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    Planar semiconductor devices and method of making the same
    1.
    发明授权
    Planar semiconductor devices and method of making the same 失效
    平面半导体器件及其制造方法

    公开(公告)号：US4160260A

    公开(公告)日：1979-07-03

    申请号：US852565

    申请日：1977-11-17

    申请人： Charles E. Weitzel ,  Joseph H. Scott

    发明人： Charles E. Weitzel ,  Joseph H. Scott

    IPC分类号： H01L21/60 ,  H01L29/423 ,  H01L29/78

    CPC分类号： H01L21/76897 ,  H01L29/42384 ,  Y10S148/15

    摘要： A semiconductor device includes a region of polycrystalline silicon on a portion of the surface of a body of semiconductor material. A layer of oxidized polycrystalline silicon is also on the semiconductor material body and extends to the polycrystalline silicon region. The surface of the silicon oxide layer is substantially coplanar with the surface of the polycrystalline silicon region so that a metal film conductor can be easily provided over the semiconductor device. The polycrystalline silicon region may be the gate of an MOS transistor or a conductive region of any type of semiconductor device. The semiconductor device is made by forming a polycrystalline silicon layer over the semiconductor material body, forming a mask on a portion of the polycrystalline silicon layer, reducing the thickness of the unmasked portion of the polycrystalline silicon layer and then oxidizing the unmasked portion of the polycrystalline silicon layer to form the oxide layer.

    Planar semiconductor devices and method of making the same
    2.
    发明授权
    Planar semiconductor devices and method of making the same 失效
    平面半导体器件及其制作方法

    公开(公告)号：US4263709A

    公开(公告)日：1981-04-28

    申请号：US972410

    申请日：1978-12-22

    申请人： Charles E. Weitzel ,  Joseph H. Scott

    发明人： Charles E. Weitzel ,  Joseph H. Scott

    IPC分类号： H01L21/336 ,  H01L29/423 ,  H01L29/786 ,  B01J17/00

    CPC分类号： H01L29/6678 ,  H01L29/42384 ,  H01L29/78657

    摘要： A semiconductor device includes a region of polycrystalline silicon on a portion of the surface of a body of semiconductor material. A layer of oxidized polycrystalline silicon is also on the semiconductor material body and extends to the polycrystalline silicon region. The surface of the silicon oxide layer is substantially coplanar with the surface of the polycrystalline silicon region so that a metal film conductor can be easily provided over the semiconductor device. The polycrystalline silicon region may be the gate of an MOS transistor or a conductive region of any type of semiconductor device. The semiconductor device is made by forming a polycrystalline silicon layer over the semiconductor material body, forming a mask on a portion of the polycrystalline silicon layer, reducing the thickness of the unmasked portion of the polycrystalline silicon layer and then oxidizing the unmasked portion of the polycrystalline silicon layer to form the oxide layer.

    摘要翻译： 半导体器件包括在半导体材料体的表面的一部分上的多晶硅区域。 一层氧化多晶硅也在半导体材料体上并延伸到多晶硅区域。 氧化硅层的表面与多晶硅区域的表面基本共面，从而可以容易地在半导体器件上设置金属膜导体。 多晶硅区域可以是MOS晶体管的栅极或任何类型的半导体器件的导电区域。 半导体器件通过在半导体材料体上形成多晶硅层，在多晶硅层的一部分上形成掩模，减小多晶硅层的未掩模部分的厚度，然后氧化多晶硅的未屏蔽部分 硅层形成氧化物层。

    Gridless ceiling system
    5.
    发明授权
    Gridless ceiling system 失效
    无栅天花板系统

    公开(公告)号：US06532706B1

    公开(公告)日：2003-03-18

    申请号：US09996433

    申请日：2001-11-20

    申请人： Joseph H. Scott ,  Ruth A. Scott

    发明人： Joseph H. Scott ,  Ruth A. Scott

    IPC分类号： E04C252

    CPC分类号： E04B9/064 ,  E04B9/24 ,  E04B9/30

    摘要： A gridless drop ceiling assembly having ledger boards mounted on opposing longitudinal walls of a room and extending the length of the opposing longitudinal walls, the ledger boards being mounted proximate to the height of the desired drop ceiling and in parallel relationship, a plurality of mounting studs positioned on the ledger boards, the mounted studs extending outwardly from the surface of the ledger boards, the mounting studs on opposing ledger boards being in aligned relationship, a plurality of ceiling beams generally rectangular in cross section having parallel upper and lower surfaces and parallel side surfaces and parallel opposing end surfaces, the ceiling beams dimensioned to the distance between the ledger boards, the ceiling beams having formed in the opposing end surfaces thereof an L-shaped slot in communication with one surface of the ceiling beam, the L-shaped slot having a depth at least equal to the height of the mounting stud on the ledger board for the slidable positioning of and locking of the opposing mounting studs into the mounting slots at opposing ends of the ceiling beam and a plurality of ceiling inserts supported by the ceiling beams forming a drop ceiling.

    摘要翻译： 一种无栅栏吊顶组件，其具有安装在房间的相对的纵向壁上并且延伸相对的纵向壁的长度的分隔板，分类帐板安装在期望的吊顶的高度附近并且平行关系，多个安装柱 定位在分类帐板上的安装的螺柱从分类帐板的表面向外延伸，对置的分页板上的安装螺柱处于对准关系，多个顶板横截面通常为矩形，具有平行的上下表面和平行的侧面 表面和平行的相对的端面，所述天花板梁的尺寸设计成所述分类帐板之间的距离，所述天花板梁在其相对端面中形成有与所述天花板梁的一个表面连通的L形槽，所述L形槽 具有至少等于用于可滑动的分类帐板上的安装螺柱的高度的深度 将相对的安装螺柱定位并锁定在天花板梁的相对端处的安装槽中，以及由天花板梁支撑形成吊顶的多个天花板插入件。