公开(公告)号：US06583477B1

公开(公告)日：2003-06-24

申请号：US10121981

申请日：2002-04-12

申请人： Chi Sun Hwang ,  Yoon Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

发明人： Chi Sun Hwang ,  Yoon Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

IPC分类号： H01L2906

CPC分类号： H01J29/96 ,  H01J1/46 ,  H01J3/021 ,  H01J29/02 ,  H01J29/467 ,  H01J31/127 ,  H01J2329/92 ,  H01L27/12 ,  H01L29/78669

摘要： The present invention provides a field emission device driven with a high voltage. The field emission device of the present invention includes a resistor connected between a gate electrode and an external terminal to prevent a leakage current by an electrical connection between the gate electrode and the emitter. Therefore, the power consumption of the device is decreased and the operating characteristic of the device is improved.

摘要翻译： 本发明提供一种利用高电压驱动的场致发射器件。 本发明的场致发射器件包括连接在栅电极和外部端子之间的电阻器，以通过栅电极和发射极之间的电连接来防止漏电流。 因此，降低了设备的功耗，提高了设备​​的工作特性。

公开(公告)号：US20050248256A1

公开(公告)日：2005-11-10

申请号：US11120679

申请日：2005-05-03

申请人： Yoon Ho Song ,  Jin Ho Lee ,  Chi Sun Hwang

发明人： Yoon Ho Song ,  Jin Ho Lee ,  Chi Sun Hwang

IPC分类号： H01J29/04 ,  H01J1/30 ,  H01J1/304 ,  H01J29/06 ,  H01J31/12 ,  H01J1/62 ,  H01J1/02

CPC分类号： H01J29/06 ,  H01J31/127

摘要： Provided is a field emission display, which includes: a cathode portion including row signal lines and column signal lines in a stripe form allowing matrix addressing to be carried out on a substrate, and pixels defined by the row signal lines and the column signal lines, each pixel having a field emitter and a control device which controls the field emitter with two terminals connected to at least the row signal line and the column signal line and one terminal connected to the field emitter; an anode portion having an anode electrode, and a phosphor connected to the anode electrode; and a gate portion having a metal mesh with a plurality of penetrating holes, and a dielectric layer formed on at least one region of the metal mesh, wherein the gate portion is disposed between the cathode portion and the anode portion to allow the surface where the dielectric layer is formed to be faced to the cathode portion and to allow electrons emitted from the field emitter to collide with the phosphor via the penetrating holes.

摘要翻译： 本发明提供一种场发射显示器，其包括：阴极部分，包括行信号线和条形形式的列信号线，允许在衬底上执行矩阵寻址，以及由行信号线和列信号线限定的像素， 每个像素具有场发射器和控制器件，其控制场致发射器，其中两个端子至少连接到行信号线和列信号线，一个端子连接到场发射器; 具有阳极电极的阳极部分和与阳极电极连接的荧光体; 以及栅极部分，具有具有多个穿透孔的金属网，以及形成在所述金属网的至少一个区域上的电介质层，其中所述栅极部分设置在所述阴极部分和所述阳极部分之间， 电介质层形成为面向阴极部分并且允许从场发射器发射的电子经由穿透孔与磷光体碰撞。

公开(公告)号：US07309954B2

公开(公告)日：2007-12-18

申请号：US10745736

申请日：2003-12-23

申请人： Yoon Ho Song ,  Chi Sun Hwang ,  Choong Heui Chung ,  Jin Ho Lee

发明人： Yoon Ho Song ,  Chi Sun Hwang ,  Choong Heui Chung ,  Jin Ho Lee

IPC分类号： H01J1/62

CPC分类号： H01J29/481 ,  H01J29/028 ,  H01J29/467 ,  H01J31/127 ,  H01J2329/8625

摘要： The present invention relates to a field emission display in which a gate plate having a gate hole and a gate electrode around the gate hole is formed between an anode plate having phosphor and a cathode plate having a field emitter and a control device for controlling field emission current, wherein the field emitter of the cathode plate is constructed to be opposite to the phosphor of the anode plate through the gate hole.According to the present invention, it is possible to significantly reduce the display row/column driving voltage by applying scan and data signals of the field emission display to the control device of each pixel, And the present invention is directed to improve the brightness of the field emission display in such a manner that the electric field necessary for field emission is applied through the gate electrode of the gate plate to freely control the distance between the anode plate and the cathode plate, so that a high voltage can be applied to the anode.

摘要翻译： 本发明涉及一种场致发射显示器，其中在具有荧光体的阳极板和具有场发射极的阴极板之间形成具有栅极孔和围绕栅极孔的栅电极的栅极板和用于控制场致发射的控制装置 电流，其中阴极板的场发射极被构造成通过栅极孔与阳极板的荧光体相对。 根据本发明，通过将场发射显示的扫描和数据信号施加到每个像素的控制装置，可以显着降低显示行/列驱动电压。本发明旨在提高 以通过栅极板的栅电极施加场发射所需的电场以自由地控制阳极板和阴极板之间的距离的方式进行场发射显示，从而可以向阳极施加高电压 。

公开(公告)号：US07456564B2

公开(公告)日：2008-11-25

申请号：US11120679

申请日：2005-05-03

申请人： Yoon Ho Song ,  Jin Ho Lee ,  Chi Sun Hwang

发明人： Yoon Ho Song ,  Jin Ho Lee ,  Chi Sun Hwang

IPC分类号： H01J1/62

CPC分类号： H01J29/06 ,  H01J31/127

摘要： Provided is a field emission display, which includes: a cathode portion including row signal lines and column signal lines in a stripe form allowing matrix addressing to be carried out on a substrate, and pixels defined by the row signal lines and the column signal lines, each pixel having a field emitter and a control device which controls the field emitter with two terminals connected to at least the row signal line and the column signal line and one terminal connected to the field emitter; an anode portion having an anode electrode, and a phosphor connected to the anode electrode; and a gate portion having a metal mesh with a plurality of penetrating holes, and a dielectric layer formed on at least one region of the metal mesh, wherein the gate portion is disposed between the cathode portion and the anode portion to allow the surface where the dielectric layer is formed to be faced to the cathode portion and to allow electrons emitted from the field emitter to collide with the phosphor via the penetrating holes.

摘要翻译： 本发明提供一种场发射显示器，其包括：阴极部分，包括行信号线和条形形式的列信号线，允许在衬底上执行矩阵寻址，以及由行信号线和列信号线限定的像素， 每个像素具有场发射器和控制器件，其控制场致发射器，其中两个端子至少连接到行信号线和列信号线，一个端子连接到场发射器; 具有阳极电极的阳极部分和与阳极电极连接的荧光体; 以及栅极部分，具有具有多个穿透孔的金属网，以及形成在所述金属网的至少一个区域上的电介质层，其中所述栅极部分设置在所述阴极部分和所述阳极部分之间， 电介质层形成为面向阴极部分并且允许从场发射器发射的电子经由穿透孔与磷光体碰撞。

公开(公告)号：US08409935B2

公开(公告)日：2013-04-02

申请号：US13590768

申请日：2012-08-21

申请人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyoung Ik Cho

发明人： Min Ki Ryu ,  Chi Sun Hwang ,  Chun Won Byun ,  Hye Yong Chu ,  Kyoung Ik Cho

IPC分类号： H01L21/00

CPC分类号： H01L29/66742 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/7869

摘要： A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel.

摘要翻译： 一种制造透明晶体管的方法，所述透明晶体管包括形成在所述基板上的基板，源极和漏极，每个具有下透明层，金属层和上透明层的多层结构，在所述源极和漏极之间形成的沟道 电极和与通道对准的栅电极。 下透明层或上透明层由与通道相同的透明半导体层形成。

公开(公告)号：US20100243994A1

公开(公告)日：2010-09-30

申请号：US12555986

申请日：2009-09-09

申请人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Woon Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

发明人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Woon Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

IPC分类号： H01L27/115 ,  H01L51/10 ,  H01L29/12 ,  H01L21/8246

CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

公开(公告)号：US20100006837A1

公开(公告)日：2010-01-14

申请号：US12496558

申请日：2009-07-01

申请人： Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

发明人： Doo Hee Cho ,  Sang Hee Park ,  Chi Sun Hwang ,  Hye Yong Chu ,  Kyoung Ik Cho ,  Shin Hyuk Yang ,  Chun Won Byun ,  Eun Suk Park ,  Oh Sang Kwon ,  Min Ki Ryu ,  Jae Heon Shin ,  Woo Seok Cheong ,  Sung Mook Chung ,  Jeong Ik Lee

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01B1/08

CPC分类号： H01L29/7869 ,  C23C14/08 ,  H01L29/247

摘要： Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process.

摘要翻译： 提供了一种用于氧化物半导体薄膜的组合物，使用该组合物的场效应晶体管和制造场效应晶体管的方法。 该组合物包括氧化铝，氧化锌，氧化铟和氧化锡。 由组合物形成的薄膜是非晶相。 具有由组合物形成的有源层的场效应晶体管可以具有改进的电特性并通过低温工艺制造。

公开(公告)号：US20120225500A1

公开(公告)日：2012-09-06

申请号：US13469558

申请日：2012-05-11

申请人： Sung Min YOON ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

发明人： Sung Min YOON ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

IPC分类号： H01L51/40

CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

公开(公告)号：US08198625B2

公开(公告)日：2012-06-12

申请号：US12555986

申请日：2009-09-09

申请人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

发明人： Sung Min Yoon ,  Shin Hyuk Yang ,  Soon Won Jung ,  Seung Youl Kang ,  Doo Hee Cho ,  Chun Won Byun ,  Chi Sun Hwang ,  Byoung Gon Yu ,  Kyoung Ik Cho

IPC分类号： H01L35/24

CPC分类号： H01L21/28291 ,  H01L29/78391 ,  H01L29/7869

摘要： Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.

摘要翻译： 提供了一种透明非易失性存储器薄膜晶体管（TFT）及其制造方法。 存储TFT包括设置在透明基板上的源极和漏极。 透明半导体薄层设置在源电极和漏电极之间，并且透明基板设置在源极和漏极之间。 有机铁电薄层设置在透明半导体薄层上。 栅电极与透明半导体薄层对准地设置在有机铁电薄层上。 因此，透明非易失性存储器TFT采用有机铁电薄层，氧化物半导体薄层和设置在有机铁电薄层之上和之下的辅助绝缘层，从而能够低成本地制造能够低的透明非易失性存储器件 温度过程。

公开(公告)号：US20110266542A1

公开(公告)日：2011-11-03

申请号：US13094933

申请日：2011-04-27

申请人： Min Ki RYU ,  Sang Hee Park ,  Chi Sun Hwang ,  Kyoung Ik Cho

发明人： Min Ki RYU ,  Sang Hee Park ,  Chi Sun Hwang ,  Kyoung Ik Cho

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L27/124 ,  H01L27/1225 ,  H01L29/78648

摘要： Provided are a semiconductor device including a dual gate transistor and a method of fabricating the same. The semiconductor device includes a lower gate electrode, an upper gate electrode on the lower gate electrode, a contact plug interposed between the lower gate electrode and the upper gate electrode, and connecting the lower gate electrode to the upper gate electrode, and a functional electrode spaced apart from the upper gate electrode and formed at the same height as the upper gate electrode. The dual gate transistor exhibiting high field effect mobility is applied to the semiconductor device, so that characteristics of the semiconductor device can be improved. In particular, since no additional mask or deposition process is necessary, a large-area high-definition semiconductor device can be mass-produced with neither an increase in process cost nor a decrease in yield.

摘要翻译： 提供一种包括双栅晶体管的半导体器件及其制造方法。 半导体器件包括下栅极电极，下栅电极上的上栅电极，插入在下栅电极和上栅电极之间的接触插塞，并将下栅电极连接到上栅电极，功能电极 与上栅电极间隔开并形成与上栅电极相同的高度。 表现出高场效应迁移率的双栅极晶体管被施加到半导体器件，从而可以提高半导体器件的特性。 特别是，由于不需要附加的掩模或沉积工艺，所以大面积的高分辨率半导体器件既可以增加工艺成本也不会降低产量。