公开(公告)号：US20150348798A1

公开(公告)日：2015-12-03

申请号：US14825846

申请日：2015-08-13

申请人： Yun-Jeong KIM ,  Sang-Kyun Kim ,  Kwang-Bok Kim ,  Ye-Hwan Kim ,  Jung-Sik Choi ,  Choong-Ho Han ,  Gi-Sik Hong

发明人： Yun-Jeong KIM ,  Sang-Kyun Kim ,  Kwang-Bok Kim ,  Ye-Hwan Kim ,  Jung-Sik Choi ,  Choong-Ho Han ,  Gi-Sik Hong

IPC分类号： H01L21/3105 ,  H01L27/115 ,  H01L21/311

CPC分类号： H01L21/31058 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31055 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11582

摘要： A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.

摘要翻译： 公开了一种用于抛光有机层的化学机械抛光（CMP）浆料组合物和使用其形成半导体器件的方法。 CMP浆料组合物可以包含0.001重量％至5重量％的氧化物抛光颗粒; 0.1至5重量％的氧化剂; 0〜5重量％的抛光调节剂; 0〜3重量％的表面活性剂; 0至3重量％的pH调节剂; 和79-99889重量％的去离子水。 使用CMP浆料组合物可以使无硅有机层相对于氧化物层以高于6:1的选择性进行抛光。

公开(公告)号：US09343326B2

公开(公告)日：2016-05-17

申请号：US14825846

申请日：2015-08-13

申请人： Yun-Jeong Kim ,  Sang-Kyun Kim ,  Kwang-Bok Kim ,  Ye-Hwan Kim ,  Jung-Sik Choi ,  Choong-Ho Han ,  Gi-Sik Hong

发明人： Yun-Jeong Kim ,  Sang-Kyun Kim ,  Kwang-Bok Kim ,  Ye-Hwan Kim ,  Jung-Sik Choi ,  Choong-Ho Han ,  Gi-Sik Hong

IPC分类号： H01L21/302 ,  H01L21/3105 ,  C09K3/14 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L27/115

CPC分类号： H01L21/31058 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31055 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11582

摘要： A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.

摘要翻译： 公开了一种用于抛光有机层的化学机械抛光（CMP）浆料组合物和使用其形成半导体器件的方法。 CMP浆料组合物可以包含0.001重量％至5重量％的氧化物抛光颗粒; 0.1至5重量％的氧化剂; 0〜5重量％的抛光调节剂; 0〜3重量％的表面活性剂; 0至3重量％的pH调节剂; 和79-99889重量％的去离子水。 使用CMP浆料组合物可以使无硅有机层相对于氧化物层以高于6:1的选择性进行抛光。

公开(公告)号：US20150021513A1

公开(公告)日：2015-01-22

申请号：US14311857

申请日：2014-06-23

申请人： Yun-Jeong KIM ,  Sang-Kyun KIM ,  Kwang-Bok KIM ,  Ye-Hwan KIM ,  Jung-Sik CHOI ,  Choong-Ho HAN ,  Gi-Sik HONG

发明人： Yun-Jeong KIM ,  Sang-Kyun KIM ,  Kwang-Bok KIM ,  Ye-Hwan KIM ,  Jung-Sik CHOI ,  Choong-Ho HAN ,  Gi-Sik HONG

IPC分类号： C09K13/06 ,  C09K13/00

CPC分类号： H01L21/31058 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31055 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11582

摘要： A chemical mechanical polishing (CMP) slurry composition for polishing an organic layer and a method of forming a semiconductor device using the same are disclosed. The CMP slurry composition may include from 0.001% to 5% by weight of oxide-polishing particles; from 0.1% to 5% by weight of an oxidant; from 0% to 5% by weight of a polishing regulator; from 0% to 3% by weight of a surfactant; from 0% to 3% by weight of a pH regulator; and from 79% to 99.889% by weight of deionized water. The use of the CMP slurry composition makes it possible to allow a silicon-free organic layer to be polished with a selectivity higher than 6:1 with respect to an oxide layer.

公开(公告)号：US20100003897A1

公开(公告)日：2010-01-07

申请号：US12496937

申请日：2009-07-02

申请人： Sang-Kyun Kim ,  Nam-Soo Kim ,  Jong-Woo Kim ,  Choong-Ho Han

发明人： Sang-Kyun Kim ,  Nam-Soo Kim ,  Jong-Woo Kim ,  Choong-Ho Han

IPC分类号： B24B1/00 ,  B24B7/22

CPC分类号： C09G1/02 ,  B24B37/044

摘要： In a slurry composition for chemical mechanical polishing, a method of preparing the slurry composition and a method of polishing an object using the slurry composition, the slurry composition includes a cerium oxide abrasive particle having a rare earth element other than cerium as a dopant, and an aqueous medium for dispersing the cerium oxide abrasive particle. The cerium oxide abrasive particle doped with the rare earth element may have an enhanced fracture strength as being compared with a pure cerium oxide abrasive particle, and also may reduce an amount of large or agglomerated particles and generation of a scratch on a polished surface of an object.

摘要翻译： 在用于化学机械抛光的浆料组合物中，制备浆料组合物的方法和使用该浆料组合物抛光物体的方法，该浆料组合物包括具有铈以外的稀土元素作为掺杂剂的氧化铈磨料颗粒，以及 用于分散氧化铈磨料颗粒的水性介质。 掺杂有稀土元素的氧化铈磨料颗粒可以与纯氧化铈磨料颗粒相比具有增强的断裂强度，并且还可以减少大的或团聚的颗粒的量和在抛光表面上产生划痕 目的。

公开(公告)号：US20130112914A1

公开(公告)日：2013-05-09

申请号：US13617160

申请日：2012-09-14

申请人： Choong-Ho HAN ,  Sang-Kyun KIM ,  Ye-Hwan KIM ,  Joon-Sang PARK ,  Jin-Woo BAE ,  Won-Jun LEE ,  Kyoung-Moon KANG ,  Jae-Dong LEE

发明人： Choong-Ho HAN ,  Sang-Kyun KIM ,  Ye-Hwan KIM ,  Joon-Sang PARK ,  Jin-Woo BAE ,  Won-Jun LEE ,  Kyoung-Moon KANG ,  Jae-Dong LEE

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09K3/1472 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

摘要： A slurry composition includes an abrasive agent, an oxidizing agent, and a first adsorption inhibitor including a polyethylene oxide copolymer. A method of manufacturing a phase change memory device may include providing a substrate including an interlayer insulating film having a trench and a phase change material layer on the interlayer insulating film filling the trench, and performing chemical mechanical polishing on the phase change material layer using the slurry composition to form a phase change material pattern layer.

摘要翻译： 浆料组合物包括研磨剂，氧化剂和包含聚环氧乙烷共聚物的第一吸附抑制剂。 制造相变存储器件的方法可以包括在填充沟槽的层间绝缘膜上提供包括具有沟槽和相变材料层的层间绝缘膜的衬底，并且使用相变材料层对相变材料层进行化学机械抛光 浆料组成以形成相变材料图案层。