公开(公告)号：US20130146794A1

公开(公告)日：2013-06-13

申请号：US13404567

申请日：2012-02-24

申请人： Chien-An Chen ,  Chien-Wei Wu

发明人： Chien-An Chen ,  Chien-Wei Wu

IPC分类号： F16K31/06 ,  F16K11/07

CPC分类号： F16K31/088 ,  F16K3/26 ,  F16K5/0414 ,  F16K5/0442 ,  Y10T137/8671

摘要： A magnetic valve and a fluid supply system using the same are provided. The fluid supply system includes a flow channel and the magnetic valve. The magnetic valve penetrates through a pipe wall of the flow channel, and includes a driving unit, a first magnet and a second magnet, a cover plate, a first and second spools. A first leaning portion of the first spool is disposed at one end of a first sheath portion. The first sheath portion has a first outlet opening. The second magnet is disposed on a surface of the first leaning portion facing to the cover plate. The second spool sleeves the first spool and has a second outlet opening. The first spool rotates relative to the second spool through a magnetic force to control an overlapping area of the first and second outlet openings, so as to control a flow rate.

摘要翻译： 提供一种电磁阀和使用其的流体供给系统。 流体供应系统包括流动通道和电磁阀。 磁阀穿过流道的管壁，并包括驱动单元，第一磁体和第二磁体，盖板，第一和第二线轴。 第一线轴的第一倾斜部分设置在第一护套部分的一端。 第一护套部分具有第一出口开口。 第二磁体设置在面向盖板的第一倾斜部分的表面上。 第二卷轴套在第一卷轴上并具有第二出口开口。 第一卷轴通过磁力相对于第二卷轴旋转，以控制第一和第二出口的重叠区域，以便控制流速。

公开(公告)号：US09273793B2

公开(公告)日：2016-03-01

申请号：US13404567

申请日：2012-02-24

申请人： Chien-An Chen ,  Chien-Wei Wu

发明人： Chien-An Chen ,  Chien-Wei Wu

IPC分类号： F16K3/26 ,  F16K5/04 ,  F16K31/08

CPC分类号： F16K31/088 ,  F16K3/26 ,  F16K5/0414 ,  F16K5/0442 ,  Y10T137/8671

摘要： A magnetic valve and a fluid supply system using the same are provided. The fluid supply system includes a flow channel and the magnetic valve. The magnetic valve penetrates through a pipe wall of the flow channel, and includes a driving unit, a first magnet and a second magnet, a cover plate, a first and second spools. A first leaning portion of the first spool is disposed at one end of a first sheath portion. The first sheath portion has a first outlet opening. The second magnet is disposed on a surface of the first leaning portion facing to the cover plate. The second spool sleeves the first spool and has a second outlet opening. The first spool rotates relative to the second spool through a magnetic force to control an overlapping area of the first and second outlet openings, so as to control a flow rate.

摘要翻译： 提供一种电磁阀和使用其的流体供给系统。 流体供应系统包括流动通道和电磁阀。 磁阀穿过流道的管壁，并包括驱动单元，第一磁体和第二磁体，盖板，第一和第二线轴。 第一线轴的第一倾斜部分设置在第一护套部分的一端。 第一护套部分具有第一出口开口。 第二磁体设置在面向盖板的第一倾斜部分的表面上。 第二卷轴套在第一卷轴上并具有第二出口开口。 第一卷轴通过磁力相对于第二卷轴旋转，以控制第一和第二出口的重叠区域，以便控制流速。

公开(公告)号：US20080067148A1

公开(公告)日：2008-03-20

申请号：US11670424

申请日：2007-02-02

申请人： Sai-Chang Liu ,  Cheng-Tzu Yang ,  Chien-Wei Wu ,  Shuo-Wei Liang

发明人： Sai-Chang Liu ,  Cheng-Tzu Yang ,  Chien-Wei Wu ,  Shuo-Wei Liang

IPC分类号： B44C1/22 ,  C23F1/00

CPC分类号： C23F1/18 ,  C23F1/26 ,  H01L21/32134 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908

摘要： An etchant for patterning composite layer containing copper is provided. The etchant includes peracetic acid being about 5% to 40% by weight and serving as a major component, a peracetic acid stabilizer being about 5% to 15% by weight, an organic acid being about 5% to 10% by weight, an inorganic acid being about 5% to 15% by weight, a salt being about 8% to 15% by weight, which are based on the total weight of the etchant.

摘要翻译： 提供了含有铜的图案化复合层的蚀刻剂。 蚀刻剂包括约5重量％至40重量％的过乙酸和用作主要组分，过乙酸稳定剂为约5重量％至15重量％，有机酸为约5重量％至10重量％，无机 酸为约5重量％至15重量％，盐为约8重量％至15重量％，基于蚀刻剂的总重量计。

公开(公告)号：US07045817B2

公开(公告)日：2006-05-16

申请号：US10964611

申请日：2004-10-15

申请人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

发明人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

IPC分类号： H01L31/0376 ,  H01L29/04 ,  G02F27/12 ,  G02F1/1343 ,  G02F1/136

CPC分类号： H01L29/78669 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765

摘要： The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

摘要翻译： 本发明提供一种能够防止TFT制造中发生金属扩散的TFT电极结构及其制造方法，从而降低由金属离子扩散引起的化学气相沉积工艺的污染风险。 透明像素电极形成在栅电极金属之后，使得像素透明电极可以用作阻挡层，以防止在高温下从栅电极金属到相邻绝缘层或有源层的金属扩散。 此外，用于形成透明像素电极的方法是低温物理气相沉积工艺，其受处理环境影响较小，并且透明像素电极是不受金属扩散影响的导电层。

公开(公告)号：US20090093093A1

公开(公告)日：2009-04-09

申请号：US11954082

申请日：2007-12-11

申请人： Sai-Chang Liu ,  Cheng-Tzu Yang ,  Chien-Wei Wu

发明人： Sai-Chang Liu ,  Cheng-Tzu Yang ,  Chien-Wei Wu

IPC分类号： H01L21/04 ,  H01L21/70 ,  H01L21/768

CPC分类号： H01L29/66765 ,  H01L21/28525 ,  H01L29/41733 ,  H01L29/458

摘要： A method for fabricating a thin film transistor (TFT) is provided. A substrate having a gate, a dielectric layer, a channel layer and an ohmic contact layer formed thereon is provided. Next, a metal layer is formed over the substrate covering the ohmic contact layer. Next, the metal layer and the ohmic contact layer are simultaneously etched by a wet etching process to form a source/drain and expose the channel layer. Because the wet etching process can be used to selectively etch the ohmic contact layer, damage to the underlying channel layer may be negligible. Thus, the reliability of the device may be promoted. Furthermore, the process may be simplified, the production yield and the throughput of TFT may be increased.

摘要翻译： 提供一种制造薄膜晶体管（TFT）的方法。 提供了具有形成在其上的栅极，电介质层，沟道层和欧姆接触层的衬底。 接下来，在覆盖欧姆接触层的基板上形成金属层。 接下来，通过湿蚀刻工艺同时蚀刻金属层和欧姆接触层，以形成源极/漏极并暴露沟道层。 因为湿蚀刻工艺可以用于选择性地蚀刻欧姆接触层，所以对下面的通道层的损坏可以忽略不计。 因此，可以提高装置的可靠性。 此外，可以简化该过程，可以提高TFT的产量和产量。

公开(公告)号：US20060202203A1

公开(公告)日：2006-09-14

申请号：US11375336

申请日：2006-03-15

申请人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

发明人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

IPC分类号： H01L29/04

CPC分类号： H01L29/78669 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765

摘要： The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

公开(公告)号：US20050274947A1

公开(公告)日：2005-12-15

申请号：US10964611

申请日：2004-10-15

申请人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

发明人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L29/78669 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765

摘要： The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.

摘要翻译： 本发明提供一种能够防止TFT制造中发生金属扩散的TFT电极结构及其制造方法，从而降低由金属离子扩散引起的化学气相沉积工艺的污染风险。 透明像素电极形成在栅电极金属之后，使得像素透明电极可以用作阻挡层，以防止在高温下从栅电极金属到相邻绝缘层或有源层的金属扩散。 此外，用于形成透明像素电极的方法是低温物理气相沉积工艺，其受处理环境影响较小，并且透明像素电极是不受金属扩散影响的导电层。

公开(公告)号：US07785941B2

公开(公告)日：2010-08-31

申请号：US11954082

申请日：2007-12-11

申请人： Sai-Chang Liu ,  Cheng-Tzu Yang ,  Chien-Wei Wu

发明人： Sai-Chang Liu ,  Cheng-Tzu Yang ,  Chien-Wei Wu

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/66765 ,  H01L21/28525 ,  H01L29/41733 ,  H01L29/458

摘要： A method for fabricating a thin film transistor (TFT) is provided. A substrate having a gate, a dielectric layer, a channel layer and an ohmic contact layer formed thereon is provided. Next, a metal layer is formed over the substrate covering the ohmic contact layer. Next, the metal layer and the ohmic contact layer are simultaneously etched by a wet etching process to form a source/drain and expose the channel layer. Because the wet etching process can be used to selectively etch the ohmic contact layer, damage to the underlying channel layer may be negligible. Thus, the reliability of the device may be promoted. Furthermore, the process may be simplified, the production yield and the throughput of TFT may be increased.

摘要翻译： 提供一种制造薄膜晶体管（TFT）的方法。 提供了具有形成在其上的栅极，电介质层，沟道层和欧姆接触层的衬底。 接下来，在覆盖欧姆接触层的基板上形成金属层。 接下来，通过湿蚀刻工艺同时蚀刻金属层和欧姆接触层，以形成源极/漏极并暴露沟道层。 因为湿蚀刻工艺可以用于选择性地蚀刻欧姆接触层，所以对下面的通道层的损坏可以忽略不计。 因此，可以提高装置的可靠性。 此外，可以简化该过程，可以提高TFT的产量和产量。

公开(公告)号：US07632694B2

公开(公告)日：2009-12-15

申请号：US11375336

申请日：2006-03-15

申请人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

发明人： Cheng-Chung Chen ,  Yu-Chang Sun ,  Yi-Hsun Huang ,  Chien-Wei Wu ,  Shuo-Wei Liang ,  Chia-Hsiang Chen ,  Chi-Shen Lee ,  Chai-Yuan Sheu ,  Yu-Chi Lee ,  Te-Ming Chu ,  Cheng-Hsing Chen

IPC分类号： H01L21/00

CPC分类号： H01L29/78669 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66765

摘要： A manufacturing method for a TFT electrode which is implemented to prevent metal ion diffusion to an adjacent insulating layer during fabrication. The method includes, in the order recited, providing a substrate; forming a first metal layer on the substrate which is comprised of one of a single metal layer structure or a multiple metal layer structure; performing a photolithography and etching process on the first metal layer to form a gate electrode of the TFT electrode; forming a transparent conducting electrode on the first metal layer to cover at least the gate electrode and prevent metal ion diffusion during fabrication, the transparent conducting electrode being comprised of one of indium tin oxide, indium zinc oxide, ZnO or an organic material; and forming a pixel electrode which functions as a barrier to prevent metal ion diffusion during fabrication by performing a photolithography and etching process on the transparent conducting electrode.

摘要翻译： 一种用于在制造期间防止金属离子扩散到相邻绝缘层的TFT电极的制造方法。 该方法按照所述的顺序包括提供衬底; 在所述基板上形成由单金属层结构或多金属层结构中的一个构成的第一金属层; 对所述第一金属层进行光刻和蚀刻处理以形成所述TFT电极的栅电极; 在所述第一金属层上形成透明导电电极以至少覆盖所述栅电极，并且在制造期间防止金属离子扩散，所述透明导电电极由铟锡氧化物，氧化铟锌，Zn​​O或有机材料中的一种构成; 并且通过对透明导电电极进行光刻和蚀刻处理，形成用作阻挡层的像素电极，以防止在制造期间的金属离子扩散。

公开(公告)号：US07566404B2

公开(公告)日：2009-07-28

申请号：US11670424

申请日：2007-02-02

申请人： Sai-Chang Liu ,  Cheng-Tzu Yang ,  Chien-Wei Wu ,  Shuo-Wei Liang

发明人： Sai-Chang Liu ,  Cheng-Tzu Yang ,  Chien-Wei Wu ,  Shuo-Wei Liang

IPC分类号： C03C15/00

CPC分类号： C23F1/18 ,  C23F1/26 ,  H01L21/32134 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908

摘要： An etchant for patterning composite layer containing copper is provided. The etchant includes peracetic acid being about 5% to 40% by weight and serving as a major component, a peracetic acid stabilizer being about 5% to 15% by weight, an organic acid being about 5% to 10% by weight, an inorganic acid being about 5% to 15% by weight, a salt being about 8% to 15% by weight, which are based on the total weight of the etchant.

摘要翻译： 提供了一种用于图案化复合层含有铜的蚀刻剂。 蚀刻剂包括约5重量％至40重量％的过乙酸和用作主要组分，过乙酸稳定剂为约5重量％至15重量％，有机酸为约5重量％至10重量％，无机 酸为约5重量％至15重量％，盐为约8重量％至15重量％，基于蚀刻剂的总重量计。