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    Method of fabricating novel seed layers for fabricating spin valve heads
    2.
    发明授权
    Method of fabricating novel seed layers for fabricating spin valve heads 有权
    制造旋转阀头的新种子层的方法

    公开(公告)号：US07234228B2

    公开(公告)日：2007-06-26

    申请号：US10308597

    申请日：2002-12-03

    申请人： Cheng T. Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Trong

    发明人： Cheng T. Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Trong

    IPC分类号： G11B5/187 ,  G11B5/39

    CPC分类号： B82Y10/00 ,  G11B5/3906 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49037 ,  Y10T29/49044 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/12778

    摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.

    摘要翻译： 一种形成具有新型种子层和合成反铁磁固定层的底部自旋阀传感器元件的方法。 该新型种子层包含约30埃厚的CrCr原子百分比为31％的NiCr层。 在该种子层上，可以形成单个底部自旋阀读取传感器或具有合成反铁磁固定层的对称双自旋阀读取传感器。 可以在种子层上直接形成非常薄的（约80埃）MnPt钉扎层，然后可以随后形成极薄的钉扎和自由层，使得传感器可用于读取密度超过60Gb / in的记录介质， SUP> 2 。 此外，高钉扎场和最佳磁致伸缩产生极其鲁棒的传感器。

    Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R
    3.
    发明授权
    Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R 有权
    形成用于NiFe（自由）MTJ堆叠以增强dR / R的非磁性帽的方法

    公开(公告)号：US07528457B2

    公开(公告)日：2009-05-05

    申请号：US11404446

    申请日：2006-04-14

    申请人： Cheng T. Horng ,  Hui-Chuan Wang ,  Min Li ,  Ru-Ying Tong ,  Tong Zhao ,  Yimin Guo

    发明人： Cheng T. Horng ,  Hui-Chuan Wang ,  Min Li ,  Ru-Ying Tong ,  Tong Zhao ,  Yimin Guo

    IPC分类号： H01L29/82 ,  G11C11/02

    CPC分类号： H01L43/10 ,  H01L43/08 ,  H01L43/12

    摘要： An MTJ in an MRAM array or TMR read head is disclosed in which a capping layer has a bilayer configuration with a non-magnetic NiFeX inner layer on a NiFe free layer and a Ta layer on the NiFeX layer to improve dR/R and minimize magnetostriction. Optionally, a trilayer configuration may be employed where the Ta layer is sandwiched between an inner NiFeX layer and an outer Ru layer. The X component in NiFeX is preferably an element having an oxidation potential greater than Ni or Fe such as Mg, Hf, Zr, Nb, or Ta. NiFeX is preferably formed by co-sputtering a NiFe target with an X target at a forward power of about 200 W and 50 W, respectively. In an MRAM structure, the Mg content in NiFeMg may be increased to >50 atomic % to improve the gettering power of removing oxygen from the free layer.

    摘要翻译： 公开了一种MRAM阵列或TMR读取头中的MTJ，其中封盖层具有在NiFe自由层上的非磁性NiFeX内层和NiFeX层上的Ta层的双层结构，以改善dR / R并最小化磁致伸缩 。 任选地，可以采用三层结构，其中Ta层夹在内部NiFeX层和外部Ru层之间。 NiFeX中的X成分优选为具有大于Ni，Fe的氧化电位的元素，例如Mg，Hf，Zr，Nb或Ta。 优选通过以约200W和50W的正向功率共同溅射具有X靶的NiFe靶来形成NiFeX。 在MRAM结构中，NiFeMg中的Mg含量可以增加到> 50原子％以提高从自由层除去氧的吸气能力。

    Seed layer for fabricating spin valve heads for ultra-high density recordings
    4.
    发明授权
    Seed layer for fabricating spin valve heads for ultra-high density recordings 有权
    用于制造用于超高密度记录的自旋阀头的种子层

    公开(公告)号：US07630176B2

    公开(公告)日：2009-12-08

    申请号：US11804271

    申请日：2007-05-17

    申请人： Cheng T. Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Torng

    发明人： Cheng T. Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Torng

    IPC分类号： G11B5/33

    CPC分类号： B82Y10/00 ,  G11B5/3906 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49037 ,  Y10T29/49044 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/12778

    摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer and the sensor so formed. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.

    摘要翻译： 一种用于形成具有新型种子层和合成反铁磁钉扎层的底部自旋阀传感器元件的方法，以及如此形成的传感器。 该新型种子层包含约30埃厚的CrCr原子百分比为31％的NiCr层。 在该种子层上，可以形成单个底部自旋阀读取传感器或具有合成反铁磁固定层的对称双自旋阀读取传感器。 可以在种子层上直接形成非常薄的（约80埃）MnPt钉扎层，然后可以随后形成极薄的钉扎和自由层，使得传感器可用于读取密度超过60Gb / in2的记录介质。 此外，高钉扎场和最佳磁致伸缩产生极其鲁棒的传感器。

    Novel method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R
    7.
    发明申请
    Novel method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R 有权
    为NiFe（自由）MTJ堆叠形成非磁性帽以增强dR / R的新方法

    公开(公告)号：US20070243638A1

    公开(公告)日：2007-10-18

    申请号：US11404446

    申请日：2006-04-14

    申请人： Cheng Horng ,  Hui-Chuan Wang ,  Min Li ,  Ru-Ying Tong ,  Tong Zhao ,  Yimin Guo

    发明人： Cheng Horng ,  Hui-Chuan Wang ,  Min Li ,  Ru-Ying Tong ,  Tong Zhao ,  Yimin Guo

    IPC分类号： H01L21/00

    CPC分类号： H01L43/10 ,  H01L43/08 ,  H01L43/12

    摘要： An MTJ in an MRAM array or TMR read head is disclosed in which a capping layer has a bilayer configuration with a non-magnetic NiFeX inner layer on a NiFe free layer and a Ta layer on the NiFeX layer to improve dR/R and minimize magnetostriction. Optionally, a trilayer configuration may be employed where the Ta layer is sandwiched between an inner NiFeX layer and an outer Ru layer. The X component in NiFeX is preferably an element having an oxidation potential greater than Ni or Fe such as Mg, Hf, Zr, Nb, or Ta. NiFeX is preferably formed by co-sputtering a NiFe target with an X target at a forward power of about 200 W and 50 W, respectively. In an MRAM structure, the Mg content in NiFeMg may be increased to >50 atomic % to improve the gettering power of removing oxygen from the free layer.

    摘要翻译： 公开了一种MRAM阵列或TMR读取头中的MTJ，其中封盖层具有在NiFe自由层上的非磁性NiFeX内层和NiFeX层上的Ta层的双层结构，以改善dR / R并最小化磁致伸缩 。 任选地，可以采用三层结构，其中Ta层夹在内部NiFeX层和外部Ru层之间。 NiFeX中的X成分优选为具有大于Ni，Fe的氧化电位的元素，例如Mg，Hf，Zr，Nb或Ta。 优选通过以约200W和50W的正向功率共同溅射具有X靶的NiFe靶来形成NiFeX。 在MRAM结构中，NiFeMg中的Mg含量可以增加到> 50原子％以提高从自由层除去氧的吸气能力。

    Novel seed layer for fabricating spin valve heads for ultra-high density recordings
    8.
    发明申请
    Novel seed layer for fabricating spin valve heads for ultra-high density recordings 有权
    用于制造用于超高密度记录的自旋阀头的新型种子层

    公开(公告)号：US20070223151A1

    公开(公告)日：2007-09-27

    申请号：US11804241

    申请日：2007-05-17

    申请人： Cheng Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Torng

    发明人： Cheng Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Torng

    IPC分类号： G11B5/127

    CPC分类号： B82Y10/00 ,  G11B5/3906 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49037 ,  Y10T29/49044 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/12778

    摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer and the sensor so formed. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.

    摘要翻译： 一种用于形成具有新型种子层和合成反铁磁钉扎层的底部自旋阀传感器元件的方法，以及如此形成的传感器。 该新型种子层包含约30埃厚的CrCr原子百分比为31％的NiCr层。 在该种子层上，可以形成单个底部自旋阀读取传感器或具有合成反铁磁固定层的对称双自旋阀读取传感器。 可以在种子层上直接形成非常薄的（约80埃）MnPt钉扎层，然后可以随后形成极薄的钉扎和自由层，使得传感器可用于读取密度超过60Gb / in的记录介质， SUP> 2 。 此外，高钉扎场和最佳磁致伸缩产生极其鲁棒的传感器。