公开(公告)号：US20050150671A1

公开(公告)日：2005-07-14

申请号：US10829586

申请日：2004-04-21

申请人： Chii-Ron Kuo ,  Jia-Ruey Wu ,  Chia-Yang Chang ,  Ta-Wei Wang ,  Jung-Huang Liao

发明人： Chii-Ron Kuo ,  Jia-Ruey Wu ,  Chia-Yang Chang ,  Ta-Wei Wang ,  Jung-Huang Liao

IPC分类号： B25B21/00 ,  F01D15/06 ,  F01D17/16 ,  E21B3/00

CPC分类号： B25B21/00 ,  F01D15/06 ,  F01D17/165 ,  F05D2240/12

摘要： A turbine motor for a pneumatic tool, comprising a casing, a rotor and an axis. Compressed air enters the casing through an inlet and is directed towards blades of the rotor in a radial direction, so that torque is exerted on the axis. The blades of the rotors are to a large part hit by compressed air, each for an extended time, so that high effectivity and good efficiency result, allowing for operation at high speed and under high load.

摘要翻译： 一种用于气动工具的涡轮马达，包括壳体，转子和轴线。 压缩空气通过入口进入壳体并沿径向被引导到转子的叶片，使得扭矩施加在轴上。 转子的叶片大部分受到压缩空气的冲击，延长了时间，从而实现了高效率和高效率，从而允许在高速和高负载下运行。

公开(公告)号：US06637209B2

公开(公告)日：2003-10-28

申请号：US10026447

申请日：2001-12-27

申请人： Chii-Rong Kuo ,  Ta-Wei Wang ,  Jia-Ruey Wu ,  Ling-Chia Weng ,  Tao-Pang Hsiung ,  Chia-Yang Chang

发明人： Chii-Rong Kuo ,  Ta-Wei Wang ,  Jia-Ruey Wu ,  Ling-Chia Weng ,  Tao-Pang Hsiung ,  Chia-Yang Chang

IPC分类号： F02C316

CPC分类号： F01D5/03 ,  F01D5/025 ,  F02C3/08 ,  F02C3/16

摘要： An engine core structure for a gas turbine engine includes an outer annular shaft body, a turbine rotor body, turbine rotor blades radially connected between the outer annular shaft body and the turbine rotor body to hold the turbine rotor body in the rear section of the outer annular shaft body, the outer annular shaft body including slots through which compressed air passes in a radially inward direction, and a can type combustor mounted in a receiving clamber inside the outer annular shaft body to enlarge the diameter of the core shaft, to avoid vibration due to resonance, to save space, to eliminate dissipation of heat, and to improve the thermal efficiency of the gas turbine engine.

摘要翻译： 用于燃气涡轮发动机的发动机芯结构包括外环形轴体，涡轮转子体，径向连接在外环形轴体和涡轮转子体之间的涡轮转子叶片，以将涡轮转子体保持在外部的后部 环形轴体，外环形轴体包括压缩空气沿径向向内的方向通过的狭槽，以及安装在外环形轴体内的接收室中的罐式燃烧器，以增大芯轴的直径，以避免振动 由于共振，节省空间，消除散热，提高燃气轮机的热效率。

公开(公告)号：US06711889B2

公开(公告)日：2004-03-30

申请号：US10183595

申请日：2002-06-28

申请人： Chii-Rong Kuo ,  Ta-Wei Wang ,  Jia-Ruey Wu ,  Hsin-Yi Shih ,  Tao-Pang Hsiung ,  Chia-Yang Chang

发明人： Chii-Rong Kuo ,  Ta-Wei Wang ,  Jia-Ruey Wu ,  Hsin-Yi Shih ,  Tao-Pang Hsiung ,  Chia-Yang Chang

IPC分类号： F02C710

CPC分类号： F23R3/06 ,  F02C3/14 ,  F02C7/08 ,  F23C2900/03001 ,  F23R3/005 ,  F28D7/103 ,  F28D9/04 ,  Y10S165/398

摘要： A recuperated gas turbine engine. The gas turbine engine includes a heat exchanger, and gas turbine (including compressor, can-type combustor and turbine). The heat exchanger includes a compressed air passageway and a turbine exhaust gas passageway adjacent to each other within the casing which extend spirally throughout the heat exchanger and towards an inner cylindrical chamber in which the combustor is positioned approximately to the center of the casing. Improved engine fuel efficiency is achieved by preheating the compressed air before it reaches the combustor with the higher-temperature exhaust gas. A can-type combustor is used for alleviating heat-dissipation issues to improve efficiency of the combustion. A concentric back-to-back rotor arrangement significantly shortens the length of a conventional engine turbine rotor which improves on the operational stability of a gas turbine engine.

摘要翻译： 一种恢复燃气涡轮发动机。 燃气涡轮发动机包括热交换器和燃气轮机（包括压缩机，罐式燃烧器和涡轮机）。 热交换器包括在壳体内彼此相邻的压缩空气通道和涡轮机废气通道，其在整个热交换器中螺旋地延伸并且朝向内部圆柱形室，其中燃烧器大致位于壳体的中心。 通过在压缩空气到达具有较高温度排气的燃烧器之前对其进行预热来实现提高发动机燃料效率。 罐型燃烧器用于减轻散热问题以提高燃烧效率。 同心的背对背转子装置显着地缩短了常规发动机涡轮转子的长度，其改进了燃气涡轮发动机的操作稳定性。

公开(公告)号：US09070774B2

公开(公告)日：2015-06-30

申请号：US13336191

申请日：2011-12-23

申请人： Ta-Wei Wang ,  Chih-Sheng Chang

发明人： Ta-Wei Wang ,  Chih-Sheng Chang

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L29/06 ,  H01L29/66

CPC分类号： H01L29/78603 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78654

摘要： A semiconductor device includes a gate stack; an air-gap under the gate stack; a semiconductor layer vertically between the gate stack and the air-gap; and a first dielectric layer underlying and adjoining the semiconductor layer. The first dielectric layer is exposed to the air-gap.

摘要翻译： 半导体器件包括栅极堆叠; 门叠下的气隙; 垂直于栅极堆叠和气隙之间的半导体层; 以及在半导体层下面和毗邻的第一介电层。 第一介电层暴露于气隙。

公开(公告)号：US08154051B2

公开(公告)日：2012-04-10

申请号：US11511622

申请日：2006-08-29

申请人： Chih-Hao Wang ,  Ching-Wei Tsai ,  Ta-Wei Wang

发明人： Chih-Hao Wang ,  Ching-Wei Tsai ,  Ta-Wei Wang

IPC分类号： H01L29/66

CPC分类号： H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66628 ,  H01L29/66636

摘要： A strained channel transistor can be provided by combining a stressor positioned in the channel region with stressors positioned on opposite sides of the channel region. This produces increased strain in the channel region, resulting in correspondingly enhanced transistor performance.

摘要翻译： 可以通过将位于通道区域中的应力器与位于通道区域的相对侧上的应力源组合来提供应变通道晶体管。 这在沟道区域中产生增加的应变，从而相应地增强了晶体管的性能。

公开(公告)号：US20090090935A1

公开(公告)日：2009-04-09

申请号：US12330961

申请日：2008-12-09

申请人： Chih-Hao Wang ,  Shang-Chih Chen ,  Ching-Wei Tsai ,  Ta-Wei Wang ,  Pang-Yen Tsai

发明人： Chih-Hao Wang ,  Shang-Chih Chen ,  Ching-Wei Tsai ,  Ta-Wei Wang ,  Pang-Yen Tsai

IPC分类号： H01L29/78

CPC分类号： H01L21/823807 ,  H01L21/823814 ,  H01L29/1054 ,  H01L29/66553 ,  H01L29/66636

摘要： A semiconductor device includes a gate, which comprises a gate electrode and a gate dielectric underlying the gate electrode, a spacer formed on a sidewall of the gate electrode and the gate dielectric, a buffer layer having a first portion underlying the gate dielectric and the spacer and a second portion adjacent the spacer wherein the top surface of the second portion of the buffer layer is recessed below the top surface of the first portion of the buffer layer, and a source/drain region substantially aligned with the spacer. The buffer layer preferably has a greater lattice constant than an underlying semiconductor substrate. The semiconductor device may further include a semiconductor-capping layer between the buffer layer and the gate dielectric, wherein the semiconductor-capping layer has a smaller lattice constant then the buffer layer.

摘要翻译： 半导体器件包括栅极，栅极包括位于栅极电极下方的栅极电极和栅极电介质，形成在栅极电极和栅极电介质的侧壁上的间隔物，缓冲层，其具有位于栅极电介质下方的第一部分和间隔物 以及与间隔物相邻的第二部分，其中缓冲层的第二部分的顶表面在缓冲层的第一部分的顶表面下方凹陷，并且基本上与间隔物对准的源极/漏极区域。 缓冲层优选具有比下面的半导体衬底更大的晶格常数。 半导体器件还可以包括在缓冲层和栅极电介质之间的半导体覆盖层，其中半导体覆盖层具有比缓冲层更小的晶格常数。

公开(公告)号：US20060194387A1

公开(公告)日：2006-08-31

申请号：US11066062

申请日：2005-02-25

申请人： Chih-Hao Wang ,  Ta-Wei Wang

发明人： Chih-Hao Wang ,  Ta-Wei Wang

IPC分类号： H01L21/336 ,  H01L29/76

CPC分类号： H01L29/1054 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7843

摘要： A preferred embodiment of the invention comprises a semiconductor device having stress in the source/drain channel. The device comprises a substrate having a lattice constant greater than or equal to silicon and a first layer on the substrate, wherein the first layer has a lattice constant greater than the substrate. Alternative embodiments include a second layer formed on the first layer. The second layer has a lattice constant less than the first layer. Preferably, the second layer underlies a gate electrode and at least a portion of a sidewall spacer. Still other embodiments include a recess for inducing stress in the source/drain channel.

摘要翻译： 本发明的优选实施例包括在源/漏通道中具有应力的半导体器件。 该器件包括具有大于或等于硅的晶格常数的衬底和衬底上的第一层，其中第一层具有大于衬底的晶格常数。 替代实施例包括形成在第一层上的第二层。 第二层具有小于第一层的晶格常数。 优选地，第二层位于栅电极和侧壁间隔物的至少一部分之下。 其他实施例包括用于在源/漏通道中引发应力的凹部。

公开(公告)号：US08900980B2

公开(公告)日：2014-12-02

申请号：US11361249

申请日：2006-02-24

申请人： Chih-Hao Wang ,  Shih-Hsieng Huang ,  Ta-Wei Wang

发明人： Chih-Hao Wang ,  Shih-Hsieng Huang ,  Ta-Wei Wang

IPC分类号： H01L21/00 ,  H01L29/78 ,  H01L21/265 ,  H01L29/66

CPC分类号： H01L29/7848 ,  H01L21/26506 ,  H01L29/165 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： MOSFET transistors having localized stressors for improving carrier mobility are provided. Embodiments of the invention comprise a gate electrode formed over a substrate, a carrier channel region in the substrate under the gate electrode, and source/drain regions on either side of the carrier channel region. The source/drain regions include an embedded stressor having a lattice constant different from the substrate. In a preferred embodiment, the substrate is silicon and the embedded stressor is SiGe. Implanting a portion of the source/drain regions with Ge forms the embedded stressor. Implanting carbon into the source/drain regions and annealing the substrate after implanting the carbon suppresses dislocation formation, thereby improving device performance.

摘要翻译： 提供了具有用于改善载流子迁移率的局部应力源的MOSFET晶体管。 本发明的实施例包括形成在衬底上的栅极电极，栅电极下的衬底中的载流子通道区域和载流子通道区域两侧的源极/漏极区域。 源极/漏极区域包括具有不同于衬底的晶格常数的嵌入应力源。 在优选实施例中，衬底是硅，并且嵌入的应力器是SiGe。 用Ge埋设一部分源极/漏极区域形成嵌入的应力源。 在植入碳后将碳植入源极/漏极区域并退火衬底抑制位错形成，从而提高器件性能。

公开(公告)号：US20110042953A1

公开(公告)日：2011-02-24

申请号：US12790916

申请日：2010-05-31

申请人： Chi-Rong Kuo ,  Chih-Wei Yen ,  Ta-Wei Wang ,  Yuh-Ren Lee ,  Buo-Hua Hsu

发明人： Chi-Rong Kuo ,  Chih-Wei Yen ,  Ta-Wei Wang ,  Yuh-Ren Lee ,  Buo-Hua Hsu

IPC分类号： F01D15/10 ,  H02K7/18

CPC分类号： H02K7/1823 ,  F01D15/10 ,  F03B13/00 ,  F05B2220/20 ,  F05B2220/602 ,  F05D2220/20 ,  F05D2220/62 ,  H02K5/22 ,  Y02B10/50

摘要： This disclosure relates to a turbine generator set, in which an axial-flow turbine and a generator are embedded inside a flow channel. In an exemplary embodiment of the disclosure, the turbine generator set comprises: a flow channel being provided with a front end as an inlet duct and a back end as an outlet duct; an axial-flow turbine, being single-stage or multi-stage, capable of transforming thermal and pressure energies of a working fluid inside the flow channel into rotational energy; and a generator, comprising a rotor and a stator, being capable of transforming the rotational energy into electricity. A shaft of the turbine and a shaft of the generator can be coupled directly or by way of a gear set. Electricity is transmitted from the flow channel by way of a bunch of cables passing through the flow channel.

摘要翻译： 本公开涉及一种涡轮发电机组，其中轴流涡轮机和发电机被嵌入在流动通道内。 在本公开的示例性实施例中，涡轮发电机组包括：流动通道，其设置有作为入口管道的前端和作为出口管道的后端; 单级或多级的轴流涡轮机，其能够将流动通道内的工作流体的热能和压力能量转换成旋转能量; 以及包括转子和定子的发电机，其能够将旋转能量转换成电。 涡轮机的轴和发电机的轴可以直接或通过齿轮组联接。 电流通过一束通过流路的电缆从流路传输。

公开(公告)号：US07649233B2

公开(公告)日：2010-01-19

申请号：US11950467

申请日：2007-12-05

申请人： Chih-Hao Wang ,  Ching-Wei Tsai ,  Ta-Wei Wang

发明人： Chih-Hao Wang ,  Ching-Wei Tsai ,  Ta-Wei Wang

IPC分类号： H01L27/088

CPC分类号： H01L29/1054 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7843

摘要： A MOS transistor having a highly stressed channel region and a method for forming the same are provided. The method includes forming a first semiconductor plate over a semiconductor substrate, forming a second semiconductor plate on the first semiconductor plate wherein the first semiconductor plate has a substantially greater lattice constant than the second semiconductor plate, and forming a gate stack over the first and the second semiconductor plates. The first and the second semiconductor plates include extensions extending substantially beyond side edges of the gate stack. The method further includes forming a silicon-containing layer on the semiconductor substrate, preferably spaced apart from the first and the second semiconductor plates, forming a spacer, a LDD region and a source/drain region, and forming a silicide region and a contact etch stop layer. A high stress is developed in the channel region. Current crowding effects are reduced due to the raised silicide region.

摘要翻译： 提供具有高应力沟道区的MOS晶体管及其形成方法。 该方法包括在半导体衬底上形成第一半导体板，在第一半导体板上形成第二半导体板，其中第一半导体板具有比第二半导体板大得多的晶格常数，以及在第一半导体板上形成栅叠层 第二半导体板。 第一和第二半导体板包括基本上超过栅极堆叠的侧边缘延伸的延伸部。 该方法还包括在半导体衬底上形成优选与第一和第二半导体板隔开的含硅层，形成间隔物，LDD区和源极/漏极区，以及形成硅化物区和接触蚀刻 停止层。 在通道区域产生高应力。 由于硅化物区域的增加，电流拥挤效应降低。