公开(公告)号：US09129940B2

公开(公告)日：2015-09-08

申请号：US13419911

申请日：2012-03-14

申请人： Hsieh-Hung Hsieh ,  Yi-Hsuan Liu ,  Tzu-Jin Yeh ,  Chewn-Pu Jou ,  Fu-Lung Hsueh

发明人： Hsieh-Hung Hsieh ,  Yi-Hsuan Liu ,  Tzu-Jin Yeh ,  Chewn-Pu Jou ,  Fu-Lung Hsueh

IPC分类号： G01R35/00 ,  H01L23/48 ,  H01L23/66 ,  H01L25/065 ,  H04B5/00

CPC分类号： H01L23/48 ,  H01L23/66 ,  H01L25/0657 ,  H01L2225/06531 ,  H01L2924/0002 ,  H04B5/0075 ,  H01L2924/00

摘要： An integrated circuit includes a first chip and a second chip coupled to the first chip in a vertical stack. The first chip includes a radio frequency circuit and a first coil electrically coupled to the radio frequency circuit. The second chip includes a calibration circuit and a second coil electrically coupled to the calibration circuit. The calibration circuit is configured to calibrate the radio frequency circuit disposed on the first chip through inductive coupling between the first and second coils.

摘要翻译： 集成电路包括在垂直堆叠中耦合到第一芯片的第一芯片和第二芯片。 第一芯片包括射频电路和电耦合到射频电路的第一线圈。 第二芯片包括校准电路和电耦合到校准电路的第二线圈。 校准电路被配置为通过第一和第二线圈之间的感应耦合来校准设置在第一芯片上的射频电路。

公开(公告)号：US20120286836A1

公开(公告)日：2012-11-15

申请号：US13103571

申请日：2011-05-09

申请人： Hsieh-Hung Hsieh ,  Ming Hsien Tsai ,  Tzu-Jin Yeh ,  Chewn-Pu Jou ,  Fu-Lung Hsueh

发明人： Hsieh-Hung Hsieh ,  Ming Hsien Tsai ,  Tzu-Jin Yeh ,  Chewn-Pu Jou ,  Fu-Lung Hsueh

IPC分类号： H03K3/84

CPC分类号： G01R31/2824

摘要： A built-in self-test circuit for testing a voltage controlled oscillator comprises a voltage controlled oscillator, a buffer having an input coupled to an output of the voltage controlled oscillator and a radio frequency peak detector coupled to the output of the buffer. The radio frequency peak detector is configured to receive an ac signal from the voltage controlled oscillator and generate a dc value proportional to the ac signal at an output of the radio frequency peak detector. Furthermore, the output of the radio frequency peak detector generates a dc value proportional to an amplitude of the ac signal from the voltage controlled oscillator when the voltage controlled oscillator functions correctly. On the other hand, the output of the radio frequency peak detector is at zero volts when the voltage controlled oscillator fails to generate an ac signal.

摘要翻译： 用于测试压控振荡器的内置自检电路包括压控振荡器，具有耦合到压控振荡器的输出的输入的缓冲器和耦合到缓冲器的输出的射频峰值检测器。 射频峰值检测器被配置为从压控振荡器接收交流信号，并且在射频峰值检测器的输出处产生与ac信号成比例的直流值。 此外，当压控振荡器正常工作时，射频峰值检测器的输出产生与来自压控振荡器的ac信号的幅度成比例的直流值。 另一方面，当压控振荡器不能产生交流信号时，射频峰值检测器的输出为零伏特。

公开(公告)号：US08797104B2

公开(公告)日：2014-08-05

申请号：US13445955

申请日：2012-04-13

申请人： Hsieh-Hung Hsieh ,  Yi-Hsuan Liu ,  Chiao-Han Lee ,  Tzu-Jin Yeh ,  Chewn-Pu Jou

发明人： Hsieh-Hung Hsieh ,  Yi-Hsuan Liu ,  Chiao-Han Lee ,  Tzu-Jin Yeh ,  Chewn-Pu Jou

IPC分类号： H03F3/14

CPC分类号： H03F1/223 ,  H01L27/0727 ,  H03F3/193 ,  H03F2200/294 ,  H03F2200/318 ,  H03F2200/408 ,  H03F2200/411 ,  H03F2200/492

摘要： A low-noise amplifier includes a first transistor having a gate configured to receive an oscillating input signal and a source coupled to ground. A second transistor has a source coupled to a drain of the first transistor, a gate coupled to a bias voltage, and a drain coupled to an output node. At least one of the first and second transistors includes a floating deep n-well that is coupled to an isolation circuit.

摘要翻译： 低噪声放大器包括具有被配置为接收振荡输入信号的栅极的第一晶体管和耦合到地的源极。 第二晶体管具有耦合到第一晶体管的漏极的源极，耦合到偏置电压的栅极和耦合到输出节点的漏极。 第一和第二晶体管中的至少一个包括耦合到隔离电路的浮动深n阱。

公开(公告)号：US20120286888A1

公开(公告)日：2012-11-15

申请号：US13103592

申请日：2011-05-09

申请人： Hsieh-Hung Hsieh ,  Ming Hsien Tsai ,  Tzu-Jin Yeh ,  Chewn-Pu Jou ,  Fu-Lung Hsueh

发明人： Hsieh-Hung Hsieh ,  Ming Hsien Tsai ,  Tzu-Jin Yeh ,  Chewn-Pu Jou ,  Fu-Lung Hsueh

IPC分类号： H03B5/12 ,  H03H11/00

CPC分类号： H03B5/1215 ,  H03B5/1228 ,  H03B5/1243 ,  H03B5/1265 ,  H03B2201/0266

摘要： A system comprises a voltage controlled oscillator comprising an inductor and a variable capacitor and a switched capacitor array connected in parallel with the variable capacitor. The switched capacitor array further comprises a plurality of capacitor banks wherein a thermometer code is employed to control each capacitor bank. In addition, the switched capacitor array provides N tuning steps for the oscillation frequency of the voltage controlled oscillator when the switched capacitor array is controlled by an n-bit thermometer code.

摘要翻译： 一种系统包括压控振荡器，其包括电感器和可变电容器以及与可变电容器并联连接的开关电容器阵列。 开关电容器阵列还包括多个电容器组，其中使用温度计代码来控制每个电容器组。 此外，当开关电容器阵列由n位温度计代码控制时，开关电容器阵列为压控振荡器的振荡频率提供N个调谐步骤。

公开(公告)号：US09397729B2

公开(公告)日：2016-07-19

申请号：US12946072

申请日：2010-11-15

申请人： Tzu-Jin Yeh ,  Hsieh-Hung Hsieh ,  Jun-De Jin ,  Ming Hsien Tsai ,  Chewn-Pu Jou ,  Fu-Lung Hsueh

发明人： Tzu-Jin Yeh ,  Hsieh-Hung Hsieh ,  Jun-De Jin ,  Ming Hsien Tsai ,  Chewn-Pu Jou ,  Fu-Lung Hsueh

IPC分类号： H04B5/00

CPC分类号： H04B5/0081

摘要： Through-chip coupling is utilized for signal transport, where an interface is formed between a first coil on a first integrated circuit (IC) chip and a second coil on a second IC chip. The first coil is coupled to an antenna. The second coil is coupled to an amplifier circuit. The second coil is not in direct contact with the first coil. The first coil and the second coil communicatively transmit signals between the antenna and the first amplifier circuit.

摘要翻译： 芯片耦合用于信号传输，其中在第一集成电路（IC）芯片上的第一线圈和第二IC芯片上的第二线圈之间形成接口。 第一线圈耦合到天线。 第二线圈耦合到放大器电路。 第二线圈不与第一线圈直接接触。 第一线圈和第二线圈在天线和第一放大器电路之间通信地传送信号。

公开(公告)号：US08729968B2

公开(公告)日：2014-05-20

申请号：US13103571

申请日：2011-05-09

申请人： Hsieh-Hung Hsieh ,  Ming Hsien Tsai ,  Tzu-Jin Yeh ,  Chewn-Pu Jou ,  Fu-Lung Hsueh

发明人： Hsieh-Hung Hsieh ,  Ming Hsien Tsai ,  Tzu-Jin Yeh ,  Chewn-Pu Jou ,  Fu-Lung Hsueh

IPC分类号： H03L5/00

CPC分类号： G01R31/2824

摘要： A built-in self-test circuit for testing a voltage controlled oscillator comprises a voltage controlled oscillator, a buffer having an input coupled to an output of the voltage controlled oscillator and a radio frequency peak detector coupled to the output of the buffer. The radio frequency peak detector is configured to receive an ac signal from the voltage controlled oscillator and generate a dc value proportional to the ac signal at an output of the radio frequency peak detector. Furthermore, the output of the radio frequency peak detector generates a dc value proportional to an amplitude of the ac signal from the voltage controlled oscillator when the voltage controlled oscillator functions correctly. On the other hand, the output of the radio frequency peak detector is at zero volts when the voltage controlled oscillator fails to generate an ac signal.

摘要翻译： 用于测试压控振荡器的内置自检电路包括压控振荡器，具有耦合到压控振荡器的输出的输入的缓冲器和耦合到缓冲器的输出的射频峰值检测器。 射频峰值检测器被配置为从压控振荡器接收交流信号，并且在射频峰值检测器的输出处产生与ac信号成比例的直流值。 此外，当压控振荡器正常工作时，射频峰值检测器的输出产生与来自压控振荡器的ac信号的幅度成比例的直流值。 另一方面，当压控振荡器不能产生交流信号时，射频峰值检测器的输出为零伏特。

公开(公告)号：US08664729B2

公开(公告)日：2014-03-04

申请号：US13325922

申请日：2011-12-14

申请人： Chewn-Pu Jou ,  Tzu-Jin Yeh ,  Hsieh-Hung Hsieh

发明人： Chewn-Pu Jou ,  Tzu-Jin Yeh ,  Hsieh-Hung Hsieh

IPC分类号： H01L27/088

CPC分类号： H01L29/66795 ,  H01L29/42372 ,  H01L29/785

摘要： Methods and apparatus for reduced gate resistance finFET. A metal gate transistor structure is disclosed including a plurality of semiconductor fins formed over a semiconductor substrate, the fins being arranged in parallel and spaced apart; a metal containing gate electrode formed over the semiconductor substrate and overlying a channel gate region of each of the semiconductor fins, and extending over the semiconductor substrate between the semiconductor fins; an interlevel dielectric layer overlying the gate electrode and the semiconductor substrate; and a plurality of contacts disposed in the interlevel dielectric layer and extending through the interlevel dielectric layer to the gate electrode; a low resistance metal strap formed over the interlevel dielectric layer and coupled to the gate electrode by the plurality of contacts; wherein the plurality of contacts are spaced apart from the channel gate regions of the semiconductor fins. Methods for forming the reduced gate finFET are disclosed.

摘要翻译： 降低栅极电阻finFET的方法和装置。 公开了一种金属栅极晶体管结构，其包括形成在半导体衬底上的多个半导体鳍片，所述鳍片平行布置并间隔开; 一个含金属的栅电极，形成在半导体衬底之上，并且覆盖每个半导体鳍片的沟道栅极区域，并且在半导体鳍片之间的半导体衬底上延伸; 覆盖所述栅电极和所述半导体衬底的层间电介质层; 以及多个触点，其布置在所述层间电介质层中并且延伸穿过所述层间电介质层到所述栅电极; 形成在所述层间电介质层上并且由所述多个触点耦合到所述栅电极的低电阻金属带; 其中所述多个触点与所述半导体鳍片的沟道栅极区域间隔开。 公开了形成栅极finFET的方法。

公开(公告)号：US20130154011A1

公开(公告)日：2013-06-20

申请号：US13325922

申请日：2011-12-14

申请人： Chewn-Pu Jou ,  Tzu-Jin Yeh ,  Hsieh-Hung Hsieh

发明人： Chewn-Pu Jou ,  Tzu-Jin Yeh ,  Hsieh-Hung Hsieh

IPC分类号： H01L27/088 ,  H01L21/336

CPC分类号： H01L29/66795 ,  H01L29/42372 ,  H01L29/785

摘要： Methods and apparatus for reduced gate resistance finFET. A metal gate transistor structure is disclosed including a plurality of semiconductor fins formed over a semiconductor substrate, the fins being arranged in parallel and spaced apart; a metal containing gate electrode formed over the semiconductor substrate and overlying a channel gate region of each of the semiconductor fins, and extending over the semiconductor substrate between the semiconductor fins; an interlevel dielectric layer overlying the gate electrode and the semiconductor substrate; and a plurality of contacts disposed in the interlevel dielectric layer and extending through the interlevel dielectric layer to the gate electrode; a low resistance metal strap formed over the interlevel dielectric layer and coupled to the gate electrode by the plurality of contacts; wherein the plurality of contacts are spaced apart from the channel gate regions of the semiconductor fins. Methods for forming the reduced gate finFET are disclosed.

摘要翻译： 降低栅极电阻finFET的方法和装置。 公开了一种金属栅极晶体管结构，其包括形成在半导体衬底上的多个半导体鳍片，所述鳍片平行布置并间隔开; 一个含金属的栅电极，形成在半导体衬底之上，并且覆盖每个半导体鳍片的沟道栅极区域，并且在半导体鳍片之间的半导体衬底上延伸; 覆盖所述栅电极和所述半导体衬底的层间电介质层; 以及多个触点，其布置在所述层间电介质层中并且延伸穿过所述层间电介质层到所述栅电极; 形成在所述层间电介质层上并且由所述多个触点耦合到所述栅电极的低电阻金属带; 其中所述多个触点与所述半导体鳍片的沟道栅极区域间隔开。 公开了形成栅极finFET的方法。

公开(公告)号：US08451033B2

公开(公告)日：2013-05-28

申请号：US12967160

申请日：2010-12-14

申请人： Po-Yi Wu ,  Hsieh-Hung Hsieh ,  Ho-Hsiang Chen ,  Tzu-Jin Yeh ,  Chewn-Pu Jou ,  Fu-Lung Hsueh

发明人： Po-Yi Wu ,  Hsieh-Hung Hsieh ,  Ho-Hsiang Chen ,  Tzu-Jin Yeh ,  Chewn-Pu Jou ,  Fu-Lung Hsueh

IPC分类号： H03B19/00

CPC分类号： H03B19/00

摘要： A millimeter-wave wideband frequency doubler stage for use in a distributed frequency doubler includes: a differential input pair of transistors, each transistor having respective gate, drain and source terminals, wherein the source terminals are coupled together to a first power supply node and the drain terminals are coupled together at a first node to a second power supply node; first and second pairs of bandpass gate lines coupled to the gate terminals of the transistors; and a pair of bandpass drain lines coupled to the drain terminals of the transistors.

摘要翻译： 用于分布式倍频器的毫米波宽带倍频器级包括：差分输入对晶体管，每个晶体管具有相应的栅极，漏极和源极端子，其中源极端子耦合到第一电源节点，并且 漏极端子在第一节点耦合到第二电源节点; 耦合到晶体管的栅极端子的第一和第二对带通栅极线; 以及耦合到晶体管的漏极端子的一对带通漏极线。

公开(公告)号：US09780211B2

公开(公告)日：2017-10-03

申请号：US13731873

申请日：2012-12-31

申请人： Chewn-Pu Jou ,  Tzu-Jin Yeh ,  Chia-Chung Chen

发明人： Chewn-Pu Jou ,  Tzu-Jin Yeh ,  Chia-Chung Chen

IPC分类号： H01L27/088 ,  H01L29/78 ,  H01L29/66

CPC分类号： H01L29/785 ,  H01L29/66901

摘要： A power cell includes a fin over a substrate, the fin extending in a direction substantially perpendicular to a bottom surface of the substrate. The fin includes a first dopant type. The power cell further includes at least one isolation region over the substrate between the fin and an adjacent fin. The power cell further includes a gate structure in contact with the fin and the at least one isolation region, wherein the gate structure comprises a doped region in the fin, wherein the doped region has a second dopant type different from the first dopant type and the doped region defines a channel region in the fin.