公开(公告)号：US20150235799A1

公开(公告)日：2015-08-20

申请号：US14185651

申请日：2014-02-20

申请人： Chris Jozwiak ,  Cheol Hwan Park ,  Kenneth Gotlieb ,  Steven Gwon Sheng Louie ,  Zahid Hussain ,  Alessandra Lanzara

发明人： Chris Jozwiak ,  Cheol Hwan Park ,  Kenneth Gotlieb ,  Steven Gwon Sheng Louie ,  Zahid Hussain ,  Alessandra Lanzara

IPC分类号： H01J1/34 ,  H01J43/18 ,  H01J40/16 ,  H01J1/36

CPC分类号： H01L29/66007 ,  G21K1/16 ,  H01J1/34 ,  H01L29/66984

摘要： One or more embodiments relate generally to the field of photoelectron spin and, more specifically, to a method and system for creating a controllable spin-polarized electron source. One preferred embodiment of the invention generally comprises: method for creating a controllable spin-polarized electron source comprising the following steps: providing one or more materials, the one or more materials having at least one surface and a material layer adjacent to said surface, wherein said surface comprises highly spin-polarized surface electrons, wherein the direction and spin of the surface electrons are locked together; providing at least one incident light capable of stimulating photoemission of said surface electrons; wherein the photon polarization of said incident light is tunable; and inducing photoemission of the surface electron states.

摘要翻译： 一个或多个实施方案一般涉及光电子自旋的领域，更具体地涉及用于产生可控自旋极化电子源的方法和系统。 本发明的一个优选实施方案通常包括：用于产生可控自旋极化电子源的方法，包括以下步骤：提供一种或多种材料，所述一种或多种材料具有至少一个表面和与所述表面相邻的材料层，其中 所述表面包括高度自旋极化的表面电子，其中表面电子的方向和自旋锁定在一起; 提供能够刺激所述表面电子的光电子发射的至少一个入射光; 其中所述入射光的光子偏振是可调的; 并诱导表面电子态的光电子发射。

公开(公告)号：US08470668B2

公开(公告)日：2013-06-25

申请号：US12979926

申请日：2010-12-28

申请人： Ho Jin Cho ,  Cheol Hwan Park ,  Dong Kyun Lee

发明人： Ho Jin Cho ,  Cheol Hwan Park ,  Dong Kyun Lee

IPC分类号： H01L21/8242

CPC分类号： H01L27/10894 ,  H01L27/10852 ,  H01L27/10855 ,  H01L28/90

摘要： An embodiment of the invention includes a pillar type capacitor where a pillar is formed over an upper portion of a storage node contact. A bottom electrode is formed over sidewalls of the pillar, and a dielectric film is formed over pillar and the bottom electrode. A top electrode is then formed over the upper portion of the dielectric film.

摘要翻译： 本发明的实施例包括柱形电容器，其中柱形成在存储节点接触件的上部上。 底部电极形成在支柱的侧壁上，电介质膜形成在支柱和底部电极之上。 然后在电介质膜的上部上形成顶部电极。

公开(公告)号：US07985645B2

公开(公告)日：2011-07-26

申请号：US12649610

申请日：2009-12-30

申请人： Cheol Hwan Park ,  Ho Jin Cho ,  Dong Kyun Lee

发明人： Cheol Hwan Park ,  Ho Jin Cho ,  Dong Kyun Lee

IPC分类号： H01L21/8242

CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10894

摘要： A semiconductor device having a high aspect cylindrical capacitor and a method for fabricating the same is presented. The high aspect cylindrical type capacitor is a stable structure which is not prone to causing bunker defects and losses in a guard ring. The semiconductor device includes the cylindrical type capacitor structure, a storage node oxide, a guard ring hole, a conductive layer, and a capping oxide. The cylindrical type capacitor structure in a cell region includes a cylindrical type lower electrode, a dielectric and an upper electrode. The storage node oxide is in a peripheral region over the semiconductor substrate. The conductive layer coating the guard ring hole. The guard ring hole at a boundary of the peripheral region that adjoins the cell region over the semiconductor substrate. The capping oxide partially fills in a part of the conductive layer. The gapfill film filling in the rest of the conductive layer.

摘要翻译： 提出了具有高方位圆柱形电容器的半导体器件及其制造方法。 高档圆柱型电容器是一种稳定的结构，不容易造成保护环中的掩体缺陷和损失。 半导体器件包括圆柱形电容器结构，存储节点氧化物，保护环孔，导电层和封盖氧化物。 单元区域中的圆柱型电容器结构包括圆筒形下电极，电介质和上电极。 存储节点氧化物位于半导体衬底上的周边区域中。 导电层涂覆保护环孔。 在与半导体基板上的单元区域相邻的周边区域的边界处的保护环孔。 覆盖氧化物部分地填充导电层的一部分。 间隙填充膜填充在导电层的其余部分。

公开(公告)号：US08476688B2

公开(公告)日：2013-07-02

申请号：US12244115

申请日：2008-10-02

申请人： Ho Jin Cho ,  Cheol Hwan Park ,  Jae Wook Seo ,  Jong Kuk Kim

发明人： Ho Jin Cho ,  Cheol Hwan Park ,  Jae Wook Seo ,  Jong Kuk Kim

IPC分类号： H01L31/113

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： A semiconductor device that prevents the leaning of storage node when forming a capacitor having high capacitance includes a plurality of cylinder-shaped storage nodes formed over a semiconductor substrate; and support patterns formed to fix the storage nodes in the form of an ‘L’ or a ‘+’ when viewed from the top. This semiconductor device having support patterns in the form of an ‘L’ or a ‘+’ reduces stress on the storage nodes when subsequently forming a dielectric layer and plate nodes that prevents the capacitors from leaking.

摘要翻译： 当形成具有高电容的电容器时，防止存储节点倾斜的半导体器件包括形成在半导体衬底上的多个圆柱形存储节点; 以及当从顶部观察时，形成为以“L”或“+”的形式固定存储节点的支撑图案。 具有“L”或“+”形式的支撑图案的这种半导体器件随后形成介电层并且防止电容器泄漏的板节点减小了存储节点上的应力。

公开(公告)号：US06825518B2

公开(公告)日：2004-11-30

申请号：US10331532

申请日：2002-12-30

申请人： Cheol Hwan Park ,  Dong Su Park ,  Tae Hyeok Lee ,  Sang Ho Woo

发明人： Cheol Hwan Park ,  Dong Su Park ,  Tae Hyeok Lee ,  Sang Ho Woo

IPC分类号： H01L2972

CPC分类号： H01L21/28202 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/3143

摘要： A capacitor in a semiconductor device and a method for fabricating the same is disclosed. Disclosed the method for fabricating the capacitor in a semiconductor device comprises the steps of: forming a lower electrode made of doped silicon materials on a semiconductor substrate; depositing a thin silicon nitride layer on the lower electrode; forming a silicon oxynitride layer on the surface of the silicon nitride layer through oxidation of the silicon nitride layer; depositing a dielectric layer on the silicon oxynitride layer; and forming an upper electrode on the dielectric layer. According to the method, after the deposition of the silicon nitride layer on the dielectric layer, oxidation treatment of the resultant structure is performed and the dielectric layer is formed on the oxidized silicon nitride layer, thereby improving the interface characteristics between the lower electrode and the dielectric layer and resulting in a decrease of the leakage current and an increase of the breakdown voltage of the capacitor in the semiconductor device.

公开(公告)号：US08148764B2

公开(公告)日：2012-04-03

申请号：US13185873

申请日：2011-07-19

申请人： Cheol Hwan Park ,  Ho Jin Cho ,  Dong Kyun Lee

发明人： Cheol Hwan Park ,  Ho Jin Cho ,  Dong Kyun Lee

IPC分类号： H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10894

摘要： A semiconductor device having a high aspect cylindrical capacitor and a method for fabricating the same is presented. The high aspect cylindrical type capacitor is a stable structure which is not prone to causing bunker defects and losses in a guard ring. The semiconductor device includes the cylindrical type capacitor structure, a storage node oxide, a guard ring hole, a conducive layer, and a capping oxide. The cylindrical type capacitor structure in a cell region includes a cylindrical type lower electrode, a dielectric and an upper electrode. The storage node oxide is in a peripheral region over the semiconductor substrate. The conductive layer coating the guard ring hole. The guard ring hole at a boundary of the peripheral region that adjoins the cell region over the semiconductor substrate. The capping oxide partially fills in a part of the conductive layer. The gapfill film filling in the rest of the conductive layer.

摘要翻译： 提出了具有高方位圆柱形电容器的半导体器件及其制造方法。 高档圆柱型电容器是一种稳定的结构，不容易造成保护环中的掩体缺陷和损失。 半导体器件包括圆柱形电容器结构，存储节点氧化物，保护环孔，导电层和封盖氧化物。 单元区域中的圆柱型电容器结构包括圆筒形下电极，电介质和上电极。 存储节点氧化物位于半导体衬底上的周边区域中。 导电层涂覆保护环孔。 在与半导体基板上的单元区域相邻的周边区域的边界处的保护环孔。 覆盖氧化物部分地填充导电层的一部分。 间隙填充膜填充在导电层的其余部分。

公开(公告)号：US07723183B2

公开(公告)日：2010-05-25

申请号：US12499248

申请日：2009-07-08

申请人： Ho Jin Cho ,  Cheol Hwan Park ,  Jae Soo Kim ,  Dong Kyun Lee

发明人： Ho Jin Cho ,  Cheol Hwan Park ,  Jae Soo Kim ,  Dong Kyun Lee

IPC分类号： H01L21/02

CPC分类号： H01L28/65 ,  H01L27/10852 ,  H01L28/91

摘要： A capacitor is made by forming a buffer oxide layer, an etching stop layer, and a mold insulation layer over a semiconductor substrate having a storage node contact plug. The mold insulation layer and the etching stop layer are etched to form a hole in an upper portion of the storage node contact plug. A tapering layer is deposited over the mold insulation layer including the hole. The tapering layer and the buffer oxide layer are etched back so that the tapering layer is remained only at the upper end portion of the etched hole. A metal storage node layer formed on the etched hole over the remaining tapering layer. The mold insulation layer and the remaining tapering layer are removed to form a cylindrical storage node having a tapered upper end. A dielectric layer and a plate node are formed over the storage node.

摘要翻译： 通过在具有存储节点接触插塞的半导体衬底上形成缓冲氧化物层，蚀刻停止层和模具绝缘层来制造电容器。 蚀刻模具绝缘层和蚀刻停止层，以在存储节点接触插塞的上部形成孔。 在包括孔的模具绝缘层上沉积渐缩层。 锥形层和缓冲氧化物层被回蚀刻，使得锥形层仅保留在蚀刻孔的上端部。 在剩余的锥形层上形成在蚀刻孔上的金属储存节点层。 去除模具绝缘层和剩余的锥形层以形成具有锥形上端的圆柱形存储节点。 在存储节点上形成介电层和板状节点。

公开(公告)号：US06962856B2

公开(公告)日：2005-11-08

申请号：US10600332

申请日：2003-06-23

申请人： Cheol Hwan Park ,  Dong Su Park ,  Tae Hyeok Lee ,  Sang Ho Woo

发明人： Cheol Hwan Park ,  Dong Su Park ,  Tae Hyeok Lee ,  Sang Ho Woo

IPC分类号： H01L21/76 ,  H01L21/762

CPC分类号： H01L21/76232

摘要： A method for forming a device isolation film of a semiconductor device, wherein an annealing process is performed on the oxide film using NH3 prior to the deposition of a liner nitride film and after the deposition of a thermal oxide film on a sidewall of a trench to nitridate the oxide film is disclosed. The method comprises the steps of: (a) sequentially forming a pad oxide film and a pad nitride film on a semiconductor substrate; (b) selectively etching the pad nitride film to form a nitride film pattern; (c) etching the pad oxide film and a predetermined thickness of the semiconductor substrate using the nitride film pattern as a hard mask to form a trench; (d) forming a thermal oxide film on the surface of the trench; (e) performing an annealing process under NH3 atmosphere to form an oxide nitride film on the surface of the thermal oxide film; (f) forming a liner nitride film on the entire surface; (g) forming an oxide film filling the trench on the entire surface; and (h) performing a planarization process.

摘要翻译： 一种用于形成半导体器件的器件隔离膜的方法，其中在沉积衬垫氮化物膜之前和在氧化物膜沉积到沟槽的侧壁上之后，使用NH 3对氧化物膜进行退火处理， 公开了氧化膜的氮化。 该方法包括以下步骤：（a）在半导体衬底上依次形成衬垫氧化膜和衬垫氮化物膜; （b）选择性地蚀刻衬垫氮化物膜以形成氮化物膜图案; （c）使用氮化物膜图案作为硬掩模来蚀刻焊盘氧化膜和预定厚度的半导体衬底以形成沟槽; （d）在沟槽的表面上形成热氧化膜; （e）在NH 3气氛下进行退火处理以在所述热氧化膜的表面上形成氧化物氮化物膜; （f）在整个表面上形成衬里氮化物膜; （g）在整个表面上形成填充沟槽的氧化膜; 和（h）进行平面化处理。

公开(公告)号：US07906419B2

公开(公告)日：2011-03-15

申请号：US12275332

申请日：2008-11-21

申请人： Jae Soo Kim ,  Cheol Hwan Park ,  Ho Jin Cho

发明人： Jae Soo Kim ,  Cheol Hwan Park ,  Ho Jin Cho

IPC分类号： H01L21/3205

CPC分类号： H01L21/268 ,  H01L27/10876 ,  H01L29/4236 ,  H01L29/66621

摘要： A laser annealing method for manufacturing a semiconductor device is presented. The method includes at least two forming steps and one annealing step. The first forming steps includes forming gates on a semiconductor substrate. The second forming step includes forming an insulation layer on the semiconductor substrate and on the gates. The annealing step includes annealing the insulation layer using electromagnetic radiation emitted from a laser.

摘要翻译： 提出了一种用于制造半导体器件的激光退火方法。 该方法包括至少两个形成步骤和一个退火步骤。 第一形成步骤包括在半导体衬底上形成栅极。 第二形成步骤包括在半导体衬底上和栅极上形成绝缘层。 退火步骤包括使用从激光发射的电磁辐射对绝缘层进行退火。

公开(公告)号：US20080081430A1

公开(公告)日：2008-04-03

申请号：US11758507

申请日：2007-06-05

申请人： Cheol Hwan Park ,  Dong-Su Park ,  Eun A. Lee ,  Hye Jin Seo

发明人： Cheol Hwan Park ,  Dong-Su Park ,  Eun A. Lee ,  Hye Jin Seo

IPC分类号： H01L21/24

CPC分类号： H01L28/91 ,  H01L27/10852

摘要： A method for forming a capacitor in a semiconductor device is disclosed. The method includes forming a storage node electrode on a semiconductor substrate, forming a dielectric layer having a high dielectric constant on the storage node electrode, depositing a plate electrode on the dielectric layer, thereby forming by-product impurities, and removing by-product impurities remaining on the plate electrode by introducing a hydrogen (H) atom-containing gas onto the semiconductor substrate while depositing a capping layer on the plate electrode.

摘要翻译： 公开了一种在半导体器件中形成电容器的方法。 该方法包括在半导体衬底上形成存储节点电极，在存储节点电极上形成具有高介电常数的电介质层，在电介质层上沉积平板电极，从而形成副产物杂质，除去副产物杂质 通过在半导体衬底上引入含氢（H）原子的气体，同时在平板电极上沉积覆盖层而残留在平板电极上。