-
公开(公告)号：US20120222618A1
公开(公告)日：2012-09-06
申请号：US13193453
申请日：2011-07-28
IPC分类号： C23C16/50 , C23C16/505 , C23C16/511
CPC分类号： C23C16/517 , H01J37/32082 , H01J37/32357
摘要： Methods and apparatus for processing semiconductor substrates are described. A processing chamber includes a substrate support with an in-situ plasma source, which may be an inductive, capacitive, microwave, or millimeter wave source, facing the substrate support and a radiant heat source, which may be a bank of thermal lamps, spaced apart from the substrate support. The support may be between the in-situ plasma source and the radiant heat source, and may rotate. A method or processing a substrate includes forming an oxide layer by exposing the substrate to a plasma generated in a process chamber, performing a plasma nitridation process on the substrate in the chamber, thermally treating the substrate using a radiant heat source disposed in the chamber while exposing the substrate to oxygen radicals formed outside the chamber, and forming an electrode by exposing the substrate to a plasma generated in the chamber.
摘要翻译： 描述了用于处理半导体衬底的方法和设备。 处理室包括具有原位等离子体源的衬底支撑件，其可以是面向衬底支撑件的电感，电容，微波或毫米波源，辐射热源可以是一排热灯，间隔开 除了基板支撑。 支撑件可以在原位等离子体源和辐射热源之间，并且可以旋转。 一种方法或处理衬底包括通过将衬底暴露于在处理室中产生的等离子体来形成氧化物层，在腔室中的衬底上进行等离子体氮化处理，使用设置在腔室中的辐射热源热处理衬底，同时 将衬底暴露于室外形成的氧自由基，并通过将衬底暴露于腔室中产生的等离子体而形成电极。
-
公开(公告)号：US08137463B2
公开(公告)日：2012-03-20
申请号：US11960166
申请日：2007-12-19
申请人： Wei Liu , Johanes S. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
发明人： Wei Liu , Johanes S. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01J37/3244 , H01J37/32449
摘要： The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.
摘要翻译： 本发明总体上提供了用于处理衬底的装置和方法。 特别地，本发明提供了获得处理气体的期望分布的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中， 第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口 ，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。
-
公开(公告)号：US20090159424A1
公开(公告)日：2009-06-25
申请号：US11960166
申请日：2007-12-19
申请人： Wei Liu , Johanes S. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
发明人： Wei Liu , Johanes S. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
CPC分类号： H01J37/3244 , H01J37/32449
摘要： The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.
摘要翻译： 本发明总体上提供了用于处理衬底的装置和方法。 特别地，本发明提供了获得处理气体的期望分布的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中， 第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口 ，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。
-
公开(公告)号：US20120164845A1
公开(公告)日：2012-06-28
申请号：US13415753
申请日：2012-03-08
申请人： Wei Liu , Johanes S. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
发明人： Wei Liu , Johanes S. Swenberg , Hanh D. Nguyen , Son T. Nguyen , Roger Curtis , Philip A. Bottini
IPC分类号： H01L21/318 , H01L21/263
CPC分类号： H01J37/3244 , H01J37/32449
摘要： The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.
摘要翻译： 本发明总体上提供了用于处理衬底的装置和方法。 特别地，本发明提供了获得处理气体的期望分布的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中， 第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口 ，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。
-
公开(公告)号：US08748259B2
公开(公告)日：2014-06-10
申请号：US13033330
申请日：2011-02-23
申请人： Udayan Ganguly , Theresa Kramer Guarini , Matthew Scott Rogers , Yoshitaka Yokota , Johanes S. Swenberg , Malcolm J. Bevan
发明人： Udayan Ganguly , Theresa Kramer Guarini , Matthew Scott Rogers , Yoshitaka Yokota , Johanes S. Swenberg , Malcolm J. Bevan
IPC分类号： H01L21/00
CPC分类号： H01L21/02247 , H01L21/02362 , H01L21/28202 , H01L21/28273 , H01L27/11521 , H01L29/42324 , H01L29/7881
摘要： Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.
摘要翻译： 提供了半导体衬底选择性一步氮化的方法和装置。 通过使用选择性氮化工艺，在具有硅区域和氧化硅区域的半导体衬底的硅区域中选择性地掺入氮气。 可以通过形成含氮等离子体并且从等离子体中过滤或除去离子而将含氮自由基引导向衬底，或者可以使用选择性前体进行热氮化处理。 远程等离子体发生器可以耦合到处理室，任选地包括一个或多个离子过滤器，淋浴喷头和自由基分配器，或者可以产生原位等离子体，并且一个或多个离子过滤器或屏蔽件设置在等离子体生成 区域和基板支撑。
-
6.发明申请公开(公告)号：US20130137249A1
公开(公告)日：2013-05-30
申请号：US13676703
申请日：2012-11-14
IPC分类号： H01L21/263
CPC分类号： H01L21/263 , H01J37/32357 , H01L21/2236
摘要： The present invention generally relates to methods of forming substrates using remote radical hydride doping. The methods generally include remotely activating a gas and introducing activated radicals of the gas into a chamber. The activated radicals may be activated hydride radicals of a gas such as diborane (B2H6), phosphine (PH3), or arsine (AsH3) which are utilized to incorporate an element such as boron, phosphorus, or arsenic into a substrate having a surface temperature between about 400 degrees Celsius and about 1000 degrees Celsius. Alternatively, the activated radicals may be activated radicals of an inert gas. The activated radicals of the inert gas are introduced into a chamber having a dopant-containing gas, such as diborane, phosphine, or arsine, therein. The activated radicals of the inert gas activate the dopant-gas and incorporate dopants into a heated substrate located within the chamber.
摘要翻译： 本发明一般涉及使用远程自由基氢化物掺杂形成衬底的方法。 所述方法通常包括远程激活气体并将气体的活化自由基引入室中。 活化的基团可以是诸如乙硼烷（B 2 H 6），膦（PH 3）或胂（AsH 3）的气体的活化氢化物基团，其用于将诸如硼，磷或砷的元素掺入具有表面温度 介于约400摄氏度和约1000摄氏度之间。 或者，活化的自由基可以是惰性气体的活化基团。 将惰性气体的活化基团引入到其中具有含掺杂剂气体的室中，例如乙硼烷，膦或胂。 惰性气体的活化自由基激活掺杂剂气体，并将掺杂剂掺入到位于室内的加热衬底中。
-
公开(公告)号：US20110217834A1
公开(公告)日：2011-09-08
申请号：US13033330
申请日：2011-02-23
申请人： Udayan Ganguly , Theresa Kramer Guarini , Matthew Scott Rogers , Yoshitaka Yokota , Johanes S. Swenberg , Malcolm J. Bevan
发明人： Udayan Ganguly , Theresa Kramer Guarini , Matthew Scott Rogers , Yoshitaka Yokota , Johanes S. Swenberg , Malcolm J. Bevan
CPC分类号： H01L21/02247 , H01L21/02362 , H01L21/28202 , H01L21/28273 , H01L27/11521 , H01L29/42324 , H01L29/7881
摘要： Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.
摘要翻译： 提供了半导体衬底选择性一步氮化的方法和装置。 通过使用选择性氮化工艺，在具有硅区域和氧化硅区域的半导体衬底的硅区域中选择性地掺入氮气。 可以通过形成含氮等离子体并且从等离子体中过滤或除去离子而将含氮自由基引导向衬底，或者可以使用选择性前体进行热氮化处理。 远程等离子体发生器可以耦合到处理室，任选地包括一个或多个离子过滤器，淋浴喷头和自由基分配器，或者可以产生原位等离子体，并且一个或多个离子过滤器或屏蔽件设置在等离子体生成 区域和基板支撑。
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.028 秒)
