Light Emitting Device and Manufacturing Method Therof
    1.
    发明申请
    Light Emitting Device and Manufacturing Method Therof 审中-公开
    发光装置及制造方法Therof

    公开(公告)号:US20100006884A1

    公开(公告)日:2010-01-14

    申请号:US12585420

    申请日:2009-09-15

    IPC分类号: H01L33/00

    摘要: The application relates to a structure of a light emitting device and the manufacturing method thereof. The application discloses a method of forming a bonding pad of the light emitting device by chemical deposition method. The light emitting device includes a substrate, a semiconductor stack deposited on the substrate wherein the semiconductor stack includes at least a p-type semiconductor layer, an n-type semiconductor layer, and an active layer disposed between the p-type semiconductor layer and the n-type semiconductor layer. A bonding pad is formed on at least one of the p-type semiconductor layer and the n-type semiconductor layer wherein the bonding pad includes a seed layer formed by physical deposition method, and a chemically-deposited layer formed by chemical deposition method. The thickness of the seed layer is smaller than that of the chemically-deposited layer.

    摘要翻译: 本发明涉及一种发光器件的结构及其制造方法。 本申请公开了一种通过化学沉积法形成发光器件的焊盘的方法。 发光器件包括衬底,沉积在衬底上的半导体堆叠,其中半导体堆叠至少包括p型半导体层,n型半导体层和设置在p型半导体层和p型半导体层之间的有源层 n型半导体层。 在p型半导体层和n型半导体层中的至少一个上形成接合焊盘,其中焊盘包括通过物理沉积方法形成的晶种层,以及通过化学沉积方法形成的化学沉积层。 种子层的厚度小于化学沉积层的厚度。

    Light emitting diode having a dual dopant contact layer
    2.
    发明授权
    Light emitting diode having a dual dopant contact layer 有权
    具有双掺杂剂接触层的发光二极管

    公开(公告)号:US07132695B2

    公开(公告)日:2006-11-07

    申请号:US10605513

    申请日:2003-10-05

    IPC分类号: H10L31/0304

    摘要: A light emitting diode with a dual dopant contact layer. The light emitting diode includes a substrate, a light emitting stacked structure formed on the substrate, a dual dopant contact layer formed on the light emitting stacked structure, and a transparent conductive oxide layer formed on the dual dopant contact layer. The dual dopant contact layer has a plurality of p-type dopants and a plurality of n-type dopants after being fabricated.

    摘要翻译: 具有双掺杂剂接触层的发光二极管。 发光二极管包括基板,形成在基板上的发光层叠结构,形成在发光层叠结构上的双掺杂剂接触层和形成在双掺杂剂接触层上的透明导电氧化物层。 双掺杂剂接触层在制造之后具有多个p型掺杂剂和多种n型掺杂剂。

    Semiconductor light-emitting device having stacked transparent electrodes
    5.
    发明申请
    Semiconductor light-emitting device having stacked transparent electrodes 有权
    具有堆叠的透明电极的半导体发光器件

    公开(公告)号:US20080241526A1

    公开(公告)日:2008-10-02

    申请号:US12078375

    申请日:2008-03-31

    申请人: Chen Ou Chen-Ke Hsu

    发明人: Chen Ou Chen-Ke Hsu

    IPC分类号: H01J1/63

    摘要: This application is related to a semiconductor light-emitting device including a substrate, a semiconductor epitaxial layer over the substrate and having a first surface distant from the substrate, a first transparent conductive layer formed on the first surface, and a second transparent conductive layer formed on the first transparent conductive layer and having a second surface smaller than a first surface of the first transparent conductive layer.

    摘要翻译: 本申请涉及一种半导体发光装置,该半导体发光装置包括:基板,在基板上的半导体外延层,并且具有远离基板的第一表面;形成在第一表面上的第一透明导电层,以及形成的第二透明导电层 在第一透明导电层上并且具有小于第一透明导电层的第一表面的第二表面。

    Semiconductor light-emitting device having stacked transparent electrodes
    6.
    发明授权
    Semiconductor light-emitting device having stacked transparent electrodes 有权
    具有堆叠的透明电极的半导体发光器件

    公开(公告)号:US08293382B2

    公开(公告)日:2012-10-23

    申请号:US12078375

    申请日:2008-03-31

    申请人: Chen Ou Chen-Ke Hsu

    发明人: Chen Ou Chen-Ke Hsu

    IPC分类号: B32B9/00

    摘要: The luminous element includes a luminescence lamination, a second transparent oxidative conducting layer and a composite conducting layer. The composite conducting layer includes first transparent oxidative conducting layer and a metal layer. The second transparent oxidative conducting layer is positioned between the metal layer and luminescence lamination the second transparent oxidative conducting layer forms good ohmic contact with the luminous element and with metal layer. Thus, the metal layer will not be influenced by interfusion so as to maintain good light transmissivity and raise luminous efficiency of luminous element.

    摘要翻译: 发光元件包括发光层压,第二透明氧化导电层和复合导电层。 复合导电层包括第一透明氧化导电层和金属层。 第二透明氧化导电层位于金属层和发光层之间,第二透明氧化导电层与发光元件和金属层形成良好的欧姆接触。 因此,金属层不会受到界面影响,从而保持良好的透光率并提高发光元件的发光效率。

    Light Mixing LED
    7.
    发明申请
    Light Mixing LED 审中-公开
    光混合LED

    公开(公告)号:US20060006375A1

    公开(公告)日:2006-01-12

    申请号:US11162562

    申请日:2005-09-14

    申请人: Chen Ou Chen-Ke Hsu

    发明人: Chen Ou Chen-Ke Hsu

    IPC分类号: H01L29/06

    CPC分类号: H01L33/08

    摘要: A light mixing LED includes a first active layer containing In laminated adjacent to an n-type nitride-based semiconductor stack layer, a second active layer containing In laminated adjacent to a p-type nitride-based semiconductor stack layer, and a tunnelable barrier layer formed between the first active layer and the second active layer.

    摘要翻译: 光混合LED包括:与n型氮化物基半导体堆叠层相邻层叠的包含In的第一有源层,与p型氮化物类半导体堆叠层相邻层叠的包含In的第二有源层和可隧道势垒层 形成在第一有源层和第二有源层之间。

    Vaginal speculum with light guide means
    8.
    发明授权
    Vaginal speculum with light guide means 失效
    阴道窥器与光导手段

    公开(公告)号:US6004265A

    公开(公告)日:1999-12-21

    申请号:US260355

    申请日:1999-03-01

    CPC分类号: A61B1/32 A61B1/07 A61B17/14

    摘要: A vaginal speculum having an upper blade and a lower blade pivoted together and adjusting screw means mounted operated to close/open the upper blade and the lower blade, wherein a longitudinally extended light guide is formed integral with an inside wall of the upper blade, having a rear end for connection to light source means by an optical fiber tube for guiding in light for illumination.

    摘要翻译: 具有上部刀片和下部刀片的阴道窥器枢转并且调节螺钉装置被安装成操作以关闭/打开上部刀片和下部刀片,其中纵向延伸的光导件与上部刀片的内壁形成一体, 用于通过用于引导光照射的光纤管连接到光源装置的后端。