公开(公告)号：US08714227B2

公开(公告)日：2014-05-06

申请号：US12842112

申请日：2010-07-23

申请人： Chen-Ke Hsu ,  Liang-Sheng Chi ,  Chun-Chang Chen ,  Win-Jim Su ,  Hsu-Cheng Lin ,  Mei-Ling Tsai ,  Yi Lung Liu ,  Chen Ou

发明人： Chen-Ke Hsu ,  Liang-Sheng Chi ,  Chun-Chang Chen ,  Win-Jim Su ,  Hsu-Cheng Lin ,  Mei-Ling Tsai ,  Yi Lung Liu ,  Chen Ou

IPC分类号： B32B38/10

CPC分类号： H01L22/20 ,  H01L21/67005 ,  H01L21/67132 ,  H01L21/67271 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/1111 ,  Y10T156/1116 ,  Y10T156/1158 ,  Y10T156/1168 ,  Y10T156/1179 ,  Y10T156/1195 ,  Y10T156/1917 ,  Y10T156/1933 ,  Y10T156/1983

摘要： A chip sorting apparatus comprising a chip holder comprising a first surface and an second surface opposite to the first surface; a wafer comprising a first chip disposed on a first position of the first surface; a first chip receiver comprising a third surface and an fourth surface opposite to the third surface, wherein the third surface is opposite to the first surface; a pressurization device making the first chip and the third surface of the first chip receiver adhered to each other through pressuring the second surface at where corresponding to the first position; and a separator decreasing the adhesion between the first chip and the first surface.

摘要翻译： 一种芯片分选装置，包括：芯片保持器，其包括第一表面和与所述第一表面相对的第二表面; 晶片，其包括设置在所述第一表面的第一位置上的第一芯片; 第一芯片接收器，包括与第三表面相对的第三表面和第四表面，其中第三表面与第一表面相对; 使第一芯片的第一芯片和第三表面的加压装置通过在对应于第一位置的位置处对第二表面施加压力而彼此粘合; 以及减小第一芯片和第一表面之间的粘附性的隔板。

公开(公告)号：US20110017407A1

公开(公告)日：2011-01-27

申请号：US12842112

申请日：2010-07-23

申请人： Chen-Ke Hsu ,  Liang-Sheng Chi ,  Chun-Chang Chen ,  Win-Jim Su ,  Hsu-Cheng Lin ,  Mei-Ling Tsai ,  Yi Lung Liu ,  Chen Ou

发明人： Chen-Ke Hsu ,  Liang-Sheng Chi ,  Chun-Chang Chen ,  Win-Jim Su ,  Hsu-Cheng Lin ,  Mei-Ling Tsai ,  Yi Lung Liu ,  Chen Ou

IPC分类号： B32B38/10

CPC分类号： H01L22/20 ,  H01L21/67005 ,  H01L21/67132 ,  H01L21/67271 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/1111 ,  Y10T156/1116 ,  Y10T156/1158 ,  Y10T156/1168 ,  Y10T156/1179 ,  Y10T156/1195 ,  Y10T156/1917 ,  Y10T156/1933 ,  Y10T156/1983

摘要： A chip sorting apparatus comprising a chip holder comprising a first surface and an second surface opposite to the first surface; a wafer comprising a first chip disposed on a first position of the first surface; a first chip receiver comprising a third surface and an fourth surface opposite to the third surface, wherein the third surface is opposite to the first surface; a pressurization device making the first chip and the third surface of the first chip receiver adhered to each other through pressuring the second surface at where corresponding to the first position; and a separator decreasing the adhesion between the first chip and the first surface.

摘要翻译： 一种芯片分选装置，包括：芯片保持器，其包括第一表面和与所述第一表面相对的第二表面; 晶片，其包括设置在所述第一表面的第一位置上的第一芯片; 第一芯片接收器，包括与第三表面相对的第三表面和第四表面，其中第三表面与第一表面相对; 使第一芯片的第一芯片和第三表面的加压装置通过在对应于第一位置的位置处对第二表面施加压力而彼此粘合; 以及减小第一芯片和第一表面之间的粘附性的隔板。

公开(公告)号：US20100200885A1

公开(公告)日：2010-08-12

申请号：US12703964

申请日：2010-02-11

申请人： Chen Ke HSU ,  Win Jim Su ,  Chia-Ming Chuang ,  Chen Ou

发明人： Chen Ke HSU ,  Win Jim Su ,  Chia-Ming Chuang ,  Chen Ou

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0095 ,  H01L33/20

摘要： A light emitting device and a method of fabricating thereof are provided. The method of fabricating the light emitting device comprises: providing a substrate having a first major surface and a second major surface; forming a plurality of light-emitting stacks on the first major surface; forming an etching protection layer on each of the light emitting stacks; forming a plurality of holes by a discontinuous laser beam on the substrate; etching the plurality of holes; and slicing off the substrate along the plurality of holes to form a light emitting device. The light emitting device has a substrate wherein the sidewall of the substrate comprising a first area with a substantially flat surface and a second area with substantially textured surface.

摘要翻译： 提供一种发光器件及其制造方法。 制造发光器件的方法包括：提供具有第一主表面和第二主表面的衬底; 在所述第一主表面上形成多个发光堆叠; 在每个发光堆上形成蚀刻保护层; 通过基板上的不连续激光束形成多个孔; 蚀刻多个孔; 并且沿着所述多个孔切割所述基板以形成发光器件。 发光器件具有衬底，其中衬底的侧壁包括具有基本平坦表面的第一区域和具有基本纹理表面的第二区域。

公开(公告)号：US08492780B2

公开(公告)日：2013-07-23

申请号：US12703964

申请日：2010-02-11

申请人： Chen Ke Hsu ,  Win Jim Su ,  Chia-Ming Chuang ,  Chen Ou

发明人： Chen Ke Hsu ,  Win Jim Su ,  Chia-Ming Chuang ,  Chen Ou

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0095 ,  H01L33/20

摘要： A light emitting device and a method of fabricating thereof are provided. The method of fabricating the light emitting device comprises: providing a substrate having a first major surface and a second major surface; forming a plurality of light-emitting stacks on the first major surface; forming an etching protection layer on each of the light emitting stacks; forming a plurality of holes by a discontinuous laser beam on the substrate; etching the plurality of holes; and slicing off the substrate along the plurality of holes to form a light emitting device. The light emitting device has a substrate wherein the sidewall of the substrate comprising a first area with a substantially flat surface and a second area with substantially textured surface.

摘要翻译： 提供一种发光器件及其制造方法。 制造发光器件的方法包括：提供具有第一主表面和第二主表面的衬底; 在所述第一主表面上形成多个发光堆叠; 在每个发光堆上形成蚀刻保护层; 通过基板上的不连续激光束形成多个孔; 蚀刻多个孔; 并且沿着所述多个孔切割所述基板以形成发光器件。 发光器件具有衬底，其中衬底的侧壁包括具有基本平坦表面的第一区域和具有基本纹理表面的第二区域。

公开(公告)号：US20080241526A1

公开(公告)日：2008-10-02

申请号：US12078375

申请日：2008-03-31

申请人： Chen Ou ,  Chen-Ke Hsu

发明人： Chen Ou ,  Chen-Ke Hsu

IPC分类号： H01J1/63

CPC分类号： H01L33/42 ,  H01L33/14 ,  Y10T428/265

摘要： This application is related to a semiconductor light-emitting device including a substrate, a semiconductor epitaxial layer over the substrate and having a first surface distant from the substrate, a first transparent conductive layer formed on the first surface, and a second transparent conductive layer formed on the first transparent conductive layer and having a second surface smaller than a first surface of the first transparent conductive layer.

摘要翻译： 本申请涉及一种半导体发光装置，该半导体发光装置包括：基板，在基板上的半导体外延层，并且具有远离基板的第一表面;形成在第一表面上的第一透明导电层，以及形成的第二透明导电层 在第一透明导电层上并且具有小于第一透明导电层的第一表面的第二表面。

公开(公告)号：US08293382B2

公开(公告)日：2012-10-23

申请号：US12078375

申请日：2008-03-31

申请人： Chen Ou ,  Chen-Ke Hsu

发明人： Chen Ou ,  Chen-Ke Hsu

IPC分类号： B32B9/00

CPC分类号： H01L33/42 ,  H01L33/14 ,  Y10T428/265

摘要： The luminous element includes a luminescence lamination, a second transparent oxidative conducting layer and a composite conducting layer. The composite conducting layer includes first transparent oxidative conducting layer and a metal layer. The second transparent oxidative conducting layer is positioned between the metal layer and luminescence lamination the second transparent oxidative conducting layer forms good ohmic contact with the luminous element and with metal layer. Thus, the metal layer will not be influenced by interfusion so as to maintain good light transmissivity and raise luminous efficiency of luminous element.

摘要翻译： 发光元件包括发光层压，第二透明氧化导电层和复合导电层。 复合导电层包括第一透明氧化导电层和金属层。 第二透明氧化导电层位于金属层和发光层之间，第二透明氧化导电层与发光元件和金属层形成良好的欧姆接触。 因此，金属层不会受到界面影响，从而保持良好的透光率并提高发光元件的发光效率。

公开(公告)号：US20060006375A1

公开(公告)日：2006-01-12

申请号：US11162562

申请日：2005-09-14

申请人： Chen Ou ,  Chen-Ke Hsu

发明人： Chen Ou ,  Chen-Ke Hsu

IPC分类号： H01L29/06

CPC分类号： H01L33/08

摘要： A light mixing LED includes a first active layer containing In laminated adjacent to an n-type nitride-based semiconductor stack layer, a second active layer containing In laminated adjacent to a p-type nitride-based semiconductor stack layer, and a tunnelable barrier layer formed between the first active layer and the second active layer.

摘要翻译： 光混合LED包括：与n型氮化物基半导体堆叠层相邻层叠的包含In的第一有源层，与p型氮化物类半导体堆叠层相邻层叠的包含In的第二有源层和可隧道势垒层 形成在第一有源层和第二有源层之间。

公开(公告)号：US07132695B2

公开(公告)日：2006-11-07

申请号：US10605513

申请日：2003-10-05

申请人： Chen Ou ,  Jia-Rong Chang ,  Chen-Ke Hsu ,  Chang-Huei Jing

发明人： Chen Ou ,  Jia-Rong Chang ,  Chen-Ke Hsu ,  Chang-Huei Jing

IPC分类号： H10L31/0304

CPC分类号： H01L33/325 ,  H01L33/025 ,  H01L33/32 ,  H01S5/0421

摘要： A light emitting diode with a dual dopant contact layer. The light emitting diode includes a substrate, a light emitting stacked structure formed on the substrate, a dual dopant contact layer formed on the light emitting stacked structure, and a transparent conductive oxide layer formed on the dual dopant contact layer. The dual dopant contact layer has a plurality of p-type dopants and a plurality of n-type dopants after being fabricated.

摘要翻译： 具有双掺杂剂接触层的发光二极管。 发光二极管包括基板，形成在基板上的发光层叠结构，形成在发光层叠结构上的双掺杂剂接触层和形成在双掺杂剂接触层上的透明导电氧化物层。 双掺杂剂接触层在制造之后具有多个p型掺杂剂和多种n型掺杂剂。

公开(公告)号：US20100006884A1

公开(公告)日：2010-01-14

申请号：US12585420

申请日：2009-09-15

申请人： Chen Ou ,  Chen-Ke Hsu ,  Chia-Ming Chuang

发明人： Chen Ou ,  Chen-Ke Hsu ,  Chia-Ming Chuang

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/0095 ,  H01L33/22 ,  H01L2924/0002 ,  H01L2924/00

摘要： The application relates to a structure of a light emitting device and the manufacturing method thereof. The application discloses a method of forming a bonding pad of the light emitting device by chemical deposition method. The light emitting device includes a substrate, a semiconductor stack deposited on the substrate wherein the semiconductor stack includes at least a p-type semiconductor layer, an n-type semiconductor layer, and an active layer disposed between the p-type semiconductor layer and the n-type semiconductor layer. A bonding pad is formed on at least one of the p-type semiconductor layer and the n-type semiconductor layer wherein the bonding pad includes a seed layer formed by physical deposition method, and a chemically-deposited layer formed by chemical deposition method. The thickness of the seed layer is smaller than that of the chemically-deposited layer.

摘要翻译： 本发明涉及一种发光器件的结构及其制造方法。 本申请公开了一种通过化学沉积法形成发光器件的焊盘的方法。 发光器件包括衬底，沉积在衬底上的半导体堆叠，其中半导体堆叠至少包括p型半导体层，n型半导体层和设置在p型半导体层和p型半导体层之间的有源层 n型半导体层。 在p型半导体层和n型半导体层中的至少一个上形成接合焊盘，其中焊盘包括通过物理沉积方法形成的晶种层，以及通过化学沉积方法形成的化学沉积层。 种子层的厚度小于化学沉积层的厚度。

公开(公告)号：US10290773B2

公开(公告)日：2019-05-14

申请号：US13614405

申请日：2012-09-13

申请人： Chen Ou ,  Liang Sheng Chi ,  Chun Wei Chang ,  Chih-Wei Wu

发明人： Chen Ou ,  Liang Sheng Chi ,  Chun Wei Chang ,  Chih-Wei Wu

IPC分类号： H01L33/08 ,  H01L33/42 ,  H01L33/14 ,  H01L33/38

摘要： A light-emitting device is disclosed and comprises: a substrate; a light-emitting stack comprising a first conductivity type semiconductor layer, an active layer over the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer over the active layer; a transparent conductive layer over the a light-emitting stack; a first trench dividing the transparent conductive layer into a first block and a second block; a connecting layer electrically connecting the two blocks of the transparent conductive layer; a first conductivity type contact layer between the substrate and the first conductivity type semiconductor layer, wherein the conductivity of the first conductivity type contact layer is greater than the conductivity of the first conductivity type semiconductor layer.