Buffer bilayers for electronic devices
    1.
    发明授权
    Buffer bilayers for electronic devices 有权
    电子设备缓冲层双层

    公开(公告)号:US08461758B2

    公开(公告)日:2013-06-11

    申请号:US12642093

    申请日:2009-12-18

    IPC分类号: H01L51/52 H01L51/50

    摘要: The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including (a) at least one electrically conductive polymer doped with at least one non-highly-fluorinated acid polymer and (b) at least one highly-fluorinated acid polymer, and a second layer including inorganic nanoparticles which are oxides or sulfides.

    摘要翻译: 本发明涉及缓冲双层体及其在电子设备中的应用。 双层具有第一层,其包括(a)至少一种掺杂有至少一种非高度氟化的酸聚合物的导电聚合物和(b)至少一种高度氟化的酸聚合物,以及包含无机纳米颗粒的第二层, 氧化物或硫化物。

    BUFFER BILAYERS FOR ELECTRONIC DEVICES
    2.
    发明申请
    BUFFER BILAYERS FOR ELECTRONIC DEVICES 有权
    电子设备缓冲器

    公开(公告)号:US20100187982A1

    公开(公告)日:2010-07-29

    申请号:US12642093

    申请日:2009-12-18

    IPC分类号: H01L51/54 B32B5/16

    摘要: The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including (a) at least one electrically conductive polymer doped with at least one non-highly-fluorinated acid polymer and (b) at least one highly-fluorinated acid polymer, and a second layer including inorganic nanoparticles which are oxides or sulfides.

    摘要翻译: 本发明涉及缓冲双层体及其在电子设备中的应用。 双层具有第一层,其包括(a)至少一种掺杂有至少一种非高度氟化的酸聚合物的导电聚合物和(b)至少一种高度氟化的酸聚合物,以及包含无机纳米颗粒的第二层, 氧化物或硫化物。