METHOD OF ADJUSTING SURFACE CHARACTERISTIC OF SUBSTRATE
    4.
    发明申请
    METHOD OF ADJUSTING SURFACE CHARACTERISTIC OF SUBSTRATE 审中-公开
    调整基板表面特性的方法

    公开(公告)号:US20080063811A1

    公开(公告)日:2008-03-13

    申请号:US11623091

    申请日:2007-01-15

    IPC分类号: H05H1/24

    摘要: A method of adjusting a surface characteristic of a substrate is provided, which includes the following steps. A substrate is provided. An atmosphere pressure plasma process is performed on the surface of the substrate to form a film layer on the surface of the substrate, so as to adjust the surface energy of the substrate, wherein a process gas of the atmosphere pressure plasma process includes a surface modifying precursor, a carrier gas and a plasma ignition gas. In particular, the surface modifying precursor is selected from fluorosilane, polysiloxane and a combination thereof, and the ratio of fluorosilane to polysiloxane is between 0 and 1.

    摘要翻译: 提供了调整基板的表面特性的方法,其包括以下步骤。 提供基板。 在基板的表面上进行大气压等离子体处理,在基板表面形成膜层,调整基板的表面能,其中大气压等离子体工艺的处理气体包括表面改性 前体,载气和等离子体点火气体。 特别地,表面改性前体选自氟硅烷,聚硅氧烷及其组合,氟硅烷与聚硅氧烷的比例在0和1之间。