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公开(公告)号：US06673700B2
公开(公告)日：2004-01-06
申请号：US09895020
申请日：2001-06-30
申请人： Charles H. Dennison , Guy C. Wicker , Tyler A. Lowrey , Stephen J. Hudgens , Chien Chiang , Daniel Xu
发明人： Charles H. Dennison , Guy C. Wicker , Tyler A. Lowrey , Stephen J. Hudgens , Chien Chiang , Daniel Xu
IPC分类号： H01L21326
CPC分类号： H01L27/2463 , G11C13/0004 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16
摘要： A method comprising forming a sacrificial layer over less than the entire portion of a contact area on a substrate, the sacrificial layer having a thickness defining an edge over the contact area, forming a spacer layer over the spacer, the spacer layer conforming to the shape of the first sacrificial layer such that the spacer layer comprises an edge portion over the contact area adjacent the first sacrificial layer edge, removing the sacrificial layer, while retaining the edge portion of the spacer layer over the contact area, forming a dielectric layer over the contact area, removing the edge portion, and forming a programmable material to the contact area formerly occupied by the edge portion. An apparatus comprising a volume of programmable material, a conductor, and an electrode disposed between the volume of programmable material and the conductor, the electrode having a contact area at one end coupled to the volume of programmable material, wherein the contact area is less than the surface area at the one end.
摘要翻译： 一种方法，包括在小于衬底上的接触区域的整个部分上形成牺牲层，所述牺牲层具有限定在所述接触区域上的边缘的厚度，在所述间隔物上形成间隔层，所述隔离层符合形状 的第一牺牲层，使得间隔层包括邻近第一牺牲层边缘的接触区域上的边缘部分，去除牺牲层，同时将间隔物层的边缘部分保持在接触区域上方，形成介于第 接触区域，去除边缘部分，并且将可编程材料形成到以前由边缘部分占据的接触区域。 一种包括可编程材料体积，导体和设置在所述可编程材料体积与所述导体之间的电极的装置，所述电极在一端与所述可编程材料的体积相连接的接触区域，其中所述接触面积小于 一端的表面积。
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2.发明授权Electrically rewritable non-volatile memory element and method of manufacturing the same 有权电可重写非易失性存储元件及其制造方法公开(公告)号：US07589364B2
公开(公告)日：2009-09-15
申请号：US11264129
申请日：2005-11-02
申请人： Isamu Asano , Natsuki Sato , Tyler A. Lowrey , Guy C. Wicker , Wolodymyr Czubatyj , Stephen J. Hudgens
发明人： Isamu Asano , Natsuki Sato , Tyler A. Lowrey , Guy C. Wicker , Wolodymyr Czubatyj , Stephen J. Hudgens
IPC分类号： H01L31/112
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/148
摘要： A non-volatile memory element includes a first interlayer insulation layer 11 having a first through-hole 11a, a second interlayer insulation layer 12 having a second through-hole 12a formed on the first interlayer insulation layer 11, a bottom electrode 13 provided in the first through-hole 11, recording layer 15 containing phase change material provided in the second through-hole 12, a top electrode 16 provided on the second interlayer insulation layer 12, and a thin-film insulation layer 14 formed between the bottom electrode 13 and the recording layer 15. In accordance with this invention, the diameter D1 of a bottom electrode 13 buried in a first through-hole 11a is smaller than the diameter D2 of a second through-hole 12a, thereby decreasing the thermal capacity of the bottom electrode 13. Therefore, when a pore 14a is formed by dielectric breakdown in a thin-film insulation layer 14 and the vicinity is used as a heating region, the amount of heat escaping to the bottom electrode 13 is decreased, resulting in higher heating efficiency.
摘要翻译： 非易失性存储元件包括具有第一通孔11a的第一层间绝缘层11，形成在第一层间绝缘层11上的第二通孔12a的第二层间绝缘层12， 第一通孔11，设置在第二通孔12中的包含相变材料的记录层15，设置在第二层间绝缘层12上的顶部电极16和形成在底部电极13和 记录层15.根据本发明，埋在第一通孔11a中的底部电极13的直径D1小于第二通孔12a的直径D2，从而降低底部电极的热容量 因此，当通过薄膜绝缘层14中的电介质击穿形成孔14a并且将其附近用作加热区域时，向底部电极逸出的热量 13降低，导致更高的加热效率。
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公开(公告)号：US08062921B2
公开(公告)日：2011-11-22
申请号：US12364698
申请日：2009-02-03
IPC分类号： H01L21/00
CPC分类号： H01L45/141 , H01L27/2427 , H01L45/06
摘要： A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
摘要翻译： 可以在延长的循环中以改进的速度和稳定的特性制造相变存储器。 可以通过观察在凝固或复位状态下粘合的合金并找到实现更好的循环性能的中间或中间组合物来选择合金。 这样的合金也可以经历更快的编程并且可以具有基本相似的设置和复位编程速度。
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公开(公告)号：US4766471A
公开(公告)日：1988-08-23
申请号：US821643
申请日：1986-01-23
申请人： Stanford R. Ovshinsky , Robert R. Johnson , Stephen J. Hudgens , Roger W. Pryor , Guy C. Wicker , Robert S. Nolan
发明人： Stanford R. Ovshinsky , Robert R. Johnson , Stephen J. Hudgens , Roger W. Pryor , Guy C. Wicker , Robert S. Nolan
IPC分类号： H01L29/739 , H01L31/113 , H01L31/16 , H01L31/173 , H01L33/00 , H01S5/026 , H04B10/00 , H01L31/12
CPC分类号： H01L31/162 , H01L29/7391 , H01L31/113 , H01L31/173 , H01L33/0004 , H01S5/0264 , H04B10/802
摘要： An electro-optical communication device which includes a light transmissive conduit integrally formed to interconnect a light emitter and a light detector. The length over which the light transmissive conduit extends is substantially greater than the size of either the light emitter or the light detector. In the preferred embodiment, the light emitter and the light detector are each formed from amorphous semiconductor alloy material and may be substantially surrounded by the light transmissive conduit.
摘要翻译： 一种电光通信装置，其包括整体形成以将发光器和光检测器互连的透光导管。 透光导管延伸的长度实质上大于光发射器或光检测器的尺寸。 在优选实施例中，光发射器和光检测器各自由非晶半导体合金材料形成，并且可以基本上被透光导管包围。
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公开(公告)号：US20090142882A1
公开(公告)日：2009-06-04
申请号：US12364698
申请日：2009-02-03
IPC分类号： H01L21/00
CPC分类号： H01L45/141 , H01L27/2427 , H01L45/06
摘要： A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
摘要翻译： 可以在延长的循环中以改进的速度和稳定的特性制造相变存储器。 可以通过观察在凝固或复位状态下粘合的合金并找到实现更好的循环性能的中间或中间组合物来选择合金。 这样的合金也可以经历更快的编程并且可以具有基本相似的设置和复位编程速度。
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公开(公告)号：US06507061B1
公开(公告)日：2003-01-14
申请号：US09945331
申请日：2001-08-31
IPC分类号： H01L2976
CPC分类号： H01L45/06 , H01L29/8615 , H01L45/1233 , H01L45/128 , H01L45/144
摘要： A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.
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公开(公告)号：US06917052B2
公开(公告)日：2005-07-12
申请号：US10864232
申请日：2004-06-09
IPC分类号： H01L23/525 , H01L45/00 , H01L47/00 , G11C11/50
CPC分类号： H01L23/5252 , H01L23/5256 , H01L27/2409 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/16 , H01L45/1683 , H01L2924/0002 , H01L2924/00
摘要： In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact formed on a substrate. The resistivity of the contact is modified by at least one of implanting ions into the contact, depositing a material on the contact, and treating the contact with plasma. In an aspect, a spacer is formed within the opening and programmable material is formed within the opening and on the modified contact. A conductor is formed on the programmable material and the contact transmits to a signal line.
摘要翻译： 在一方面，提供一种设置和重新编程可编程设备的状态的设备。 在一方面，提供一种方法，使得通过暴露形成在基底上的接触的电介质形成开口。 接触的电阻率通过将离子注入接触中的至少一种来修饰，在接触上沉积材料，以及处理与等离子体的接触。 在一个方面，在开口内形成间隔件，并且在开口内和修改的接触件上形成可编程材料。 导体形成在可编程材料上，触点传输到信号线。
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公开(公告)号：US06674115B2
公开(公告)日：2004-01-06
申请号：US10309633
申请日：2002-12-04
IPC分类号： H01L2976
CPC分类号： H01L45/06 , H01L29/8615 , H01L45/1233 , H01L45/128 , H01L45/144
摘要： A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.
摘要翻译： 相变存储器可以形成有由阻挡层隔开的至少两个相变材料层。 使用多个相变层能够减少编程体积，同时仍然提供足够的热绝缘。
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公开(公告)号：US06555860B2
公开(公告)日：2003-04-29
申请号：US09770968
申请日：2001-01-25
IPC分类号： H01L2972
CPC分类号： H01L29/685 , G11C13/0004 , H01L27/105 , H01L27/24
摘要： An apparatus comprising a volume of memory material and a pair of spacedly disposed conductors. An electrode coupled to the volume of memory material and disposed between the volume of memory material and one conductor. The electrode comprises a first portion having a first thermal coefficient of resistivity and a second portion having a different second thermal coefficient of resistivity. A method including modifying the thermal coefficient of resisting of a portion of an electrode.
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公开(公告)号：US07504675B2
公开(公告)日：2009-03-17
申请号：US11709520
申请日：2007-02-22
IPC分类号： H01L29/76
CPC分类号： H01L45/141 , H01L27/2427 , H01L45/06
摘要： A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.
摘要翻译： 可以在延长的循环中以改进的速度和稳定的特性制造相变存储器。 可以通过观察在凝固或复位状态下粘合的合金并找到实现更好的循环性能的中间或中间组合物来选择合金。 这样的合金也可以经历更快的编程并且可以具有基本相似的设置和复位编程速度。
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