-
公开(公告)号：US5060233A
公开(公告)日：1991-10-22
申请号：US570251
申请日：1990-08-17
IPC分类号： G02F1/35 , G02F1/37 , H01S5/0687 , H01S5/40
CPC分类号： G02F1/37 , H01S5/0687 , G02F2001/3542 , H01S5/4025
摘要： Apparatus and method for producing coherent blue-green-light radiation having a wavelength of essentially 490-500 nm. A diode laser, such as a strained-layer InGaAs/GaAs diode laser, provides a 980-1,000 nm beam, and a nonlinear crystal of KTP produces coherent radiation by noncritically phase-matched second-harmonic generation (SHG) of said beam. The beam preferably has a wavelength of essentially 994 nm for generating radiation having a wavelength of essentially 497 nm. The crystal is disposed within an optical resonator and the frequency of the laser is locked to that of the resonator. Alternatively, two diode lasers are oriented to provide orthogonally polarized beams each with a wavelength of 980-1,000 nm but within essentially 1 nm of each other, and the KTP crystal is oriented with its a- and c-axis parallel to the orthogonally polarized beams. The KTP crystal may have an associated optical waveguide along which the beam is propagated to enhance SHG efficiency.
摘要翻译： 用于产生波长基本为490-500nm的相干蓝 - 绿光辐射的装置和方法。 诸如应变层InGaAs / GaAs二极管激光器的二极管激光器提供980-1,000nm的光束，并且KTP的非线性晶体通过所述光束的非相位相位二次谐波产生（SHG）产生相干辐射。 光束优选地具有基本上为994nm的波长，用于产生波长基本上为497nm的辐射。 晶体设置在光学谐振器内，并且激光器的频率被锁定到谐振器的频率。 或者，两个二极管激光器被定向以提供各自具有980-1,000nm的波长但在彼此基本上1nm内的正交偏振光束，并且KTP晶体被取向为其a轴和c轴平行于正交偏振光束 。 KTP晶体可以具有相关联的光波导，沿着该光波导传播光束以增强SHG效率。
-
公开(公告)号：US5594749A
公开(公告)日：1997-01-14
申请号：US292900
申请日：1994-08-19
CPC分类号： B82Y20/00 , H01S5/162 , H01S5/34 , H01S2301/18 , H01S5/0202 , H01S5/2004 , H01S5/2009 , H01S5/2059 , H01S5/22 , H01S5/3211 , H01S5/3409 , H01S5/3413 , H01S5/3421 , Y10S148/095
摘要： A planar, topology free, semiconductor quantum-well laser is described. The quantum-well active layer is formed and patterned in a specified region which is constrained on all sides by high bandgaps which are formed through the use of impurity-free diffusion techniques. After the impurity-free diffusion has taken place, an upper portion is then epitaxially deposited to complete the structure. High-power, single fundamental mode laser operation is achieved by funneling current into the constrained quantum-well active region, high bandgap regions in conjunction with low index of refraction in regions surrounding the active area. The structure is further designed to allow low beam divergence in the direction perpendicular to the semiconductor laser junction.
摘要翻译： 描述了一种平面无拓扑的半导体量子阱激光器。 在通过使用无杂质扩散技术形成的高带隙的特定区域中形成并图案化量子阱有源层，该特定区域在所有侧面受到限制。 在发生无杂质扩散之后，然后外部沉积上部以完成该结构。 大功率单基模激光器操作是通过将电流漏入受约束的量子阱有源区域，高带隙区域以及围绕有源区域的区域中的低折射率而实现的。 该结构被进一步设计成允许在垂直于半导体激光器结的方向上的低光束发散。
-
公开(公告)号：US4805179A
公开(公告)日：1989-02-14
申请号：US99936
申请日：1987-09-23
CPC分类号： H01S5/2203 , H01S5/305 , H01S5/2235 , H01S5/2237 , H01S5/3081 , H01S5/4031
摘要： A GaAs/AlGaAs-transverse junction stripe (TJS) laser with p-n junction formation by crystal plane dependent doping is described. The laser structure includes a molecular beam epitaxy (MBE)-deposited hetero-structure comprising AlGaAs layers with an active GaAs layer sandwiched therebetween. These layers are grown on the patterned surface of a GaAs substrate which provides (100)-plane oriented planar ridges and grooves, the edges being (111A)-plane oriented. p-n homojunctions are formed in the GaAs layer at the intersections of the (111A) and (100) crystal planes. Ohmic contacts are provided for applying currents of at least the threshold level of the junctions. These TJS lasers can be used to form 1- or 2-dimensional arrays of phase-coupled lasers for providing high optical power output.
-
公开(公告)号：US5301202A
公开(公告)日：1994-04-05
申请号：US22212
申请日：1993-02-25
申请人： Christoph S. Harder , Sridhar V. Iyer , Heinz P. Meier , Alfred Phillips, Jr. , Abbas Behfar-Rad
发明人： Christoph S. Harder , Sridhar V. Iyer , Heinz P. Meier , Alfred Phillips, Jr. , Abbas Behfar-Rad
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/3211 , H01S5/3432
摘要： A semiconductor ridge waveguide laser having a high value of horizontal far-field wherein the laser structure includes a substrate, a first or lower cladding layer composed of a AlGaAs on the substrate, an acting layer on the lower cladding layer, and a second or upper cladding layer composed of AlGaAs on the active layer. The upper cladding layer includes a raised ridge portion formed by etching the upper cladding layer through a mask. A contact layer is disposed on top of the ridge portion. The aluminum mole concentration of the lower cladding layer is greater than the aluminum mole concentration of the upper cladding layer. This forces the optical mode towards the upper cladding layer and results in an increased lateral waveguide confinement that produces a high horizontal far-field.
摘要翻译： 一种具有高水平远场值的半导体脊波导激光器，其中激光器结构包括衬底，由衬底上的AlGaAs构成的第一或下包层，下包层上的作用层，以及第二或上层 在有源层上由AlGaAs组成的覆层。 上包层包括通过掩模蚀刻上包层形成的凸脊部分。 接触层设置在脊部的顶部。 下包层的铝摩尔浓度大于上包层的铝摩尔浓度。 这迫使光学模式朝向上部包层，并且导致产生高水平远场的增加的横向波导限制。
-
5.发明授权Planar, topology-free, single-mode, high-power semiconductor quantum-well laser with non-absorbing mirrors and current confinement 失效平面，无拓扑，单模，大功率半导体量子阱激光器，具有非吸收反射镜和电流限制
公开(公告)号：US5376582A
公开(公告)日：1994-12-27
申请号：US136181
申请日：1993-10-15
CPC分类号： B82Y20/00 , H01S5/162 , H01S5/34 , H01S2301/18 , H01S5/0202 , H01S5/2004 , H01S5/2009 , H01S5/2059 , H01S5/22 , H01S5/3211 , H01S5/3409 , H01S5/3413 , H01S5/3421 , Y10S148/095
摘要： A planar, topology free, semiconductor quantum-well laser is described. The quantum-well active layer is formed and patterned in a specified region which is constrained on all sides by high bandgaps which are formed through the use of impurity-free diffusion techniques. After the impurity-free diffusion has taken place, an upper portion is then epitaxially deposited to complete the structure. High-power, single fundamental mode laser operation is achieved by funneling current into the constrained quantum-well active region, high bandgap regions in conjunction with low index of refraction in regions surrounding the active area.The structure is further designed to allow low beam divergence in the direction perpendicular to the semiconductor laser junction.
摘要翻译： 描述了一种平面无拓扑的半导体量子阱激光器。 在通过使用无杂质扩散技术形成的高带隙的特定区域中形成并图案化量子阱有源层，该特定区域在所有侧面受到限制。 在发生无杂质扩散之后，然后外部沉积上部以完成该结构。 大功率单基模激光器操作是通过将电流漏入受约束的量子阱有源区域，高带隙区域以及围绕有源区域的区域中的低折射率而实现的。 该结构被进一步设计成允许在垂直于半导体激光器结的方向上的低光束发散。
-
6.发明授权Process for forming the ridge structure of a self-aligned semiconductor laser 失效形成自对准半导体激光器的RIDGE结构的方法
公开(公告)号：US5059552A
公开(公告)日：1991-10-22
申请号：US669816
申请日：1991-03-15
IPC分类号： H01S5/00 , H01L21/318 , H01S5/22
CPC分类号： H01S5/22 , H01L21/3185 , Y10S148/10 , Y10S438/951 , Y10S438/978
摘要： A process for forming the ridge structure of a self-aligned InP-system, double heterostructure (DH) laser, particularly useful for long wavelength devices as required for signal transmission systems includes a thin Si.sub.3 N.sub.4 layer (41) inserted between a photoresist mask (42) that defines the ridge structure, and a contact layer (35). Using a Si.sub.3 N.sub.4 layer (4) deposited at a high plasma excitation frequency (RF) for adhesion promotion, and a low frequency deposited (LF) Si.sub.3 N.sub.4 layer (43) for device embedding, provides for the etch selectively required in the process step that is used to expose the contact layer to ohmic contact metallization deposition.
-
7.发明授权Roughened sidewall ridge for high power fundamental mode semiconductor ridge waveguide laser operation 失效用于高功率基极半导体脊波导激光器操作的粗糙侧壁脊
公开(公告)号：US5311539A
公开(公告)日：1994-05-10
申请号：US981457
申请日：1992-11-25
CPC分类号： B82Y20/00 , G02B6/122 , H01S5/22 , H01S5/2205 , H01S5/3432
摘要： A semiconductor ridge waveguide laser structure with a roughened sidewall ridge that includes a substrate and an active layer disposed between lower and upper cladding layers. The structure further includes a waveguide ridge which comprises a contact layer and a trapezoidal ridge portion 16 of the upper cladding layer. The trapezoidal ridge portion has roughened sidewalls which provides low contact resistance.
摘要翻译： 一种具有粗糙侧壁脊的半导体脊波导激光器结构，其包括衬底和设置在下包层和上覆层之间的有源层。 该结构还包括波导脊，其包括上覆层的接触层和梯形脊部16。 梯形脊部分具有粗糙化的侧壁，提供低接触电阻。
-
8.发明授权
公开(公告)号：US5171717A
公开(公告)日：1992-12-15
申请号：US647861
申请日：1991-01-30
申请人： Ronald F. Broom , Marcel Gasser , Christoph S. Harder , Ernst E. Latta , Albertus Oosenbrug , Heinz Richard , Peter Vettiger
发明人： Ronald F. Broom , Marcel Gasser , Christoph S. Harder , Ernst E. Latta , Albertus Oosenbrug , Heinz Richard , Peter Vettiger
IPC分类号： B28D5/00 , H01L21/301 , H01S5/00 , H01S5/02
CPC分类号： B28D5/0029 , H01S5/0202 , Y10T225/12
摘要： A method for cleaving semiconductor wafers, or segments thereof, which comprises placing the wafer, provided with scribe lines defining the planes where cleaving is to take place, inbetween a pair of flexible transport bands and guiding it around a curved, large radius surface thereby applying a bending moment. With a moment of sufficient magnitude, individual bars are broken off the wafer as this is advanced, the bars having front-and rear-end facets. On cleaving, each bar, while still pressed against the curved surface, is automatically separated whereby mutual damage of the facets of neighboring bars is prevented. For further handling, e.g. for the transport of the bars to an evaporation station for passivation layer deposition, provisions are made to keep the bars separated. Cleaving and the subsequent passivation coating can be carried out in-situ in a vacuum system to prevent facet contamination prior to applying the passivation.
摘要翻译： 一种用于切割半导体晶片或其部分的方法，其包括将设置有限定要进行裂开的平面的切割线的晶片放置在一对柔性传输带之间并将其引导到弯曲的大半径表面上，从而施加 一个弯曲的时刻。 有了足够的时刻，随着这个进步，单个的条被从晶片上分离出来，这些条具有前端和后端方面。 在切割时，每个杆在仍然压靠弯曲表面的同时被自动分离，从而防止相邻杆的小面的相互损坏。 为了进一步处理，例如 为了将棒运送到用于钝化层沉积的蒸发站，进行了保持棒分离的规定。 切割和随后的钝化涂层可以在真空系统中原位进行，以防止在施加钝化之前的小面污染。
-
公开(公告)号：US4725727A
公开(公告)日：1988-02-16
申请号：US811229
申请日：1985-12-20
摘要： The waveguide comprises a transparent body having a very sharp point at one end and being coated with a first opaque layer, such as metal. The first opaque layer carries a layer of an optically transparent material which is covered, in turn, by a second opaque layer. The apex of the point has been removed so as to expose the transparent body through a first aperture and to expose the transparent layer through a second aperture, the first aperture occupying an area of less than 0.01 .mu.m.sup.2.Light enters the transparent body at its remote end and exits through the first aperture to illuminate an object. Reflected light from the object enters the transparent layer through the second aperture and is guided to a light detector for further processing.
摘要翻译： 波导包括透明体，其在一端具有非常尖的点，并且涂覆有诸如金属的第一不透明层。 第一不透明层携带一层光学透明的材料，其又被第二不透明层覆盖。 已经去除点的顶点，以便通过第一孔露出透明体，并通过第二孔暴露透明层，第一孔占据小于0.01μm的面积。 光进入其远端的透明体并通过第一孔离开以照射物体。 来自物体的反射光通过第二孔进入透明层，并被引导到光检测器进行进一步处理。
-
公开(公告)号：US4675711A
公开(公告)日：1987-06-23
申请号：US798653
申请日：1985-11-15
IPC分类号： H01L29/80 , H01L29/20 , H01L29/205 , H01L29/772 , H01L29/78 , H01L29/12 , H01L29/66
CPC分类号： H01L29/772
摘要： The transistor comprises two electrodes, (source (22) and drain (23), with a semiconductor tunnel channel (21A, 21B) arranged therebetween. A gate (24) for applying control signals is coupled to the channel. The semiconductor channel consists of a plurality of regions differing in their current transfer characteristics: contact regions (21c), connected to the source and drain electrodes, and a tunneling region (21t) arranged between the contact regions. The energy of free carriers in the contact regions differs from the energy of the conduction band or the valence band of the tunneling region which forms a low energy tunnel barrier the height (.DELTA.E) of which can be modified by control signals applied to the gate. The operating temperature of the device is kept sufficiently low to have the tunnel current through the barrier outweigh currents of thermionically excited carriers.
摘要翻译： 晶体管包括两个电极（源极（22）和漏极（23）），其间布置有半导体隧道通道（21A，21B），用于施加控制信号的栅极（24）耦合到沟道，半导体通道由 其电流传递特性不同的多个区域：连接到源极和漏极的接触区域（21c）和布置在接触区域之间的隧道区域（21t），接触区域中的自由载流子的能量不同于 形成低能隧道势垒的隧穿区的导带或价带的能量可以通过施加到栅极的控制信号来修改其高度（DELTA E），器件的工作温度保持足够低到 隧道电流通过阻挡层超过热激发载流子的电流。
-
-
-
-
-
-
-
-
-
搜索结果
12 条记录 (耗时 0.022 秒)
