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25 条记录 (耗时 0.031 秒)

    Thin film electrical devices with amorphous carbon electrodes and method of making same
    3.
    发明授权
    Thin film electrical devices with amorphous carbon electrodes and method of making same 失效
    具有无定形碳电极的薄膜电器件及其制造方法

    公开(公告)号：US4845533A

    公开(公告)日：1989-07-04

    申请号：US936552

    申请日：1986-11-26

    申请人： Roger W. Pryor ,  Napoleon P. Formigoni ,  Stanford R. Ovshinsky

    发明人： Roger W. Pryor ,  Napoleon P. Formigoni ,  Stanford R. Ovshinsky

    IPC分类号： H01L21/28 ,  H01L27/10 ,  H01L27/105 ,  H01L29/43 ,  H01L45/00

    CPC分类号： H01L45/04 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1625 ,  H01L45/1675

    摘要： Thin film electrical structures, such as threshold switching devices and phase change memory cells, preferably utilizing electrically stable, relatively inert, conductive electrodes including a non-single-crystal deposited film of carbon material, are disclosed. The film of carbon material, which preferably is amorphous and substantially pure, is disposed adjacent to a layer of active material such as an amorphous semiconductor, and serves to prevent undesired degradation of the active material, especially when the device is carrying appreciable current in its on-state. A method of making such structures with high quality interfaces between the semiconductor layer and the conductive carbon barrier layers adjacent thereto by successively depositing such layers in a continuously maintained partial vacuum is disclosed. The method may include a step performed in the vacuum for hermetically sealing all of, or at least the electrically switchable portion of, the active layer against subsequent contamination. Thin film structures suitable for threshold switching or memory applications and employing insulating pores having substantially sloped side walls are also disclosed.

    摘要翻译： 公开了薄膜电结构，例如阈值开关器件和相变存储器单元，优选地使用电稳定的相对惰性的导电电极，其包括非材料碳沉积膜。 优选非晶态且基本上纯的碳材料薄膜邻近活性材料层（例如非晶半导体）设置，并且用于防止活性材料的不期望的降解，特别是当该装置在其中携带明显的电流时 状态。 公开了一种通过在连续保持的部分真空中依次沉积这些层，在半导体层和与其相邻的导电碳阻挡层之间制造具有高质量界面的这种结构的方法。 该方法可以包括在真空中执行的步骤，用于气密密封活性层的所有或至少电可切换部分，以防止随后的污染。 还公开了适用于阈值切换或存储器应用并采用具有基本上倾斜的侧壁的绝缘孔的薄膜结构。

    Carbon nitride cold cathode
    5.
    发明授权
    Carbon nitride cold cathode 失效
    碳氮化物冷阴极

    公开(公告)号：US06388366B1

    公开(公告)日：2002-05-14

    申请号：US08438118

    申请日：1995-05-08

    申请人： Roger W. Pryor

    发明人： Roger W. Pryor

    IPC分类号： C01L300

    CPC分类号： H01J1/30 ,  C01B21/0605 ,  H01J2201/30446

    摘要： A cold cathode is formed of carbon nitride. The cathode may include layers of boron nitride and diamond underlying the carbon nitride. The cathodes are made by reactive laser ablation or by sputtering. Electronic devices utilizing the carbon nitride cathodes are also described.

    摘要翻译： 冷阴极由碳氮化物形成。 阴极可以包括氮化碳层和碳纳米管下面的金刚石层。 阴极由反应激光烧蚀或溅射制成。 还描述了利用碳氮化物阴极的电子器件。

    Boron nitride cold cathode
    6.
    发明授权
    Boron nitride cold cathode 失效
    氮化硼冷阴极

    公开(公告)号：US06069436A

    公开(公告)日：2000-05-30

    申请号：US882637

    申请日：1997-06-25

    申请人： Roger W. Pryor

    发明人： Roger W. Pryor

    IPC分类号： C23C14/06 ,  C23C14/28 ,  H01J1/30 ,  H01J1/304 ,  H01J9/02 ,  H01J19/24 ,  H01J21/04

    CPC分类号： H01J1/30 ,  C23C14/0647 ,  C23C14/28

    摘要： A cold cathode is formed of n-type boron nitride. The cathode may include a layer of diamond underlying the boron nitride. The cathodes are made by laser ablation or by sputtering. Electronic devices utilizing the boron nitride cathodes are also described.

    摘要翻译： 冷阴极由n型氮化硼形成。 阴极可以包括氮化硼下面的金刚石层。 阴极通过激光烧蚀或溅射制成。 还描述了利用氮化硼阴极的电子器件。

    Method of forming cubic boron nitride films
    7.
    发明授权
    Method of forming cubic boron nitride films 失效
    形成立方氮化硼薄膜的方法

    公开(公告)号：US5483920A

    公开(公告)日：1996-01-16

    申请号：US102605

    申请日：1993-08-05

    申请人： Roger W. Pryor

    发明人： Roger W. Pryor

    IPC分类号： C23C14/02 ,  C23C14/06 ,  C30B23/02 ,  C30B23/08

    CPC分类号： C30B23/02 ,  C23C14/022 ,  C23C14/0647 ,  C30B29/403

    摘要： A novel method of forming large area single crystal cubic boron nitride films on a silicon substrate by first treating the surface of the substrate with atomic hydrogen and then depositing a cubic boron nitride film by a reactive biased laser ablation technique.

    摘要翻译： 首先通过原子氢处理衬底的表面，然后通过反应偏置激光烧蚀技术沉积立方氮化硼膜，从而在硅衬底上形成大面积单晶立方氮化硼膜的新方法。

    Boron nitride piezoresistive device
    9.
    发明授权
    Boron nitride piezoresistive device 失效
    氮化硼压阻器件

    公开(公告)号：US06453748B1

    公开(公告)日：2002-09-24

    申请号：US09464015

    申请日：1999-12-15

    申请人： Roger W. Pryor

    发明人： Roger W. Pryor

    IPC分类号： G01L906

    CPC分类号： G01L9/0042 ,  G01L9/0054

    摘要： A piezoresistive pressure sensor that makes use of n-type boron nitride as the piezoresistive material. The boron nitride enables the sensor to provide suitable performance in hostile environments. The sensor includes a titanium substrate covered with a diamond insulator layer. An n-type boron nitride piezoresistive element is deposited on the diamond layer, and is electrically connected to electrical contacts. The electrical contacts are electrically connected to a resistive measurement system for determining the resistance of the piezoresistive element. In an alternate embodiment, the boron nitride piezoresistive material is used in a micobolometer for a focal plane array.

    摘要翻译： 使用n型氮化硼作为压阻材料的压阻式压力传感器。 氮化硼使传感器能够在恶劣的环境中提供合适的性能。 传感器包括覆盖有金刚石绝缘体层的钛基底。 n型氮化硼压阻元件沉积在金刚石层上，并与电触点电连接。 电触点电连接到用于确定压阻元件的电阻的电阻测量系统。 在替代实施例中，氮化硼压阻材料用于焦平面阵列的测微计中。