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24 条记录 (耗时 0.028 秒)

    Integrated circuit and fabricating method thereof
    4.
    发明授权
    Integrated circuit and fabricating method thereof 有权
    集成电路及其制造方法

    公开(公告)号：US08587078B2

    公开(公告)日：2013-11-19

    申请号：US12754610

    申请日：2010-04-06

    申请人： Chien-Hsin Huang ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Tzung-Han Tan ,  Hui-Min Wu ,  Tzung-I Su

    发明人： Chien-Hsin Huang ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Tzung-Han Tan ,  Hui-Min Wu ,  Tzung-I Su

    IPC分类号： H01L29/84 ,  H01L21/02

    CPC分类号： H01L27/0617 ,  B81B2201/0257 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0742 ,  B81C2203/0771

    摘要： A fabricating method of integrated circuit is provided. During the fabricating process of an interconnecting structure of the integrated circuit, a micro electromechanical system (MENS) diaphragm is formed between two adjacent dielectric layers of the interconnecting structure. The method of forming the MENS diaphragm includes the following steps. Firstly, a plurality of first openings is formed within any dielectric layer to expose corresponding conductive materials of the interconnecting structure. Secondly, a bottom insulating layer is formed on the dielectric layer and filling into the first openings. Third, portions of the bottom insulating layer located in the first openings are removed to form at least a first trench for exposing the corresponding conductive materials. Then, a first electrode layer and a top insulating layer are sequentially formed on the bottom insulating layer, and the first electrode layer filled into the first trench and is electrically connected to the conductive materials.

    摘要翻译： 提供了集成电路的制造方法。 在集成电路的互连结构的制造过程中，在互连结构的两个相邻电介质层之间形成微机电系统（MENS）隔膜。 形成MENS隔膜的方法包括以下步骤。 首先，在任何电介质层内形成多个第一开口以暴露互连结构的相应的导电材料。 其次，在电介质层上形成底部绝缘层并填充到第一开口中。 第三，去除位于第一开口中的底部绝缘层的部分，以形成用于暴露相应导电材料的至少第一沟槽。 然后，第一电极层和顶部绝缘层依次形成在底部绝缘层上，第一电极层被填充到第一沟槽中并与导电材料电连接。

    Integrated Circuit and Fabricating Method thereof
    5.
    发明申请
    Integrated Circuit and Fabricating Method thereof 有权
    集成电路及其制造方法

    公开(公告)号：US20110241137A1

    公开(公告)日：2011-10-06

    申请号：US12754610

    申请日：2010-04-06

    申请人： Chien-Hsin HUANG ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Tzung-Han Tan ,  Hui-Min Wu ,  Tzung-I Su

    发明人： Chien-Hsin HUANG ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Tzung-Han Tan ,  Hui-Min Wu ,  Tzung-I Su

    IPC分类号： H01L29/84 ,  H01L21/02

    CPC分类号： H01L27/0617 ,  B81B2201/0257 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0742 ,  B81C2203/0771

    摘要： A fabricating method of integrated circuit is provided. During the fabricating process of an interconnecting structure of the integrated circuit, a micro electromechanical system (MENS) diaphragm is formed between two adjacent dielectric layers of the interconnecting structure. The method of forming the MENS diaphragm includes the following steps. Firstly, a plurality of first openings is formed within any dielectric layer to expose corresponding conductive materials of the interconnecting structure. Secondly, a bottom insulating layer is formed on the dielectric layer and filling into the first openings. Third, portions of the bottom insulating layer located in the first openings are removed to form at least a first trench for exposing the corresponding conductive materials. Then, a first electrode layer and a top insulating layer are sequentially formed on the bottom insulating layer, and the first electrode layer filled into the first trench and is electrically connected to the conductive materials.

    摘要翻译： 提供了集成电路的制造方法。 在集成电路的互连结构的制造过程中，在互连结构的两个相邻电介质层之间形成微机电系统（MENS）隔膜。 形成MENS隔膜的方法包括以下步骤。 首先，在任何电介质层内形成多个第一开口以暴露互连结构的相应的导电材料。 其次，在电介质层上形成底部绝缘层并填充到第一开口中。 第三，去除位于第一开口中的底部绝缘层的部分，以形成用于暴露相应导电材料的至少第一沟槽。 然后，第一电极层和顶部绝缘层依次形成在底部绝缘层上，第一电极层被填充到第一沟槽中并与导电材料电连接。

    Wafer level package of MEMS microphone and manufacturing method thereof
    6.
    发明授权
    Wafer level package of MEMS microphone and manufacturing method thereof 有权
    MEMS麦克风晶圆级封装及其制造方法

    公开(公告)号：US08368153B2

    公开(公告)日：2013-02-05

    申请号：US12756982

    申请日：2010-04-08

    申请人： Chien-Hsin Huang ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su

    发明人： Chien-Hsin Huang ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su

    IPC分类号： H01L29/84 ,  H01L21/30

    CPC分类号： B81B7/0061 ,  B81B2201/0257 ,  B81C2203/0136 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2924/1461 ,  H04R2201/003 ,  Y10T29/49005 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A wafer level package of micro electromechanical system (MEMS) microphone includes a substrate, a number of dielectric layers stacked on the substrate, a MEMS diaphragm, a number of supporting rings and a protective layer. The MEMS diaphragm is disposed between two adjacent dielectric layers. A first chamber is between the MEMS diaphragm and the substrate. The supporting rings are disposed in some dielectric layers and stacked with each other. An inner diameter of the lower supporting ring is greater than that of the upper supporting ring. The protective layer is disposed on the upmost supporting ring and covers the MEMS diaphragm. A second chamber is between the MEMS diaphragm and the protective layer. The protective layer defines a number of first through holes for exposing the MEMS diaphragm. The wafer level package of MEMS microphone has an advantage of low cost.

    摘要翻译： 微机电系统（MEMS）麦克风的晶片级封装包括基板，堆叠在基板上的多个电介质层，MEMS隔膜，多个支撑环和保护层。 MEMS隔膜设置在两个相邻的电介质层之间。 第一腔室位于MEMS隔膜和衬底之间。 支撑环设置在一些电介质层中并彼此堆叠。 下支撑环的内径大于上支撑环的内径。 保护层设置在最上面的支撑环上并覆盖MEMS隔膜。 第二腔室位于MEMS隔膜和保护层之间。 保护层限定许多用于暴露MEMS隔膜的第一通孔。 MEMS麦克风的晶圆级封装具有成本低的优点。

    Wafer Level Package of MEMS Microphone and Manufacturing Method thereof
    7.
    发明申请
    Wafer Level Package of MEMS Microphone and Manufacturing Method thereof 有权
    MEMS麦克风晶圆级封装及其制造方法

    公开(公告)号：US20110248364A1

    公开(公告)日：2011-10-13

    申请号：US12756982

    申请日：2010-04-08

    申请人： Chien-Hsin Huang ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su

    发明人： Chien-Hsin Huang ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Hui-Min Wu ,  Tzung-I Su

    IPC分类号： H01L29/84 ,  H01L21/30

    CPC分类号： B81B7/0061 ,  B81B2201/0257 ,  B81C2203/0136 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2924/1461 ,  H04R2201/003 ,  Y10T29/49005 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A wafer level package of micro electromechanical system (MEMS) microphone includes a substrate, a number of dielectric layers stacked on the substrate, a MEMS diaphragm, a number of supporting rings and a protective layer. The MEMS diaphragm is disposed between two adjacent dielectric layers. A first chamber is between the MEMS diaphragm and the substrate. The supporting rings are disposed in some dielectric layers and stacked with each other. An inner diameter of the lower supporting ring is greater than that of the upper supporting ring. The protective layer is disposed on the upmost supporting ring and covers the MEMS diaphragm. A second chamber is between the MEMS diaphragm and the protective layer. The protective layer defines a number of first through holes for exposing the MEMS diaphragm. The wafer level package of MEMS microphone has an advantage of low cost.

    摘要翻译： 微机电系统（MEMS）麦克风的晶片级封装包括基板，堆叠在基板上的多个电介质层，MEMS隔膜，多个支撑环和保护层。 MEMS隔膜设置在两个相邻的电介质层之间。 第一腔室位于MEMS隔膜和衬底之间。 支撑环设置在一些电介质层中并彼此堆叠。 下支撑环的内径大于上支撑环的内径。 保护层设置在最上面的支撑环上并覆盖MEMS隔膜。 第二腔室位于MEMS隔膜和保护层之间。 保护层限定许多用于暴露MEMS隔膜的第一通孔。 MEMS麦克风的晶圆级封装具有成本低的优点。

    Image-sensing module of image capture apparatus and manufacturing method thereof
    9.
    发明授权
    Image-sensing module of image capture apparatus and manufacturing method thereof 有权
    图像捕获装置的图像感测模块及其制造方法

    公开(公告)号：US07659501B2

    公开(公告)日：2010-02-09

    申请号：US11693743

    申请日：2007-03-30

    申请人： Min-Chih Hsuan ,  Tsung-Hsi Ko ,  Li-Che Chen

    发明人： Min-Chih Hsuan ,  Tsung-Hsi Ko ,  Li-Che Chen

    IPC分类号： H01J3/14 ,  H01J5/16

    CPC分类号： H04N5/2254 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14685 ,  H01L2924/0002 ,  H04N5/2257 ,  H01L2924/00

    摘要： An image-sensing module is provided. The image-sensing module includes a substrate, a plurality of image-sensing units, a plurality of micro lenses and a focusing unit. The image-sensing units are disposed on the substrate and the micro lenses are respectively disposed on one of the image-sensing units. The focusing unit is disposed on the substrate and covers the micro lenses. A top surface of the focusing unit is a curved surface. Furthermore, a method of manufacturing the image-sensing module and an image capture apparatus are provided.

    摘要翻译： 提供图像感测模块。 图像感测模块包括基板，多个图像感测单元，多个微透镜和聚焦单元。 图像感测单元设置在基板上，微透镜分别设置在一个图像感测单元上。 聚焦单元设置在基板上并覆盖微透镜。 聚焦单元的顶表面是曲面。 此外，提供了制造图像感测模块和图像捕获装置的方法。