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    FILM BULK ACOUSTIC RESONATOR WITH MULTI-LAYERS OF DIFFERENT PIEZOELECTRIC MATERIALS AND METHOD OF MAKING
    2.
    发明申请
    FILM BULK ACOUSTIC RESONATOR WITH MULTI-LAYERS OF DIFFERENT PIEZOELECTRIC MATERIALS AND METHOD OF MAKING 有权
    具有多层不同压电材料的薄膜聚合声波谐振器及其制造方法

    公开(公告)号：US20130193808A1

    公开(公告)日：2013-08-01

    申请号：US13362321

    申请日：2012-01-31

    申请人： Chris FENG ,  John CHOY ,  Kevin J. GRANNEN ,  Phil NIKKEL ,  Tom YEH

    发明人： Chris FENG ,  John CHOY ,  Kevin J. GRANNEN ,  Phil NIKKEL ,  Tom YEH

    IPC分类号： H01L41/04 ,  H01L41/22 ,  H01L41/047

    CPC分类号： H03H9/173 ,  H03H9/02149 ,  H03H9/171 ,  H03H9/178 ,  H03H9/585 ,  Y10T29/42

    摘要： A thin film bulk acoustic resonator (FBAR) includes a first electrode, a first piezoelectric layer having a first c-axis orientation and on the first electrode, a second piezoelectric layer having a second c-axis orientation over the first piezoelectric layer, and a second electrode on the second piezoelectric layer. The first and second piezoelectric layers are made of respective different piezoelectric materials. The FBAR can be set to have different resonance frequencies by selecting the first and second c-axis orientations to be respectively the same or different. The high and low frequency range of the FBAR can thus be extended.

    摘要翻译： 薄膜体声波谐振器（FBAR）包括第一电极，具有第一c轴取向的第一压电层，在第一电极上具有在第一压电层上具有第二c轴取向的第二压电层，以及 第二电极在第二压电层上。 第一和第二压电层由各自的不同压电材料制成。 通过选择第一和第二c轴取向分别相同或不同，可以将FBAR设置为具有不同的谐振频率。 因此可以扩展FBAR的高低频范围。

    SOLID MOUNT BULK ACOUSTIC WAVE RESONATOR STRUCTURE COMPRISING A BRIDGE
    3.
    发明申请
    SOLID MOUNT BULK ACOUSTIC WAVE RESONATOR STRUCTURE COMPRISING A BRIDGE 有权
    固定安装的包括桥梁的大声波声波谐振器结构

    公开(公告)号：US20120161902A1

    公开(公告)日：2012-06-28

    申请号：US13337458

    申请日：2011-12-27

    申请人： Chris FENG ,  John CHOY ,  Phil NIKKEL

    发明人： Chris FENG ,  John CHOY ,  Phil NIKKEL

    IPC分类号： H03H9/15

    CPC分类号： H03H9/132 ,  H03H9/02118 ,  H03H9/02149 ,  H03H9/175

    摘要： A solid mount bulk acoustic wave resonator, comprises a first electrode; a second electrode; a piezoelectric layer disposed between the first and second electrodes; and an acoustic reflector comprising a plurality of layers and disposed beneath the first electrode, the second electrode and the piezoelectric layer, An overlap of the acoustic reflector, the first electrode, the second electrode and the piezoelectric layer defines an active area of the acoustic resonator, and the piezoelectric layer extends over an edge of the first electrode. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator. The bridge overlaps a portion of the first electrode.

    摘要翻译： 固体体积声波谐振器，包括第一电极; 第二电极; 设置在所述第一和第二电极之间的压电层; 以及包括多个层并且设置在第一电极，第二电极和压电层下方的声反射器。声反射器，第一电极，第二电极和压电层的重叠限定声谐振器的有源区域 并且压电层在第一电极的边缘上延伸。 声谐振器还包括与声谐振器的有源区域的终端相邻的桥。 桥与第一电极的一部分重叠。

    ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE
    5.
    发明申请
    ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE 审中-公开
    包含桥梁的声学谐振器结构

    公开(公告)号：US20120206015A1

    公开(公告)日：2012-08-16

    申请号：US13445268

    申请日：2012-04-12

    申请人： John CHOY ,  Chris FENG ,  Phil NIKKEL

    发明人： John CHOY ,  Chris FENG ,  Phil NIKKEL

    IPC分类号： H01L41/08 ,  B05D5/12

    CPC分类号： H03H9/02149 ,  H03H9/02118 ,  H03H9/132 ,  H03H9/173

    摘要： An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

    摘要翻译： 声谐振器包括第一电极，第二电极和设置在第一和第二电极之间的压电层。 声谐振器还包括设置在第一电极，第二电极和压电层下方的反射元件。 反射元件，第一电极，第二电极和压电层的重叠包括声谐振器的有效区域。 声谐振器还包括与声谐振器的有源区域的终端相邻的桥。

    ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE
    6.
    发明申请
    ACOUSTIC RESONATOR STRUCTURE COMPRISING A BRIDGE 审中-公开

    公开(公告)号：US20120194297A1

    公开(公告)日：2012-08-02

    申请号：US13443113

    申请日：2012-04-10

    申请人： John CHOY ,  Chris FENG ,  Phil NIKKEL

    发明人： John CHOY ,  Chris FENG ,  Phil NIKKEL

    IPC分类号： H03H9/15 ,  H01L41/04

    CPC分类号： H03H9/02149 ,  H03H9/02118 ,  H03H9/132 ,  H03H9/173

    摘要： An acoustic resonator comprises a first electrode a second electrode and a piezoelectric layer disposed between the first and second electrodes. The acoustic resonator further comprises a reflective element disposed beneath the first electrode, the second electrode and the piezoelectric layer. An overlap of the reflective element, the first electrode, the second electrode and the piezoelectric layer comprises an active area of the acoustic resonator. The acoustic resonator also comprises a bridge adjacent to a termination of the active area of the acoustic resonator.

    TRANSDUCER DEVICES HAVING DIFFERENT FREQUENCIES BASED ON LAYER THICKNESSES AND METHOD OF FABRICATING THE SAME
    8.
    发明申请
    TRANSDUCER DEVICES HAVING DIFFERENT FREQUENCIES BASED ON LAYER THICKNESSES AND METHOD OF FABRICATING THE SAME 有权
    具有基于层厚度的不同频率的传感器件及其制造方法

    公开(公告)号：US20110291207A1

    公开(公告)日：2011-12-01

    申请号：US12789685

    申请日：2010-05-28

    申请人： David MARTIN ,  John CHOY

    发明人： David MARTIN ,  John CHOY

    IPC分类号： H01L29/84 ,  H01L21/66

    CPC分类号： H01L41/253 ,  G10K9/125 ,  H01L27/20 ,  Y10T29/42

    摘要： A transducer array on a common substrate includes a membrane and first and second transducer devices. The membrane is formed on the common substrate, and includes a lower layer and an upper layer. The first transducer device includes a first resonator stack formed on at least the lower layer in a first portion of the membrane, the upper layer having a first thickness in the first portion of the membrane. The second transducer device includes a second resonator stack formed on at least the lower layer in a second portion of the membrane, the upper layer having a second thickness in the second portion of the membrane, where the second thickness is different from the first thickness, such that a first resonant frequency of the first transducer device is different from a second resonant frequency of the second transducer device.

    摘要翻译： 公共衬底上的换能器阵列包括膜和第一和第二换能器装置。 膜形成在公共基板上，并且包括下层和上层。 第一换能器装置包括形成在膜的第一部分中的至少下层上的第一谐振器叠层，上层在膜的第一部分具有第一厚度。 第二换能器装置包括形成在膜的第二部分中的至少下层上的第二谐振器叠层，上层在膜的第二部分具有第二厚度，其中第二厚度不同于第一厚度， 使得第一换能器装置的第一谐振频率与第二换能器装置的第二共振频率不同。