摘要:
Two lens focused ion beam column (10) has an accelerating lens (20) which carries a potential to focus an image of the liquid metal ion source (14) on the mass analyzer slit (26) with a magnification of about unity. Munro lens (36) accelerates the beam of selected ion species and demagnifies the image through a long working distance to provide an ion writing spot of less than about 1000 .ANG. size.
摘要:
A process for enhancing the wettability of evaporation elements, such as substrates and metal reservoirs used in liquid metal ion sources, and the elements so produced wherein a coating material is wettably coated onto the evaporation element at a coating temperature greater than the ion source operating temperature. The coated element is cooled to the operating temperature, and then contacted with the molten ion source alloy. The coating material is selected to wet the substrate or reservoir at the coating temperature, but to be itself wet by the ion source alloy at the ion source operating temperature. The preferred coating metal is gold, which is first applied by electrodeposition onto the evaporation element, and the evaporation element and coating are heated to a coating temperature of about 800.degree. C. to complete the coating step. The coated evaporation element is cooled to the source operating temperature of 200.degree. C.-300.degree. C. and dipped into the ion source alloy, which may be an alloy such as lead-gold-arsenic or lead-gold-antimony.
摘要:
A liquid metal ion source alloy for high vapor pressure metalloids, wherein the alloy composition is chosen to have a low melting point so that the vapor pressure of the volatile constituents is low, even in the liquid state. Specifically, the ion source alloy is an alloy selected from the group of (Pb.sub.0.7-1.0 Au.sub.0.3-0).sub.0.7-0.99 (As+Sb).sub.0.3-0.01 and Pb.sub.0.20-0.30 Au.sub.0.45-0.55 (As+Sb).sub.0.20-0.30. The melting points of these alloys are about 200.degree. C.-300.degree. C., and the alloys may be maintained molten in contact with the emission elements for long periods of time without significant loss of the volatile species or reactivity with typical substrate materials used for emission elements.
摘要:
A technique for and structures for camouflaging an integrated circuit structure and strengthen its resistance to reverse engineering. A plurality of transistors are formed in a semiconductor substrate, at least some of the transistors being of the type having sidewall spacers with LDD regions formed under the sidewall spacers. Transistors are programmably interconnected with ambiguous interconnection features, the ambiguous interconnection features each comprising a channel formed in the semiconductor substrate with preferably the same dopant density as the LDD regions, with selected ones of the channels being formed of a conductivity type supporting electrical communication between interconnected active regions and with other selected ones of the channels being formed of a conductivity type inhibiting electrical communication but ambiguously appearing to a reverse engineer as supporting electrical communication.
摘要:
An apparatus and method for preventing information leakage attacks that utilize timeline alignment. The apparatus and method inserts a random number of instructions into an encryption algorithm such that the leaked information can not be aligned in time to allow an attacker to break the encryption.
摘要:
A permanently-ON MOS transistor comprises silicon source and drain regions of a first conductivity type in a silicon well region of a second conductivity type. A silicon contact region of the first conductivity types is buried in the well region, said contact region contacting said source region and said drain region. A first gate insulating layer is selectively placed over the silicon source and drain regions. A second gate insulating layer is selectively placed over the first gate insulating layer and over the silicon contact region. A polysilicon gate region is placed over the second gate insulating layer.
摘要:
An ion evaporation source for tin ions is prepared by coating a source element with a wettability enhancing gallium coating, and then loading the source with tin. The tin may be the naturally occurring tin, but can be an enriched tin containing a higher concentration of Sn.sup.120. The source produces a beam having a high fraction of Sn.sup.+ and Sn.sup.++ ions, and a small amount of the ionized wettability coating material. All but the desired ions are readily separated from the beam.
摘要:
A charge-coupled device (CCD) is provided with a dopant implant gradient, lateral channel stops and blocking implants by means of a focused ion beam (FIB). The FIB is repeatedly scanned across each cell of the CCD as a succession of overlapping but discrete implant scans. The doping levels of the FIB implants accumulate to a stepwise approximation of a desired dopant density profile, the widths of the steps being no greater than about half the widths of the discrete FIB implants. With a FIB pixel of about 750-1,500 Angstroms, the widths of the steps are preferably about 250-500 Angstroms; the dimension of the cells in the dopant gradient direction can be made less than about 5 microns. The lateral channel stops and back blocking implants can be as narrow as single FIB pixel widths, thus freeing up more of the cell for charge carrying capacity.
摘要:
A technique for and structures for camouflaging an integrated circuit structure. The integrated circuit structure is formed by a plurality of layers of material having a controlled outline. A layer of conductive material having a controlled outline is disposed among said plurality of layers to provide artifact edges of the conductive material that resemble one type of transistor (operable vs. non-operable), when in fact another type of transistor was used.
摘要:
A technique for and structures for camouflaging an integrated circuit structure. The technique including forming active areas of a first conductivity type and LDD regions of a second conductivity type resulting in a transistor that is always non-operational when standard voltages are applied to the device.