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    Integrated circuit and fabricating method thereof
    3.
    发明授权
    Integrated circuit and fabricating method thereof 有权
    集成电路及其制造方法

    公开(公告)号：US08587078B2

    公开(公告)日：2013-11-19

    申请号：US12754610

    申请日：2010-04-06

    申请人： Chien-Hsin Huang ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Tzung-Han Tan ,  Hui-Min Wu ,  Tzung-I Su

    发明人： Chien-Hsin Huang ,  Li-Che Chen ,  Ming-I Wang ,  Bang-Chiang Lan ,  Tzung-Han Tan ,  Hui-Min Wu ,  Tzung-I Su

    IPC分类号： H01L29/84 ,  H01L21/02

    CPC分类号： H01L27/0617 ,  B81B2201/0257 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0742 ,  B81C2203/0771

    摘要： A fabricating method of integrated circuit is provided. During the fabricating process of an interconnecting structure of the integrated circuit, a micro electromechanical system (MENS) diaphragm is formed between two adjacent dielectric layers of the interconnecting structure. The method of forming the MENS diaphragm includes the following steps. Firstly, a plurality of first openings is formed within any dielectric layer to expose corresponding conductive materials of the interconnecting structure. Secondly, a bottom insulating layer is formed on the dielectric layer and filling into the first openings. Third, portions of the bottom insulating layer located in the first openings are removed to form at least a first trench for exposing the corresponding conductive materials. Then, a first electrode layer and a top insulating layer are sequentially formed on the bottom insulating layer, and the first electrode layer filled into the first trench and is electrically connected to the conductive materials.

    摘要翻译： 提供了集成电路的制造方法。 在集成电路的互连结构的制造过程中，在互连结构的两个相邻电介质层之间形成微机电系统（MENS）隔膜。 形成MENS隔膜的方法包括以下步骤。 首先，在任何电介质层内形成多个第一开口以暴露互连结构的相应的导电材料。 其次，在电介质层上形成底部绝缘层并填充到第一开口中。 第三，去除位于第一开口中的底部绝缘层的部分，以形成用于暴露相应导电材料的至少第一沟槽。 然后，第一电极层和顶部绝缘层依次形成在底部绝缘层上，第一电极层被填充到第一沟槽中并与导电材料电连接。

    FOCUSING MEMBER AND OPTOELECTRONIC DEVICE
    7.
    发明申请
    FOCUSING MEMBER AND OPTOELECTRONIC DEVICE 有权
    聚焦会员和光电设备

    公开(公告)号：US20110097033A1

    公开(公告)日：2011-04-28

    申请号：US12605891

    申请日：2009-10-26

    申请人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Hui-Min Wu ,  Chien-Hsin Huang ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

    发明人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Hui-Min Wu ,  Chien-Hsin Huang ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

    IPC分类号： G02B6/12 ,  G02B1/10 ,  G02B6/32

    CPC分类号： G02B6/12004 ,  G02B6/305

    摘要： A focusing member and an optoelectronic device having the same are provided. The focusing member includes multiple levels of conductive plugs and multiple levels of conductive layers that together form an inversed half-boat shape. The optoelectronic device includes a bottom layer, an optical waveguide above the bottom layer, a dielectric layer covering the optical waveguide, and the above focusing member disposed at an edge of the optoelectronic device and located in the dielectric layer above the optical waveguide. A wider end of the inversed half-boat shape of the focusing member faces the outside of the optoelectronic device. The refractive indexes of the bottom layer and the dielectric layer are smaller than that of the optical waveguide.

    摘要翻译： 提供聚焦构件和具有该聚焦构件的光电子器件。 聚焦构件包括多个级别的导电插塞和多层导电层，这些导电层一起形成反转的半舟形状。 光电子器件包括底层，底层上方的光波导，覆盖光波导的电介质层，以及设置在光电子器件的边缘并位于光波导上方的电介质层中的上述聚焦构件。 聚焦构件的反转半舟形的较宽端面向光电器件的外侧。 底层和电介质层的折射率小于光波导的折射率。

    Optoelectronic device and method of forming the same
    9.
    发明授权
    Optoelectronic device and method of forming the same 有权
    光电器件及其形成方法

    公开(公告)号：US08139907B2

    公开(公告)日：2012-03-20

    申请号：US12648861

    申请日：2009-12-29

    申请人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Chien-Hsin Huang ,  Hui-Min Wu ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

    发明人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Chien-Hsin Huang ,  Hui-Min Wu ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

    IPC分类号： G02B6/12

    CPC分类号： G02B6/12004 ,  G02B2006/12061

    摘要： An optoelectronic device including a substrate, a half-boat-shaped material layer, a deep trench isolation structure, and an optical waveguide is provided. The substrate has a first area. The half-boat-shaped material layer is disposed in the substrate within the first area. The refractive index of the half-boat-shaped material layer is lower than that of the substrate. A top surface of the half-boat-shaped material layer is coplanar with the surface of the substrate. The deep trench isolation structure is disposed in the substrate within the first area and located at one side of a bow portion of the half-boat-shaped material layer. The optical waveguide is disposed on the substrate within the first area. The optical waveguide overlaps a portion of the deep trench isolation structure and at least a portion of the half-boat-shaped material layer.

    摘要翻译： 提供了包括基板，半舟形材料层，深沟槽隔离结构和光波导的光电子器件。 衬底具有第一区域。 半船形材料层设置在第一区域内的基板内。 半舟状材料层的折射率低于基板的折射率。 半舟状材料层的上表面与基板的表面共面。 深沟槽隔离结构设置在第一区域内的基板中，并且位于半舟形材料层的弓形部分的一侧。 光波导路设置在第一区域内的基板上。 光波导与深沟槽隔离结构的一部分和半舟形材料层的至少一部分重叠。

    OPTOELECTRONIC DEVICE AND METHOD OF FORMING THE SAME
    10.
    发明申请
    OPTOELECTRONIC DEVICE AND METHOD OF FORMING THE SAME 有权
    光电装置及其形成方法

    公开(公告)号：US20110158581A1

    公开(公告)日：2011-06-30

    申请号：US12648861

    申请日：2009-12-29

    申请人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Chien-Hsin Huang ,  Hui-Min Wu ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

    发明人： Tzung-I Su ,  Ming-I Wang ,  Bang-Chiang Lan ,  Te-Kan Liao ,  Chao-An Su ,  Chien-Hsin Huang ,  Hui-Min Wu ,  Tzung-Han Tan ,  Min Chen ,  Meng-Jia Lin

    IPC分类号： G02B6/12 ,  H01L21/30

    CPC分类号： G02B6/12004 ,  G02B2006/12061

    摘要： An optoelectronic device including a substrate, a half-boat-shaped material layer, a deep trench isolation structure, and an optical waveguide is provided. The substrate has a first area. The half-boat-shaped material layer is disposed in the substrate within the first area. The refractive index of the half-boat-shaped material layer is lower than that of the substrate. A top surface of the half-boat-shaped material layer is coplanar with the surface of the substrate. The deep trench isolation structure is disposed in the substrate within the first area and located at one side of a bow portion of the half-boat-shaped material layer. The optical waveguide is disposed on the substrate within the first area. The optical waveguide overlaps a portion of the deep trench isolation structure and at least a portion of the half-boat-shaped material layer.

    摘要翻译： 提供了包括基板，半舟形材料层，深沟槽隔离结构和光波导的光电子器件。 衬底具有第一区域。 半船形材料层设置在第一区域内的基板内。 半舟状材料层的折射率低于基板的折射率。 半舟状材料层的上表面与基板的表面共面。 深沟槽隔离结构设置在第一区域内的基板中，并且位于半舟形材料层的弓形部分的一侧。 光波导路设置在第一区域内的基板上。 光波导与深沟槽隔离结构的一部分和半舟形材料层的至少一部分重叠。