公开(公告)号：US11008215B2

公开(公告)日：2021-05-18

申请号：US16695839

申请日：2019-11-26

Applicant: Chuan-Wei Wang

Inventor： Chuan-Wei Wang

IPC: B81C1/00

Abstract: A complementary metal-oxide-semiconductor (CMOS) micro electro-mechanical system (MEMS) microphone and a method for fabricating the same are disclosed. Firstly, a CMOS device including a semiconductor substrate, a first oxide insulation layer, a doped polysilicon layer, a second oxide insulation layer, a patterned polysilicon layer, and a metal wiring layer from bottom to top. The metal wiring layer is formed on the second oxide insulation layer. The patterned polysilicon layer includes undoped polysilicon. Then, a part of the metal wiring layer is removed to form a metal electrode and the semiconductor substrate is penetrated to have a chamber and expose the first oxide insulation layer, thereby forming a MEMS microphone.

公开(公告)号：US09150403B2

公开(公告)日：2015-10-06

申请号：US13959279

申请日：2013-08-05

Applicant: Chuan-Wei Wang ,  Chih-Ming Sun

Inventor： Chuan-Wei Wang ,  Chih-Ming Sun

IPC: H04R1/04 ,  B81B7/00 ,  H04R19/04 ,  H04R19/00

CPC classification number: B81B7/0051 ,  H04R19/005 ,  H04R19/04

Abstract: The present invention discloses a MEMS microphone device and its manufacturing method. The MEMS microphone device includes: a substrate including a first cavity; a MEMS device region above the substrate, wherein the MEMS device region includes a metal layer, a via layer, an insulating material region and a second cavity; a mask layer above the MEMS device region; a first lid having at least one opening communicating with the second cavity, the first lid being fixed above the mask layer; and a second lid fixed under the substrate.

Abstract translation: 本发明公开了一种MEMS麦克风装置及其制造方法。 MEMS麦克风装置包括：基板，包括第一腔; 在所述衬底上方的MEMS器件区域，其中所述MEMS器件区域包括金属层，通孔层，绝缘材料区域和第二腔体; 在MEMS器件区域上方的掩模层; 第一盖，其具有与所述第二腔连通的至少一个开口，所述第一盖固定在所述掩模层的上方; 以及固定在基板下方的第二盖。

公开(公告)号：US08836761B2

公开(公告)日：2014-09-16

申请号：US12889825

申请日：2010-09-24

Applicant: Chuan-Wei Wang ,  Hsin-Chia Chen ,  Chih-Hung Lu

Inventor： Chuan-Wei Wang ,  Hsin-Chia Chen ,  Chih-Hung Lu

IPC: H04N13/00 ,  H04N13/02 ,  G01C3/08

CPC classification number: H04N13/254 ,  G01S7/4814 ,  G01S7/4817 ,  G01S17/48 ,  G01S17/89 ,  H04N13/271

Abstract: The present invention discloses a 3D information generator for use in an interactive interface. The 3D information generator includes: a MEMS light beam generator having at least one light source for providing a dot light beam and a MEMS mirror for projecting a movable scanning light beam according to the dot light beam to an object; an image sensor for sensing an image of the object to generate a 2D image information; and a processor for generating a distance information by triangulation method according to a reflection result of the scanning light beam scanning on the object, wherein the distance information is combined with the 2D image information to generate a 3D information.

Abstract translation: 本发明公开了一种用于交互式界面的3D信息发生器。 3D信息发生器包括：具有至少一个用于提供点光束的光源的MEMS光束发生器和用于将根据点光束将可移动扫描光束投射到物体的MEMS反射镜; 用于感测对象的图像以生成2D图像信息的图像传感器; 以及处理器，用于根据对物体上的扫描光束扫描的反射结果，通过三角测量方法产生距离信息，其中距离信息与2D图像信息组合以产生3D信息。

公开(公告)号：US08513041B2

公开(公告)日：2013-08-20

申请号：US12627480

申请日：2009-11-30

Applicant: Chuan-Wei Wang ,  Sheng-Ta Lee ,  Hsin-Hui Hsu ,  Wei-Chung Wang

Inventor： Chuan-Wei Wang ,  Sheng-Ta Lee ,  Hsin-Hui Hsu ,  Wei-Chung Wang

IPC: H01L21/00

CPC classification number: H01L23/481 ,  B81B2207/07 ,  B81C1/00246 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention discloses a MEMS (Micro-Electro-Mechanical System) chip and a method for making the MEMS chip. The MEMS chip comprises: a first substrate having a first surface and a second surface opposing each other; a microelectronic device area on the first surface; a first MEMS device area on the second surface; and a conductive interconnection structure electrically connecting the microelectronic device area and the first MEMS device area.

Abstract translation: 本发明公开了一种MEMS（微电子机械系统）芯片及其制造方法。 MEMS芯片包括：具有第一表面和彼此相对的第二表面的第一基板; 第一表面上的微电子器件区域; 第二表面上的第一MEMS器件区域; 以及电连接微电子器件区域和第一MEMS器件区域的导电互连结构。

公开(公告)号：US20130126990A1

公开(公告)日：2013-05-23

申请号：US13679322

申请日：2012-11-16

Applicant: Chuan-Wei Wang

Inventor： Chuan-Wei Wang

IPC: H01L21/768 ,  H01L29/84

CPC classification number: H01L21/76898 ,  B81B2201/0257 ,  B81C1/00182 ,  H01L29/84 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

Abstract: A sensor manufacturing method and a microphone structure produced by using the same. Wherein, thermal oxidation method is used to form a sacrifice layer of an insulation layer on a silicon-on-insulator (SOI) substrate or a silicon substrate, to fill patterned via in said substrate. Next, form a conduction wiring layer on the insulation layer. Since the conduction wiring layer is provided with holes, thus etching gas can be led in through said hole, to remove filling in the patterned via, to obtain an MEMS sensor. Or after etching of the conduction wiring layer, deep reactive-ion etching is used to etch the silicon substrate into patterned via, to connect the substrate electrically to a circuit chip. The manufacturing process is simple and the technology is stable and mature, thus the conduction wiring layer and the insulation layer are used to realize electrical isolation.

Abstract translation: 一种传感器制造方法和使用该麦克风结构的麦克风结构。 其中，使用热氧化法在绝缘体上硅（SOI）衬底或硅衬底上形成绝缘层的牺牲层，以在所述衬底中填充图案化的通孔。 接下来，在绝缘层上形成导电布线层。 由于导电布线层设置有孔，因此可以通过所述孔引入蚀刻气体，以去除图案化通孔中的填充，从而获得MEMS传感器。 或者在蚀刻导电布线层之后，使用深反应离子蚀刻将硅衬底蚀刻成图案化的通孔，以将衬底电连接到电路芯片。 制造工艺简单，技术稳定，成熟，导电布线层和绝缘层用于实现电气隔离。

公开(公告)号：US08424383B2

公开(公告)日：2013-04-23

申请号：US12652108

申请日：2010-01-05

Applicant: Chuan-Wei Wang ,  Sheng-Ta Lee

Inventor： Chuan-Wei Wang ,  Sheng-Ta Lee

IPC: G01P15/125

CPC classification number: G01P15/125 ,  G01P15/18 ,  G01P2015/082

Abstract: A 3-dimensional MEMS sensor, comprising: a first axis fixed electrode; a second axis fixed electrode; a third axis fixed electrode; a movable electrode frame including a first axis movable electrode, a second axis movable electrode, a third axis movable electrode, and a connection part connecting the movable electrodes, wherein the first axis movable electrode and the first axis fixed electrode form a first capacitor along the first axis, the second axis movable electrode and the second axis fixed electrode form a second capacitor along the second axis, and the third axis movable electrode and the third axis fixed electrode form a third capacitor along the third axis, the connection part including a center mass, wherein the center mass is at least connected with one of the first, second and third axis movable electrodes, and has an outer periphery and a first interconnecting segment connecting at least two adjacent sides of the outer periphery; at least one spring connecting with the movable electrode frame; and at least one anchor connecting with the spring, wherein the first, second and third axes are not parallel to one another such that they define a 3-dimensional coordinate system.

Abstract translation: 3维MEMS传感器，包括：第一轴固定电极; 第二轴固定电极; 第三轴固定电极; 可动电极框架，包括第一轴可动电极，第二轴可动电极，第三轴可动电极和连接可动电极的连接部，其中，所述第一轴可动电极和所述第一轴固定电极沿着所述可动电极形成第一电容器 第一轴，第二轴可动电极和第二轴固定电极沿着第二轴形成第二电容器，第三轴可动电极和第三轴固定电极沿着第三轴形成第三电容器，连接部分包括中心 其中所述中心质量体至少与所述第一，第二和第三轴可动电极中的一个连接，并且具有外周和连接所述外周的至少两个相邻侧的第一互连段; 与可动电极框架连接的至少一个弹簧; 以及与弹簧连接的至少一个锚固件，其中所述第一，第二和第三轴线彼此不平行，使得它们限定三维坐标系。

公开(公告)号：US08178935B2

公开(公告)日：2012-05-15

申请号：US13151361

申请日：2011-06-02

Applicant: Chuan-Wei Wang

Inventor： Chuan-Wei Wang

IPC: H01L29/84 ,  H01L23/06

CPC classification number: B81C1/00333 ,  B81C2203/0714

Abstract: The present invention proposes a MEMS chip and a package method thereof. The package method comprises: making a capping wafer by: providing a first substrate and forming an etch stop layer on the first substrate; making a device wafer by: providing a second substrate and forming a MEMS device and a material layer surrounding the MEMS device on the second substrate; bonding the capping wafer and the device wafer; after bonding, etching the first substrate to form at least one via; etching the etch stop layer through the via; etch the material layer; and forming a sealing layer on the first substrate.

Abstract translation: 本发明提出一种MEMS芯片及其封装方法。 封装方法包括：通过以下步骤制造封盖晶片：提供第一衬底并在第一衬底上形成蚀刻停止层; 通过以下方式制造器件晶片：提供第二衬底并在第二衬底上形成MEMS器件和围绕MEMS器件的材料层; 接合封盖晶片和器件晶片; 在接合之后，蚀刻第一基板以形成至少一个通孔; 通过所述通孔蚀刻所述蚀刻停止层; 蚀刻材料层; 以及在所述第一基板上形成密封层。

公开(公告)号：US20110236805A1

公开(公告)日：2011-09-29

申请号：US12802209

申请日：2010-06-02

Applicant: Hsin-Hui Hsu ,  Chuan-Wei Wang ,  Sheng-Ta Lee ,  Chih-Hung Lu

Inventor： Hsin-Hui Hsu ,  Chuan-Wei Wang ,  Sheng-Ta Lee ,  Chih-Hung Lu

IPC: G03F1/00 ,  G03F7/20

CPC classification number: G03F1/36 ,  B81B2207/07 ,  B81C1/00404 ,  G02B26/0833

Abstract: The present invention discloses a MEMS lithography mask with improved tungsten deposition topography and a method for making the same. The MEMS lithography mask includes: a pattern including at least two sections forming a conjunction with each other, each of the at least two sections having a width not less than a minimum width, the conjunction having a center and a plurality of corners, wherein at least one of the corners is inwardly recessed to reduce a width of the conjunction, the sections being for defining trenches on a substrate to be filled with tungsten as apart of a MEMS device, whereby the lowest height of the tungsten surface is not lower than 80% of the trench height.

Abstract translation: 本发明公开了一种具有改善的钨沉积形貌的MEMS光刻掩模及其制造方法。 MEMS光刻掩模包括：包括形成彼此连接的至少两个部分的图案，所述至少两个部分中的每一个具有不小于最小宽度的宽度，所述连接具有中心和多个拐角，其中在 至少一个拐角向内凹进以减小连接的宽度，这些部分用于限定衬底上的沟槽，以将钨填充为MEMS器件的分开，由此钨表面的最低高度不低于80 沟槽高度的百分比。

公开(公告)号：US09618610B2

公开(公告)日：2017-04-11

申请号：US13044563

申请日：2011-03-10

Applicant: Ming-Tsan Kao ,  En-Feng Hsu ,  Chuan-Wei Wang

Inventor： Ming-Tsan Kao ,  En-Feng Hsu ,  Chuan-Wei Wang

IPC: G01S17/89 ,  G01S7/491

CPC classification number: G01S7/4918 ,  G01S17/89

Abstract: A light source is used for emitting an invisible light toward an object. The object reflects the invisible light and reflected light is formed, and a sensor is used for receiving the reflected light. A processor is coupled to the sensor for recording a time interval of the invisible light traveling from the light source to the object and reflected from the object to the sensor. Then, the processor estimates a measurement distance of the object according to the time interval, and adjusts an emission period of the light source, an exposure period of the sensor, intensity of the invisible light, and/or main sensing range of the sensor according to the measurement distance.

公开(公告)号：US09258652B2

公开(公告)日：2016-02-09

申请号：US14245558

申请日：2014-04-04

Applicant: Chuan-Wei Wang

Inventor： Chuan-Wei Wang

IPC: H04R19/00 ,  H04R19/04 ,  H04R31/00

CPC classification number: H04R19/005 ,  H04R19/04 ,  H04R31/00

Abstract: A microphone structure is disclosed. The microphone structure comprises a substrate penetrated with at least one opening chamber and having an insulation surface. A conduction layer is arranged on the insulation surface and arranged over the opening chamber. An insulation layer is arranged on the conduction layer and having a opening to expose a part of the conduction layer as a vibration block arranged over the opening chamber. At least two first patterned electrodes are arranged on the insulation layer and arranged over the vibration block. At least two second patterned electrodes are arranged over the opening chamber, arranged on the vibration block and separated from the first patterned electrodes by at least two first gaps. When the vibration block vibrates, the vibration block moves the second patterned electrodes whereby the second patterned electrodes and the first patterned electrodes perform differential sensing.

Abstract translation: 公开了麦克风结构。 麦克风结构包括穿透至少一个开口腔并具有绝缘表面的基底。 导电层布置在绝缘表面上并且布置在开口室之上。 绝缘层布置在导电层上，并具有用于将导电层的一部分暴露为布置在开口室上方的振动块的开口。 至少两个第一图案化电极布置在绝缘层上并且布置在振动块上。 至少两个第二图案化电极布置在开口室上方，布置在振动块上，并与第一图案化电极分开至少两个第一间隙。 当振动块振动时，振动块移动第二图案化电极，由此第二图案化电极和第一图案化电极执行差分感测。