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    Selective Current Pumping to Enhance Low-Voltage ESD Clamping Using High Voltage Devices
    3.
    发明申请
    Selective Current Pumping to Enhance Low-Voltage ESD Clamping Using High Voltage Devices 有权
    选择性电流泵浦以增强使用高压器件的低电压ESD钳位

    公开(公告)号：US20130250461A1

    公开(公告)日：2013-09-26

    申请号：US13429577

    申请日：2012-03-26

    申请人： Mayank Shrivastava ,  Christian Russ ,  Harald Gossner

    发明人： Mayank Shrivastava ,  Christian Russ ,  Harald Gossner

    IPC分类号： H02H9/04

    CPC分类号： H02H9/046

    摘要： Some embodiments relate to an electrostatic discharge (ESD) protection device to protect a circuit from an ESD event. The ESD protection device includes first and second trigger elements. Upon detecting an ESD pulse, the first trigger element provides a first trigger signal having a first pulse length. The second trigger element, upon detecting the ESD pulse, provides a second trigger signal having a second pulse length. The second pulse length is different from the first pulse length. A primary shunt shunts power of the ESD pulse away from the ESD susceptible circuit based on the first trigger signal. A current control element selectively pumps current due to the ESD pulse into a substrate of the primary shunt based on the second trigger signal.

    摘要翻译： 一些实施例涉及用于保护电路免受ESD事件的静电放电（ESD）保护装置。 ESD保护装置包括第一和第二触发元件。 在检测到ESD脉冲时，第一触发元件提供具有第一脉冲长度的第一触发信号。 第二触发元件在检测到ESD脉冲时提供具有第二脉冲长度的第二触发信号。 第二脉冲长度与第一脉冲长度不同。 基于第一触发信号，主分流器将ESD脉冲的功率分配离开ESD敏感电路。 电流控制元件基于第二触发信号选择性地将由于ESD脉冲引起的电流泵送到主分流器的衬底中。

    Electrostatic discharge protection element
    5.
    发明授权
    Electrostatic discharge protection element 有权
    静电放电保护元件

    公开(公告)号：US07919816B2

    公开(公告)日：2011-04-05

    申请号：US11506683

    申请日：2006-08-18

    申请人： Harald Gossner ,  Christian Russ

    发明人： Harald Gossner ,  Christian Russ

    IPC分类号： H01L23/62

    CPC分类号： H01L27/1211 ,  H01L27/0288 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/8086 ,  H01L2029/7857

    摘要： A gate controlled fin resistance element for use as an electrostatic discharge (ESD) protection element in an electrical circuit has a fin structure having a first connection region, a second connection region and a channel region formed between the first and second connection regions. Furthermore, the fin resistance element has a gate region formed at least over a part of the surface of the channel region. The gate region is electrically coupled to a gate control device, which gate control device controls an electrical potential applied to the gate region in such a way that the gate controlled fin resistance element has a high electrical resistance during a first operating state of the electrical circuit and a lower electrical resistance during a second operating state, which is characterized by the occurrence of an ESD event.

    摘要翻译： 在电路中用作静电放电（ESD）保护元件的栅极控制鳍电阻元件具有鳍状结构，其具有形成在第一和第二连接区域之间的第一连接区域，第二连接区域和沟道区域。 此外，散热片电阻元件具有形成在通道区域的表面的至少一部分上的栅极区域。 栅极区域电耦合到栅极控制装置，栅极控制装置控制施加到栅极区域的电位，使得栅极控制的鳍状电阻元件在电路的第一操作状态期间具有高电阻 并且在第二操作状态期间具有较低的电阻，其特征在于发生ESD事件。

    ESD protection element and ESD protection device for use in an electrical circuit
    7.
    发明申请
    ESD protection element and ESD protection device for use in an electrical circuit 有权
    ESD保护元件和用于电路的ESD保护器件

    公开(公告)号：US20070262386A1

    公开(公告)日：2007-11-15

    申请号：US11803169

    申请日：2007-05-11

    申请人： Harald Gossner ,  Christian Russ

    发明人： Harald Gossner ,  Christian Russ

    IPC分类号： H01L23/62

    CPC分类号： H01L23/60 ,  H01L27/0262 ,  H01L29/0657 ,  H01L29/0692 ,  H01L29/7436 ,  H01L29/749 ,  H01L29/785 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An ESD protection element for use in an electrical circuit having a fin structure or a fully depleted silicon-on-insulator structure. The fin structure or the fully depleted silicon-on-insulator structure contains a first connection region having a first conductivity type; a second connection region having a second conductivity type, which is opposite to the first conductivity type; and also a plurality of body regions which are formed alongside one another and which are formed between the first connection region and the second connection region. The body regions alternately have the first conductivity type and the second conductivity type. The ESD protection element has at least one gate region formed on or above at least one of the plurality of body regions, and also at least one gate control device which is electrically coupled to the at least one gate region.

    摘要翻译： 一种用于具有翅片结构或完全耗尽的绝缘体上硅结构的电路中的ESD保护元件。 翅片结构或完全耗尽的绝缘体上的结构包含具有第一导电类型的第一连接区域; 具有与第一导电类型相反的第二导电类型的第二连接区域; 以及形成在第一连接区域和第二连接区域之间的多个体区域。 身体区域交替地具有第一导电类型和第二导电类型。 ESD保护元件具有形成在多个主体区域中的至少一个上方或上方的至少一个栅极区域，以及至少一个电连接至该至少一个栅极区域的栅极控制装置。

    High voltage semiconductor devices
    8.
    发明授权
    High voltage semiconductor devices 有权
    高压半导体器件

    公开(公告)号：US08664720B2

    公开(公告)日：2014-03-04

    申请号：US12868434

    申请日：2010-08-25

    申请人： Mayank Shrivastava ,  Maryam Shojaei Baghini ,  Cornelius Christian Russ ,  Harald Gossner ,  Ramgopal Rao

    发明人： Mayank Shrivastava ,  Maryam Shojaei Baghini ,  Cornelius Christian Russ ,  Harald Gossner ,  Ramgopal Rao

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L27/01 ,  H01L27/12 ,  H01L31/062

    CPC分类号： H01L27/1211 ,  H01L27/0727 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/7831 ,  H01L29/7835 ,  H01L29/7836 ,  H01L29/78624

    摘要： In one embodiment, the semiconductor device includes a first source of a first doping type disposed in a substrate. A first drain of the first doping type is disposed in the substrate. A first gate region is disposed between the first source and the first drain. A first channel region of a second doping type is disposed under the first gate region. The second doping type is opposite to the first doping type. A first extension region of the first doping type is disposed between the first gate and the first drain. The first extension region is part of a first fin disposed in or over the substrate. A first isolation region is disposed between the first extension region and the first drain. A first well region of the first doping type is disposed under the first isolation region. The first well region electrically couples the first extension region with the first drain.

    摘要翻译： 在一个实施例中，半导体器件包括设置在衬底中的第一掺杂类型的第一源。 第一掺杂型的第一漏极设置在衬底中。 第一栅极区域设置在第一源极和第一漏极之间。 第一掺杂类型的第一沟道区域设置在第一栅极区域的下方。 第二掺杂类型与第一掺杂类型相反。 第一掺杂类型的第一延伸区域设置在第一栅极和第一漏极之间。 第一延伸区域是设置在基板中或上方的第一鳍片的一部分。 第一隔离区域设置在第一延伸区域和第一漏极之间。 第一掺杂类型的第一阱区设置在第一隔离区下。 第一阱区域将第一延伸区域与第一漏极电耦合。

    LOW VOLTAGE ESD CLAMPING USING HIGH VOLTAGE DEVICES
    9.
    发明申请
    LOW VOLTAGE ESD CLAMPING USING HIGH VOLTAGE DEVICES 有权
    使用高压器件的低电压ESD钳位

    公开(公告)号：US20130258534A1

    公开(公告)日：2013-10-03

    申请号：US13437475

    申请日：2012-04-02

    申请人： Mayank Shrivastava ,  Christian Russ ,  Harald Gossner

    发明人： Mayank Shrivastava ,  Christian Russ ,  Harald Gossner

    IPC分类号： H02H9/04

    CPC分类号： H02H9/046

    摘要： Some embodiments relate to an electrostatic discharge (ESD) protection device. The ESD protection device includes a first electrical path extending between the first and second circuit nodes and including a trigger element. A second electrical path extends between the first and second circuit nodes. The second electrical path includes a shunt element. A switching element is configured to trigger current flow through the shunt element based on both a state of the trigger element and a state of the switching element.

    摘要翻译： 一些实施例涉及静电放电（ESD）保护装置。 ESD保护装置包括在第一和第二电路节点之间延伸并且包括触发元件的第一电路径。 第二电路在第一和第二电路节点之间延伸。 第二电路包括分路元件。 开关元件被配置为基于触发元件的状态和开关元件的状态触发通过分流元件的电流。