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公开(公告)号：US5060233A
公开(公告)日：1991-10-22
申请号：US570251
申请日：1990-08-17
IPC分类号： G02F1/35 , G02F1/37 , H01S5/0687 , H01S5/40
CPC分类号： G02F1/37 , H01S5/0687 , G02F2001/3542 , H01S5/4025
摘要： Apparatus and method for producing coherent blue-green-light radiation having a wavelength of essentially 490-500 nm. A diode laser, such as a strained-layer InGaAs/GaAs diode laser, provides a 980-1,000 nm beam, and a nonlinear crystal of KTP produces coherent radiation by noncritically phase-matched second-harmonic generation (SHG) of said beam. The beam preferably has a wavelength of essentially 994 nm for generating radiation having a wavelength of essentially 497 nm. The crystal is disposed within an optical resonator and the frequency of the laser is locked to that of the resonator. Alternatively, two diode lasers are oriented to provide orthogonally polarized beams each with a wavelength of 980-1,000 nm but within essentially 1 nm of each other, and the KTP crystal is oriented with its a- and c-axis parallel to the orthogonally polarized beams. The KTP crystal may have an associated optical waveguide along which the beam is propagated to enhance SHG efficiency.
摘要翻译： 用于产生波长基本为490-500nm的相干蓝 - 绿光辐射的装置和方法。 诸如应变层InGaAs / GaAs二极管激光器的二极管激光器提供980-1,000nm的光束，并且KTP的非线性晶体通过所述光束的非相位相位二次谐波产生（SHG）产生相干辐射。 光束优选地具有基本上为994nm的波长，用于产生波长基本上为497nm的辐射。 晶体设置在光学谐振器内，并且激光器的频率被锁定到谐振器的频率。 或者，两个二极管激光器被定向以提供各自具有980-1,000nm的波长但在彼此基本上1nm内的正交偏振光束，并且KTP晶体被取向为其a轴和c轴平行于正交偏振光束 。 KTP晶体可以具有相关联的光波导，沿着该光波导传播光束以增强SHG效率。
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公开(公告)号：US5594749A
公开(公告)日：1997-01-14
申请号：US292900
申请日：1994-08-19
CPC分类号： B82Y20/00 , H01S5/162 , H01S5/34 , H01S2301/18 , H01S5/0202 , H01S5/2004 , H01S5/2009 , H01S5/2059 , H01S5/22 , H01S5/3211 , H01S5/3409 , H01S5/3413 , H01S5/3421 , Y10S148/095
摘要： A planar, topology free, semiconductor quantum-well laser is described. The quantum-well active layer is formed and patterned in a specified region which is constrained on all sides by high bandgaps which are formed through the use of impurity-free diffusion techniques. After the impurity-free diffusion has taken place, an upper portion is then epitaxially deposited to complete the structure. High-power, single fundamental mode laser operation is achieved by funneling current into the constrained quantum-well active region, high bandgap regions in conjunction with low index of refraction in regions surrounding the active area. The structure is further designed to allow low beam divergence in the direction perpendicular to the semiconductor laser junction.
摘要翻译： 描述了一种平面无拓扑的半导体量子阱激光器。 在通过使用无杂质扩散技术形成的高带隙的特定区域中形成并图案化量子阱有源层，该特定区域在所有侧面受到限制。 在发生无杂质扩散之后，然后外部沉积上部以完成该结构。 大功率单基模激光器操作是通过将电流漏入受约束的量子阱有源区域，高带隙区域以及围绕有源区域的区域中的低折射率而实现的。 该结构被进一步设计成允许在垂直于半导体激光器结的方向上的低光束发散。
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3.发明授权Planar, topology-free, single-mode, high-power semiconductor quantum-well laser with non-absorbing mirrors and current confinement 失效平面，无拓扑，单模，大功率半导体量子阱激光器，具有非吸收反射镜和电流限制
公开(公告)号：US5376582A
公开(公告)日：1994-12-27
申请号：US136181
申请日：1993-10-15
CPC分类号： B82Y20/00 , H01S5/162 , H01S5/34 , H01S2301/18 , H01S5/0202 , H01S5/2004 , H01S5/2009 , H01S5/2059 , H01S5/22 , H01S5/3211 , H01S5/3409 , H01S5/3413 , H01S5/3421 , Y10S148/095
摘要： A planar, topology free, semiconductor quantum-well laser is described. The quantum-well active layer is formed and patterned in a specified region which is constrained on all sides by high bandgaps which are formed through the use of impurity-free diffusion techniques. After the impurity-free diffusion has taken place, an upper portion is then epitaxially deposited to complete the structure. High-power, single fundamental mode laser operation is achieved by funneling current into the constrained quantum-well active region, high bandgap regions in conjunction with low index of refraction in regions surrounding the active area.The structure is further designed to allow low beam divergence in the direction perpendicular to the semiconductor laser junction.
摘要翻译： 描述了一种平面无拓扑的半导体量子阱激光器。 在通过使用无杂质扩散技术形成的高带隙的特定区域中形成并图案化量子阱有源层，该特定区域在所有侧面受到限制。 在发生无杂质扩散之后，然后外部沉积上部以完成该结构。 大功率单基模激光器操作是通过将电流漏入受约束的量子阱有源区域，高带隙区域以及围绕有源区域的区域中的低折射率而实现的。 该结构被进一步设计成允许在垂直于半导体激光器结的方向上的低光束发散。
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公开(公告)号：US4805179A
公开(公告)日：1989-02-14
申请号：US99936
申请日：1987-09-23
CPC分类号： H01S5/2203 , H01S5/305 , H01S5/2235 , H01S5/2237 , H01S5/3081 , H01S5/4031
摘要： A GaAs/AlGaAs-transverse junction stripe (TJS) laser with p-n junction formation by crystal plane dependent doping is described. The laser structure includes a molecular beam epitaxy (MBE)-deposited hetero-structure comprising AlGaAs layers with an active GaAs layer sandwiched therebetween. These layers are grown on the patterned surface of a GaAs substrate which provides (100)-plane oriented planar ridges and grooves, the edges being (111A)-plane oriented. p-n homojunctions are formed in the GaAs layer at the intersections of the (111A) and (100) crystal planes. Ohmic contacts are provided for applying currents of at least the threshold level of the junctions. These TJS lasers can be used to form 1- or 2-dimensional arrays of phase-coupled lasers for providing high optical power output.
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公开(公告)号：US5301202A
公开(公告)日：1994-04-05
申请号：US22212
申请日：1993-02-25
申请人： Christoph S. Harder , Sridhar V. Iyer , Heinz P. Meier , Alfred Phillips, Jr. , Abbas Behfar-Rad
发明人： Christoph S. Harder , Sridhar V. Iyer , Heinz P. Meier , Alfred Phillips, Jr. , Abbas Behfar-Rad
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/3211 , H01S5/3432
摘要： A semiconductor ridge waveguide laser having a high value of horizontal far-field wherein the laser structure includes a substrate, a first or lower cladding layer composed of a AlGaAs on the substrate, an acting layer on the lower cladding layer, and a second or upper cladding layer composed of AlGaAs on the active layer. The upper cladding layer includes a raised ridge portion formed by etching the upper cladding layer through a mask. A contact layer is disposed on top of the ridge portion. The aluminum mole concentration of the lower cladding layer is greater than the aluminum mole concentration of the upper cladding layer. This forces the optical mode towards the upper cladding layer and results in an increased lateral waveguide confinement that produces a high horizontal far-field.
摘要翻译： 一种具有高水平远场值的半导体脊波导激光器，其中激光器结构包括衬底，由衬底上的AlGaAs构成的第一或下包层，下包层上的作用层，以及第二或上层 在有源层上由AlGaAs组成的覆层。 上包层包括通过掩模蚀刻上包层形成的凸脊部分。 接触层设置在脊部的顶部。 下包层的铝摩尔浓度大于上包层的铝摩尔浓度。 这迫使光学模式朝向上部包层，并且导致产生高水平远场的增加的横向波导限制。
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公开(公告)号：US5185289A
公开(公告)日：1993-02-09
申请号：US720965
申请日：1991-06-25
CPC分类号： H01L33/0062 , H01S5/227 , H01S5/32 , H01S5/2235 , H01S5/2237 , H01S5/3203 , Y10S148/095
摘要： The process is particularly useful in the fabrication of GaAs quantum well (QW) laser diodes. Starting point is a ridge-patterned (100)-substrate (21), the crystal orientation of the sidewalls, e.g., (411A)-oriented, being different from that of the horizontal top. The sidewall facets thus have a lower Ga incorporation rate.In a molecular beam epitaxy (MBE) system, the lower AlGaAs cladding layer (22) is first grown, followed by the high-temperature growth of the active GaAs QW (23). Due to diffusion and desorption processes, the GaAs thickness at the sidewalls is smaller than on the horizontal top of the ridge. During a short growth interrupt, the GaAs completely desorbs from the sidewall facets. With the subsequent growth of the upper cladding layer (24), the QW becomes laterally embedded in higher bandgap material providing for lateral electric confinement.
摘要翻译： 该工艺在GaAs量子阱（QW）激光二极管的制造中特别有用。 起始点是脊形图案（100） - 衬底（21），侧壁的晶体取向（例如（411A））取向不同于水平顶部。 因此，侧壁面具有较低的Ga掺入率。 在分子束外延（MBE）系统中，首先生长下部AlGaAs覆层（22），随后激活有源GaAs QW（23）的高温生长。 由于扩散和解吸过程，侧壁处的GaAs厚度小于脊的水平顶部。 在短暂的增长中断期间，GaAs完全从侧壁面解吸。 随着上包层（24）的随后生长，QW横向地嵌入在提供横向电限制的较高带隙材料中。
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