公开(公告)号：US06583477B1

公开(公告)日：2003-06-24

申请号：US10121981

申请日：2002-04-12

申请人： Chi Sun Hwang ,  Yoon Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

发明人： Chi Sun Hwang ,  Yoon Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

IPC分类号： H01L2906

CPC分类号： H01J29/96 ,  H01J1/46 ,  H01J3/021 ,  H01J29/02 ,  H01J29/467 ,  H01J31/127 ,  H01J2329/92 ,  H01L27/12 ,  H01L29/78669

摘要： The present invention provides a field emission device driven with a high voltage. The field emission device of the present invention includes a resistor connected between a gate electrode and an external terminal to prevent a leakage current by an electrical connection between the gate electrode and the emitter. Therefore, the power consumption of the device is decreased and the operating characteristic of the device is improved.

摘要翻译： 本发明提供一种利用高电压驱动的场致发射器件。 本发明的场致发射器件包括连接在栅电极和外部端子之间的电阻器，以通过栅电极和发射极之间的电连接来防止漏电流。 因此，降低了设备的功耗，提高了设备​​的工作特性。

公开(公告)号：US06204608B1

公开(公告)日：2001-03-20

申请号：US09442486

申请日：1999-11-18

申请人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Sung Yool Choi ,  Kyoung Ik Cho

发明人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Sung Yool Choi ,  Kyoung Ik Cho

IPC分类号： G09G330

CPC分类号： G09G3/22 ,  G09G2300/0842

摘要： A field emission display device is disclosed. The device comprises an upper plate and a lower plate that are vacuum-packaged in parallel, wherein the lower plate is composed of matrix-addressable pixels, wherein the pixel formed on an insulation substrate comprises a field emitter array, a control thin-film transistor having a drain connected to an emitter electrode of the emitter array, and an addressing thin-film transistor having a drain connected to a gate electrode of the control thin-film transistor. Designing the control thin-film transistor to have a large parasitic capacitance between the source and the gate, one can obtain an active matrix display having a memory function and eliminate a conventional complex fabricating process of a memory capacitor, thereby simplify a panel fabricating process remarkably and largely increase the aperture ratio of a pixel. Furthermore, in the present invention, introducing glass for a substrate material instead of conventional single crystal silicon wafer, one can cheaply produce a large size panel and easily carry out a vacuum packaging that is indispensable for fabricating a field emission display.

摘要翻译： 公开了一种场致发射显示装置。 该装置包括平行真空包装的上板和下板，其中下板由可矩阵寻址的像素组成，其中形成在绝缘基板上的像素包括场致发射阵列，控制薄膜晶体管 具有连接到发射极阵列的发射极的漏极，以及具有连接到控制薄膜晶体管的栅电极的漏极的寻址薄膜晶体管。 将控制薄膜晶体管设计成在源极和栅极之间具有大的寄生电容，可以获得具有存储功能的有源矩阵显示器，并消除了存储电容器的常规复杂制造工艺，从而显着地简化了面板制造工艺 并大大提高像素的开口率。 此外，在本发明中，为了代替传统的单晶硅晶片引入用于基板材料的玻璃，可以廉价地生产大尺寸面板，并且容易地实现对于制造场致发射显示器而言不可或缺的真空包装。

公开(公告)号：US06307323B1

公开(公告)日：2001-10-23

申请号：US09474528

申请日：1999-12-29

申请人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho

发明人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho

IPC分类号： G05G310

CPC分类号： B82Y10/00 ,  G09G3/22 ,  H01J31/126 ,  H01J2201/30457 ,  H01J2201/30469 ,  H01J2201/319

摘要： A field emission display in which field emission devices are applied to a flat panel display. A field emission display with diode-type field emitters includes an upper plate and a lower plate, the upper plate and the lower plate are vacuum-packaged in parallel. The lower plate includes a plurality of column signal buses and a plurality of row signal buses, film type field emitters, and switching devices. The column signal buses and the row signal buses are made of metallic material. Pixels are defined by the column signal buses and the row signal buses. A film type field emitter and a switching device are formed inside each pixel. The switching device controls the field emitter on the basis of scan signals and data signals. The scan signals and data signals are loaded to the switching devices through the column signal buses and the row signal buses. The switching device includes at least three electrodes for connection with the column signal bus, the row signal bus, and the field emitter.

摘要翻译： 场发射装置用于平板显示器的场致发射显示器。 具有二极管型场致发射体的场发射显示器包括上板和下板，上板和下板被并联真空包装。 下板包括多个列信号总线和多个行信号总线，薄膜型场发射器和开关装置。 列信号总线和行信号总线由金属材料制成。 像素由列信号总线和行信号总线定义。 在每个像素内部形成有膜型场发射器和开关器件。 开关装置根据扫描信号和数据信号控制场发射器。 扫描信号和数据信号通过列信号总线和行信号总线加载到开关装置。 开关装置包括用于与列信号总线，行信号总线和场发射器连接的至少三个电极。

公开(公告)号：US6069018A

公开(公告)日：2000-05-30

申请号：US141121

申请日：1998-08-27

申请人： Yoon-Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

发明人： Yoon-Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

IPC分类号： H01J17/49 ,  H01L21/00

CPC分类号： H01J9/025 ,  H01J2201/30411 ,  H01J2209/0226 ,  H01J2237/06341 ,  H01J2329/0415

摘要： A method for manufacturing a cathode tip of electric field emission device includes depositing conductive layer and undoped silicon layer on the insulator substrate sequentially; forming a tip-mask pattern on the selected area of top of said undoped silicon film and etching said undoped silicon film isotropically and then anisotropically in turn, so that the silicon film is formed as cone-like having cylinder; and removing the tip-mask pattern, implanting ion into the etched silicon layer and removing the ion implanted silicon layer using the wet etch process.

摘要翻译： 制造电场发射器件的阴极尖端的方法包括依次在绝缘体衬底上沉积导电层和未掺杂的硅层; 在所述未掺杂的硅膜的顶部的选定区域上形成尖端掩模图案，并且各向同性地各向异性地蚀刻所述未掺杂的硅膜，从而使得硅膜形成为具有圆筒的锥形; 并且去除尖端掩模图案，将离子注入到蚀刻的硅层中并且使用湿蚀刻工艺去除离子注入的硅层。

公开(公告)号：US06812635B2

公开(公告)日：2004-11-02

申请号：US10179739

申请日：2002-06-24

申请人： Young Rae Cho ,  Do Hyung Kim ,  Seong Deok Ahn ,  Yoon Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

发明人： Young Rae Cho ,  Do Hyung Kim ,  Seong Deok Ahn ,  Yoon Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

IPC分类号： H01J162

CPC分类号： H01J1/3048 ,  H01J9/025 ,  Y10S977/939

摘要： The present invention relates to a cathode for use in a field emission device. In a triode-type cathode for use in an electron emission device being a core component constituting a field emission device, the present invention includes forming a catalytic layer at the sidewall of a gate hole and then growing an emitter in the catalytic layer, thus uniformly distributing an electric field generated by a voltage applied to a gate electrode over the emitter. Therefore, the present invention can improve the brightness contrast at a low anode voltage and also can control electrons emitted from the emitter only with the gate voltage.

摘要翻译： 本发明涉及用于场发射装置的阴极。 在作为构成场致发射器件的核心部件的电子发射器件中使用的三极管型阴极中，本发明包括在栅极孔的侧壁处形成催化剂层，然后在催化剂层中生长发射极，从而均匀地 分配由施加到发射极上的栅电极的电压产生的电场。 因此，本发明可以提高低阳极电压下的亮度对比度，并且还可以仅利用栅极电压来控制从发射极发射的电子。

公开(公告)号：US6137219A

公开(公告)日：2000-10-24

申请号：US122823

申请日：1998-07-27

申请人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho ,  Hyung Joun Yoo

发明人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho ,  Hyung Joun Yoo

IPC分类号： H01J1/30 ,  G09G3/22 ,  H01J31/12

CPC分类号： G09G3/22 ,  H01J31/127 ,  G09G2300/08 ,  H01J2201/304 ,  H01J2201/319

摘要： A field emission display having an n-channel high voltage thin film transistor is disclosed. According to the present invention, a signal for driving pixels controls by the nHVTFT attached with each pixel, therefore, the signal voltage of row and column drivers is exceedingly decreased. As a result, it is possible to implement a field emission display capable of providing a high quality picture in a low consumption power, a low driving voltage and inexpensive to manufacture, and preventing a line cross talk using the nHVTFT. By using a cylindrical resistive body underlying a cone-shaped emitter tip, the present invention is to provide a field emission display having an excellent contollability and stability of the emission current, and a dynamic driving capability.

摘要翻译： 公开了具有n沟道高电压薄膜晶体管的场致发射显示器。 根据本发明，通过每个像素附着的nHVTFT控制用于驱动像素的信号，因此，行和列驱动器的信号电压被极大地降低。 结果，可以实现能够以低功耗，低驱动电压提供高质量图像并且制造成本低廉的场致发射显示器，并且防止使用nHVTFT的线路串扰。 通过使用锥形发射极尖端下方的圆柱形电阻体，本发明提供了具有优异的发射电流的可配置性和稳定性以及动态驱动能力的场致发射显示器。

公开(公告)号：US08493768B2

公开(公告)日：2013-07-23

申请号：US13300688

申请日：2011-11-21

申请人： Chunwon Byun ,  ByeongHoon Kim ,  Sung Min Yoon ,  Shinhyuk Yang ,  Min Ki Ryu ,  Chi-Sun Hwang ,  Sang-Hee Park ,  Kyoung Ik Cho

发明人： Chunwon Byun ,  ByeongHoon Kim ,  Sung Min Yoon ,  Shinhyuk Yang ,  Min Ki Ryu ,  Chi-Sun Hwang ,  Sang-Hee Park ,  Kyoung Ik Cho

IPC分类号： G11C11/22

CPC分类号： G11C11/22

摘要： Provided is a memory cell including: a ferroelectric transistor; a plurality of switching elements electrically connected to the ferroelectric transistor; and a plurality of control lines for transmitting individual control signals to each of the plurality of switching element for separately controlling the plurality of switching elements. The plurality of switching elements are configured to be separately controlled on the basis of the individual control signals so as to prevent each electrode of the ferroelectric transistor from being floated.

摘要翻译： 提供一种存储单元，包括：铁电晶体管; 电连接到所述铁电晶体管的多个开关元件; 以及多个控制线，用于将各个控制信号发送到多个开关元件中的每一个，用于分别控制多个开关元件。 多个开关元件被配置为基于各个控制信号单独控制，以防止铁电晶体管的每个电极浮动。

公开(公告)号：US20120225500A1

公开(公告)日：2012-09-06

申请号：US13469558

申请日：2012-05-11

申请人： Sung Min YOON ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

发明人： Sung Min YOON ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

IPC分类号： H01L51/40

CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

公开(公告)号：US08198625B2

公开(公告)日：2012-06-12

申请号：US12555986

申请日：2009-09-09

申请人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

发明人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

IPC分类号： H01L35/24

CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

公开(公告)号：US20110266542A1

公开(公告)日：2011-11-03

申请号：US13094933

申请日：2011-04-27

申请人： Min Ki RYU ,  Sang Hee Park ,  Chi Sun Hwang ,  Kyoung Ik Cho

发明人： Min Ki RYU ,  Sang Hee Park ,  Chi Sun Hwang ,  Kyoung Ik Cho

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L27/124 ,  H01L27/1225 ,  H01L29/78648

摘要： Provided are a semiconductor device including a dual gate transistor and a method of fabricating the same. The semiconductor device includes a lower gate electrode, an upper gate electrode on the lower gate electrode, a contact plug interposed between the lower gate electrode and the upper gate electrode, and connecting the lower gate electrode to the upper gate electrode, and a functional electrode spaced apart from the upper gate electrode and formed at the same height as the upper gate electrode. The dual gate transistor exhibiting high field effect mobility is applied to the semiconductor device, so that characteristics of the semiconductor device can be improved. In particular, since no additional mask or deposition process is necessary, a large-area high-definition semiconductor device can be mass-produced with neither an increase in process cost nor a decrease in yield.

摘要翻译： 提供一种包括双栅晶体管的半导体器件及其制造方法。 半导体器件包括下栅极电极，下栅电极上的上栅电极，插入在下栅电极和上栅电极之间的接触插塞，并将下栅电极连接到上栅电极，功能电极 与上栅电极间隔开并形成与上栅电极相同的高度。 表现出高场效应迁移率的双栅极晶体管被施加到半导体器件，从而可以提高半导体器件的特性。 特别是，由于不需要附加的掩模或沉积工艺，所以大面积的高分辨率半导体器件既可以增加工艺成本也不会降低产量。