公开(公告)号：US20130112914A1

公开(公告)日：2013-05-09

申请号：US13617160

申请日：2012-09-14

申请人： Choong-Ho HAN ,  Sang-Kyun KIM ,  Ye-Hwan KIM ,  Joon-Sang PARK ,  Jin-Woo BAE ,  Won-Jun LEE ,  Kyoung-Moon KANG ,  Jae-Dong LEE

发明人： Choong-Ho HAN ,  Sang-Kyun KIM ,  Ye-Hwan KIM ,  Joon-Sang PARK ,  Jin-Woo BAE ,  Won-Jun LEE ,  Kyoung-Moon KANG ,  Jae-Dong LEE

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09K3/1472 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

摘要： A slurry composition includes an abrasive agent, an oxidizing agent, and a first adsorption inhibitor including a polyethylene oxide copolymer. A method of manufacturing a phase change memory device may include providing a substrate including an interlayer insulating film having a trench and a phase change material layer on the interlayer insulating film filling the trench, and performing chemical mechanical polishing on the phase change material layer using the slurry composition to form a phase change material pattern layer.

摘要翻译： 浆料组合物包括研磨剂，氧化剂和包含聚环氧乙烷共聚物的第一吸附抑制剂。 制造相变存储器件的方法可以包括在填充沟槽的层间绝缘膜上提供包括具有沟槽和相变材料层的层间绝缘膜的衬底，并且使用相变材料层对相变材料层进行化学机械抛光 浆料组成以形成相变材料图案层。

公开(公告)号：US20150021513A1

公开(公告)日：2015-01-22

申请号：US14311857

申请日：2014-06-23

申请人： Yun-Jeong KIM ,  Sang-Kyun KIM ,  Kwang-Bok KIM ,  Ye-Hwan KIM ,  Jung-Sik CHOI ,  Choong-Ho HAN ,  Gi-Sik HONG

发明人： Yun-Jeong KIM ,  Sang-Kyun KIM ,  Kwang-Bok KIM ,  Ye-Hwan KIM ,  Jung-Sik CHOI ,  Choong-Ho HAN ,  Gi-Sik HONG

IPC分类号： C09K13/06 ,  C09K13/00

CPC分类号： H01L21/31058 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31055 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11582

摘要： A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.