Abstract:
A control method applied to a computer system in a hybrid sleep mode is provided. The control method includes following steps: entering a first sleep mode of the computer after a system parameter is stored in a memory and a hard drive of the computer system; determining whether the computer system is resumed or not in a predetermined first period in the first sleep mode, if true, resuming the computer system by reading the system parameter from the memory; if false, entering a second sleep mode of the computer system; determining whether the computer is resumed or not in the second sleep mode; if true, resuming the computer system by reading the system parameter from the hard drive; and if false, keeping the computer system in the second sleep mode.
Abstract:
A lamp housing device for an outdoor light-emitting diode light fixture having high heat dissipation capability, which includes an upper casing, a cover body and a sunshade, wherein the cover body has light transmittance, and forms a holding chamber able to retain a light-emitting diode lamp set by pairing with the upper casing. The sunshade is located atop the outer surface of upper casing, and includes a plate and a plurality of fixing members. The fixing members are connected between the plate and the upper casing, thereby providing a spacing distance between the plate and the upper casing. Accordingly, the sunshade is able to reduce the ambient temperature of the light-emitting diodes during the daytime, and increase the rate of heat dissipation of light-emitting diodes when used at night.
Abstract:
The present invention discloses a proximity sensing apparatus and a method thereof. A sensor apparatus comprises a panel, an emitting device, and a proximity sensor module. The panel includes a first transparent area and a second transparent area; an emitting device is located under the panel and the emitting device emitting a light passing through the first transparent area. The proximity sensor module is located under the panel and the proximity sensor module includes at least one proximity sensor with high sensitivity which is a second proximity sensor and at least one proximity sensor with low sensitivity which is a first proximity sensor, and the proximity sensor module receives the light passing through the second transparent area. The light passing through the first transparent area and then reflecting from an object to passing through the second transparent area, and the panel is able to provide a touch function.
Abstract:
An infrared light detecting device and the infrared detecting method thereof. The device comprises a shield, a first photo detector and a second photo detector. The shield for blocking light is located above the first photo detector and the second photo detector. An opening is disposed on the shield above the first photo detector. In addition, there is a gap arranged between the first photo detector and the second photo detector. The first photo detector can detect the light passing through the opening to generate a photo sensing signal and couple an infrared light signal in the photo sensing signal to the second photo detector in order to output the infrared light signal.
Abstract:
The present invention discloses an illuminating system and a method thereof, comprising a light emitting module, a light sensor and a control module, wherein the control module connects to the light emitting module and the light sensor. The light emitting module emitting light with a first frequency, the light sensor detecting an intensity of incident light, and the control module controls the light emitting module to emit light with a second frequency according to the intensity of incident light.
Abstract:
A method for upgrading qualities of DRAM capacitors and wafer-to-wafer uniformity is disclosed. In order to effectively prevent wafers from contaminations, the invention uses an additional silane purge process in situ before performing a SHSG seeding process on the wafers. The silane purge process of this invention utilizes the original silane seeding gas inlet. In this manner, not only thicknesses and surface areas of the SHSG seeds and capacitances of DRAMs can be increased, but also wafer-to-wafer uniformity can be upgraded.
Abstract:
A method for forming a capacitor containing selective hemispherical grained (S-HSG) polysilicon is disclosed. In this invention, dopant implantation is incorporated after the S-HSG growth to replace conventional wet clean procedure. The elimination of the cleaning treatments avoids the incidents of residue particles (due to cleaning) and minimizes numerous structure defects. The incorporation of the ion implantation technique would make up the insufficiency of doping requirement by applying in-diffusion alone. The combination of the in-diffusion and the implantation for doping procedure could maintain the device with good capacitance level even though the pre-clean procedure is excluded.
Abstract:
An output circuit of a player can detect whether a cable is electrically connected to an output port of the output circuit. The output circuit includes a signal circuit and a decision module for detecting whether a cable is connected by detecting voltage change at the output port. If the decision module determines that a cable is connected, the signal circuit will provide video or audio signals of the player to the output port. If the decision module determines that no cable connected, the signal circuit will provide a predetermined detecting signal with nonzero average power to the output port, such that the decision module can detect whether the output end is connected to a cable again by detecting voltage change of the detecting signal.
Abstract:
A silicon oxide layer is formed on a semiconductor wafer by performing a high temperature oxidation (HTO) process using dichlorosilane (SiH2Cl2) and nitrous oxide (N2O), as reacting gases, having a flow rates with a ratio greater than 2:1, respectively. The reacting moles of dichlorosilane to nitrous oxide are in the proportion of 1:2.
Abstract:
A method of increasing the selectivity of silicon nitride deposition. A substrate is provided. A silicon oxide layer is formed over a portion of the substrate. Ammonia NH3 is passed over the silicon oxide layer and the substrate surface for a definite period to perform a surface treatment. Silicon nitride is subsequently deposited over the substrate and the silicon oxide layer.