摘要:
A method of fabricating a leadframe-based semiconductor package, and a semiconductor package formed thereby, are disclosed. In embodiments, a semiconductor die having die bond pads along two adjacent edges may be electrically coupled to four sides of a four-sided leadframe. Embodiments relate to lead and no-lead type leadframe.
摘要:
A method of fabricating a leadframe-based semiconductor package, and a semiconductor package formed thereby, are disclosed. In embodiments, a semiconductor die having die bond pads along two adjacent edges may be electrically coupled to four sides of a four-sided leadframe. Embodiments relate to lead and no-lead type leadframe.
摘要:
A method of fabricating a leadframe-based semiconductor package, and a semiconductor package formed thereby, are disclosed. In embodiments, a semiconductor die having die bond pads along two adjacent edges may be electrically coupled to four sides of a four-sided leadframe. Embodiments relate to lead and no-lead type leadframe.
摘要:
A method of fabricating a leadframe-based semiconductor package, and a semiconductor package formed thereby, are disclosed. In embodiments, a semiconductor die having die bond pads along two adjacent edges may be electrically coupled to four sides of a four-sided leadframe. Embodiments relate to lead and no-lead type leadframe.
摘要:
A method of fabricating a leadframe-based semiconductor package, and a semiconductor package formed thereby, are disclosed. In embodiments, a semiconductor die having die bond pads along two adjacent edges may be electrically coupled to four sides of a four-sided leadframe. Embodiments relate to lead and no-lead type leadframe.
摘要:
A method of fabricating a leadframe-based semiconductor package, and a semiconductor package formed thereby, are disclosed. In embodiments, a semiconductor die having die bond pads along two adjacent edges may be electrically coupled to four sides of a four-sided leadframe. Embodiments relate to lead and no-lead type leadframe.
摘要:
A method and system for universal packaging in conjunction with an automated in-line back-end IC manufacturing process. In one method embodiment, the present invention processes a die-strip through a number of integrated in-line processes that function independently of the die size of the die-strip. A control computer maintains a die-strip map database recording the die size of the die-strip. In-line molding and solder ball attachment processes are then performed and function independently of the die size of the die-strip. Processes that are independent of die size provide a universal packaging manufacturing solution. The present invention then accesses the database to determine the die size for cutting the die-strip based on specifications maintained by the electronic die-strip map database. Sorting, testing and finish assembly processes are then performed.
摘要:
A lead frame includes a first side rail, a second side rail spaced apart from the first side rail, a center rail disposed between the first side rail and the second side rail, and a plurality of package locations. Each package location includes a first and a second die attach paddle. The first die attach paddle supports a first side of a semiconductor die and is coupled only to the first side rail or to the second side rail. The second die attach paddle supports a second side of the semiconductor die and is coupled only to the center rail. The first and second die attach paddles are separate and unconnected to each other and may be generally circular in shape. An aggregate surface area of the first and second paddles may be less than about 25 percent of a surface area of the semiconductor die. By limiting the surface area of the interfaces between the lead frame and the silicon die and the surface area of the interfaces between the lead frame and the molding compound, moisture-related problems and problems related to the differing coefficients of thermal expansion (such as delamination and/or cracks, for example) of the constituent materials of the resultant semiconductor device are minimized.
摘要:
A multi-chip memory module may be formed including two or more stacked integrated circuits mounted to a substrate or lead frame structure. The memory module may include means to couple one or more of the stacked integrated circuits to edge conductors in a memory card package configuration. Such means may include the capability to utilize bonding pads on all four sides of an integrated circuit. A lead frame structure may be divided into first and second portions. The first portion may be adapted to receive the stacked integrated circuits and the second portion may include a plurality of conductors. The first portion may also be adapted to couple at least one of the integrated circuits to power and ground conductors on the second portion. In one embodiment, the first portion may include the lead frame paddle and a conductive ring. In another embodiment, the first portion may include first and second coplanar elements.
摘要:
A lead frame includes a first side rail, a second side rail spaced apart from the first side rail, a center rail disposed between the first side rail and the second side rail, and a plurality of package locations. Each package location includes a first and a second die attach paddle. The first die attach paddle supports a first side of a semiconductor die and is coupled only to the first side rail or to the second side rail. The second die attach paddle supports a second side of the semiconductor die and is coupled only to the center rail. The first and second die attach paddles are separate and unconnected to each other and may be generally circular in shape. An aggregate surface area of the first and second paddles may be less than about 25 percent of a surface area of the semiconductor die. By limiting the surface area of the interfaces between the lead frame and the silicon die and the surface area of the interfaces between the lead frame and the molding compound, moisture-related problems and problems related to the differing coefficients of thermal expansion (such as delamination and/or cracks, for example) of the constituent materials of the resultant semiconductor device are minimized.