-
1.发明申请Method for Producing a Thin-Film Semiconductor Body and Thin-Film Semiconductor Body 有权制造薄膜半导体体和薄膜半导体体的方法公开(公告)号：US20140061694A1
公开(公告)日：2014-03-06
申请号：US14002487
申请日：2012-02-28
CPC分类号： H01L33/20 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02664 , H01L33/007 , H01L33/0075 , H01L33/22 , H01L2933/0091
摘要： A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor body.
摘要翻译： 提供一种制造薄膜半导体体的方法。 提供生长衬底。 在生长衬底上外延生长具有漏斗形和/或倒置金字塔形凹陷的半导体层。 这些凹部以半导体材料填充，使得出现棱锥形的外耦合结构。 具有有源层的半导体层序列被应用于外耦合结构。 有源层适用于产生电磁辐射。 将载体施加到半导体层序列上。 至少具有漏斗形和/或倒置的金字塔状凹部的半导体层被分离，使得金字塔形外耦合结构被配置为在薄膜半导体本体的辐射出射面上的突起。
-
2.发明授权Method for producing a thin-film semiconductor body and thin-film semiconductor body 有权薄膜半导体体和薄膜半导体体的制造方法公开(公告)号：US09202967B2
公开(公告)日：2015-12-01
申请号：US14002487
申请日：2012-02-28
CPC分类号： H01L33/20 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02664 , H01L33/007 , H01L33/0075 , H01L33/22 , H01L2933/0091
摘要： A method for producing a thin-film semiconductor body is provided. A growth substrate is provided. A semiconductor layer with funnel-shaped and/or inverted pyramid-shaped recesses is epitaxially grown onto the growth substrate. The recesses are filled with a semiconductor material in such a way that pyramid-shaped outcoupling structures arise. A semiconductor layer sequence with an active layer is applied on the outcoupled structures. The active layer is suitable for generating electromagnetic radiation. A carrier is applied onto the semiconductor layer sequence. At least the semiconductor layer with the funnel-shaped and/or inverted pyramid-shaped recesses is detached, such that the pyramid-shaped outcoupling structures are configured as projections on a radiation exit face of the thin-film semiconductor body.
摘要翻译： 提供一种制造薄膜半导体体的方法。 提供生长衬底。 在生长衬底上外延生长具有漏斗形和/或倒置金字塔形凹陷的半导体层。 这些凹部以半导体材料填充，使得出现棱锥形的外耦合结构。 具有有源层的半导体层序列被应用于外耦合结构。 有源层适用于产生电磁辐射。 将载体施加到半导体层序列上。 至少具有漏斗形和/或倒置的金字塔状凹部的半导体层被分离，使得金字塔形外耦合结构被配置为在薄膜半导体本体的辐射出射面上的突起。
-
3.发明申请公开(公告)号：US20130230068A1
公开(公告)日：2013-09-05
申请号：US13821186
申请日：2011-09-07
IPC分类号： H01S5/22
CPC分类号： H01S5/2202 , H01S5/0425 , H01S5/2219 , H01S5/222 , H01S5/2231 , H01S5/4031 , H01S2301/176
摘要： An edge-emitting semiconductor laser diode includes an epitactic semiconductor layer stack and a planarization layer. The semiconductor layer stack includes a main body and a ridge waveguide. The main body includes an active layer for generating electromagnetic radiation. The planarization layer embeds the ridge waveguide such that a surface of the ridge waveguide and a surface of the planarization layer form a flat main surface. A method for producing such a semiconductor laser diode is also disclosed.
摘要翻译： 边缘发射半导体激光二极管包括外延半导体层堆叠和平坦化层。 半导体层堆叠包括主体和脊状波导。 主体包括用于产生电磁辐射的有源层。 平坦化层嵌入脊状波导，使得脊状波导的表面和平坦化层的表面形成平坦的主表面。 还公开了一种用于制造这种半导体激光二极管的方法。
-
4.发明授权公开(公告)号：US08995490B2
公开(公告)日：2015-03-31
申请号：US13821186
申请日：2011-09-07
CPC分类号： H01S5/2202 , H01S5/0425 , H01S5/2219 , H01S5/222 , H01S5/2231 , H01S5/4031 , H01S2301/176
摘要： An edge-emitting semiconductor laser diode includes an epitactic semiconductor layer stack and a planarization layer. The semiconductor layer stack includes a main body and a ridge waveguide. The main body includes an active layer for generating electromagnetic radiation. The planarization layer embeds the ridge waveguide such that a surface of the ridge waveguide and a surface of the planarization layer form a flat main surface. A method for producing such a semiconductor laser diode is also disclosed.
摘要翻译： 边缘发射半导体激光二极管包括外延半导体层堆叠和平坦化层。 半导体层堆叠包括主体和脊状波导。 主体包括用于产生电磁辐射的有源层。 平坦化层嵌入脊状波导，使得脊状波导的表面和平坦化层的表面形成平坦的主表面。 还公开了一种用于制造这种半导体激光二极管的方法。
-
公开(公告)号：US07885306B2
公开(公告)日：2011-02-08
申请号：US11824877
申请日：2007-07-02
IPC分类号： H01S5/00
CPC分类号： H01S5/0217 , H01S5/0216 , H01S5/2214 , H01S5/2232 , H01S5/3211 , H01S5/32341 , H01S2301/173
摘要： What is specified is an edge emitting semiconductor laser chip comprising a carrier substrate (1), an interlayer (2) promoting adhesion between the carrier substrate (1) and a component structure (50) of the edge emitting semiconductor laser chip, and the component structure (50) comprising an active zone (5) provided for generating radiation.
摘要翻译： 指定的是边缘发射半导体激光器芯片，其包括载体衬底（1），促进载体衬底（1）和边缘发射半导体激光器芯片的部件结构（50）之间的粘合的中间层（2） 结构（50）包括用于产生辐射的活动区（5）。
-
公开(公告)号：US08268659B2
公开(公告)日：2012-09-18
申请号：US13011326
申请日：2011-01-21
IPC分类号： H01L21/00
CPC分类号： H01S5/0217 , H01S5/0216 , H01S5/2214 , H01S5/2232 , H01S5/3211 , H01S5/32341 , H01S2301/173
摘要： A method for manufacturing an edge emitting semiconductor laser chip, which has a carrier substrate, an interlayer arranged between the carrier substrate and a component structure of the edge emitting semiconductor laser chip. The interlayer is adapted to provide adhesion between the carrier substrate and the component structure. The component structure has an active zone provided for generating radiation.
摘要翻译： 一种用于制造边缘发射半导体激光器芯片的方法，其具有载体衬底，布置在载体衬底和边缘发射半导体激光器芯片的部件结构之间的层间隔。 中间层适于提供载体基底和部件结构之间的粘附。 组件结构具有用于产生辐射的活动区域。
-
公开(公告)号：US20080049801A1
公开(公告)日：2008-02-28
申请号：US11824877
申请日：2007-07-02
IPC分类号： H01S5/00
CPC分类号： H01S5/0217 , H01S5/0216 , H01S5/2214 , H01S5/2232 , H01S5/3211 , H01S5/32341 , H01S2301/173
摘要： What is specified is an edge emitting semiconductor laser chip comprising a carrier substrate (1), an interlayer (2) promoting adhesion between the carrier substrate (1) and a component structure (50) of the edge emitting semiconductor laser chip, and the component structure (50) comprising an active zone (5) provided for generating radiation.
摘要翻译： 指定的是边缘发射半导体激光器芯片，其包括载体衬底（1），促进载体衬底（1）和边缘发射半导体激光器芯片的部件结构（50）之间的粘合的中间层（2） 结构（50）包括用于产生辐射的活动区（5）。
-
公开(公告)号：US20080089374A1
公开(公告)日：2008-04-17
申请号：US11906410
申请日：2007-10-01
IPC分类号： H01S5/22
CPC分类号： H01S5/2232 , H01S5/1064 , H01S5/1237 , H01S5/2022 , H01S5/22 , H01S5/2205 , H01S5/2214 , H01S5/2216 , H01S5/2219 , H01S5/222 , H01S5/2231 , H01S5/32341 , H01S2301/166 , H01S2304/12
摘要： A semiconductor laser comprising a semiconductor layer sequence (2) comprising an active zone (3) for generating electromagnetic radiation, and an absorber zone for attenuating higher modes. The absorber zone is arranged within the semiconductor layer sequence (2) or adjoins the semiconductor layer sequence (2).
摘要翻译： 一种包括半导体层序列（2）的半导体激光器，包括用于产生电磁辐射的有源区（3）和用于衰减更高模式的吸收区。 吸收区设置在半导体层序列（2）内或毗邻半导体层序列（2）。
-
公开(公告)号：US08340146B2
公开(公告)日：2012-12-25
申请号：US12679832
申请日：2008-08-27
IPC分类号： H01S5/00
CPC分类号： H01L33/44 , H01L2924/0002 , H01S5/2022 , H01S5/22 , H01S5/2205 , H01S5/2218 , H01S5/222 , H01L2924/00
摘要： The invention relates to a radiation-emitting semiconductor chip, comprising an active zone for generating radiation having a wavelength lambda and a structured region having irregularly arranged structure elements which contain a first material having a first refractive index n1 and which are surrounded by a medium comprising a second material having a second refractive index n2. A method for producing a semiconductor chip of this type is furthermore specified.
摘要翻译： 本发明涉及辐射发射半导体芯片，其包括用于产生具有波长λ的辐射的有源区和具有不规则排列的结构元件的结构区域，该结构元件包含具有第一折射率n1的第一材料并被包含 具有第二折射率n2的第二材料。 进一步说明了这种类型的半导体芯片的制造方法。
-
公开(公告)号：US20100278203A1
公开(公告)日：2010-11-04
申请号：US12679832
申请日：2008-08-27
IPC分类号： H01S5/22 , H01L33/44 , H01L21/302
CPC分类号： H01L33/44 , H01L2924/0002 , H01S5/2022 , H01S5/22 , H01S5/2205 , H01S5/2218 , H01S5/222 , H01L2924/00
摘要： The invention relates to a radiation-emitting semiconductor chip, comprising an active zone for generating radiation having a wavelength lambda and a structured region having irregularly arranged structure elements which contain a first material having a first refractive index n1 and which are surrounded by a medium comprising a second material having a second refractive index n2. A method for producing a semiconductor chip of this type is furthermore specified.
摘要翻译： 本发明涉及辐射发射半导体芯片，其包括用于产生具有波长λ的辐射的有源区和具有不规则排列的结构元件的结构区域，该结构元件包含具有第一折射率n1的第一材料并被包含 具有第二折射率n2的第二材料。 进一步说明了这种类型的半导体芯片的制造方法。
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.02 秒)
