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21 条记录 (耗时 0.031 秒)

    Method of making stabilized MR sensor and flux guide joined by contiguous junction
    4.
    发明授权
    Method of making stabilized MR sensor and flux guide joined by contiguous junction 失效
    制造稳定的MR传感器和通过连接接头连接的助焊剂的方法

    公开(公告)号：US5893981A

    公开(公告)日：1999-04-13

    申请号：US44358

    申请日：1998-03-19

    申请人： Moris Musa Dovek ,  Robert E. Fontana ,  Richard Hsiao ,  Mohamad Towfik Krounbi ,  Hugo Alberto Emilio Santini ,  Virgil Simon Speriosu

    发明人： Moris Musa Dovek ,  Robert E. Fontana ,  Richard Hsiao ,  Mohamad Towfik Krounbi ,  Hugo Alberto Emilio Santini ,  Virgil Simon Speriosu

    IPC分类号： G01R33/09 ,  G03F7/00 ,  G11B5/31 ,  G11B5/39 ,  B44C1/22

    CPC分类号： G11B5/3916 ,  G01R33/09 ,  G03F7/00 ,  G11B5/3903 ,  G11B5/3919 ,  G11B5/3932 ,  G11B5/3163

    摘要： The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous self-aligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.

    摘要翻译： MR传感器和磁通引导件的后端通过连续的自对准结连接，从而可以实现MR传感器后端的磁通引导件的可预测重叠，以优化MR传感器中的信号通量密度。 用于MR传感器的引线/纵向偏置层也通过连接的自对准结连接到通量引导件，用于稳定通量引导件。 通过使用单个剥离抗蚀剂掩模，MR传感器和引导/纵向偏置层可以被图案化，然后沉积助焊剂引导件。 助焊剂是绝缘材料层和助焊剂引导材料层的双层。 绝缘材料层被夹在MR传感器和磁通引导材料层之间以及引导/纵向偏置层与通量引导材料层之间。 导热或组合的磁通引导件和导热件可以代替上述的磁通引导件。

    THREE-DIMENSIONAL MAGNETIC MEMORY
    6.
    发明申请
    THREE-DIMENSIONAL MAGNETIC MEMORY 有权
    三维磁记忆

    公开(公告)号：US20080205116A1

    公开(公告)日：2008-08-28

    申请号：US12116111

    申请日：2008-05-06

    申请人： Robert E. Fontana ,  Andreas Moser ,  Hal J. Rosen ,  Bruce D. Terris ,  Ching Hwa Tsang

    发明人： Robert E. Fontana ,  Andreas Moser ,  Hal J. Rosen ,  Bruce D. Terris ,  Ching Hwa Tsang

    IPC分类号： G11C11/15 ,  H01L21/00

    CPC分类号： G11C11/14 ,  G11C5/02 ,  G11C19/0808

    摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.

    摘要翻译： 公开了磁存储器和方法。 如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。 位可以以磁畴的形式写入数据存储层。 然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。 通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

    EMR SENSOR AND TRANSISTOR FORMED ON THE SAME SUBSTRATE
    7.
    发明申请
    EMR SENSOR AND TRANSISTOR FORMED ON THE SAME SUBSTRATE 有权
    EMR传感器和晶体管在相同的基板上形成

    公开(公告)号：US20080088982A1

    公开(公告)日：2008-04-17

    申请号：US11549879

    申请日：2006-10-16

    申请人： Liesl Folks ,  Robert E. Fontana ,  Bruce A. Gurney ,  Klaas B. Klaassen ,  Stefan Maat

    发明人： Liesl Folks ,  Robert E. Fontana ,  Bruce A. Gurney ,  Klaas B. Klaassen ,  Stefan Maat

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3993

    摘要： Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.

    摘要翻译： 公开了磁感测芯片和制造磁感测芯片的方法。 如本文所述的磁传感芯片包括形成在来自多个半导体层的衬底上的EMR传感器。 一个或多个半导体层形成包含二维电子气（2DEG）或空穴气体（2DHG）的量子阱。 磁感测芯片还包括从多个半导体层形成在衬底上的一个或多个晶体管。 晶体管同样包括包含2DEG或2DHG的量子阱。 EMR传感器和晶体管通过一个或多个连接连接，使得晶体管放大来自EMR传感器的数据信号。

    Planar magnetic head and fabrication method therefor
    8.
    发明授权
    Planar magnetic head and fabrication method therefor 失效
    平面磁头及其制造方法

    公开(公告)号：US06949200B2

    公开(公告)日：2005-09-27

    申请号：US10610971

    申请日：2003-06-30

    申请人： Robert E. Fontana ,  Richard Hsiao ,  Yuexing Zhao

    发明人： Robert E. Fontana ,  Richard Hsiao ,  Yuexing Zhao

    IPC分类号： G11B5/31 ,  G11B5/33 ,  G11B5/17

    CPC分类号： G11B5/3116 ,  G11B5/3103 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/332 ,  Y10T29/49032

    摘要： The magnetic head of the present invention, includes a second magnetic pole (P2 pole) that is fabricated upon a write gap layer that is deposited upon a flat surface. To achieve the flat surface, a P1 pole pedestal is formed upon the P1 pole layer with a sufficient thickness that the induction coil structure can be fabricated beneath the write gap layer. In the preferred embodiment, an etch stop layer is formed upon the P1 pole layer and an ion etching process is utilized to form the induction coil trenches in an etchable material that is deposited upon the etch stop layer. Following the fabrication of the induction coil structure a CMP process is conducted to obtain a polished flat surface upon which to deposit the write gap layer, and the P2 pole is then fabricated upon the flat write gap layer.The magnetic head of the present invention can be reliably fabricated with a more narrow P2 pole tip base width, such that data tracks written by the magnetic head are likewise narrower. A hard disk drive including the magnetic head of the present invention therefore possesses narrower written data tracks, such that the areal data storage density of the hard disk drive is increased.

    摘要翻译： 本发明的磁头包括在沉积在平坦表面上的写间隙层上制造的第二磁极（P 2极）。 为了实现平坦表面，P 1极基座形成在P 1极层上，具有足够的厚度，使感应线圈结构可以在写间隙层下方制造。 在优选实施例中，在P 1极层上形成蚀刻停止层，并且使用离子蚀刻工艺在沉积在蚀刻停止层上的可蚀刻材料中形成感应线圈沟槽。 在制造感应线圈结构之后，进行CMP工艺以获得抛光的平坦表面，在其上沉积写间隙层，然后在平面写间隙层上制造P 2极。 本发明的磁头可以可靠地制造成具有更窄的P 2极尖基座宽度，使得由磁头写入的数据轨道同样较窄。 因此，包括本发明的磁头的硬盘驱动器具有较窄的写入数据磁道，使得硬盘驱动器的面积数据存储密度增加。

    MR sensor having end regions with planar sides
    9.
    发明授权
    MR sensor having end regions with planar sides 失效
    MR传感器具有平面侧面的端部区域

    公开(公告)号：US5935453A

    公开(公告)日：1999-08-10

    申请号：US893027

    申请日：1997-07-15

    申请人： Robert E. Fontana ,  Tsann Lin ,  Neil Leslie Robertson ,  Ching Hwa Tsang

    发明人： Robert E. Fontana ,  Tsann Lin ,  Neil Leslie Robertson ,  Ching Hwa Tsang

    IPC分类号： G01R33/04 ,  G11B5/31 ,  G11B5/39 ,  B44C1/22

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/045 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  G11B5/3163 ,  G11B5/398

    摘要： A magnetoresistive (MR) sensor having passive end regions separated by a central active region in which an MR sensing element is formed over substantially only the central active region. The MR sensor is defined by forming a resist pattern over both the end regions and the MR sensing element followed by an etching step where the duration of the etching is controlled by the time it takes to remove the exposed end regions' material and not by the time it takes to remove the excess MR material in the center active region. This creates an MR sensor having planar sides along the circumference of the end regions where the planar sides have no thinned edges or shoulders. The MR sensor further has no remnant MR material along the inner planar side of the end regions behind the MR sensor's trackwidth edge and adjacent to the MR sensor's back side.

    摘要翻译： 磁阻（MR）传感器具有被中心有源区分开的被动端区域，其中MR检测元件基本上仅在中心有源区域上形成。 MR传感器通过在两个端部区域和MR感测元件上形成抗蚀剂图案来定义，随后是蚀刻步骤，其中蚀刻的持续时间由去除暴露的端部区域的材料而不是由 去除中心有效区域中多余的MR材料所需的时间。 这创建了一个MR传感器，其沿着端部区域的圆周具有平面侧面，其中平面侧面没有变薄的边缘或肩部。 MR传感器在MR传感器的跟踪宽度边缘之后的MRT传感器的背面附近，沿着端部区域的内平面侧还没有剩余的MR材料。