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173 条记录 (耗时 0.049 秒)

    Seed layer for fabricating spin valve heads for ultra-high density recordings
    2.
    发明授权
    Seed layer for fabricating spin valve heads for ultra-high density recordings 有权
    用于制造用于超高密度记录的自旋阀头的种子层

    公开(公告)号：US07630176B2

    公开(公告)日：2009-12-08

    申请号：US11804271

    申请日：2007-05-17

    申请人： Cheng T. Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Torng

    发明人： Cheng T. Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Torng

    IPC分类号： G11B5/33

    CPC分类号： B82Y10/00 ,  G11B5/3906 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49037 ,  Y10T29/49044 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/12778

    摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer and the sensor so formed. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.

    摘要翻译： 一种用于形成具有新型种子层和合成反铁磁钉扎层的底部自旋阀传感器元件的方法，以及如此形成的传感器。 该新型种子层包含约30埃厚的CrCr原子百分比为31％的NiCr层。 在该种子层上，可以形成单个底部自旋阀读取传感器或具有合成反铁磁固定层的对称双自旋阀读取传感器。 可以在种子层上直接形成非常薄的（约80埃）MnPt钉扎层，然后可以随后形成极薄的钉扎和自由层，使得传感器可用于读取密度超过60Gb / in2的记录介质。 此外，高钉扎场和最佳磁致伸缩产生极其鲁棒的传感器。

    Novel seed layer for fabricating spin valve heads for ultra-high density recordings
    3.
    发明申请
    Novel seed layer for fabricating spin valve heads for ultra-high density recordings 有权
    用于制造用于超高密度记录的自旋阀头的新型种子层

    公开(公告)号：US20070223151A1

    公开(公告)日：2007-09-27

    申请号：US11804241

    申请日：2007-05-17

    申请人： Cheng Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Torng

    发明人： Cheng Horng ,  Hui-Chuan Wang ,  Ru-Ying Tong ,  Chyu-Jiuh Torng

    IPC分类号： G11B5/127

    CPC分类号： B82Y10/00 ,  G11B5/3906 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49037 ,  Y10T29/49044 ,  Y10T428/1121 ,  Y10T428/115 ,  Y10T428/12778

    摘要： A method for forming a bottom spin valve sensor element with a novel seed layer and synthetic antiferromagnetic pinned layer and the sensor so formed. The novel seed layer comprises an approximately 30 angstrom thick layer of NiCr whose atomic percent of Cr is 31%. On this seed layer there can be formed either a single bottom spin valve read sensor or a symmetric dual spin valve read sensor having synthetic antiferromagnetic pinned layers. An extremely thin (approximately 80 angstroms) MnPt pinning layer can be formed directly on the seed layer and extremely thin pinned and free layers can then subsequently be formed so that the sensors can be used to read recorded media with densities exceeding 60 Gb/in2. Moreover, the high pinning field and optimum magnetostriction produces an extremely robust sensor.

    摘要翻译： 一种用于形成具有新型种子层和合成反铁磁钉扎层的底部自旋阀传感器元件的方法，以及如此形成的传感器。 该新型种子层包含约30埃厚的CrCr原子百分比为31％的NiCr层。 在该种子层上，可以形成单个底部自旋阀读取传感器或具有合成反铁磁固定层的对称双自旋阀读取传感器。 可以在种子层上直接形成非常薄的（约80埃）MnPt钉扎层，然后可以随后形成极薄的钉扎和自由层，使得传感器可用于读取密度超过60Gb / in的记录介质， SUP> 2 。 此外，高钉扎场和最佳磁致伸缩产生极其鲁棒的传感器。

    High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same
    7.
    发明授权
    High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same 有权
    用于常规MRAM和STT-RAM的高性能MTJ元件及其制造方法

    公开(公告)号：US08372661B2

    公开(公告)日：2013-02-12

    申请号：US11981127

    申请日：2007-10-31

    申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

    发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

    IPC分类号： H01L21/00

    CPC分类号： H01L43/10 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/08 ,  H01L43/12

    摘要： A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous CO40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.

    摘要翻译： 公开了使自旋转移磁化开关电流（Jc）最小化的STT-RAM MTJ。 MTJ具有形成有自然氧化工艺的MgO隧道阻挡层，以实现低的RA（10欧姆 - um2）和不含CoFeB自由层的较低的固有阻尼常数的Fe或Fe / CoFeB / Fe自由层。 当在360℃退火的MRAM MTJ堆叠中形成具有MgO隧道势垒（自由基氧化法）和CoFeB AP1钉扎层的Fe，FeB或Fe / CoFeB / Fe自由层时，提供高dR / R（TMR ）> 100％，TMR / Rp_cov = 20时读取余量大幅度提高。 100 nm×200 nm椭圆STT-RAM MTJ的高速测量显示，用于切换无Fe层的Jc0是用于切换无定形CO40Fe40B20自由层的一半。 Fe / CoFeB / Fe自由层配置允许为STT-RAM应用增加Hc值。

    High performance MTJ elements for STT-RAM and method for making the same
    8.
    发明申请
    High performance MTJ elements for STT-RAM and method for making the same 有权
    用于STT-RAM的高性能MTJ元件和制作相同的方法

    公开(公告)号：US20100258889A1

    公开(公告)日：2010-10-14

    申请号：US12803191

    申请日：2010-06-21

    申请人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

    发明人： Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Witold Kula

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/329 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12

    摘要： An STT-MTJ MRAM cell utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The cell includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and, in one embodiment, a composite tri-layer free layer that comprises an amorphous layer of Co60Fe20B20 of approximately 20 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.

    摘要翻译： STT-MTJ MRAM单元利用自旋角动量的传递作为改变自由层的磁矩方向的机构。 电池包括形成在被钉扎层的Ar离子等离子体平滑表面上的IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧道势垒层，在一个实施例中，复合三层自由层 其包括分别在3和6埃厚度的Fe的两个结晶层之间形成的约20埃厚度的Co60Fe20B20的非晶层。 自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。 所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。