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    Piezoelectric bio-chip for detecting pathogen of mad cow disease and thereon preparation
    1.
    发明申请
    Piezoelectric bio-chip for detecting pathogen of mad cow disease and thereon preparation 审中-公开
    用于检测疯牛病病原体的压电生物芯片及其制备方法

    公开(公告)号：US20060121531A1

    公开(公告)日：2006-06-08

    申请号：US10523174

    申请日：2003-05-22

    申请人： Chuanzhong Wei ,  ZHIHONG Mo ,  Guiping Ma ,  Ping Jin ,  Bingling Li ,  Xuelong Tian ,  HAIYAN Tian ,  Gang Guo

    发明人： Chuanzhong Wei ,  ZHIHONG Mo ,  Guiping Ma ,  Ping Jin ,  Bingling Li ,  Xuelong Tian ,  HAIYAN Tian ,  Gang Guo

    IPC分类号： G01N33/53 ,  C12M1/34 ,  H01L21/00

    CPC分类号： G01N33/6896 ,  G01N2800/2828

    摘要： The present invention relates to the device for animal inspection and quarantine and the preparation method thereof. The present invention is especially applicable to the detection of the pathogen of bovine spongiform encephalopathy (BSE) (also known as “mad cow disease”). The present invention employs a piezoelectric chip, a microelectrode array and a common electrode fixed on the lower side surface and upper side surface of the piezoelectric chip, respectively, and a BSE PrP antibody array to constitute the piezoelectric biochip for the detection of the BSE pathogen. The BSE PrP antibodies are immobilized on the electrodes of the microelectrode array in a format corresponding uniquely to the electrodes of the microelectrode array by adsorbing, bonding, cross-linking, embedding or self-assembly process. The combination of the piezoelectric biochip and a detector constitutes the piezoelectric biochip detection system for the BSE pathogen. When the antibodies react with the corresponding PrPs immunochemically, the information about the PrPs can be detected at real time by measuring the resonant frequency, and the PrPs thus can be analyzed qualitatively and quantitatively. The present invention is applicable to the early, effective and rapid detection of the BSE pathogen.

    摘要翻译： 本发明涉及动物检疫检疫装置及其制备方法。 本发明特别适用于牛海绵状脑病（BSE）病原体的检测（又称“疯牛病”）。 本发明分别采用固定在压电芯片的下侧表面和上侧表面上的压电芯片，微电极阵列和公共电极以及BSE PrP抗体阵列，以构成用于检测BSE病原体的压电生物芯片 。 通过吸附，结合，交联，嵌入或自组装过程，BSE PrP抗体以与微电极阵列的电极唯一相对应的格式固定在微电极阵列的电极上。 压电生物芯片和检测器的组合构成了BSE病原体的压电生物芯片检测系统。 当抗体与相应的PrPs免疫化学反应时，可以通过测量共振频率实时检测关于PrPs的信息，因此可以定性和定量地分析PrPs。 本发明适用于早期有效快速检测BSE病原体。

    Manufacturing method of samarium sulfide thin films
    3.
    发明授权
    Manufacturing method of samarium sulfide thin films 失效
    硫化钐薄膜的制造方法

    公开(公告)号：US6132568A

    公开(公告)日：2000-10-17

    申请号：US256222

    申请日：1999-02-24

    申请人： Ping Jin ,  Sakae Tanemura

    发明人： Ping Jin ,  Sakae Tanemura

    IPC分类号： C01F17/00 ,  C23C14/06 ,  C23C14/34

    CPC分类号： C23C14/0623 ,  C23C14/3464

    摘要： The present invention provides a method for producing a samarium monosulfide piezochromic thin film, and the present invention relates to a process for producing a thin film material at a high film formation rate by forming a samarium monosulfide thin film on a substrate by a reactive sputtering deposition process, which is a process for producing a samarium monosulfide (SmS) thin film, characterized by co-sputtering a disamarium trisulfide (Sm.sub.2 S.sub.3) compound target and a samarium (Sm) metal target simultaneously in an inert gas discharge.

    摘要翻译： 本发明提供一种单硫化钐压致变色薄膜的制造方法，本发明涉及通过反应溅射沉积法在基板上形成钐单硫化物薄膜而以高成膜速度制造薄膜材料的方法 工艺，其是用于制备单硫化钐（SmS）薄膜的方法，其特征在于在惰性气体放电中同时溅射三硫化三（Sm 2 S 3）化合物靶和钐（Sm）金属靶。

    METHOD FOR IMPLEMENTING PHOTOELECTRIC MUTEX, ETHERNET PHOTOELECTRIC MUTEX INTERFACE DEVICE AND NETWORK EQUIPMENT
    6.
    发明申请
    METHOD FOR IMPLEMENTING PHOTOELECTRIC MUTEX, ETHERNET PHOTOELECTRIC MUTEX INTERFACE DEVICE AND NETWORK EQUIPMENT 审中-公开
    用于实施光电MUTEX，以太网光电MUTEX接口设备和网络设备的方法

    公开(公告)号：US20090323705A1

    公开(公告)日：2009-12-31

    申请号：US12491422

    申请日：2009-06-25

    申请人： Ping Jin ,  Libao Chu ,  Xuefeng Zhang ,  Liqiang Zhang ,  Weiping Tian ,  Wei Wei ,  Guangtao He

    发明人： Ping Jin ,  Libao Chu ,  Xuefeng Zhang ,  Liqiang Zhang ,  Weiping Tian ,  Wei Wei ,  Guangtao He

    IPC分类号： H04L12/66 ,  H04L12/56

    CPC分类号： H04L12/40136 ,  H04L12/40032

    摘要： A method for implementing photoelectric mutex, an Ethernet photoelectric mutex interface device, and network equipment are provided. The Ethernet photoelectric mutex interface device includes a channel switching module, a first Ethernet physical layer (PHY) chip, and a second Ethernet PHY chip. The channel switching module is connected to the first Ethernet PHY chip through a first interface and connected to the second Ethernet PHY chip through a second interface respectively, and is adapted to perform data transmission through the first Ethernet PHY chip and when a presence signal of an optical interface data transmission module is detected, perform data transmission through the second Ethernet PHY chip. Thus, a cost of equipment for implementing a photoelectric mutex function in an Ethernet is reduced, and a utilization rate of transmission resources is improved.

    摘要翻译： 提供了实现光电互联的方法，以太网光互互接口设备和网络设备。 以太网光互连接口设备包括信道切换模块，第一以太网物理层（PHY）芯片和第二以太网PHY芯片。 信道切换模块通过第一接口连接到第一以太网PHY芯片，并通过第二接口连接到第二以太网PHY芯片，并且适于通过第一以太网PHY芯片执行数据传输，并且当存在信号 检测光接口数据传输模块，通过第二以太网PHY芯片执行数据传输。 因此，降低了在以太网中实现光电互联功能的设备的成本，提高了传输资源的利用率。