摘要:
A method for supporting a semiconductor wafer includes providing a device wafer to a magnetizable ring, providing a magnetizable carrier to the device wafer, and magnetizing the magnetizable ring and the magnetizable carrier to form a magnetized clamp having a magnetized ring and magnetized carrier. The magnetized clamp securely clamps the device wafer therebetween.
摘要:
A wafer with a eutectic bonding carrier and a method of manufacturing the same are disclosed, wherein the wafer comprises a thinned wafer, a eutectic bonding layer formed on the backside of said thinned wafer, a eutectic bonding carrier attached on said eutectic bonding layer, and a plurality of openings formed at the active side of said thinned wafer and exposing said eutectic bonding layer on the backside of said thinned wafer.
摘要:
A method for supporting a semiconductor wafer includes providing a device wafer to a magnetizable ring, providing a magnetizable carrier to the device wafer, and magnetizing the magnetizable ring and the magnetizable carrier to form a magnetized clamp having a magnetized ring and magnetized carrier. The magnetized clamp securely clamps the device wafer therebetween.
摘要:
A manufacturing method of a wafer level chip scale package of an image-sensing module is provided. The method includes providing a wafer having a plurality of die regions, and a plurality of sensing units is formed on a surface of the wafer in each die region. A plurality of lens units is formed on the sensing units, wherein each lens unit includes a lens and an edge wall that are integrally formed. A light-shielding film is also formed on a surface of at least one edge wall of at least one lens units. A dicing process is then performed on the wafer to form a plurality of image sensor chips.
摘要:
An image-sensing module is provided. The image-sensing module includes a substrate, a plurality of image-sensing units, a plurality of micro lenses and a focusing unit. The image-sensing units are disposed on the substrate and the micro lenses are respectively disposed on one of the image-sensing units. The focusing unit is disposed on the substrate and covers the micro lenses. A top surface of the focusing unit is a curved surface. Furthermore, a method of manufacturing the image-sensing module and an image capture apparatus are provided.
摘要:
A metal-oxide-semiconductor transistor device for high voltage (HV MOS) and a method of manufacturing the same are disclosed. The HV MOS transistor device comprises a field oxide region with an indented lower surface combined with a plurality of field plates to elongate the path for disturbing the lateral electric field, therefore the transistor device has a relatively small size.
摘要:
A protection structure of a pad is provided. The pad is disposed in a dielectric layer on a semiconductor substrate and the pad includes a connection region and a peripheral region which encompasses the connection region. The protection structure includes at least a barrier, an insulation layer and a mask layer. The barrier is disposed in the dielectric layer in the peripheral region. The insulation layer is disposed on the dielectric layer. The mask layer is disposed on the dielectric layer and covers the insulation layer and the mask layer includes an opening to expose the connection region of the pad.
摘要:
A protection structure of a pad is provided. The pad is disposed in a dielectric layer on a semiconductor substrate and the pad includes a connection region and a peripheral region which encompasses the connection region. The protection structure includes at least a barrier, an insulation layer and a mask layer. The barrier is disposed in the dielectric layer in the peripheral region. The insulation layer is disposed on the dielectric layer. The mask layer is disposed on the dielectric layer and covers the insulation layer and the mask layer includes an opening to expose the connection region of the pad.
摘要:
A manufacturing method of a wafer level chip scale package of an image-sensing module is provided. The method includes providing. a wafer having a plurality of die regions, and a plurality of sensing units is formed on a surface of the wafer in each die region. A plurality of lens units is formed on the sensing units, wherein each lens unit includes a lens and an edge wall that are integrally formed. A light-shielding film is also formed on a surface of at least one edge wall of at least one lens units. A dicing process is then performed on the wafer to form a plurality of image sensor chips.
摘要:
An image-sensing module is provided. The image-sensing module includes a substrate, a plurality of image-sensing units, a plurality of micro lenses and a focusing unit. The image-sensing units are disposed on the substrate and the micro lenses are respectively disposed on one of the image-sensing units. The focusing unit is disposed on the substrate and covers the micro lenses. A top surface of the focusing unit is a curved surface. Furthermore, a method of manufacturing the image-sensing module and an image capture apparatus are provided.