a first wavelength. Light emitting elements (216) are positioned on the surface of the first doped semiconductor layer (206) for non-radiative excitation by the active layer. The light emitting elements are capable of emitting light at a second wavelength different from the first wavelength. In some embodiments a grid electrode (213) is disposed on the first doped semiconductor layer and defines open regions (214) of a surface of the first doped layer, the first plurality of light emitting elements being positioned in the open regions. In some embodiments a second plurality of light emitting elements is disposed over the first plurality of light emitting elements for non-radiative excitation by at least some of the first plurality of light emitting elements.

    摘要翻译： 光源具有设置在第一掺杂半导体层（206）和第二掺杂半导体层（208）之间的有源层（204）。 有源层具有与第一波长的光相关联的能级。 发光元件（216）位于第一掺杂半导体层（206）的表面上，用于由有源层进行非辐射激励。 发光元件能够以不同于第一波长的第二波长发光。 在一些实施例中，栅电极（213）设置在第一掺杂半导体层上，并且限定第一掺杂层的表面的开放区域（214），第一多个发光元件位于开放区域中。 在一些实施例中，第二多个发光元件设置在第一多个发光元件上，用于通过至少一些第一多个发光元件进行非辐射激励。

    NON-RADIATIVELY PUMPED WAVELENGTH CONVERTER
    7.
    发明申请
    NON-RADIATIVELY PUMPED WAVELENGTH CONVERTER 有权
    非反射式泵浦波长转换器

    公开(公告)号：US20120032142A1

    公开(公告)日：2012-02-09

    申请号：US13264817

    申请日：2010-04-19

    申请人： Catherine A. Leatherdale ,  Craig R. Schardt

    发明人： Catherine A. Leatherdale ,  Craig R. Schardt

    IPC分类号： H01L33/50 ,  B82Y15/00

    CPC分类号： H01L27/156 ,  H01L33/502

    摘要： A light source comprises an electroluminescent device that generates pump light and a wavelength converter that includes an absorbing element for absorbing at least some of the pump light. A first layer of light emitting elements is positioned proximate the absorbing element for non-radiative transfer of energy from the absorbing element to the light emitting elements. At least some of the light emitting elements are capable of emitting light having a wavelength longer than the wavelength of the pump light. In some embodiments the electroluminescent device is a light emitting diode (LED) that has a doped semiconductor layer positioned between the LED's active layer and the light emitting elements. The first doped semiconductor layer may have a thickness in excess of 20 nm. A second layer of light emitting elements may be positioned for non-radiative energy transfer from the first layer of light emitting elements.

    摘要翻译： 光源包括产生泵浦光的电致发光器件和包括用于吸收至少一些泵浦光的吸收元件的波长转换器。 第一层发光元件位于吸收元件附近，用于将能量从吸收元件非辐射传递到发光元件。 至少一些发光元件能够发射波长比泵浦光的波长长的光。 在一些实施例中，电致发光器件是发光二极管（LED），其具有位于LED有源层和发光元件之间的掺杂半导体层。 第一掺杂半导体层可以具有超过20nm的厚度。 可以定位第二层发光元件用于从第一层发光元件的非辐射能量传递。

    Non-radiatively pumped wavelength converter
    9.
    发明授权
    Non-radiatively pumped wavelength converter 有权
    非辐射泵浦波长转换器

    公开(公告)号：US08455903B2

    公开(公告)日：2013-06-04

    申请号：US13264817

    申请日：2010-04-19

    申请人： Catherine A. Leatherdale ,  Craig R. Schardt

    发明人： Catherine A. Leatherdale ,  Craig R. Schardt

    IPC分类号： H01L33/00

    CPC分类号： H01L27/156 ,  H01L33/502

    摘要： A light source comprises an electroluminescent device that generates pump light and a wavelength converter that includes an absorbing element for absorbing at least some of the pump light. A first layer of light emitting elements is positioned proximate the absorbing element for non-radiative transfer of energy from the absorbing element to the light emitting elements. At least some of the light emitting elements are capable of emitting light having a wavelength longer than the wavelength of the pump light. In some embodiments the electroluminescent device is a light emitting diode (LED) that has a doped semiconductor layer positioned between the LED's active layer and the light emitting elements. The first doped semiconductor layer may have a thickness in excess of 20 nm. A second layer of light emitting elements may be positioned for non-radiative energy transfer from the first layer of light emitting elements.

    摘要翻译： 光源包括产生泵浦光的电致发光器件和包括用于吸收至少一些泵浦光的吸收元件的波长转换器。 第一层发光元件位于吸收元件附近，用于将能量从吸收元件非辐射传递到发光元件。 至少一些发光元件能够发射波长比泵浦光的波长长的光。 在一些实施例中，电致发光器件是发光二极管（LED），其具有位于LED有源层和发光元件之间的掺杂半导体层。 第一掺杂半导体层可以具有超过20nm的厚度。 可以定位第二层发光元件用于从第一层发光元件的非辐射能量传递。