摘要:
A backlight that includes a front reflector and a back reflector that form a hollow light recycling cavity including an output surface is disclosed. The backlight further includes one or more light sources disposed to emit light into the light recycling cavity. The front reflector includes an on-axis average reflectivity of at least 90% for visible light polarized in a first plane, and an on-axis average reflectivity of at least 25% but less than 90% for visible light polarized in a second plane perpendicular to the first plane.
摘要:
A three-dimensional shaped structure is prepared from a multi-photon reactive composition including: (a) at least one reactive species; (b) a multi-photon photoinitiator system; and (c) a plurality of substantially inorganic particles, wherein the particles have an average particle size of less than about 10 microns in diameter.
摘要:
Ceramics comprising (i) at least one of Nb2O5 or Ta2O5 and (ii) at least two of (a) Al2O3, (b) Y2O3, or (c) at least one of ZrO2 or HfO2. Embodiments of ceramics according to the present invention can be made, formed as, or converted into optical waveguides, glass beads, articles (e.g., plates), fibers, particles (e.g., abrasive particles), and thin coatings.
摘要翻译:陶瓷,其包含(i)Nb 2 O 5 O 5或Ta 2 O 5 5中的至少一种和(ii) (a)Al 2 O 3 3,(b)Y 2 O 3 3中的至少两个或(a) c)ZrO 2 2或HfO 2 2中的至少一种。 根据本发明的陶瓷的实施例可以由玻璃珠,制品(例如板),纤维,颗粒(例如磨料颗粒)和薄涂层制成或形成光波导。
摘要:
A light source has an active layer (204) disposed between a first doped semiconductor layer (206) and a second doped semiconductor layer (208). The active layer has energy levels associated with light of a first wavelength. Light emitting elements (216) are positioned on the surface of the first doped semiconductor layer (206) for non-radiative excitation by the active layer. The light emitting elements are capable of emitting light at a second wavelength different from the first wavelength. In some embodiments a grid electrode (213) is disposed on the first doped semiconductor layer and defines open regions (214) of a surface of the first doped layer, the first plurality of light emitting elements being positioned in the open regions. In some embodiments a second plurality of light emitting elements is disposed over the first plurality of light emitting elements for non-radiative excitation by at least some of the first plurality of light emitting elements.
摘要:
Projection subsystems are described. More, particularly, projection subsystems that include a light source and a polarizing beam splitter are described. The polarizing beam splitters of the presently described projection subsystems are capable of avoiding performance degradation even after exposure to large doses of incident light.
摘要:
A light source has an active layer (204) disposed between a first doped semiconductor layer (206) and a second doped semiconductor layer (208). The active layer has energy levels associated with light of a first wavelength. Light emitting elements (216) are positioned on the surface of the first doped semiconductor layer (206) for non-radiative excitation by the active layer. The light emitting elements are capable of emitting light at a second wavelength different from the first wavelength. In some embodiments a grid electrode (213) is disposed on the first doped semiconductor layer and defines open regions (214) of a surface of the first doped layer, the first plurality of light emitting elements being positioned in the open regions. In some embodiments a second plurality of light emitting elements is disposed over the first plurality of light emitting elements for non-radiative excitation by at least some of the first plurality of light emitting elements.
摘要:
A light source comprises an electroluminescent device that generates pump light and a wavelength converter that includes an absorbing element for absorbing at least some of the pump light. A first layer of light emitting elements is positioned proximate the absorbing element for non-radiative transfer of energy from the absorbing element to the light emitting elements. At least some of the light emitting elements are capable of emitting light having a wavelength longer than the wavelength of the pump light. In some embodiments the electroluminescent device is a light emitting diode (LED) that has a doped semiconductor layer positioned between the LED's active layer and the light emitting elements. The first doped semiconductor layer may have a thickness in excess of 20 nm. A second layer of light emitting elements may be positioned for non-radiative energy transfer from the first layer of light emitting elements.
摘要:
Direct-lit backlights and associated methods and components are disclosed in which a transflector that partially transmits and partially reflects incident light is shaped to form at least one concave structure facing a back reflector of the backlight. This provides at least one recycling cavity therebetween, the at least one recycling cavity substantially filling the output area of the backlight. At least one light source is disposed behind the output area to inject light into each cavity, and can be positioned in the recycling cavity or behind an aperture in the back reflector. The cavities are preferably shallow and wide, having a width-to-depth ratio of at least 5 or 10, and can provide uniform brightness and color at the output area with sparsely distributed light sources and in a thin profile backlight.
摘要:
A backlight that includes a front reflector and a back reflector that form a hollow light recycling cavity including an output surface is disclosed. The backlight further includes one or more light sources disposed to emit light into the light recycling cavity. The front reflector includes an on-axis average reflectivity of at least 90% for visible light polarized in a first plane, and an on-axis average reflectivity of at least 25% but less than 90% for visible light polarized in a second plane perpendicular to the first plane.
摘要:
Illumination assemblies and systems using same are disclosed. The illumination assembly can include a reflective substrate, and a light source unit including one or more light sources capable of producing illumination light. The assembly can further include a first light extraction surface including an azimuthal beam widening topography, where the first light extraction surface is positioned such that the light source unit is between the first light extraction surface and the reflective substrate. The first light extraction surface can face the light source unit.